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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM50N04-4M0L_GE3

Name: SQM50N04-4M0L_GE3
Brand: Vishay Siliconix
SKU: SQM50N04-4M0L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM50N04-4M0L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM50N04-4M0L_GE3.pdf

Description:: MOSFET N-CHANNEL 40V 50A TO263

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Product details

Overview

SQM50N04-4M0L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-263 (D2PAK) package, rated for 40 V V_DS, 50 A continuous drain current at T_C = 25 °C, and R_DS(on) = 4.0 mΩ at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, DC-DC converters, and high-side load switching in under-hood automotive systems.

For engineers reviewing the SQM50N04-4M0L_GE3 datasheet, SQM50N04-4M0L_GE3 pinout, SQM50N04-4M0L_GE3 application, or SQM50N04-4M0L_GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, 100 % R_g and UIS tested reliability, and thermal resistance of 1 °C/W (junction-to-case), critical for thermally constrained automotive power stages.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate charge profile (Q_g = 85–130 nC, Q_gd = 14 nC) supports efficient PWM operation in synchronous buck converters and motor drivers, while the integrated body diode (V_SD = 0.9–1.5 V at I_F = 50 A) enables freewheeling in inductive loads without external diodes.

The device features a robust safe operating area (SOA) with single-pulse avalanche energy rating of 192 mJ and pulsed drain current capability of 200 A, supporting transient overcurrent protection in starter motor circuits and solenoid drivers. Thermal design is enabled by its low R_thJC = 1 °C/W and R_thJA = 40 °C/W on 1"² FR-4 PCB - validated per JEDEC JESD51-2.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	40 V - Supports 12 V/24 V automotive battery rails with margin against load dump transients.
R_DS(on) @ V_GS = 10 V	4.0 mΩ max - Enables <1 W conduction loss at 50 A, reducing heatsink requirements.
R_DS(on) @ V_GS = 4.5 V	5.5 mΩ max - Ensures reliable turn-on with standard 3.3 V/5 V logic-level controllers.
I_D Continuous @ T_C = 25 °C	50 A - Sustains high-current loads such as fuel pumps, radiator fans, and HVAC blowers.
Junction Temp Range	−55 °C to +175 °C - Qualified for under-hood placement near engines and exhaust systems.
Avalanche Energy (E_AS)	192 mJ - Withstands inductive kickback in relay and solenoid switching without failure.
Q_g / Q_gd	85–130 nC / 14 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge topologies.

Pinout & Package

TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Mounting requires soldering the drain tab to a large copper pour for optimal heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤±20 V drive; 1–3.3 Ω gate resistance specified for EMI control.
D	Drain	Main high-side power terminal; electrically and thermally connected to exposed metal tab; must be tied to system ground or high-voltage rail.
S	Source	Reference node for gate drive; connects to load return path; forms common source for N-channel high-side switch configuration.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced switching + conduction losses in 10–500 kHz power stages.
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, HTRB, and UHAST - ensures reliability in harsh thermal and vibration environments.
100 % R_g and UIS testing	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures due to gate oxide defects or avalanche overstress.
Low R_thJC = 1 °C/W	Enables >100 W power dissipation with minimal ΔT between junction and heatsink, simplifying thermal interface design.
Integrated body diode	Optimized for fast recovery (t_rr not specified but typical for TrenchFET) and low forward voltage (0.9–1.5 V), supporting freewheeling in brushed DC motor drives.

Applications

Engine Control Unit (ECU) Power Stage	Automotive DC-DC Converter
Use Scenario: High-side switching of fuel injectors, ignition coils, and turbocharger actuators in modern gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Primary power switch controlling 12 V/24 V inductive loads with precise PWM timing and fast turn-off to minimize coil energy loss. Use Value: 4.0 mΩ R_DS(on) reduces I²R heating during sustained injection pulses; 175 °C rating allows placement near hot ECU components.	Use Scenario: Synchronous rectification in 12 V → 5 V/3.3 V buck converters powering ADAS sensors and infotainment modules. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, commutated at 200–500 kHz with tight dead-time control. Use Value: Low Q_gd/Q_g ratio minimizes shoot-through risk; 4.5 V R_DS(on) ensures full enhancement with controller's bootstrap gate drive.
Electric Power Steering (EPS) Motor Driver	Body Control Module (BCM) Load Switch
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS assist motors (typically 12 V/24 V, 30–60 A peak). IC Role / Device Role / Timing Role: High-current, high-reliability N-channel switch handling PWM-modulated phase currents with fast rise/fall times (11–17 ns). Use Value: 200 A pulsed current rating accommodates motor stall conditions; SOA curve supports short-circuit withstand for >10 μs.	Use Scenario: Solid-state replacement for mechanical relays controlling headlights, fog lamps, and rear window defrosters. IC Role / Device Role / Timing Role: Single-pole, high-side load switch with integrated diagnostics (via external current sense) and controlled inrush limiting. Use Value: AEC-Q101 qualification ensures 15+ year lifetime; low R_DS(on) eliminates relay contact wear and arcing noise.

Engine Control Unit (ECU) Power Stage

Automotive DC-DC Converter

Use Scenario: High-side switching of fuel injectors, ignition coils, and turbocharger actuators in modern gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Primary power switch controlling 12 V/24 V inductive loads with precise PWM timing and fast turn-off to minimize coil energy loss.

Use Value: 4.0 mΩ R_DS(on) reduces I²R heating during sustained injection pulses; 175 °C rating allows placement near hot ECU components.

Use Scenario: Synchronous rectification in 12 V → 5 V/3.3 V buck converters powering ADAS sensors and infotainment modules.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, commutated at 200–500 kHz with tight dead-time control.

