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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage SSM3J112TU,LF

Name: SSM3J112TU,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM3J112TU,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM3J112TU,LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 3-SMD, Flat Leads

Datasheet:: SSM3J112TU,LF.pdf

Description:: MOSFET P-CH 30V 1.1A UFM

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Product details

Overview

SSM3J112TU from Toshiba is a silicon P-channel enhancement-mode MOSFET designed for high-speed switching in low-voltage DC-DC converters, load switches, and battery protection circuits. It features 4 V gate drive capability, maximum on-resistance of 790 mΩ at V_GS = −4 V, −30 V drain-source breakdown voltage, and 1.1 A continuous drain current rating.

For engineers reviewing the SSM3J112TU datasheet, SSM3J112TU pinout, SSM3J112TU application, or SSM3J112TU equivalent, this page delivers verified electrical parameters, thermal derating guidance for FR4 and ceramic mounting, switching timing data (t_on = 14 ns, t_off = 8.5 ns), and real-world design constraints including V_th range (−0.8 to −1.8 V) and C_iss/C_oss values.

Technical Context

This device operates as a single P-channel power switch in common-source configuration with gate-controlled turn-on/turn-off. Its threshold voltage (V_th = −0.8 to −1.8 V) ensures reliable enhancement-mode behavior, while low input capacitance (C_iss = 86 pF) and fast switching times support operation up to several MHz in synchronous buck topologies.

The SSM3J112TU exhibits strong temperature-dependent R_DS(on) behavior-rising from 390 mΩ at 25°C to ~0.8 Ω at 125°C under −4 V drive-and requires careful thermal management due to its 500 mW FR4-rated power dissipation limit and 150°C channel temperature maximum.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V: Maximum blocking voltage in reverse-biased drain-source path; defines safe operating range in 24 V systems.
R_DS(on) max	790 mΩ @ V_GS = −4 V: Determines conduction loss and I²R heating in 4 V logic-driven applications.
I_D (DC)	−1.1 A: Continuous current handling capacity with proper PCB copper area (645 mm² on FR4).
t_on/t_off	14 ns / 8.5 ns: Enables efficient switching above 1 MHz in compact DC-DC regulators.
C_iss	86 pF: Governs gate drive strength requirement and impacts EMI profile during transitions.
V_th	−0.8 to −1.8 V: Specifies minimum gate overdrive needed to ensure full enhancement; critical for 3.3 V/5 V control compatibility.
P_D (FR4)	500 mW: Thermal limit requiring trace width and copper pour design per JEDEC standards.

Pinout & Package

SSM3J112TU uses the UFM (Ultra Small Flat) package: 2.1 mm × 1.7 mm × 0.7 mm, 3-pin surface-mount, tape-and-reel format. Weight: 6.6 mg (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts negative V_GS to modulate channel conductivity; requires ESD-safe handling and gate resistor (RG = 10 Ω typical) for controlled switching.
2 (Source)	Reference node	Connected to system ground or higher potential rail in high-side switch configurations; serves as return path for gate drive current.
3 (Drain)	Power output terminal	Carries switched load current; must be routed with adequate copper area to manage 1.1 A and thermal rise.

Key Features

Feature	Design Value
4 V gate drive compatibility	Enables direct interface with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
Low R_DS(on) at −4 V	Reduces conduction losses in battery-powered systems where gate voltage is limited by cell count.
Fast switching (t_on + t_off < 25 ns)	Minimizes transition losses in high-frequency DC-DC converters, improving efficiency above 500 kHz.
Ultra-compact UFM package	Supports space-constrained designs such as wearables and IoT sensors with minimal PCB footprint (3.57 mm²).
JEITA-compliant marking	Ensures traceability and authenticity via standardized top-side laser marking (TOSHIBA 2-2U1A).

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch to prevent battery discharge through USB VBUS when host is off. Use Value: Low 790 mΩ R_DS(on) at −4 V minimizes voltage drop across protection FET, preserving usable battery capacity.	Use Scenario: Controlled 5 V power delivery to downstream USB peripherals in portable hubs or docking stations. IC Role / Device Role / Timing Role: High-side load switch enabling/disabling VBUS with microcontroller GPIO. Use Value: Fast 14 ns turn-on time ensures rapid power-up response (<100 µs) meeting USB enumeration timing requirements.
DC-DC Synchronous Buck High-Side Switch	LED Dimming Driver
Use Scenario: Upper switch in non-isolated 12 V → 3.3 V buck converter for industrial sensor nodes. IC Role / Device Role / Timing Role: P-channel MOSFET driven by integrated gate driver IC to replace external N-channel + level shifter. Use Value: 86 pF C_iss reduces gate charge demand, lowering driver IC power consumption and heat generation.	Use Scenario: PWM-controlled current sink for monochrome LED backlighting in medical display panels. IC Role / Device Role / Timing Role: Low-side switch (source grounded) modulating LED current at 1–10 kHz. Use Value: −1.8 V maximum V_th ensures full turn-on even with aging MCU outputs or voltage droop on 3.3 V rails.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch to prevent battery discharge through USB VBUS when host is off.

Use Value: Low 790 mΩ R_DS(on) at −4 V minimizes voltage drop across protection FET, preserving usable battery capacity.

Use Scenario: Controlled 5 V power delivery to downstream USB peripherals in portable hubs or docking stations.

