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Vishay Siliconix SQM120N04-1M9_GE3
- Part No.:
- SQM120N04-1M9_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM120N04-1M9_GE3.pdf
- Description:
- MOSFET N-CH 40V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:6,849
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Product details
Overview
SQM120N04-1M9_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-263 (D2PAK) package, rated for 40 V VDS, 120 A continuous drain current at TC = 25 °C, and RDS(on) = 1.9 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQM120N04-1M9_GE3 datasheet, SQM120N04-1M9_GE3 pinout, SQM120N04-1M9_GE3 application, or SQM120N04-1M9_GE3 equivalent, key selection criteria include its 0.5 °C/W junction-to-case thermal resistance, 100% Rg and UIS tested reliability, and low gate charge (Qg = 180–270 nC) enabling efficient high-frequency switching in 48 V automotive systems.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-current automotive power stages. Its 1.9 mΩ on-resistance at 10 V gate drive supports high-efficiency operation in synchronous rectification and load switch topologies where thermal management is critical.
The device features integrated source-drain diode with VSD = 0.86–1.5 V at IF = 85 A and is characterized for avalanche energy (EAS = 352 mJ), enabling robustness against inductive switching transients in motor drives and solenoid controls without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 36–48 V nominal automotive battery systems. |
| RDS(on) @ VGS = 10 V | 1.9 mΩ - Enables <1.9 W conduction loss at 100 A, reducing heatsink requirements in compact power modules. |
| ID Continuous @ TC = 25 °C | 120 A - Supports high-current loads such as electric power steering (EPS) and HVAC blower motors. |
| Junction Temp Range | –55 to +175 °C - Validated for under-hood environments including engine bay and transmission control units. |
| Qg Total Gate Charge | 180–270 nC - Determines gate driver power requirement; enables <370 ns turn-off delay with 1 Ω driver for 20 A switching. |
| RthJC | 0.5 °C/W - Allows direct thermal coupling to heatsink via exposed drain tab, critical for maintaining TJ < 175 °C at full load. |
| AEC-Q101 Qualified | Yes - Certified for automotive electronics per stress test standard, including HTGB, HTRB, and UHAST. |
Pinout & Package
TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal dissipation. Three terminals: Drain (tab), Gate (lead 1), Source (lead 2). Mounting requires soldering the drain tab to a large copper area per recommended 0.420" × 0.355" pad layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically and thermally connected to PCB copper pour; carries full load current and dissipates >95% of power loss. |
| Gate (Lead 1) | Control input | Receives 10 V logic-level drive; 4.5–13.7 Ω gate resistance affects switching speed and EMI profile. |
| Source (Lead 2) | Reference node / return path | Provides common reference for gate drive and current sensing; connects to low-side shunt or controller ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Enables ultra-low RDS(on) without sacrificing ruggedness-critical for minimizing I²R losses in high-current 48 V architectures. |
| AEC-Q101 Qualification | Validates reliability for automotive safety-critical functions including ASIL-B compliant power stages. |
| 100% Rg and UIS Tested | Ensures gate robustness against overvoltage and single-pulse avalanche survival up to 84 A and 352 mJ-no screening failures in production. |
| Low RthJC = 0.5 °C/W | Permits direct thermal path from die to heatsink, enabling >200 W power handling with minimal ΔT between junction and case. |
| High IDM = 480 A Pulsed | Supports short-duration peak currents during motor startup or regenerative braking without thermal runaway. |
Applications
| Electric Power Steering (EPS) | 48 V DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-current H-bridge driving 3-phase EPS motor with peak loads >80 A. IC Role / Device Role / Timing Role: High-side and low-side switching element in synchronous buck/boost topology with PWM frequency ≥20 kHz. Use Value: 1.9 mΩ RDS(on) reduces conduction loss by >35% vs. comparable 3.5 mΩ MOSFETs, extending system efficiency to >97% at 5 kW. | Use Scenario: Primary-side switch in isolated bidirectional DC-DC converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 100–200 kHz with zero-voltage switching (ZVS) assist. Use Value: Low Qgd/Qgs ratio (≈0.9) improves ZVS margin; 352 mJ EAS withstands leakage inductance spikes during soft-switching transitions. |
| Automotive Battery Disconnect Unit (BDU) | On-Board Charger (OBC) Input Stage |
Use Scenario: Solid-state replacement for mechanical contactor in high-voltage battery isolation circuits. IC Role / Device Role / Timing Role: Normally-open load switch controlling 400 A peak fault current with controlled turn-on/turn-off sequencing. Use Value: 480 A pulsed rating and 175 °C TJ rating enable safe interruption of short-circuit events without thermal runaway or bond-wire fusing. | Use Scenario: AC-DC front-end switching stage in 11 kW OBC converting grid AC to 400 V DC bus. IC Role / Device Role / Timing Role: Active clamp or synchronous rectifier MOSFET in totem-pole PFC or LLC resonant converter. Use Value: Low Coss (1180–1475 pF) minimizes capacitive turn-on loss; 100% UIS testing ensures survivability during line surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 0.75 mΩ @ 10 V, TO-263, AEC-Q101 | Higher current rating but larger die size increases gate charge (Qg = 320 nC); requires stronger gate driver. | Preferred when peak current exceeds 150 A and thermal budget allows higher Qg-driven losses. |
| IRFS7537PBF | 40 V, 120 A, RDS(on) = 2.2 mΩ @ 10 V, TO-220AB, AEC-Q101 | Same current rating but TO-220AB package has RthJC = 1.0 °C/W - halves thermal performance vs. SQM120N04-1M9_GE3. | Only suitable for lower-power derated use or non-automotive industrial designs with forced-air cooling. |
Compared with STL220N4F7AG and IRFS7537PBF, SQM120N04-1M9_GE3 delivers optimal balance of low RDS(on), moderate Qg, and superior thermal resistance in TO-263, making it ideal for space-constrained 48 V automotive power stages where efficiency and reliability are co-prioritized.
