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Vishay Siliconix SQP120P06-6M7L_GE3
- Part No.:
- SQP120P06-6M7L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP120P06-6M7L_GE3.pdf
- Description:
- MOSFET P-CH 60V TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,820
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Product details
Overview
SQP120P06-6M7L_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-current DC-DC conversion, battery disconnect, and reverse polarity protection in 12 V/24 V vehicle systems. It delivers -120 A continuous drain current at TC = 25 °C, features RDS(on) of 6.7 mΩ at VGS = -10 V, and operates up to +175 °C junction temperature in a TO-220AB package.
For engineers reviewing the SQP120P06-6M7L_GE3 datasheet, SQP120P06-6M7L_GE3 pinout, SQP120P06-6M7L_GE3 application, or SQP120P06-6M7L_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(on) at -4.5 V gate drive (8.8 mΩ), 100% UIS tested ruggedness, and thermal resistance of 0.5 °C/W (junction-to-case).
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with Qg = 270 nC (max) and Qgd = 43 nC (max). Its gate threshold voltage range of -1.5 V to -2.5 V ensures reliable turn-on with standard automotive logic-level drivers.
The device integrates a robust body diode with VSD = -0.95 V (typ) at -100 A and ISM = -480 A pulsed source current capability, enabling bidirectional energy handling in regenerative braking or load dump circuits without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | -60 V - Supports 24 V automotive systems with 2× transient margin against ISO 7637-2 pulse 5a (up to -75 V). |
| RDS(on) @ -10 V | 6.7 mΩ - Enables <1.2 W conduction loss at -100 A, reducing heatsink requirements in high-power battery switches. |
| ID (Cont.) @ TC=25°C | -120 A - Sustains peak starter motor or HVAC compressor loads without derating when mounted on ≥1"² copper area. |
| EAS (Single Pulse) | 320 mJ - Withstands repetitive inductive switching events in solenoid drivers without avalanche failure. |
| RthJC | 0.5 °C/W - Allows direct heatsink mounting for >250 W power dissipation with ≤125 °C case temperature rise. |
| AEC-Q101 Qualified | Verified per stress test conditions - Meets automotive reliability standards for under-hood deployment up to 175 °C TJ. |
| Qg (Max) | 270 nC - Compatible with standard gate drivers (e.g., UCC27531) delivering ≥1 A peak current for <23 ns td(on). |
Pinout & Package
TO-220AB package with isolated drain tab (D), source (S), and gate (G) terminals. Mounting hole enables mechanical fixation and thermal interface to heatsink. Drain tab electrically connected to die substrate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain Tab) | Main high-side current path and thermal interface | Electrically tied to internal drain; must be insulated from chassis unless system ground reference permits direct heatsink contact. |
| S (Source) | Reference node for gate control and current return path | Connected to system ground or battery negative in high-side switch configurations; defines VGS reference. |
| G (Gate) | Control input for channel conduction | Requires negative voltage relative to source to turn on; gate resistor selection critical to limit dV/dt-induced shoot-through in half-bridge topologies. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 6.7 mΩ RDS(on) in TO-220AB - 35% lower on-resistance than planar P-channel equivalents at same voltage rating. |
| 100% UIS tested | Guarantees single-pulse avalanche energy handling up to 320 mJ - eliminates need for external snubbers in inductive load switching. |
| Low RDS(on) at -4.5 V | 8.8 mΩ enables full enhancement using 5 V microcontroller GPIOs - supports direct drive in battery management ICs with integrated gate drivers. |
| 175 °C maximum TJ | Permits operation in engine compartment locations without forced air cooling - validated for continuous use at 150 °C ambient with 25 °C rise. |
| AEC-Q101 qualification | Includes HTGB, HTRB, AC/DC life test, and ESD (HBM >2 kV) - meets Tier-1 supplier requirements for powertrain and chassis modules. |
Applications
| Automotive Battery Disconnect | 12 V/24 V DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Isolating 12 V lead-acid battery during key-off to prevent parasitic drain from infotainment and telematics modules. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as controlled series switch between battery positive and load rail. Use Value: 6.7 mΩ RDS(on) limits voltage drop to <0.8 V at 120 A cold-cranking surge, preserving cranking voltage margin while enabling <10 μA standby leakage. |
Use Scenario: Synchronous rectification in 24 V to 5 V buck converter for ADAS camera ECU power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses in continuous conduction mode. Use Value: 8.8 mΩ RDS(on) at -4.5 V allows gate drive from controller's logic-level output, cutting rectifier losses by 65% versus 40 V Schottky (VF = 0.55 V). |
| Reverse Polarity Protection | Engine Control Unit (ECU) Power Sequencing |
|
Use Scenario: Preventing damage from accidental battery terminal reversal during service in commercial vehicle ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with battery input, conducting only when VGS < Vth (i.e., correct polarity applied). Use Value: -2.5 V maximum VGS(th) ensures immediate turn-off within 100 ns of polarity reversal, limiting fault energy to <5 mJ before fuse interruption. |
Use Scenario: Controlled power-up sequencing of multiple voltage rails (e.g., 5 V, 3.3 V, 1.2 V) in diesel engine ECU after ignition ON. IC Role / Device Role / Timing Role: High-side switch enabling delayed activation of secondary regulators via microcontroller GPIO timing. Use Value: 270 nC total gate charge allows precise 10–100 ms turn-on delay using RC-controlled gate driver, preventing inrush current conflicts across rail domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP120P06T | RDS(on) = 7.5 mΩ @ -10 V; TO-220 package; not AEC-Q101 qualified | Limited to industrial/commercial use; lacks automotive reliability validation and 175 °C TJ rating | Select when cost sensitivity outweighs automotive qualification requirements and ambient temperature stays below 125 °C. |
| IRF9540NPbF | RDS(on) = 200 mΩ @ -10 V; TO-220; rated to 175 °C but not AEC-Q101 tested | Higher conduction loss increases thermal design burden; unsuitable for >10 A continuous automotive loads | Use only in legacy designs where footprint compatibility is mandatory and power levels are <5 A. |
Compared with IXTP120P06T and IRF9540NPbF, SQP120P06-6M7L_GE3 provides 85% lower RDS(on), guaranteed avalanche ruggedness, and full AEC-Q101 compliance - making it the only option qualified for new automotive power distribution modules requiring zero field failures over 15-year service life.