IC Role / Device Role / Timing Role: High-side load switch enabling/disabling VBUS with microcontroller GPIO.

Use Value: Fast 14 ns turn-on time ensures rapid power-up response (<100 µs) meeting USB enumeration timing requirements.

DC-DC Synchronous Buck High-Side Switch

LED Dimming Driver

Use Scenario: Upper switch in non-isolated 12 V → 3.3 V buck converter for industrial sensor nodes.

IC Role / Device Role / Timing Role: P-channel MOSFET driven by integrated gate driver IC to replace external N-channel + level shifter.

Use Value: 86 pF C_iss reduces gate charge demand, lowering driver IC power consumption and heat generation.

Use Scenario: PWM-controlled current sink for monochrome LED backlighting in medical display panels.

IC Role / Device Role / Timing Role: Low-side switch (source grounded) modulating LED current at 1–10 kHz.

Use Value: −1.8 V maximum V_th ensures full turn-on even with aging MCU outputs or voltage droop on 3.3 V rails.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011UFG-7	R_DS(on) = 500 mΩ @ −4.5 V; slightly lower V_DS (−20 V); 1.2 A I_D; SOT-23 package	Lower voltage rating limits use in 24 V systems; better suited for 5 V logic-controlled 12 V loads	Select when gate drive is ≥ −4.5 V and system voltage ≤ 20 V; verify thermal margin on FR4 with reduced R_DS(on).
AO3415	R_DS(on) = 550 mΩ @ −4.5 V; −20 V V_DS; 4 A I_D; SOT-23 package	Higher current rating but same voltage class; larger die increases gate charge (Q_g = 4.2 nC vs. SSM3J112TU's ~2.5 nC)	Prefer for higher-current 5 V–12 V loads where faster switching is less critical than conduction loss reduction.

Compared with DMN2011UFG-7 and AO3415, the SSM3J112TU offers superior −30 V blocking capability and tighter V_th distribution for stable 3.3 V–4 V drive, making it optimal for space-constrained 24 V industrial interfaces where reliability at elevated ambient temperatures matters.

Availability

SSM3J112TU is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC synchronous buck high-side switches, and LED dimming drivers requiring stable component supply and long-term industrial availability.

Supply support for SSM3J112TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete power devices, analog ICs, and memory solutions with global automotive and industrial certifications.

The SSM3J series targets ultra-compact, low-voltage P-channel MOSFET applications where board space, gate drive simplicity, and thermal performance in thin-profile packages are critical design priorities.

FAQ

What is the maximum continuous drain current rating for SSM3J112TU?

The SSM3J112TU has a maximum continuous drain current (I_D) of −1.1 A at T_a = 25°C when mounted on an FR4 board with 645 mm² copper pad. This rating decreases with rising ambient temperature and must be derated per the PD–Ta curve in the datasheet; at 85°C, the practical limit drops to approximately −0.7 A.

Can SSM3J112TU be driven directly from a 3.3 V microcontroller GPIO?

Yes - the SSM3J112TU is specifically characterized for 4 V gate drive, and its V_th range (−0.8 to −1.8 V) ensures reliable turn-on with 3.3 V logic when referenced to a negative gate voltage (e.g., source at 3.3 V, gate at 0 V). However, R_DS(on) will be higher (~790 mΩ) than at −10 V, so conduction loss must be validated for the target load current.

What is the thermal resistance (R_thJA) of SSM3J112TU on FR4?

The SSM3J112TU has a junction-to-ambient thermal resistance (R_thJA) of 250°C/W when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm, 645 mm² Cu pad). This value rises significantly with smaller copper areas - e.g., to ~400°C/W with minimal 0.45 mm × 0.8 mm × 3 Cu traces - requiring layout verification for sustained >0.5 A operation.

Does SSM3J112TU support avalanche energy rating?

No - the SSM3J112TU datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS) ratings. It is not rated for repetitive or unclamped inductive load switching; external clamping (e.g., TVS diode or RCD snubber) is required in relay or solenoid drive applications to avoid catastrophic failure.

What is the gate charge (Q_g) specification for SSM3J112TU?

The SSM3J112TU does not publish a total gate charge (Q_g) value in its official datasheet. However, based on C_iss = 86 pF and typical gate threshold behavior, estimated Q_g is ~2.5 nC at V_GS = −10 V. For precise driver sizing, designers should refer to the dynamic input characteristic curves and use gate resistance (RG = 10 Ω) test conditions from the switching time section.

SSM3J112TU,LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 3-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 390mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 86 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 800mW (Ta)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: UFM

SSM3J112TU,LF FAQ

1.How can I place an order for SSM3J112TU,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM3J112TU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM3J112TU,LF reliable?

The price and inventory of SSM3J112TU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3J112TU,LF is usually 5 days.

3.What payment methods are accepted for SSM3J112TU,LF?

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SSM3J112TU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM3J112TU,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM3J112TU,LF?

For technical support, including SSM3J112TU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3J112TU,LF requirements.

6.How does Aetrix verify that SSM3J112TU,LF is sourced from the original manufacturer or authorized distributors?

All SSM3J112TU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3J112TU,LF meets industry standards.

7.What is the process for return or replacement of SSM3J112TU,LF?

All SSM3J112TU,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM3J112TU,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM3J112TU,LF part is unused and in its original packaging.

Return procedure for SSM3J112TU,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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