Vishay Siliconix SQJA84EP-T1_BE3
- Part No.:
- SQJA84EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8 Dual
- Datasheet:
-
SQJA84EP-T1_BE3.pdf
- Description:
- N-CHANNEL 80-V (D-S) 175C MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:2,995
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJA84EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 80 V drain-source voltage, 46 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It delivers RDS(on) of 0.0125 Ω at VGS = 10 V and 0.0160 Ω at VGS = 4.5 V in a PowerPAK® SO-8L package, designed for high-efficiency DC-DC conversion and motor control in under-hood automotive systems.
For engineers reviewing the SQJA84EP-T1_BE3 datasheet, SQJA84EP-T1_BE3 pinout, SQJA84EP-T1_BE3 application, or SQJA84EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, thermal performance (RthJC = 2.7 °C/W), and compatibility with 4.5 V logic-level gate drive in space-constrained power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 21–35 nC, Qgd = 3 nC) supports efficient operation in synchronous buck converters operating up to 500 kHz.
The device integrates a robust body diode with VSD = 0.82–1.2 V at IF = 10 A and is characterized for avalanche energy (EAS = 36 mJ), enabling reliable operation in inductive load switching and regenerative braking circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and high-side switch applications |
| RDS(on) @ VGS = 10 V | 0.0125 Ω - Enables ≤ 5.8 W conduction loss at 46 A, critical for thermally constrained engine control units |
| RDS(on) @ VGS = 4.5 V | 0.0160 Ω - Ensures full enhancement with standard 5 V microcontroller GPIOs without level-shifting |
| ID (continuous, TC = 25 °C) | 46 A - Supports high-current loads such as radiator fan drivers and EPS assist motors |
| TJ max | +175 °C - Qualified for under-hood placement near engines and exhaust systems per AEC-Q101 |
| RthJC | 2.7 °C/W - Allows direct thermal coupling to heatsink or copper pour for >30 W power dissipation |
| Qg | 21–35 nC - Enables low gate-drive power consumption and <35 ns total switching time (td(on) + tr + td(off) + tf) |
Pinout & Package
Package: PowerPAK® SO-8L - leadless, surface-mount, 5.13 mm × 6.15 mm footprint with exposed drain pad on bottom side for enhanced thermal conduction. Compliant with IPC-7351B SOIC-8 variant land pattern.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 (Drain pads) | Drain (D) | Multiple parallel drain terminals connected to internal die source metallization; must be soldered to large PCB copper area for thermal management |
| 5 | Gate (G) | Control input requiring <35 nC charge; layout must minimize trace inductance to suppress ringing during hard switching |
| 6 | Source (S) | Power return path and gate reference; tied to PCB ground plane with low-inductance connection to reduce shoot-through risk |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive mission-critical applications including engine management and ADAS power supplies |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-no field failures due to transient overstress |
| TrenchFET® architecture | Delivers 23 % lower RDS(on) vs. planar MOSFETs at same die size, reducing board area in dual-phase controllers |
| PowerPAK SO-8L package | Thermal resistance 3× lower than standard SO-8; enables 55 W PD at TC = 25 °C without external heatsink |
| 175 °C operation | Supports extended lifetime at elevated ambient temperatures common in EV power distribution modules |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switching MOSFET controlling injector coil current with precise 1–5 ms pulse width modulation. Use Value: RDS(on) ≤ 0.016 Ω at 4.5 V gate drive ensures <1.2 W conduction loss per injector, minimizing ECU thermal load. |
Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converter for infotainment head units. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300–500 kHz with minimal switching losses. Use Value: Qg = 21–35 nC and Ciss = 1565–2100 pF enable <15 ns rise/fall times, reducing transition losses by 38 % vs. legacy SO-8 devices. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive HVAC Blower Motor Controller |
Use Scenario: Half-bridge phase leg in 24 V EPS motor driver handling peak currents up to 40 A. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in three-phase inverter with integrated bootstrap gate drive. Use Value: 100 % UIS-tested avalanche capability (EAS = 36 mJ) prevents failure during motor stall or short-circuit events. |
Use Scenario: PWM-controlled blower motor driver in climate control systems with variable speed demand. IC Role / Device Role / Timing Role: Low-side power switch modulating motor current at 20–100 Hz with soft-start ramping. Use Value: RthJC = 2.7 °C/W allows direct mounting to aluminum chassis, eliminating discrete heatsinks and reducing BOM count by one component. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N8F7AG | RDS(on) = 0.0019 Ω @ 10 V (lower), but 5× higher Qg (110 nC); PowerFLAT 5x6 package | Better conduction efficiency but slower switching; suited for <100 kHz applications only | Select when lowest RDS(on) dominates over switching loss; verify gate driver can supply 110 nC per cycle |
| IRF3710PBF | Legacy TO-220 package; RDS(on) = 0.028 Ω @ 10 V; no AEC-Q101 qualification; RthJC = 1.5 °C/W | Larger footprint, higher thermal resistance, non-automotive grade; requires mechanical heatsink | Acceptable for non-automotive industrial prototypes; not suitable for production automotive designs |
Compared with STL220N8F7AG and IRF3710PBF, SQJA84EP-T1_BE3 offers optimal balance of low RDS(on), moderate Qg, AEC-Q101 compliance, and compact PowerPAK SO-8L thermal performance-making it the preferred choice for volume automotive power stages where reliability, size, and efficiency are jointly constrained.
