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Vishay Siliconix SQJA76EP-T1_BE3
- Part No.:
- SQJA76EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA76EP-T1_BE3.pdf
- Description:
- N-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,992
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Product details
Overview
SQJA76EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V VDS, 2.4 mΩ RDS(on) at 10 V VGS, and 75 A continuous drain current at TC = 25 °C, housed in a PowerPAK® SO-8L package and qualified to AEC-Q101 for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQJA76EP-T1_BE3 datasheet, SQJA76EP-T1_BE3 pinout, SQJA76EP-T1_BE3 application, or SQJA76EP-T1_BE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.2 °C/W), gate charge (Qg = 66–100 nC), body diode recovery (Qrr = 123–250 nC), and junction temperature rating up to +175 °C - all critical for high-reliability automotive power stage design.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous rectification and high-side/low-side switching topologies. Its 100 % Rg and UIS tested construction ensures robustness against voltage transients and gate drive mismatch in 12 V/48 V automotive systems.
The device features a co-packaged body diode with trr = 65–130 ns and Qrr = 123–250 nC, enabling efficient freewheeling in buck converters and motor phase-legs. Its RDS(on) remains stable across -55 °C to +175 °C, supporting operation in engine bay environments without derating penalties.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 12 V/48 V automotive battery rails and transient clamping to ISO 7637-2 Pulse 5a. |
| RDS(on) @ 10 V | 2.4 mΩ - Enables <1.5 W conduction loss at 75 A, reducing heatsink requirements in compact power modules. |
| ID (continuous) | 75 A @ TC = 25 °C - Supports high-current motor drivers and starter-generator inverters without parallel devices. |
| Qg | 66–100 nC - Determines gate driver power demand; enables 100 kHz+ switching in isolated DC-DC converters with standard 2 A peak drivers. |
| RthJC | 2.2 °C/W - Allows direct thermal coupling to heatsinks or copper planes, enabling >50 W dissipation with minimal ΔT between die and case. |
| TJ max | +175 °C - Meets AEC-Q101 extended temperature requirement for under-hood placement near engines or transmissions. |
| EAS | 96.8 mJ - Specifies single-pulse avalanche energy handling capability, critical for inductive load switching reliability. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain copper on bottom side for enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection; pins 1/2/3/7/8 are internally bonded to source metallization - used for low-inductance return path and thermal sinking. |
| 4 | Gate (G) | Control terminal; requires ≤±20 V drive; low Rg (0.35–1.2 Ω) minimizes gate oscillation risk during fast edge transitions. |
| 5, 6 | Drain (D) | Main power output terminal; pins 5/6 connect directly to internal drain fingers and bottom-side thermal pad - primary heat extraction path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test conditions including HTOL, TC, UHAST, and mechanical shock - supports ASIL-B system integration without additional qualification. |
| 100 % Rg tested | Ensures gate resistance consistency (0.35–1.2 Ω), critical for matched turn-on/turn-off timing in paralleled configurations and half-bridge shoot-through prevention. |
| 100 % UIS tested | Guarantees unclamped inductive switching robustness up to IAS = 44 A and EAS = 96.8 mJ - eliminates need for external snubbers in solenoid or relay drive circuits. |
| Low Ciss/Coss ratio | Ciss = 4005–5250 pF, Coss = 1160–1550 pF - improves hard-switching efficiency and reduces Miller-induced false turn-on in high-dV/dt environments. |
| Body diode Qrr | 123–250 nC - Enables soft-recovery behavior in synchronous rectifiers, lowering EMI and reducing reverse recovery losses vs. discrete diode solutions. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-efficiency three-phase inverter driving brushless DC assist motor in steering column assembly. IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-controlled H-bridge; handles peak currents up to 120 A with forced air cooling. Use Value: 2.4 mΩ RDS(on) and 175 °C TJ rating enable compact inverter design meeting ISO 26262 ASIL-C thermal safety goals without derating. |
Use Scenario: Synchronous rectifier in bidirectional LLC resonant converter interfacing 12 V and 48 V domains. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–500 kHz with zero-voltage switching (ZVS) boundary. Use Value: Low Qg (66–100 nC) and fast tf (8–15 ns) minimize switching losses while maintaining ZVS margin across full load range. |
| Engine Start-Stop System | Automotive HVAC Blower Motor Driver |
Use Scenario: High-current H-bridge controlling 12 V starter motor during automatic engine restart after idle stop. IC Role / Device Role / Timing Role: High- and low-side switch handling 300 A pulsed current (IDM = 200 A) with <300 μs pulse width. Use Value: UIS-tested ruggedness and 96.8 mJ EAS prevent failure during cranking surge events and load dump transients. |
Use Scenario: PWM-driven half-bridge supplying variable-speed 12 V blower motor in cabin climate control unit. IC Role / Device Role / Timing Role: Low-side switch operating at 20 kHz with 100 % duty cycle capability and integrated body diode freewheeling. Use Value: VSD = 0.76–1.2 V body diode forward voltage reduces conduction loss during dead-time, improving overall efficiency by ~1.2 % at mid-load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 2.2 mΩ @ 10 V, but rated only to +175 °C with no AEC-Q101 documentation in public datasheet; Qg = 110 nC. | Higher gate charge increases driver loss; lacks documented AEC-Q101 qualification evidence for safety-critical EPS or start-stop systems. | Select when cost sensitivity outweighs formal automotive qualification requirements and thermal margin allows higher Qg-induced losses. |
| IXTP30N10P | TO-220 package, RDS(on) = 32 mΩ @ 10 V, TJ max = +175 °C, not AEC-Q101 qualified; significantly larger footprint and higher RDS(on). | Requires heatsink mounting and PCB area >3× larger; unsuitable for space-constrained modules like EPS ECUs or DC-DC bricks. | Consider only for prototyping or non-automotive industrial motor drives where qualification and size are not constraints. |
Compared with STL220N4F7AG and IXTP30N10P, SQJA76EP-T1_BE3 uniquely combines AEC-Q101 qualification, 2.4 mΩ conduction loss, and PowerPAK SO-8L thermal performance - making it the only option among the three validated for production deployment in ASIL-B/C automotive power stages.
