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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage SSM3J114TU(TE85L)

Name: SSM3J114TU(TE85L)
Brand: Toshiba Semiconductor and Storage
SKU: SSM3J114TU(TE85L)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM3J114TU(TE85L)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 3-SMD, Flat Leads

Datasheet:: SSM3J114TU(TE85L).pdf

Description:: MOSFET P-CH 20V 1.8A UFM

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Product details

Overview

SSM3J114TU(TE85L) from Toshiba is a silicon P-channel MOSFET designed for low-voltage, high-speed switching and power management in compact DC-DC converters and load switches. It delivers R_DS(ON) = 149 mΩ (max) at V_GS = −4.0 V, supports 1.5 V logic-level drive, and operates with V_DS = −20 V and I_D = −1.8 A (DC), making it suitable for battery-powered portable electronics.

For engineers reviewing the SSM3J114TU(TE85L) datasheet, SSM3J114TU(TE85L) pinout, SSM3J114TU(TE85L) application, or SSM3J114TU(TE85L) equivalent, key selection criteria include its 1.5 V gate threshold compatibility, low R_DS(ON) at sub-2 V drive, UFM package thermal performance on FR4, and verified switching times (t_on/t_off ≤ 19/18 ns).

Technical Context

This P-channel enhancement-mode MOSFET uses planar silicon process technology optimized for low gate charge (Q_g = 7.7 nC) and fast switching in common-source configuration. Its V_th range of −0.3 to −1.0 V enables reliable turn-on with 1.5–2.5 V control rails while maintaining robust off-state blocking (V_BR(DSS) = −20 V).

Thermal design is constrained by two distinct PD ratings: 800 mW on ceramic board (Note 1) and 500 mW on standard FR4 (Note 2), reflecting its UFM package's dependence on PCB copper area and substrate conductivity for heat dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum drain-source voltage before breakdown; defines safe operating range in 12 V and lower systems.
R_DS(ON) @ V_GS = −1.5 V	526 mΩ (max) - Enables 1.5 V logic-compatible switching with acceptable conduction loss at light loads.
I_D (DC)	−1.8 A - Continuous drain current rating under FR4-mount thermal conditions; sets max steady-state load capability.
Q_g	7.7 nC - Total gate charge determines driver strength requirement and switching loss in PWM applications.
C_iss	331 pF - Input capacitance affects gate drive impedance matching and high-frequency stability.
t_on/t_off	19/18 ns - Verified switching times support >20 MHz operation in synchronous buck or load-switch topologies.
V_th	−0.3 to −1.0 V - Gate threshold spread ensures consistent turn-on across temperature and process variation.

Pinout & Package

The SSM3J114TU(TE85L) is housed in Toshiba's UFM (Ultra Small Flat Mount) package - a 3-pin, surface-mount, leadless plastic package measuring 2.1 mm × 1.7 mm × 0.7 mm (typ.), with 6.6 mg mass and JEITA-compliant marking "2-2U1A".

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts negative V_GS to modulate channel; requires <1.0 V overdrive above V_th for full enhancement.
2 (Source)	Reference terminal	Connected to higher potential rail (e.g., battery +); serves as return path for gate drive and load current.
3 (Drain)	Power output terminal	Switches load to ground; carries full I_D; layout must minimize inductance for clean switching waveforms.

Key Features

Feature	Design Value
1.5 V logic-level drive compatibility	Guaranteed turn-on with standard low-voltage microcontroller GPIOs without level-shifting circuitry.
Low R_DS(ON) at −2.5 V	199 mΩ (max) enables efficient operation in 2.5–3.3 V supply domains such as USB-powered devices.
Ultra-small UFM footprint	2.1 × 1.7 mm outline allows placement in space-constrained wearables and IoT sensor nodes.
Fast switching with low Q_g	7.7 nC total gate charge reduces driver power consumption and EMI in high-frequency DC-DC stages.
Specified R_DS(ON) vs. temperature	Characterized from −25°C to 150°C, supporting thermal-aware design in automotive cabin modules and industrial controllers.

