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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM120N04-1M7_GE3

Name: SQM120N04-1M7_GE3
Brand: Vishay Siliconix
SKU: SQM120N04-1M7_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM120N04-1M7_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM120N04-1M7_GE3.pdf

Description:: MOSFET N-CH 40V 120A TO263

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Product details

Overview

SQM120N04-1M7_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET optimized for high-current 40 V DC-DC conversion, motor drive, and battery protection circuits. It delivers 120 A continuous drain current at TC = 25 °C, 40 V V_DS, and 1.7 mΩ R_DS(on) at V_GS = 10 V, with AEC-Q101 qualification and 175 °C maximum junction temperature.

For engineers reviewing the SQM120N04-1M7_GE3 datasheet, SQM120N04-1M7_GE3 pinout, SQM120N04-1M7_GE3 application, or SQM120N04-1M7_GE3 equivalent, key selection criteria include its low R_DS(on) at elevated temperature, robust avalanche energy rating (361 mJ), and TO-263 package thermal performance (R_thJC = 0.4 °C/W) for high-power automotive power stages.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve high channel density and low on-resistance while maintaining fast switching characteristics. Its gate charge profile (Q_g = 206–310 nC, Q_gd = 44 nC) supports efficient hard-switching in synchronous buck converters and H-bridge motor drivers.

The device integrates a robust body diode with V_SD = 0.86–1.5 V at I_F = 80 A and is fully rated for unclamped inductive switching (UIS), supporting reliable operation under transient load dump and inductive kickback conditions common in 12 V/24 V automotive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V nominal automotive systems including load-dump transients.
R_DS(on) @ V_GS = 10 V	1.7 mΩ max - Enables <1.7 W conduction loss at 100 A, critical for high-efficiency power stages.
I_D Continuous	120 A @ T_C = 25 °C - Supports high-current battery disconnect, starter solenoid control, and traction inverters.
E_AS	361 mJ - Confirmed single-pulse avalanche energy ensures ruggedness during inductive turn-off without external snubbers.
R_thJC	0.4 °C/W - Low junction-to-case thermal resistance enables direct heatsink mounting for >300 W power dissipation.
AEC-Q101 Qualified	Yes - Validated for automotive applications per stress test requirements including HTGB, HTRB, and UIS.
Q_g	206–310 nC - Gate charge value directly impacts driver sizing and switching loss in PWM frequency range up to 200 kHz.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated heat sink tab (drain-connected), 3-lead configuration.

Pin/Terminal	Circuit Role	Design Meaning
Tab (exposed metal)	Drain (D)	Primary thermal path and high-current output node; must be soldered to PCB copper pour or heatsink.
Lead 1 (left)	Source (S)	Power return path; connects to ground plane or low-side switch node; carries full load current.
Lead 2 (right)	Gate (G)	Control input; requires low-impedance driver due to 1.14 Ω typical gate resistance and 206+ nC total charge.

Key Features

Feature	Design Value
TrenchFET® Technology	Enables ultra-low R_DS(on) and high cell density for compact high-current designs without sacrificing switching speed.
100 % R_g and UIS Tested	Each unit verified for gate resistance consistency and unclamped inductive switching robustness-critical for automotive reliability.
Low R_thJC (0.4 °C/W)	Allows direct thermal coupling to heatsinks, enabling stable operation above 100 W without forced air cooling.
175 °C Maximum Junction Temperature	Supports operation in engine bay environments where ambient exceeds 125 °C, extending system lifetime.
Lead (Pb)-free and Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C for environmentally constrained automotive supply chains.

Applications

Automotive Battery Disconnect Switch	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-side main battery isolation in 12 V/48 V dual-battery architectures during fault conditions or key-off state. IC Role / Device Role / Timing Role: Power switch controlling bidirectional current flow between batteries; operates in static on/off mode with occasional fast transitions. Use Value: 1.7 mΩ R_DS(on) minimizes standby voltage drop and self-heating, while AEC-Q101 qualification ensures long-term reliability under vibration and thermal cycling.	Use Scenario: Synchronous rectifier in 48 V → 12 V bi-directional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side power switch operating at 100–200 kHz PWM frequency with high peak current (≥100 A). Use Value: Low Q_gd/Q_g ratio and 0.4 °C/W R_thJC reduce switching losses and enable efficient thermal management in space-constrained power modules.
Electric Power Steering (EPS) Motor Driver	Commercial Vehicle Starter Solenoid Replacement
Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS motor (typically 20–40 A RMS, 100+ A peak). IC Role / Device Role / Timing Role: High-current, fast-switching N-channel MOSFET in H-bridge topology; subject to repetitive UIS events during motor commutation. Use Value: 361 mJ E_AS and 100 % UIS testing ensure survival under worst-case inductive flyback without external clamping diodes.	Use Scenario: Solid-state replacement for electromechanical starter solenoids in heavy-duty trucks and buses, handling cranking currents up to 120 A. IC Role / Device Role / Timing Role: High-current DC switch activated for short durations (<5 s); requires low on-resistance and high surge current capability (I_DM = 480 A). Use Value: 480 A pulsed drain current rating and 175 °C T_J(max) allow safe operation during repeated cold-cranking cycles without thermal derating.

Automotive Battery Disconnect Switch

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side main battery isolation in 12 V/48 V dual-battery architectures during fault conditions or key-off state.

