Toshiba Semiconductor and Storage SSM3J140TU,LXHF
- Part No.:
- SSM3J140TU,LXHF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 3-SMD, Flat Leads
- Datasheet:
-
SSM3J140TU,LXHF.pdf
- Description:
- SMOS P-CH VDSS:-20V VGSS:-8/+6V
- Quantity:
- Payment:

- Shipping:

Inventory:5,613
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SSM3J140TU,LXHF from Toshiba Electronic Devices & Storage Corporation is a silicon P-channel MOSFET in UFM package, designed for low-voltage power management switches. It delivers RDS(ON) = 25.8 mΩ (max) at VGS = −4.5 V, supports −4.4 A DC drain current, and operates with 1.5-V gate drive capability-enabling efficient load switching in space-constrained automotive and industrial control modules.
For engineers reviewing the SSM3J140TU,LXHF datasheet, SSM3J140TU,LXHF pinout, SSM3J140TU,LXHF application, or SSM3J140TU,LXHF equivalent, key selection criteria include its AEC-Q101 qualification, −20 V VDSS, low-threshold gate drive compatibility, and thermal performance on FR4 boards with 645 mm² copper pad.
Technical Context
This P-channel enhancement-mode MOSFET uses Toshiba's U-MOS process to achieve low RDS(ON) across low gate voltages (−1.5 V to −4.5 V), supporting direct interface with 1.8-V and 3.3-V logic controllers. Its gate threshold voltage (Vth) ranges from −0.3 V (min) to −1.0 V (max), ensuring reliable turn-on under weak-drive conditions while maintaining robust off-state blocking up to −20 V.
The device features integrated body diode with VDSF = 0.83 V (typ.) at 4.4 A, and exhibits Ciss = 1800 pF (typ.), Coss = 205 pF (typ.), enabling predictable switching behavior in high-frequency load-switching applications with controlled dV/dt and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Supports rail-to-rail operation in 12-V automotive and 5-V industrial systems without breakdown risk. |
| RDS(ON) @ VGS = −4.5 V | 25.8 mΩ (max) - Enables ≤115 mW conduction loss at 4.4 A, reducing thermal stress on small PCBs. |
| ID (DC) | −4.4 A - Rated continuous current for sustained load switching in power rails and battery protection circuits. |
| Vth | −0.3 to −1.0 V - Ensures turn-on with 1.5-V logic-level signals, eliminating need for level shifters in ultra-low-voltage control. |
| PD (FR4, 645 mm²) | 500 mW - Specifies maximum steady-state power dissipation on standard PCB layout per Toshiba test condition. |
| Ciss | 1800 pF (typ.) - Determines gate drive strength requirement; compatible with low-current GPIO or buffer drivers. |
| VGS Range | −8/+6 V - Allows safe gate biasing with common supply rails and protects against overvoltage transients. |
Pinout & Package
SSM3J140TU,LXHF is housed in the UFM (Ultra Small Flat Mount) package-a 3-pin, surface-mount, leadless plastic package measuring 2.0 × 2.1 × 0.9 mm (typ.), weighing 6.6 mg, optimized for high-density automotive and portable electronics layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal accepting negative VGS; requires no external pull-up for high-side switch default-off behavior. |
| 2 | Source (S) | Reference node for gate drive; connected to positive rail in high-side configuration or ground in low-side. |
| 3 | Drain (D) | Current output path; electrically isolated from package backside, suitable for thermal pad attachment if needed. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22-A114. |
| 1.5-V gate drive support | Guarantees turn-on with sub-2-V logic outputs, enabling direct interface with modern ultra-low-power MCUs. |
| Low RDS(ON) at low VGS | 41.1 mΩ (max) at −1.8 V enables <200 mW loss at 2.2 A-critical for thermally constrained modules. |
| Integrated body diode | VDSF = 0.83 V (typ.) at 4.4 A supports freewheeling in inductive load switching without external diode. |
| ESD-sensitive handling | Class 1C (≥1000 V HBM) per JESD22-A114-requires anti-static workstations and grounded tools during assembly. |
Applications
| Automotive Door Module Power Switch | Industrial PLC Output Stage |