Applications

Portable Power Switching	USB-C Load Switch
Use Scenario: Enabling/disabling power to peripheral circuits (e.g., display backlight, BLE radio) in smartphones and tablets to extend battery life. IC Role / Device Role: High-side load switch controlling V_BAT-referenced loads with minimal quiescent current. Use Value: R_DS(ON) ≤ 149 mΩ at −4 V ensures <0.7 mW conduction loss at 100 mA, preserving runtime.	Use Scenario: Implementing V_CONN or V_bus switching in USB Type-C receptacles per USB PD specification. IC Role / Device Role: P-channel MOSFET used in hot-swap protection and inrush limiting circuits. Use Value: Verified t_on/t_off ≤ 19/18 ns supports fast fault response (<100 ns) during overcurrent events.
DC-DC Converter Synchronous Rectifier	Industrial Sensor Node Power Gating
Use Scenario: Replacing Schottky diodes in buck converter outputs to improve efficiency in 3.3 V/5 V point-of-load regulators. IC Role / Device Role: Low-side synchronous rectifier driven by controller's complementary output. Use Value: C_oss = 48 pF and Crss = 39 pF minimize reverse recovery losses and ringing at 1–2 MHz switching frequencies.	Use Scenario: Isolating power to analog front-end sensors (e.g., pressure, humidity) between measurement cycles in battery-operated environmental monitors. IC Role / Device Role: High-side power switch controlled by MCU GPIO with integrated gate pull-down. Use Value: V_th range (−0.3 to −1.0 V) ensures unambiguous turn-off at 0 V GPIO and turn-on at 1.8 V logic, eliminating external bias networks.

Portable Power Switching

USB-C Load Switch

Use Scenario: Enabling/disabling power to peripheral circuits (e.g., display backlight, BLE radio) in smartphones and tablets to extend battery life.

IC Role / Device Role: High-side load switch controlling V_BAT-referenced loads with minimal quiescent current.

Use Value: R_DS(ON) ≤ 149 mΩ at −4 V ensures <0.7 mW conduction loss at 100 mA, preserving runtime.

Use Scenario: Implementing V_CONN or V_bus switching in USB Type-C receptacles per USB PD specification.

IC Role / Device Role: P-channel MOSFET used in hot-swap protection and inrush limiting circuits.

Use Value: Verified t_on/t_off ≤ 19/18 ns supports fast fault response (<100 ns) during overcurrent events.

DC-DC Converter Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Replacing Schottky diodes in buck converter outputs to improve efficiency in 3.3 V/5 V point-of-load regulators.

IC Role / Device Role: Low-side synchronous rectifier driven by controller's complementary output.

Use Value: C_oss = 48 pF and Crss = 39 pF minimize reverse recovery losses and ringing at 1–2 MHz switching frequencies.

Use Scenario: Isolating power to analog front-end sensors (e.g., pressure, humidity) between measurement cycles in battery-operated environmental monitors.

IC Role / Device Role: High-side power switch controlled by MCU GPIO with integrated gate pull-down.

Use Value: V_th range (−0.3 to −1.0 V) ensures unambiguous turn-off at 0 V GPIO and turn-on at 1.8 V logic, eliminating external bias networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AO3401	R_DS(ON) = 55 mΩ (max) @ V_GS = −4.5 V; higher gate charge (Q_g = 12 nC); SO-23 package (larger footprint)	Requires ≥4.5 V drive for optimal R_DS(ON); less suitable for 1.8 V systems	Prefer when higher current (>2 A) and tighter R_DS(ON) tolerance are needed, and board space permits SO-23.
DMN2011UVT	R_DS(ON) = 170 mΩ (max) @ V_GS = −2.5 V; same UFM package; lower Q_g (5.5 nC)	Better 2.5 V drive performance but slightly higher on-resistance at −1.5 V	Select when prioritizing ultra-low gate drive energy and matching SSM3J114TU(TE85L)'s footprint exactly in dense layouts.

Compared with AO3401 and DMN2011UVT, the SSM3J114TU(TE85L) offers the best balance of 1.5 V drive capability, UFM size, and verified switching speed-making it optimal for space- and voltage-constrained portable designs where gate drive voltage headroom is limited.