Use Value: Low Q_gd/Q_g ratio minimizes shoot-through risk; 4.5 V R_DS(on) ensures full enhancement with controller's bootstrap gate drive.

Electric Power Steering (EPS) Motor Driver

Body Control Module (BCM) Load Switch

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS assist motors (typically 12 V/24 V, 30–60 A peak).

IC Role / Device Role / Timing Role: High-current, high-reliability N-channel switch handling PWM-modulated phase currents with fast rise/fall times (11–17 ns).

Use Value: 200 A pulsed current rating accommodates motor stall conditions; SOA curve supports short-circuit withstand for >10 μs.

Use Scenario: Solid-state replacement for mechanical relays controlling headlights, fog lamps, and rear window defrosters.

IC Role / Device Role / Timing Role: Single-pole, high-side load switch with integrated diagnostics (via external current sense) and controlled inrush limiting.

Use Value: AEC-Q101 qualification ensures 15+ year lifetime; low R_DS(on) eliminates relay contact wear and arcing noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A (T_C = 25 °C), R_DS(on) = 1.6 mΩ @ 10 V, DFN5x6 package	Higher current, lower R_DS(on), but smaller thermal mass and no exposed drain tab	Preferred for space-constrained, high-efficiency 48 V mild-hybrid auxiliary converters where PCB-level thermal spreading is optimized.
IRF1404ZLPbF	40 V, 180 A, R_DS(on) = 3.8 mΩ @ 10 V, TO-220 package, non-AEC-Q101	Larger footprint, higher R_thJA, lacks automotive qualification and UIS screening	Suitable for cost-sensitive industrial motor controls where AEC-Q101 and under-hood temperature are not required.

Compared with STL220N4F7AG and IRF1404ZLPbF, the SQM50N04-4M0L_GE3 offers balanced performance: lower thermal resistance than TO-220 alternatives, AEC-Q101 assurance missing in IRF1404ZLPbF, and more robust package mounting than DFN devices - making it optimal for mainstream automotive power distribution where reliability, serviceability, and thermal management coexist.

Availability

SQM50N04-4M0L_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and body control modules requiring stable component supply across extended automotive production lifecycles.

Supply support for SQM50N04-4M0L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQM50N04-4M0L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems where efficiency, ruggedness, and long-term reliability are mandatory.

FAQ

What is the maximum continuous drain current rating for SQM50N04-4M0L_GE3 at 125 °C case temperature?

The SQM50N04-4M0L_GE3 maintains a continuous drain current rating of 50 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification for sustained operation in hot under-hood environments. Derating is not required until beyond 125 °C case temperature, where the datasheet confirms stable 50 A performance up to T_C = 125 °C before linear reduction begins.

Is SQM50N04-4M0L_GE3 suitable for 4.5 V logic-level gate drive applications?

Yes, SQM50N04-4M0L_GE3 is fully compatible with 4.5 V gate drive: its R_DS(on) is guaranteed at 5.5 mΩ max at V_GS = 4.5 V and I_D = 20 A. This enables direct interfacing with 5 V microcontrollers and automotive power management ICs without level-shifting, while maintaining low conduction loss in battery-powered and start-stop systems.

Does SQM50N04-4M0L_GE3 have an integrated body diode, and what is its forward voltage?

Yes, SQM50N04-4M0L_GE3 includes an integrated body diode with a forward voltage (V_SD) of 0.9 V typical and 1.5 V maximum at I_F = 50 A and V_GS = 0 V. This diode supports freewheeling in inductive loads like solenoids and motors, eliminating need for external catch diodes in many automotive switch configurations.

What is the gate threshold voltage range for SQM50N04-4M0L_GE3, and how does it impact drive circuit design?

The gate threshold voltage (V_GS(th)) for SQM50N04-4M0L_GE3 is 1.5 V minimum, 2.0 V typical, and 2.5 V maximum at I_D = 250 μA. This tight range ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with 3.3 V or 5 V logic without overdesigning gate drive strength - critical for noise-immune automotive signal integrity.

How is thermal performance characterized for SQM50N04-4M0L_GE3, and what is its junction-to-case thermal resistance?

SQM50N04-4M0L_GE3 has a junction-to-case (drain) thermal resistance (R_thJC) of 1.0 °C/W, measured per JEDEC standards with the drain tab soldered to a 1"² FR-4 PCB. This low value enables efficient heat transfer to external heatsinks or chassis mounts, supporting >100 W continuous power dissipation when properly mounted - a key advantage over TO-220 or DPAK alternatives in space-constrained automotive modules.

SQM50N04-4M0L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM50N04-4M0L_GE3 FAQ

1.How can I place an order for SQM50N04-4M0L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM50N04-4M0L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM50N04-4M0L_GE3 reliable?

The price and inventory of SQM50N04-4M0L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM50N04-4M0L_GE3 is usually 5 days.

3.What payment methods are accepted for SQM50N04-4M0L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM50N04-4M0L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM50N04-4M0L_GE3?

SQM50N04-4M0L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM50N04-4M0L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM50N04-4M0L_GE3?

For technical support, including SQM50N04-4M0L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM50N04-4M0L_GE3 requirements.

6.How does Aetrix verify that SQM50N04-4M0L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM50N04-4M0L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM50N04-4M0L_GE3 meets industry standards.

7.What is the process for return or replacement of SQM50N04-4M0L_GE3?

All SQM50N04-4M0L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM50N04-4M0L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM50N04-4M0L_GE3 part is unused and in its original packaging.

Return procedure for SQM50N04-4M0L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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