Availability
SQM120N04-1M9_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V DC-DC converters, and battery disconnect units requiring stable component supply across automotive production lifecycles.
Supply support for SQM120N04-1M9_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM series targets high-current automotive power conversion, designed specifically for AEC-Q101 compliance, high-temperature operation, and low-loss switching in next-generation 48 V mild-hybrid and electrified chassis systems.
FAQ
What is the maximum continuous drain current rating for SQM120N04-1M9_GE3 at 125 °C case temperature?
The SQM120N04-1M9_GE3 maintains a continuous drain current rating of 120 A even at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient, allowing full-rated current delivery in high-ambient under-hood environments without derating.
Is SQM120N04-1M9_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, SQM120N04-1M9_GE3 is well-suited for synchronous rectification due to its 1.9 mΩ RDS(on) at 10 V gate drive and low reverse recovery charge (Qrr implied by fast body diode characteristics). Its 175 °C junction rating and AEC-Q101 qualification ensure reliability in high-duty-cycle, high-temperature converter topologies.
Does SQM120N04-1M9_GE3 have a fully characterized body diode for freewheeling operation?
Yes, the SQM120N04-1M9_GE3 includes a fully characterized intrinsic body diode with VSD = 0.86–1.5 V at IF = 85 A and specified reverse recovery time (trr) derived from dynamic test data. Its 352 mJ single-pulse avalanche energy rating further validates robustness during hard commutation events.
What is the gate threshold voltage range for SQM120N04-1M9_GE3, and how does it affect 3.3 V microcontroller compatibility?
The gate threshold voltage (VGS(th)) for SQM120N04-1M9_GE3 is 2.5–3.5 V at ID = 250 μA. While this allows turn-on with 3.3 V logic, full enhancement requires ≥10 V for rated RDS(on); thus, a dedicated gate driver is required for optimal conduction loss and switching performance in production automotive systems.
How is thermal performance validated for SQM120N04-1M9_GE3 in real-world PCB layouts?
Thermal performance of SQM120N04-1M9_GE3 is validated using a standardized 1" × 1" FR-4 PCB with 2 oz. copper on both sides and 100% copper coverage under the drain tab. Measured RthJA = 40 °C/W and RthJC = 0.5 °C/W are traceable to this configuration; actual board-level performance depends on copper area, layer count, and heatsinking - datasheet provides normalized transient impedance curves for custom thermal modeling.
SQM120N04-1M9_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 270 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8790 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM120N04-1M9_GE3 FAQ
1.How can I place an order for SQM120N04-1M9_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM120N04-1M9_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM120N04-1M9_GE3 reliable?
The price and inventory of SQM120N04-1M9_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120N04-1M9_GE3 is usually 5 days.
3.What payment methods are accepted for SQM120N04-1M9_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120N04-1M9_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM120N04-1M9_GE3?
SQM120N04-1M9_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM120N04-1M9_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM120N04-1M9_GE3?
For technical support, including SQM120N04-1M9_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120N04-1M9_GE3 requirements.
6.How does Aetrix verify that SQM120N04-1M9_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM120N04-1M9_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120N04-1M9_GE3 meets industry standards.
7.What is the process for return or replacement of SQM120N04-1M9_GE3?
All SQM120N04-1M9_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120N04-1M9_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM120N04-1M9_GE3 part is unused and in its original packaging.
Return procedure for SQM120N04-1M9_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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