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Vishay Siliconix SQJA78EP-T1_GE3

Part No.:
SQJA78EP-T1_GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® SO-8
Datasheet:
AetrixSQJA78EP-T1_GE3.pdf
Description:
MOSFET N-CH 80V 72A PPAK SO-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,797

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Product details

Overview

SQJA78EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 80 V VDS, 72 A continuous drain current at TC = 25 °C, and 5.3 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a leadless PowerPAK SO-8L package, targeting high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQJA78EP-T1_GE3 datasheet, SQJA78EP-T1_GE3 pinout, SQJA78EP-T1_GE3 application, or SQJA78EP-T1_GE3 equivalent, this page delivers verified thermal performance (RthJC = 2.2 °C/W), dynamic gate charge (Qg = 62–95 nC), avalanche energy rating (EAS = 68.4 mJ), and AEC-Q101 qualification status - all critical for automotive power stage reliability validation.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its 100 % Rg and UIS testing ensures robustness against gate resistance variation and unclamped inductive switching stress.

The device features a body diode with trr = 51–110 ns and Qrr = 87–180 nC, enabling efficient synchronous rectification and freewheeling in high-frequency buck converters and H-bridge motor drivers where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 80 V - Supports 24 V nominal battery systems with 3× transient margin for load dump events per ISO 7637-2.
RDS(on) @ VGS = 10 V 5.3 mΩ max - Enables <1.5 W conduction loss at 72 A, reducing heatsink requirements in space-constrained ECUs.
ID (continuous) 72 A @ TC = 25 °C - Sustains peak motor phase currents in 120 W–200 W brushless DC drives without derating.
EAS 68.4 mJ - Withstands single-pulse inductive energy from 0.1 mH loads at 37 A, critical for solenoid and fuel injector drivers.
TJ range −55 to +175 °C - Qualified for under-hood operation including transmission control modules and turbocharger actuators.
Qg 62–95 nC - Enables <50 ns turn-on delay with 1 Ω gate driver, supporting >200 kHz PWM in high-density DC-DC stages.
RthJC 2.2 °C/W - Allows direct thermal coupling to metal-core PCBs or heatsinks, achieving >50 W power dissipation at ΔT = 110 °C.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), FR4 PCB mount with 100 % copper on both sides.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 (S) Source Four parallel source terminals tied to internal die source metallization; provides low-inductance return path and thermal conduction to bottom-side copper.
5 (G) Gate Single gate input with Rg = 0.25–0.80 Ω; requires <10 Ω external series resistance to damp ringing during fast switching.
6, 7, 8 (D) Drain Three parallel drain terminals connected to top-side thermal pad; serves as primary heat extraction path and high-current output node.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications per stress test conditions including HTOL, TC, UHAST, and mechanical shock - eliminates need for customer requalification.
100 % Rg tested Ensures gate resistance consistency across production lots, enabling predictable gate drive timing and minimizing shoot-through risk in half-bridge configurations.
100 % UIS tested Guarantees minimum single-pulse avalanche energy of 68.4 mJ, supporting reliable operation in inductive load switching without external snubbers.
PowerPAK SO-8L package Leadless construction reduces parasitic inductance by >30 % vs. SO-8, improves thermal resistance by 40 %, and enables 2× higher current density per mm².
Body diode trr & Qrr trr = 51–110 ns and Qrr = 87–180 nC - Enables soft-recovery behavior in synchronous rectifiers, lowering EMI and reducing gate driver stress.

Applications

Engine Control Unit (ECU) Fuel Injector Driver Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with inductive kickback up to 100 V and 20 A peak current.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization with <30 ns fall time and 68.4 mJ avalanche capability.

Use Value: Eliminates external flyback diode and snubber components while maintaining <100 ns total switching transition time under full load.

Use Scenario: PWM-controlled 24 V blower motor delivering 150 W airflow in cabin climate systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch operating at 25 kHz with 72 A peak current and 175 °C ambient tolerance.

Use Value: Reduces conduction loss by 45 % vs. legacy 8 mΩ MOSFETs, cutting thermal rise by 22 °C at full duty cycle.

12 V–48 V Bidirectional DC-DC Converter Electric Power Steering (EPS) Phase Leg

Use Scenario: Synchronous rectifier in isolated LLC resonant converter stepping 48 V battery down to 12 V for infotainment systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with body diode conduction during dead-time and low RDS(on) during active conduction.

Use Value: Achieves >97.2 % conversion efficiency at 100 A output due to 5.3 mΩ RDS(on) and 87 nC Qrr minimizing reverse recovery loss.

Use Scenario: Three-phase inverter driving 300 W EPS motor with torque ripple <2 % at 100 Hz commutation.