Availability
SQJA84EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, DC-DC conversion, electric power steering, and HVAC blower motor applications requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQJA84EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA84EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-current switching in safety-critical vehicle subsystems.
FAQ
What is the maximum junction temperature rating for SQJA84EP-T1_BE3?
The SQJA84EP-T1_BE3 is rated for a maximum junction temperature of +175 °C, validated per AEC-Q101 stress test conditions. This rating enables operation in under-hood environments where ambient temperatures exceed 125 °C, provided thermal design maintains TJ ≤ 175 °C using the specified RthJC = 2.7 °C/W path. Derating curves in the datasheet confirm sustained 46 A current capability at TC = 125 °C.
Is SQJA84EP-T1_BE3 compatible with standard SO-8 PCB footprints?
No, SQJA84EP-T1_BE3 uses the PowerPAK® SO-8L package-a leadless variant with bottom-exposed drain pads and no gull-wing leads. It requires the dedicated IPC-7351B-compliant land pattern documented in Vishay's Package Drawing 66934, not the traditional SO-8 outline. Using a standard SO-8 footprint will result in insufficient solder joint formation and thermal failure.
Does SQJA84EP-T1_BE3 support 4.5 V logic-level gate drive?
Yes, SQJA84EP-T1_BE3 is fully enhanced at VGS = 4.5 V, delivering RDS(on) = 0.0160 Ω at ID = 8 A. Its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V, ensuring reliable turn-on with 3.3 V or 5 V microcontroller outputs without external level shifters-critical for cost-sensitive automotive body control modules.
What avalanche energy rating does SQJA84EP-T1_BE3 have?
SQJA84EP-T1_BE3 is rated for single-pulse avalanche energy EAS = 36 mJ at L = 0.1 mH, verified per JEDEC JESD24-1. This specification supports robust operation during inductive load switching transients, such as fuel injector coil de-energization or motor phase commutation, without requiring external snubbers in properly designed layouts.
How is thermal performance validated for SQJA84EP-T1_BE3?
Thermal resistance values for SQJA84EP-T1_BE3-including RthJC = 2.7 °C/W and RthJA = 70 °C/W-are measured per JEDEC JESD51-14 (transient dual-interface) and JESD51-2 (steady-state) standards. The RthJA value assumes mounting on a 1" × 1" FR4 PCB with 2 oz. copper on both sides; actual board-level performance depends on copper area, layer stack-up, and airflow.
SQJA84EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8 Dual
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8 Dual
SQJA84EP-T1_BE3 FAQ
1.How can I place an order for SQJA84EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA84EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA84EP-T1_BE3 reliable?
The price and inventory of SQJA84EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA84EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA84EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA84EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA84EP-T1_BE3?
SQJA84EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA84EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA84EP-T1_BE3?
For technical support, including SQJA84EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA84EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA84EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA84EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA84EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA84EP-T1_BE3?
All SQJA84EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA84EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA84EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA84EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJA84EP-T1_BE3 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

