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Vishay Siliconix SQJA84EP-T1_BE3

Part No.:
SQJA84EP-T1_BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® SO-8 Dual
Datasheet:
AetrixSQJA84EP-T1_BE3.pdf
Description:
N-CHANNEL 80-V (D-S) 175C MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,995

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Product details

Overview

SQJA84EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 80 V drain-source voltage, 46 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It delivers RDS(on) of 0.0125 Ω at VGS = 10 V and 0.0160 Ω at VGS = 4.5 V in a PowerPAK® SO-8L package, designed for high-efficiency DC-DC conversion and motor control in under-hood automotive systems.

For engineers reviewing the SQJA84EP-T1_BE3 datasheet, SQJA84EP-T1_BE3 pinout, SQJA84EP-T1_BE3 application, or SQJA84EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, thermal performance (RthJC = 2.7 °C/W), and compatibility with 4.5 V logic-level gate drive in space-constrained power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 21–35 nC, Qgd = 3 nC) supports efficient operation in synchronous buck converters operating up to 500 kHz.

The device integrates a robust body diode with VSD = 0.82–1.2 V at IF = 10 A and is characterized for avalanche energy (EAS = 36 mJ), enabling reliable operation in inductive load switching and regenerative braking circuits.

Key Specifications

Parameter Value and Actual Design Meaning
VDS80 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and high-side switch applications
RDS(on) @ VGS = 10 V0.0125 Ω - Enables ≤ 5.8 W conduction loss at 46 A, critical for thermally constrained engine control units
RDS(on) @ VGS = 4.5 V0.0160 Ω - Ensures full enhancement with standard 5 V microcontroller GPIOs without level-shifting
ID (continuous, TC = 25 °C)46 A - Supports high-current loads such as radiator fan drivers and EPS assist motors
TJ max+175 °C - Qualified for under-hood placement near engines and exhaust systems per AEC-Q101
RthJC2.7 °C/W - Allows direct thermal coupling to heatsink or copper pour for >30 W power dissipation
Qg21–35 nC - Enables low gate-drive power consumption and <35 ns total switching time (td(on) + tr + td(off) + tf)

Pinout & Package

Package: PowerPAK® SO-8L - leadless, surface-mount, 5.13 mm × 6.15 mm footprint with exposed drain pad on bottom side for enhanced thermal conduction. Compliant with IPC-7351B SOIC-8 variant land pattern.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 7, 8 (Drain pads)Drain (D)Multiple parallel drain terminals connected to internal die source metallization; must be soldered to large PCB copper area for thermal management
5Gate (G)Control input requiring <35 nC charge; layout must minimize trace inductance to suppress ringing during hard switching
6Source (S)Power return path and gate reference; tied to PCB ground plane with low-inductance connection to reduce shoot-through risk

Key Features

Feature Design Value
AEC-Q101 qualifiedValidated for automotive mission-critical applications including engine management and ADAS power supplies
100 % Rg and UIS testedEach unit screened for gate resistance consistency and unclamped inductive switching robustness-no field failures due to transient overstress
TrenchFET® architectureDelivers 23 % lower RDS(on) vs. planar MOSFETs at same die size, reducing board area in dual-phase controllers
PowerPAK SO-8L packageThermal resistance 3× lower than standard SO-8; enables 55 W PD at TC = 25 °C without external heatsink
175 °C operationSupports extended lifetime at elevated ambient temperatures common in EV power distribution modules

Applications

Engine Control Unit (ECU) Fuel Injector Driver Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side switching MOSFET controlling injector coil current with precise 1–5 ms pulse width modulation.

Use Value: RDS(on) ≤ 0.016 Ω at 4.5 V gate drive ensures <1.2 W conduction loss per injector, minimizing ECU thermal load.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converter for infotainment head units.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300–500 kHz with minimal switching losses.

Use Value: Qg = 21–35 nC and Ciss = 1565–2100 pF enable <15 ns rise/fall times, reducing transition losses by 38 % vs. legacy SO-8 devices.

Electric Power Steering (EPS) Motor Phase Leg Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge phase leg in 24 V EPS motor driver handling peak currents up to 40 A.

IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in three-phase inverter with integrated bootstrap gate drive.

Use Value: 100 % UIS-tested avalanche capability (EAS = 36 mJ) prevents failure during motor stall or short-circuit events.

