Vishay Siliconix SQR40020ER_GE3

Overview

SQR40020ER from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 100 A continuous drain current at 25 °C, and 2.33 mΩ R_DS(on) at V_GS = 10 V and I_D = 20 A. It features a TO-252 reverse-lead (DPAK) package with Ni-plated drain tab for top-side cooling and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.

For engineers reviewing the SQR40020ER datasheet, SQR40020ER pinout, SQR40020ER application, or SQR40020ER equivalent, key selection criteria include its 175 °C maximum junction temperature, 1.4 °C/W junction-to-case thermal resistance, 84 nC total gate charge, and robust 105.8 mJ single-pulse avalanche energy rating - all critical for high-reliability automotive power switching designs.

Technical Context

This MOSFET employs Vishay's TrenchFET® silicon process to achieve low on-resistance and high current capability in a thermally optimized DPAK package. Its gate threshold voltage (2.5–3.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while the 100 % R_g and UIS tested construction ensures robustness against gate oscillation and unclamped inductive switching stress.

The device integrates a fast body diode with 41–85 ns reverse recovery time and 28–60 nC Q_rr, supporting synchronous rectification and freewheeling in high-frequency buck converters. Its 50 °C/W junction-to-ambient thermal resistance (PCB mount) reflects optimized thermal path design when used with 1" × 1" FR4 copper pads.

Key Specifications

Pinout & Package

Package: TO-252 reverse-lead (DPAK), 3-terminal surface-mount package with drain-connected metal tab (Ni-plated ≥80 % area) for top-side thermal interface. Dimensions per Vishay Doc. #72206: 6.22 mm × 6.73 mm × 1.78 mm (max).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N4F7AG and IRF1404ZLPbF, the SQR40020ER offers superior thermal efficiency (1.4 °C/W R_thJC) and automotive qualification in a compact surface-mount package, making it optimal for space- and reliability-constrained automotive power modules.

Availability

SQR40020ER is available at Aetrix Electronics and suitable for automotive engine control, HVAC motor drives, and 48 V mild hybrid DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for SQR40020ER includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQR40020ER belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine bay and powertrain electronics.

FAQ

What is the maximum continuous drain current rating for the SQR40020ER at 125 °C case temperature?

The SQR40020ER supports 87.5 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 reverse-lead package and ensures safe operation in high-ambient under-hood environments. The SQR40020ER maintains this rating while preserving its 2.33 mΩ R_DS(on) at elevated temperatures, verified per AEC-Q101 test conditions.

Is the SQR40020ER suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?

Yes, the SQR40020ER is well-suited for synchronous rectification in 48 V to 12 V DC-DC converters due to its low 2.33 mΩ R_DS(on), fast body diode (t_rr = 41–85 ns), and low Q_rr (28–60 nC). These characteristics directly reduce conduction and reverse recovery losses at typical switching frequencies of 200–500 kHz. The SQR40020ER's 175 °C junction rating also accommodates high-power density designs without thermal throttling.

Does the SQR40020ER have a gate resistor integrated into the package?

No, the SQR40020ER does not integrate a gate resistor. Its gate resistance (R_g) is specified as 1–3 Ω (measured at 1 MHz), representing intrinsic silicon and interconnect resistance - not an external or integrated discrete resistor. External gate resistors (typically 2–10 Ω) must be added in series with the gate drive signal to control dV/dt, suppress oscillation, and limit peak gate current. This value is confirmed in the Dynamic specifications section of the datasheet for SQR40020ER.

What is the significance of the "reverse lead" configuration in the TO-252 package of the SQR40020ER?

The "reverse lead" configuration in the SQR40020ER's TO-252 package places the source (S) and gate (G) leads on the same side of the outline, opposite the drain tab - differing from standard DPAK orientation. This layout optimizes PCB routing for low-inductance source return paths and simplifies gate driver placement adjacent to the source pin. The SQR40020ER's bottom view explicitly labels G–S–D left-to-right, confirming this arrangement per Vishay Doc. #76927.

How does the Ni-plated drain tab improve thermal performance compared to bare copper in the SQR40020ER?

The Ni-plated drain tab on the SQR40020ER enhances long-term thermal interface reliability by preventing oxidation and corrosion of the copper heatsink surface, maintaining consistent thermal impedance over temperature cycling and humidity exposure. Nickel plating (≥80 % coverage) also improves solder wetting and bond strength during reflow, reducing thermal void formation. This directly supports the SQR40020ER's 1.4 °C/W R_thJC specification under automotive qualification conditions.