Availability
SQJA76EP-T1_BE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and engine start-stop systems requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQJA76EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA76EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power conversion in ASIL-B/C systems such as EPS, ADAS actuators, and 48 V architectures.
FAQ
What is the maximum continuous drain current rating for SQJA76EP-T1_BE3 at 125 °C case temperature?
The SQJA76EP-T1_BE3 supports 65.6 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation, and must be applied in thermal design calculations for engine bay-mounted modules. The SQJA76EP-T1_BE3 maintains full functionality across this range without parameter shift or reliability degradation.
Is SQJA76EP-T1_BE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?
Yes, SQJA76EP-T1_BE3 is well-suited for synchronous rectification due to its low RDS(on) of 2.4 mΩ at 10 V VGS, fast switching parameters (tf = 8–15 ns, Qg = 66–100 nC), and body diode Qrr of 123–250 nC. These characteristics reduce both conduction and switching losses in high-frequency (300–500 kHz) LLC converters. The SQJA76EP-T1_BE3 also meets AEC-Q101 requirements essential for 48 V system compliance.
Does SQJA76EP-T1_BE3 have a guaranteed avalanche rating, and what does it mean for circuit design?
Yes, SQJA76EP-T1_BE3 is 100 % UIS tested with a single-pulse avalanche rating of IAS = 44 A and EAS = 96.8 mJ. This means the device can safely absorb inductive energy during unclamped switching events - such as MOSFET turn-off with inductive loads - without failure. Designers can rely on this rating to eliminate snubber networks in solenoid drivers or motor phase-legs, simplifying layout and improving reliability. The SQJA76EP-T1_BE3 datasheet confirms this is production-tested, not just design-simulated.
What is the gate-source threshold voltage range for SQJA76EP-T1_BE3, and how does it affect drive circuit compatibility?
The gate-source threshold voltage (VGS(th)) for SQJA76EP-T1_BE3 is specified as 2.5–3.5 V at TC = 25 °C, with typical value 3.0 V. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers, while maintaining noise immunity against spurious turn-on in noisy automotive environments. The SQJA76EP-T1_BE3 achieves full enhancement (RDS(on) spec met) at VGS = 10 V, making it compatible with conventional bootstrap or isolated gate driver ICs used in automotive inverters.
How does the PowerPAK SO-8L package of SQJA76EP-T1_BE3 improve thermal performance compared to standard SO-8?
The PowerPAK SO-8L package of SQJA76EP-T1_BE3 features an exposed copper drain pad on the bottom surface, delivering RthJC = 2.2 °C/W - over 3× better than standard SO-8 packages (~7–10 °C/W). This enables direct thermal coupling to PCB copper planes or heatsinks, allowing >50 W power dissipation without external heatsinks. Unlike leaded SO-8, the PowerPAK SO-8L's leadless construction eliminates bond wire inductance, improving high-frequency stability. The SQJA76EP-T1_BE3 leverages this for high-current automotive applications where thermal density is critical.
SQJA76EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA76EP-T1_BE3 FAQ
1.How can I place an order for SQJA76EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA76EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA76EP-T1_BE3 reliable?
The price and inventory of SQJA76EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA76EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA76EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA76EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA76EP-T1_BE3?
SQJA76EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA76EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA76EP-T1_BE3?
For technical support, including SQJA76EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA76EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA76EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA76EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA76EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA76EP-T1_BE3?
All SQJA76EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA76EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA76EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA76EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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