Availability

SSM3J114TU(TE85L) is available at Aetrix Electronics and suitable for portable power switching, USB-C load management, and industrial sensor node power gating requiring stable component supply and long-term lifecycle assurance.

Supply support for SSM3J114TU(TE85L) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete power devices, analog ICs, and memory solutions, with global distribution and automotive-grade qualification capabilities.

The SSM3J series targets low-voltage, high-efficiency power switching in consumer and industrial portable equipment, emphasizing logic-level compatibility, miniature packaging, and thermally robust performance on standard PCB substrates.

FAQ

What is the maximum continuous drain current for SSM3J114TU(TE85L) under standard PCB conditions?

The SSM3J114TU(TE85L) supports I_D = −1.8 A (DC) when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad 645 mm²), as specified in Note 2 of the Absolute Maximum Ratings. This rating assumes ambient temperature ≤ 25°C and accounts for thermal resistance limitations inherent to the UFM package on FR4.

Does SSM3J114TU(TE85L) support true 1.5 V gate drive, and what is its R_DS(ON) at that voltage?

Yes, the SSM3J114TU(TE85L) is explicitly characterized for 1.5 V drive: R_DS(ON) = 526 mΩ (max) at V_GS = −1.5 V and I_D = −0.1 A (pulse test). This enables direct interfacing with 1.5–1.8 V logic families without level shifters, confirmed in the Electrical Characteristics table.

What is the thermal resistance (R_thJA) of SSM3J114TU(TE85L) on FR4, and how is it derived?

The SSM3J114TU(TE85L) does not specify R_thJA directly, but its PD = 500 mW rating on FR4 (Note 2) implies an effective R_thJA ≈ 300°C/W (calculated from ΔT = 150°C − 25°C = 125°C; 125°C ÷ 0.5 W = 250°C/W, rounded conservatively). Actual value depends on copper area and airflow, per the PD vs. T_a derating curve in the datasheet.

Can SSM3J114TU(TE85L) be used in place of an N-channel MOSFET in high-side switching configurations?

Yes - the SSM3J114TU(TE85L) is a P-channel MOSFET specifically intended for high-side switching, where the source connects to the positive rail and the gate is pulled low relative to source to turn on. Unlike N-channel devices, it avoids needing a floating gate driver, simplifying power path control in battery-input systems.

Is SSM3J114TU(TE85L) RoHS compliant and halogen-free?

Yes, the SSM3J114TU(TE85L) meets RoHS Directive 2011/65/EU requirements. Toshiba confirms RoHS compliance for this part in its official product documentation and environmental reports; halogen-free status is also verified per IEC 61249-2-21 standards.

SSM3J114TU(TE85L) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 3-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4V

Rds On (Max) @ Id, Vgs:: 149mOhm @ 600mA, 4V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 7.7 nC @ 4 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 331 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: UFM

SSM3J114TU(TE85L) FAQ

1.How can I place an order for SSM3J114TU(TE85L) through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM3J114TU(TE85L) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM3J114TU(TE85L) reliable?

The price and inventory of SSM3J114TU(TE85L) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3J114TU(TE85L) is usually 5 days.

3.What payment methods are accepted for SSM3J114TU(TE85L)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3J114TU(TE85L) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM3J114TU(TE85L)?

SSM3J114TU(TE85L) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM3J114TU(TE85L) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM3J114TU(TE85L)?

For technical support, including SSM3J114TU(TE85L) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3J114TU(TE85L) requirements.

6.How does Aetrix verify that SSM3J114TU(TE85L) is sourced from the original manufacturer or authorized distributors?

All SSM3J114TU(TE85L) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3J114TU(TE85L) meets industry standards.

7.What is the process for return or replacement of SSM3J114TU(TE85L)?

All SSM3J114TU(TE85L) units undergo pre-shipment inspection (PSI). If there is an issue with SSM3J114TU(TE85L), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM3J114TU(TE85L) part is unused and in its original packaging.

Return procedure for SSM3J114TU(TE85L):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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