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Toshiba Semiconductor and Storage SSM3J120TU,LF

Name: SSM3J120TU,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM3J120TU,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM3J120TU,LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 3-SMD, Flat Leads

Datasheet:: SSM3J120TU,LF.pdf

Description:: MOSFET P-CH 20V 4A UFM

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Product details

Overview

SSM3J120TU,LF from Toshiba is a silicon P-channel MOSFET designed for low-voltage power management and high-current switching applications. It features 140 mΩ max R_DS(ON) at V_GS = −1.5 V, −20 V V_DS rating, 4.0 A DC drain current, and UFM (Ultra Small Flat) package with 3-pin SOT-323FL footprint. It enables compact load switching in battery-powered portable electronics.

For engineers reviewing the SSM3J120TU,LF datasheet, SSM3J120TU,LF pinout, SSM3J120TU,LF application, or SSM3J120TU,LF equivalent, key selection criteria include its 1.5 V logic-level gate drive capability, temperature-stable R_DS(ON)

Technical Context

This P-channel enhancement-mode MOSFET operates as a high-side load switch with gate threshold voltage (V_th) between −0.3 V and −1.0 V, enabling reliable turn-on from low-voltage microcontrollers. Its forward transfer admittance |Y_fs| reaches 47 S (typ.) at V_GS = −1.8 V and I_D = −1.0 A, supporting fast switching transitions.

Designed for pulsed operation with t_on = 67 ns and t_off = 92 ns (V_DD = −10 V, R_G = 4.7 Ω), it integrates low Crss (169 pF typ.) and Q_gd = 7.3 nC to minimize Miller-induced switching losses in synchronous buck and OR-ing circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - supports input rails up to 18 V with 2 V safety margin
R_DS(ON) max	140 mΩ @ V_GS = −1.5 V - enables ≥1 A load switching with <150 mV drop at 1.5 V logic drive
I_D (DC)	−4.0 A - sufficient for USB 3.0 hot-swap, LED backlight, and PMIC enable paths
Q_g	22.3 nC - compatible with standard GPIO-driven gate drivers without external buffering
C_iss	1484 pF - ensures stable gate control under 1–10 MHz PWM frequencies
T_ch max	150 °C - allows operation in sealed enclosures with limited airflow

Pinout & Package

The SSM3J120TU,LF uses the UFM (SOT-323FL) package: 1.7 mm × 2.1 mm × 0.7 mm, 3-terminal surface-mount, JEITA-compliant marking "2-2U1A", weight 6.6 mg (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts −1.5 V to −8 V logic-level signals; requires no level-shifting for 1.8 V/3.3 V MCU outputs
2 (Source)	Reference node	Connected to higher-potential rail (e.g., battery +); defines V_GS reference for high-side switching
3 (Drain)	Load connection	Delivers switched current to downstream circuitry; layout must minimize trace inductance for clean turn-off

Key Features

Feature	Design Value
1.5 V gate drive compatibility	Enables direct interface with ultra-low-voltage MCUs (e.g., ARM Cortex-M0+ at 1.8 V IO) without gate driver ICs
Low R_DS(ON) vs. temperature	R_DS(ON) increases only ~25% from 25°C to 85°C at V_GS = −1.5 V, ensuring predictable conduction loss in thermal-limited spaces
Ultra-small UFM package	0.7 mm height and 3.57 mm² footprint reduce PCB area by >40% vs. standard SOT-23, critical for wearables and TWS earbuds
Low Crss / Q_gd ratio	Crss = 169 pF and Q_gd = 7.3 nC suppress shoot-through risk in synchronous rectifier and OR-ing configurations

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Preventing reverse current flow and over-discharge in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as back-to-back switch with integrated protection IC. Use Value: 140 mΩ R_DS(ON) at −1.5 V gate drive minimizes voltage drop across protection path, preserving usable battery capacity.	Use Scenario: Enabling/disabling VBUS power delivery on USB Type-A/C ports in host devices. IC Role / Device Role / Timing Role: Load switch controlling 5 V rail to peripheral; driven by USB controller GPIO. Use Value: 67 ns turn-on time ensures compliance with USB 2.0 enumeration timing; low Q_g avoids excessive GPIO loading.
LED Backlight Driver	PMIC Enable Path
Use Scenario: PWM-controlled current source for white LED strings in compact displays. IC Role / Device Role / Timing Role: High-side switch modulating LED anode supply; synchronized to PWM dimming signal. Use Value: Low C_iss (1484 pF) and fast t_off (92 ns) support 10–20 kHz dimming without audible noise or duty-cycle distortion.	Use Scenario: Sequencing power-up of multi-rail PMIC outputs in SoC-based embedded systems. IC Role / Device Role / Timing Role: Controlled enable switch for auxiliary LDO or DC-DC converter output. Use Value: −20 V V_DS rating provides margin against inductive kickback during sequencing; 4.0 A rating covers peak inrush of downstream regulators.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Preventing reverse current flow and over-discharge in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as back-to-back switch with integrated protection IC.

Use Value: 140 mΩ R_DS(ON) at −1.5 V gate drive minimizes voltage drop across protection path, preserving usable battery capacity.

Use Scenario: Enabling/disabling VBUS power delivery on USB Type-A/C ports in host devices.

IC Role / Device Role / Timing Role: Load switch controlling 5 V rail to peripheral; driven by USB controller GPIO.

Use Value: 67 ns turn-on time ensures compliance with USB 2.0 enumeration timing; low Q_g avoids excessive GPIO loading.

