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Vishay Siliconix SQS182ELNW-T1_GE3
- Part No.:
- SQS182ELNW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SLW
- Datasheet:
-
SQS182ELNW-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,736
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Product details
Overview
SQS182ELNW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 80 V VDS, 13.2 mΩ RDS(on) at 10 VGS, and 45 A continuous drain current at TC = 25 °C, housed in a wettable flank PowerPAK® 1212-8SLW package for enhanced solder joint inspection in ADAS and motor control modules.
For engineers reviewing the SQS182ELNW-T1_GE3 datasheet, SQS182ELNW-T1_GE3 pinout, SQS182ELNW-T1_GE3 application, or SQS182ELNW-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.3 °C/W), AEC-Q101 qualification status, 175 °C maximum junction temperature, and body diode recovery characteristics (trr = 29–58 ns) critical for high-reliability 12 V/24 V automotive power stages.
Technical Context
This MOSFET employs trench gate architecture optimized for low conduction loss and fast switching in synchronous rectification and H-bridge configurations. Its 0.75 mm profile and wettable flank terminals support automated optical inspection (AOI) of bottom-side solder fillets in space-constrained automotive PCBs.
The device features 100 % Rg and UIS testing per AEC-Q101, with guaranteed RDS(on) performance across -55 °C to +175 °C junction temperature range. Dynamic parameters-including Qg = 26–39 nC, Ciss = 1457–2024 pF, and td(off) = 23–35 ns-enable precise gate drive sizing for PWM frequencies up to 200 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports 12 V/24 V automotive systems with 2× transient margin against load dump events |
| RDS(on) @ 10 VGS | 13.2 mΩ - Enables ≤0.6 W conduction loss at 45 A, reducing heatsink requirements in compact ECUs |
| ID (continuous) | 45 A @ TC = 25 °C - Sustains peak motor phase current in 500 W BLDC drivers without derating |
| RthJC | 2.3 °C/W - Allows direct thermal coupling to copper pour or heatsink for >50 W power dissipation capability |
| trr (body diode) | 29–58 ns - Minimizes reverse recovery loss during freewheeling in high-frequency buck converters |
| Qg | 26–39 nC - Determines gate driver current requirement (~1.3 A avg. for 20 ns rise time) |
| TJ max | +175 °C - Certified for under-hood operation in engine control and transmission modules |
Pinout & Package
PowerPAK® 1212-8SLW: 3.3 mm × 3.3 mm × 0.75 mm wettable flank package with exposed drain paddle on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Low-impedance return path for main current; connected to PCB ground plane via multiple vias |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed copper paddle; primary thermal conduction path to PCB |
| G (top-side pad) | Gate | Control input requiring <20 VGS swing; isolated from drain by 2.0 Ω max Rg for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use with full stress testing including HTGB, HTRB, and TC1000 cycles |
| Wettable flank terminals | Enables AOI-compatible solder joint verification on all eight side terminals without X-ray |
| TrenchFET® Gen IV process | Delivers 15 % lower RDS(on) vs. prior generation at same die size, improving power density |
| 100 % Rg and UIS tested | Ensures gate robustness against voltage spikes and unclamped inductive switching in motor drives |
| Low-profile 0.75 mm height | Permits stacking with adjacent components in multi-layer power modules for ADAS camera ECUs |
Applications
| Electric Power Steering (EPS) | Automotive HVAC Blower |
|---|---|
Use Scenario: High-efficiency 3-phase inverter driving brushless DC motor in column-assist EPS system. IC Role / Device Role / Timing Role: Low-side switch in each half-bridge leg, operating at 20 kHz PWM with synchronous rectification. Use Value: 13.2 mΩ RDS(on) reduces conduction loss by 22 % vs. legacy 17 mΩ devices, enabling 97.4 % inverter efficiency at 40 A. | Use Scenario: Single-phase H-bridge controlling bidirectional airflow in cabin HVAC blower motor. IC Role / Device Role / Timing Role: High- and low-side switching element with integrated body diode conducting freewheel current during dead-time. Use Value: 29–58 ns trr limits reverse recovery energy to <1.2 μJ per cycle, suppressing voltage overshoot during commutation. |
| Engine Control Unit (ECU) Fuel Injector | ADAS Camera Power Module |
Use Scenario: High-speed solenoid driver delivering 12 A peak current with 1 ms on-time for gasoline direct injection. IC Role / Device Role / Timing Role: Single N-channel switch with fast turn-off (tf = 6–9 ns) to precisely control fuel pulse width. Use Value: 35 ns td(off) enables sub-100 μs injector timing resolution, meeting Euro 7 emission calibration requirements. | Use Scenario: Point-of-load (POL) buck converter supplying 3.3 V/5 A to image sensor and ISP in surround-view camera module. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating at 500 kHz with low Qg/Coss ratio for minimal switching loss. Use Value: 26–39 nC Qg and 208–292 pF Coss allow efficient operation with 1 A gate driver, reducing gate drive loss to <12 mW. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V VDS, 1.8 mΩ RDS(on) @ 10 VGS, PowerFLAT™ 5x6 package, no wettable flanks | Limited to 12 V systems; unsuitable for 24 V commercial vehicle applications requiring 80 V rating | Select when lower RDS(on) is prioritized over voltage rating and AOI capability |
| IRFH7185TRPBF | 75 V VDS, 12.5 mΩ RDS(on) @ 10 VGS, PQFN 5x6 mm, AEC-Q101 qualified but no wettable flanks | Marginally lower voltage rating; lacks side-terminal solder inspection capability required for ASIL-B designs | Choose if footprint compatibility with existing 5x6 layouts is mandatory and AOI is not enforced |
Compared with STL220N6F7 and IRFH7185TRPBF, SQS182ELNW-T1_GE3 uniquely combines 80 V rating, wettable flank terminals for IPC Class 3 compliance, and 175 °C operation-making it the only option qualified for high-temperature 24 V commercial vehicle power stages where both voltage margin and solder joint reliability are non-negotiable.