Use Scenario: PWM-controlled blower motor driver in climate control systems with variable speed demand.

IC Role / Device Role / Timing Role: Low-side power switch modulating motor current at 20–100 Hz with soft-start ramping.

Use Value: RthJC = 2.7 °C/W allows direct mounting to aluminum chassis, eliminating discrete heatsinks and reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N8F7AGRDS(on) = 0.0019 Ω @ 10 V (lower), but 5× higher Qg (110 nC); PowerFLAT 5x6 packageBetter conduction efficiency but slower switching; suited for <100 kHz applications onlySelect when lowest RDS(on) dominates over switching loss; verify gate driver can supply 110 nC per cycle
IRF3710PBFLegacy TO-220 package; RDS(on) = 0.028 Ω @ 10 V; no AEC-Q101 qualification; RthJC = 1.5 °C/WLarger footprint, higher thermal resistance, non-automotive grade; requires mechanical heatsinkAcceptable for non-automotive industrial prototypes; not suitable for production automotive designs

Compared with STL220N8F7AG and IRF3710PBF, SQJA84EP-T1_BE3 offers optimal balance of low RDS(on), moderate Qg, AEC-Q101 compliance, and compact PowerPAK SO-8L thermal performance-making it the preferred choice for volume automotive power stages where reliability, size, and efficiency are jointly constrained.

Availability

SQJA84EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, DC-DC conversion, electric power steering, and HVAC blower motor applications requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQJA84EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA84EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-current switching in safety-critical vehicle subsystems.

FAQ

What is the maximum junction temperature rating for SQJA84EP-T1_BE3?

The SQJA84EP-T1_BE3 is rated for a maximum junction temperature of +175 °C, validated per AEC-Q101 stress test conditions. This rating enables operation in under-hood environments where ambient temperatures exceed 125 °C, provided thermal design maintains TJ ≤ 175 °C using the specified RthJC = 2.7 °C/W path. Derating curves in the datasheet confirm sustained 46 A current capability at TC = 125 °C.

Is SQJA84EP-T1_BE3 compatible with standard SO-8 PCB footprints?

No, SQJA84EP-T1_BE3 uses the PowerPAK® SO-8L package-a leadless variant with bottom-exposed drain pads and no gull-wing leads. It requires the dedicated IPC-7351B-compliant land pattern documented in Vishay's Package Drawing 66934, not the traditional SO-8 outline. Using a standard SO-8 footprint will result in insufficient solder joint formation and thermal failure.

Does SQJA84EP-T1_BE3 support 4.5 V logic-level gate drive?

Yes, SQJA84EP-T1_BE3 is fully enhanced at VGS = 4.5 V, delivering RDS(on) = 0.0160 Ω at ID = 8 A. Its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V, ensuring reliable turn-on with 3.3 V or 5 V microcontroller outputs without external level shifters-critical for cost-sensitive automotive body control modules.

What avalanche energy rating does SQJA84EP-T1_BE3 have?

SQJA84EP-T1_BE3 is rated for single-pulse avalanche energy EAS = 36 mJ at L = 0.1 mH, verified per JEDEC JESD24-1. This specification supports robust operation during inductive load switching transients, such as fuel injector coil de-energization or motor phase commutation, without requiring external snubbers in properly designed layouts.

How is thermal performance validated for SQJA84EP-T1_BE3?

Thermal resistance values for SQJA84EP-T1_BE3-including RthJC = 2.7 °C/W and RthJA = 70 °C/W-are measured per JEDEC JESD51-14 (transient dual-interface) and JESD51-2 (steady-state) standards. The RthJA value assumes mounting on a 1" × 1" FR4 PCB with 2 oz. copper on both sides; actual board-level performance depends on copper area, layer stack-up, and airflow.

SQJA84EP-T1_BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
PowerPAK® SO-8 Dual
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
55W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8 Dual

SQJA84EP-T1_BE3 FAQ

1.How can I place an order for SQJA84EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA84EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA84EP-T1_BE3 reliable?

The price and inventory of SQJA84EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA84EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJA84EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA84EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA84EP-T1_BE3?

SQJA84EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA84EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA84EP-T1_BE3?

For technical support, including SQJA84EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA84EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJA84EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJA84EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA84EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJA84EP-T1_BE3?

All SQJA84EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA84EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA84EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJA84EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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