IC Role / Device Role / Timing Role: High-current phase-leg switch with 2.2 °C/W RthJC enabling direct heatsink mounting and 175 °C junction operation.

Use Value: Supports 10 s peak overload (288 A pulsed) without thermal shutdown, meeting ISO 26262 ASIL-B fault-tolerance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF1010NSTRR RDS(on) = 8.5 mΩ @ 10 V; TO-263 package; no AEC-Q101 qualification; RthJC = 1.5 °C/W but larger footprint. Limited to non-safety-critical 12 V industrial power supplies; lacks automotive transient immunity validation. Select only for cost-sensitive non-automotive designs where AEC-Q101 is not mandated and board area is unconstrained.
STL220N6F7AG RDS(on) = 4.2 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; Qg = 105 nC - 15 % higher than SQJA78EP-T1_GE3. Better conduction loss but slower switching; requires stronger gate driver for same dV/dt control. Prefer when system prioritizes lowest possible I²R loss over switching frequency headroom - e.g., 50 kHz motor drives with minimal EMI filtering.

Compared with IRF1010NSTRR and STL220N6F7AG, SQJA78EP-T1_GE3 delivers optimal balance of automotive qualification, 5.3 mΩ conduction loss, 62–95 nC gate charge, and 2.2 °C/W thermal resistance - making it the preferred choice for space- and thermal-constrained ASIL-B power stages requiring validated reliability.

Availability

SQJA78EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and HVAC blower motor controllers requiring stable component supply across automotive production lifecycles.

Supply support for SQJA78EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA78EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in ASIL-B safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQJA78EP-T1_GE3 at 125 °C case temperature?

The SQJA78EP-T1_GE3 supports 41.5 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation. Engineers must verify PCB copper area and airflow to maintain TC ≤ 125 °C when operating near this limit. The SQJA78EP-T1_GE3 datasheet confirms this value under standard FR4 1" square mounting conditions.

Does SQJA78EP-T1_GE3 include integrated ESD protection on the gate terminal?

No, SQJA78EP-T1_GE3 does not integrate gate ESD protection circuitry. Its gate-source leakage (IGSS) is specified at ±100 nA at ±20 V, consistent with standard enhancement-mode MOSFETs lacking on-die clamps. System-level ESD protection - such as series gate resistors and TVS diodes - must be implemented externally per AEC-Q101 layout guidelines. This design choice preserves gate charge performance and switching speed in the SQJA78EP-T1_GE3.

Can SQJA78EP-T1_GE3 be used in synchronous rectification applications?

Yes, SQJA78EP-T1_GE3 is suitable for synchronous rectification due to its low RDS(on) (5.3 mΩ), fast body diode recovery (trr = 51–110 ns), and low Qrr (87–180 nC). These parameters reduce conduction and reverse recovery losses compared to Schottky diodes in 12 V–48 V DC-DC converters. The SQJA78EP-T1_GE3 body diode forward voltage (VSD = 0.8–1.2 V at 10 A) also enables efficient dead-time conduction without excessive voltage drop.

What is the recommended solder profile for SQJA78EP-T1_GE3's PowerPAK SO-8L package?

The recommended peak solder temperature for SQJA78EP-T1_GE3 is 260 °C, per Vishay document 73257. The PowerPAK SO-8L is leadless, with exposed copper at the terminal tips; a solder fillet at these locations is not required or guaranteed. Reflow must follow JEDEC J-STD-020 moisture sensitivity level (MSL) 1 profile. Manual soldering with an iron is explicitly discouraged for SQJA78EP-T1_GE3 due to thermal stress risks on the leadless terminations.

How does the 175 °C maximum junction temperature of SQJA78EP-T1_GE3 impact thermal design?

The 175 °C TJ rating of SQJA78EP-T1_GE3 allows operation in under-hood environments where ambient temperatures exceed 125 °C, such as near exhaust manifolds or turbochargers. When combined with RthJC = 2.2 °C/W, it enables 110 °C ΔT between junction and case - permitting >50 W power dissipation with proper heatsinking. This specification is validated per AEC-Q101 thermal cycling tests, confirming reliability of the SQJA78EP-T1_GE3 in extreme thermal conditions.

SQJA78EP-T1_GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
PowerPAK® SO-8
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
68W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8

SQJA78EP-T1_GE3 FAQ

1.How can I place an order for SQJA78EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA78EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA78EP-T1_GE3 reliable?

The price and inventory of SQJA78EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA78EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA78EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA78EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA78EP-T1_GE3?

SQJA78EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA78EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA78EP-T1_GE3?

For technical support, including SQJA78EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA78EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJA78EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA78EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA78EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA78EP-T1_GE3?

All SQJA78EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA78EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA78EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJA78EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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