IC Role / Device Role / Timing Role: Power switch controlling bidirectional current flow between batteries; operates in static on/off mode with occasional fast transitions.

Use Value: 1.7 mΩ R_DS(on) minimizes standby voltage drop and self-heating, while AEC-Q101 qualification ensures long-term reliability under vibration and thermal cycling.

Use Scenario: Synchronous rectifier in 48 V → 12 V bi-directional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side power switch operating at 100–200 kHz PWM frequency with high peak current (≥100 A).

Use Value: Low Q_gd/Q_g ratio and 0.4 °C/W R_thJC reduce switching losses and enable efficient thermal management in space-constrained power modules.

Electric Power Steering (EPS) Motor Driver

Commercial Vehicle Starter Solenoid Replacement

Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS motor (typically 20–40 A RMS, 100+ A peak).

IC Role / Device Role / Timing Role: High-current, fast-switching N-channel MOSFET in H-bridge topology; subject to repetitive UIS events during motor commutation.

Use Value: 361 mJ E_AS and 100 % UIS testing ensure survival under worst-case inductive flyback without external clamping diodes.

Use Scenario: Solid-state replacement for electromechanical starter solenoids in heavy-duty trucks and buses, handling cranking currents up to 120 A.

IC Role / Device Role / Timing Role: High-current DC switch activated for short durations (<5 s); requires low on-resistance and high surge current capability (I_DM = 480 A).

Use Value: 480 A pulsed drain current rating and 175 °C T_J(max) allow safe operation during repeated cold-cranking cycles without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, 0.75 mΩ R_DS(on), TO-263, AEC-Q101, but higher gate charge (Q_g = 390 nC).	Better conduction loss at very high current; less suitable for high-frequency switching due to higher Q_g.	Select when minimizing conduction loss dominates over switching loss and layout allows larger gate driver.
IRFS7537PBF	40 V, 120 A, 1.8 mΩ R_DS(on), TO-220AB, AEC-Q101, R_thJC = 0.75 °C/W - higher thermal resistance.	Same current/voltage rating but inferior thermal performance; requires larger heatsink or forced cooling.	Select only if TO-220 footprint is mandatory and thermal margin permits higher junction temperature rise.

Compared with STL220N4F7AG and IRFS7537PBF, SQM120N04-1M7_GE3 offers optimal balance of low R_DS(on), moderate Q_g, and best-in-class R_thJC, making it ideal for thermally constrained, high-reliability automotive power stages where both efficiency and ruggedness are required.

Availability

SQM120N04-1M7_GE3 is available at Aetrix Electronics and suitable for automotive battery management, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply and long-term lifecycle support.

Supply support for SQM120N04-1M7_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM series targets high-current automotive power switching applications, designed specifically to meet AEC-Q101 requirements and deliver low R_DS(on) with robust thermal and avalanche performance in surface-mount packages.

FAQ

What is the maximum continuous drain current rating for SQM120N04-1M7_GE3 at 125 °C case temperature?

The SQM120N04-1M7_GE3 maintains a continuous drain current rating of 120 A even at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and 175 °C maximum junction temperature capability, enabling sustained high-current operation in demanding under-hood environments without derating.

Is SQM120N04-1M7_GE3 qualified for automotive applications?

Yes, SQM120N04-1M7_GE3 is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS). This qualification confirms its suitability for automotive powertrain, chassis, and body electronics applications.

What is the typical gate threshold voltage (V_GS(th)) range for SQM120N04-1M7_GE3?

The SQM120N04-1M7_GE3 has a gate threshold voltage range of 2.5 V to 3.5 V (typical 3.0 V) at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity in electrically noisy automotive environments.

How does the thermal resistance of SQM120N04-1M7_GE3 compare to standard TO-263 MOSFETs?

SQM120N04-1M7_GE3 achieves a junction-to-case thermal resistance (R_thJC) of 0.4 °C/W - significantly lower than typical TO-263 devices (often ≥0.6 °C/W). This is enabled by optimized die attach and internal thermal path design, allowing more than 30 % higher power dissipation before reaching thermal limits.

Does SQM120N04-1M7_GE3 include integrated ESD protection on the gate?

No, SQM120N04-1M7_GE3 does not feature integrated gate ESD protection. Its gate oxide is rated for ±20 V maximum gate-source voltage, and external gate protection (e.g., Zener clamp or RC snubber) is recommended in systems exposed to high-voltage transients or handling risks, especially in automated assembly lines.

SQM120N04-1M7_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 310 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 17350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM120N04-1M7_GE3 FAQ

1.How can I place an order for SQM120N04-1M7_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM120N04-1M7_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM120N04-1M7_GE3 reliable?

The price and inventory of SQM120N04-1M7_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120N04-1M7_GE3 is usually 5 days.

3.What payment methods are accepted for SQM120N04-1M7_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120N04-1M7_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM120N04-1M7_GE3?

SQM120N04-1M7_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM120N04-1M7_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM120N04-1M7_GE3?

For technical support, including SQM120N04-1M7_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120N04-1M7_GE3 requirements.

6.How does Aetrix verify that SQM120N04-1M7_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM120N04-1M7_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120N04-1M7_GE3 meets industry standards.

7.What is the process for return or replacement of SQM120N04-1M7_GE3?

All SQM120N04-1M7_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120N04-1M7_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM120N04-1M7_GE3 part is unused and in its original packaging.

Return procedure for SQM120N04-1M7_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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