LED Backlight Driver

PMIC Enable Path

Use Scenario: PWM-controlled current source for white LED strings in compact displays.

IC Role / Device Role / Timing Role: High-side switch modulating LED anode supply; synchronized to PWM dimming signal.

Use Value: Low C_iss (1484 pF) and fast t_off (92 ns) support 10–20 kHz dimming without audible noise or duty-cycle distortion.

Use Scenario: Sequencing power-up of multi-rail PMIC outputs in SoC-based embedded systems.

IC Role / Device Role / Timing Role: Controlled enable switch for auxiliary LDO or DC-DC converter output.

Use Value: −20 V V_DS rating provides margin against inductive kickback during sequencing; 4.0 A rating covers peak inrush of downstream regulators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011UFD-7	R_DS(ON) = 120 mΩ @ V_GS = −1.5 V; SOT-23 package (larger footprint, 1.3 mm height)	Higher thermal resistance on FR4; less suitable for ultra-thin form factors	Prefer when board real estate permits larger package and lower R_DS(ON) is prioritized over height
AO3401	R_DS(ON) = 135 mΩ @ V_GS = −1.8 V; SO-23 package; Q_g = 25 nC (higher than SSM3J120TU,LF)	Slower switching due to higher Q_g; may require stronger gate drive for same PWM frequency	Choose when cost sensitivity outweighs switching speed and height constraints

Compared with DMN2011UFD-7 and AO3401, the SSM3J120TU,LF delivers optimal balance of ultra-low profile (0.7 mm), 1.5 V drive compatibility, and controlled Q_gd/Crss for noise-sensitive portable power rails - making it preferred for next-gen compact battery-powered systems where board thickness and GPIO drive strength are limiting factors.

Availability

SSM3J120TU,LF is available at Aetrix Electronics and suitable for battery protection circuits, USB port power switches, LED backlight drivers, and PMIC enable paths requiring stable component supply and long-term industrial availability.

Supply support for SSM3J120TU,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power management, analog, and discrete components for consumer, industrial, and automotive markets.

The SSM3J120TU,LF belongs to Toshiba's UFM-series logic-level P-channel MOSFET product line, engineered specifically for space-constrained, low-voltage load switching in portable electronics and energy-efficient power subsystems.

FAQ

What is the maximum continuous drain current for the SSM3J120TU,LF at 25°C ambient?

The SSM3J120TU,LF has a DC drain current rating of −4.0 A at T_a = 25°C when mounted on a ceramic board (Note 1). On standard FR4, derating applies: PD is limited to 500 mW, reducing practical continuous current to approximately −2.5 A depending on copper area and airflow. Always verify thermal performance using the transient thermal impedance curves in the SSM3J120TU,LF datasheet.

Does the SSM3J120TU,LF support 1.8 V GPIO drive without external level shifting?

Yes - the SSM3J120TU,LF is fully characterized down to V_GS = −1.5 V, with R_DS(ON) = 140 mΩ (max) at that voltage. At −1.8 V, R_DS(ON) drops to 78 mΩ (max), making it directly compatible with 1.8 V microcontroller outputs. No level shifter is required, simplifying design and reducing BOM count for the SSM3J120TU,LF.

What is the gate threshold voltage range for the SSM3J120TU,LF?

The gate threshold voltage (V_th) for the SSM3J120TU,LF is specified as −0.3 V (min) to −1.0 V (max) at V_DS = −3 V and I_D = −1 mA. This wide V_th distribution means system designers must ensure gate drive remains below −1.0 V for guaranteed turn-off and above −1.5 V for robust turn-on - a key consideration in low-noise biasing of the SSM3J120TU,LF.

Can the SSM3J120TU,LF be used in synchronous rectification applications?

The SSM3J120TU,LF is not optimized for synchronous rectification due to its relatively high Q_gd/Q_g ratio and lack of body diode reverse recovery characterization. While functional in low-frequency (<100 kHz) flyback secondary-side switching, its 169 pF Crss and absence of t_rr data make it less suitable than dedicated synchronous rectifier MOSFETs. For such use cases, consult the full switching loss analysis in the SSM3J120TU,LF application notes.

Is the SSM3J120TU,LF RoHS compliant and halogen-free?

Yes - the SSM3J120TU,LF meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per JESD209-4. Toshiba confirms compliance in its official environmental documentation, and the part carries the "LF" suffix denoting lead-free and halogen-free construction. Full material declarations and test reports for the SSM3J120TU,LF are available upon request from authorized distributors.

SSM3J120TU,LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIV

Package/Case:: 3-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 3A, 4V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 22.3 nC @ 4 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1484 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: UFM

SSM3J120TU,LF FAQ

1.How can I place an order for SSM3J120TU,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM3J120TU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM3J120TU,LF reliable?

The price and inventory of SSM3J120TU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3J120TU,LF is usually 5 days.

3.What payment methods are accepted for SSM3J120TU,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3J120TU,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM3J120TU,LF?

SSM3J120TU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM3J120TU,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM3J120TU,LF?

For technical support, including SSM3J120TU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3J120TU,LF requirements.

6.How does Aetrix verify that SSM3J120TU,LF is sourced from the original manufacturer or authorized distributors?

All SSM3J120TU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3J120TU,LF meets industry standards.

7.What is the process for return or replacement of SSM3J120TU,LF?

All SSM3J120TU,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM3J120TU,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM3J120TU,LF part is unused and in its original packaging.

Return procedure for SSM3J120TU,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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