Availability
SQP120P06-6M7L_GE3 is available at Aetrix Electronics and suitable for automotive battery management, engine control unit (ECU) power switching, and 24 V industrial motor drives requiring stable component supply across extended product lifecycles.
Supply support for SQP120P06-6M7L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
SQP120P06-6M7L_GE3 belongs to Vishay's TrenchFET® Automotive P-channel portfolio, engineered specifically for high-current, high-temperature under-hood power switching with AEC-Q101 assurance.
FAQ
What is the maximum continuous drain current rating for SQP120P06-6M7L_GE3 at 125 °C case temperature?
The SQP120P06-6M7L_GE3 supports -87 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature limit. Engineers must verify PCB copper area and heatsink interface to maintain TC ≤ 125 °C under full load.
Does SQP120P06-6M7L_GE3 require a negative gate drive voltage relative to source?
Yes, SQP120P06-6M7L_GE3 is a P-channel MOSFET and requires a gate voltage lower than the source to turn on - typically -10 V or -4.5 V relative to source. Its gate threshold voltage range of -1.5 V to -2.5 V means it begins conducting significantly when VGS falls below -1.5 V, and achieves full enhancement at -10 V. Driving G above S will keep the device fully off.
Is SQP120P06-6M7L_GE3 suitable for synchronous rectification in a 24 V buck converter?
Yes, SQP120P06-6M7L_GE3 is well-suited for low-side synchronous rectification in 24 V input buck converters due to its 8.8 mΩ RDS(on) at -4.5 V, enabling direct drive from common controller outputs. Its 320 mJ avalanche energy rating also protects against voltage spikes during discontinuous conduction mode transitions, improving system robustness without added clamping components.
What is the thermal resistance from junction to case (RthJC) for SQP120P06-6M7L_GE3, and how does it impact heatsink design?
The SQP120P06-6M7L_GE3 has a junction-to-case thermal resistance of 0.5 °C/W, measured from die to the drain tab surface. This low value allows efficient heat transfer to an external heatsink - for example, at 100 W dissipation, only a 50 °C temperature rise occurs across the die-to-heatsink path. Designers should use thermally conductive interface material and ensure flat, clean mounting surfaces to preserve this performance.
How is the body diode performance of SQP120P06-6M7L_GE3 characterized, and where is it leveraged in automotive applications?
The SQP120P06-6M7L_GE3 body diode exhibits a forward voltage of -0.95 V (typ) at -100 A and -1.5 V (max), with pulsed source current capability up to -480 A. This performance supports freewheeling in inductive loads like fuel injectors and solenoids, and enables regenerative braking energy recovery in 12 V stop-start systems - eliminating need for external Schottky diodes in many cost-sensitive designs.
SQP120P06-6M7L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 119A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP120P06-6M7L_GE3 FAQ
1.How can I place an order for SQP120P06-6M7L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP120P06-6M7L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP120P06-6M7L_GE3 reliable?
The price and inventory of SQP120P06-6M7L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP120P06-6M7L_GE3 is usually 5 days.
3.What payment methods are accepted for SQP120P06-6M7L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP120P06-6M7L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP120P06-6M7L_GE3?
SQP120P06-6M7L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP120P06-6M7L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP120P06-6M7L_GE3?
For technical support, including SQP120P06-6M7L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP120P06-6M7L_GE3 requirements.
6.How does Aetrix verify that SQP120P06-6M7L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP120P06-6M7L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP120P06-6M7L_GE3 meets industry standards.
7.What is the process for return or replacement of SQP120P06-6M7L_GE3?
All SQP120P06-6M7L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP120P06-6M7L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP120P06-6M7L_GE3 part is unused and in its original packaging.
Return procedure for SQP120P06-6M7L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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