Availability
SQS182ELNW-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, HVAC blower control, and engine control unit applications requiring stable component supply across automotive production lifecycles.
Supply support for SQS182ELNW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS182ELNW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® Gen IV family, engineered specifically for high-power-density, high-temperature power conversion in ASIL-B and ASIL-C systems.
FAQ
What is the maximum junction temperature rating for SQS182ELNW-T1_GE3?
The SQS182ELNW-T1_GE3 has a maximum junction temperature (TJ) of +175 °C, validated per AEC-Q101 stress testing. This rating allows reliable operation in under-hood environments such as transmission control modules and engine ECUs where ambient temperatures exceed 125 °C. The device maintains specified RDS(on) performance up to this limit, with derating applied above TC = 125 °C per the absolute maximum ratings table.
Is SQS182ELNW-T1_GE3 qualified to AEC-Q101 standards?
Yes, SQS182ELNW-T1_GE3 is fully AEC-Q101 qualified. It undergoes 100 % Rg and UIS testing, along with HTGB, HTRB, and temperature cycling per the AEC-Q101 standard. The qualification report (Document Number: 62034) confirms compliance for automotive applications including powertrain and chassis systems, with no exceptions or conditional ratings noted.
What does "wettable flank" mean for SQS182ELNW-T1_GE3 package terminals?
Wettable flank refers to vertical sidewalls on the PowerPAK® 1212-8SLW package's eight perimeter terminals that are metallized to accept solder flow during reflow. This enables automated optical inspection (AOI) of solder fillets without requiring X-ray, satisfying IPC-A-610 Class 3 requirements for automotive safety-critical assemblies. The SQS182ELNW-T1_GE3's wettable flanks are explicitly designed for this purpose and documented in Vishay's S23-0402-Rev. A datasheet.
Can SQS182ELNW-T1_GE3 be used in synchronous rectification topologies?
Yes, SQS182ELNW-T1_GE3 is suitable for synchronous rectification due to its low RDS(on) (13.2 mΩ @ 10 VGS), fast body diode recovery (trr = 29–58 ns), and low Qrr (34–68 nC). These parameters reduce conduction and switching losses in secondary-side buck or flyback converters found in automotive infotainment and ADAS power supplies, where efficiency above 95 % is required at 5–12 A loads.
What is the thermal resistance from junction to case (RthJC) for SQS182ELNW-T1_GE3?
The junction-to-case (drain) thermal resistance RthJC for SQS182ELNW-T1_GE3 is 2.3 °C/W, measured per JESD51-14. This value applies when the exposed drain paddle is soldered to a 1" square FR4 PCB with 2 oz. copper on both sides. In production designs, actual RthJC will vary based on copper area, via count, and thermal interface material-but 2.3 °C/W serves as the baseline for calculating maximum allowable power dissipation at target junction temperature.
SQS182ELNW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8SLW
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2024 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerPAK® 1212-8SLW
SQS182ELNW-T1_GE3 FAQ
1.How can I place an order for SQS182ELNW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS182ELNW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS182ELNW-T1_GE3 reliable?
The price and inventory of SQS182ELNW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS182ELNW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS182ELNW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS182ELNW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS182ELNW-T1_GE3?
SQS182ELNW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS182ELNW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS182ELNW-T1_GE3?
For technical support, including SQS182ELNW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS182ELNW-T1_GE3 requirements.
6.How does Aetrix verify that SQS182ELNW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS182ELNW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS182ELNW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS182ELNW-T1_GE3?
All SQS182ELNW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS182ELNW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS182ELNW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS182ELNW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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