|---|---|
Use Scenario: Controlling window lift motors and mirror actuators in 12-V vehicle door modules. IC Role / Device Role / Timing Role: High-side load switch managing bidirectional current flow with reverse-polarity protection. Use Value: AEC-Q101 rating ensures compliance with automotive environmental stress requirements; 1.5-V gate drive allows direct MCU GPIO control without level-shifting circuitry. | Use Scenario: Driving solenoids and indicator LEDs in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Low-side or high-side discrete power switch interfacing with 3.3-V FPGA I/O banks. Use Value: 25.8 mΩ RDS(ON) minimizes self-heating during continuous 4-A actuator duty cycles; UFM footprint saves >60% board area vs. SOP-8 alternatives. |
| USB-C Power Delivery Load Switch | Medical Portable Device Battery Protection |
Use Scenario: Enabling/disabling VBUS paths in compact USB-C PD sink adapters with tight thermal budgets. IC Role / Device Role / Timing Role: Fast-turning P-channel switch responding to PD controller fault signals within microseconds. Use Value: 25 ns typical turn-on time and 133 ns turn-off time support dynamic load management; low Ciss reduces gate drive power overhead. | Use Scenario: Isolating Li-ion battery packs from charging circuits and system loads in handheld diagnostic equipment. IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between battery and system PMIC input. Use Value: −20 V VDSS withstands battery overvoltage events; integrated body diode prevents latch-up during hot-plug insertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFG-7 | RDS(ON) = 28 mΩ (max) @ −4.5 V; VDSS = −20 V; SOT-23 package; not AEC-Q101 qualified. | Suitable for commercial-grade portable electronics but lacks automotive qualification and thermal derating data. | Select when cost sensitivity outweighs automotive compliance and board space permits larger SOT-23 footprint. |
| AO3415 | RDS(ON) = 42 mΩ (max) @ −4.5 V; VDSS = −20 V; SOT-23; AEC-Q101 qualified only in specific tape-and-reel variants. | Higher conduction loss limits use to ≤2.5 A continuous loads; less stable Vth drift over temperature than SSM3J140TU,LXHF. | Prefer for legacy designs where pinout compatibility with existing SOT-23 layouts is mandatory and lower current is acceptable. |
Compared with DMN2011UFG-7 and AO3415, SSM3J140TU,LXHF offers superior low-VGS performance (63.2 mΩ @ −1.5 V), tighter Vth distribution, and full AEC-Q101 validation-making it the optimal choice for new automotive and high-reliability industrial designs requiring minimal gate drive voltage and guaranteed qualification status.
Availability
SSM3J140TU,LXHF is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC output stages, and USB-C power delivery load switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SSM3J140TU,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and consumer reliability standards.
The SSM3J140TU,LXHF belongs to Toshiba's U-MOS P-channel MOSFET product line, engineered specifically for low-voltage, high-efficiency load switching in space-constrained and thermally sensitive applications.
FAQ
What is the gate threshold voltage range for SSM3J140TU,LXHF?
The SSM3J140TU,LXHF has a gate threshold voltage (Vth) ranging from −0.3 V (minimum) to −1.0 V (maximum) at ID = −1 mA. This low-threshold characteristic enables reliable turn-on with 1.5-V logic-level gate drive, making the SSM3J140TU,LXHF especially suitable for direct interface with ultra-low-voltage microcontrollers and battery-powered systems where minimizing gate drive overhead is critical.
Is SSM3J140TU,LXHF qualified for automotive applications?
Yes, SSM3J140TU,LXHF is AEC-Q101 qualified, confirming its suitability for automotive electronic systems. The qualification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling, and electrostatic discharge (ESD) per JESD22-A114. This makes the SSM3J140TU,LXHF appropriate for use in automotive door modules, body control units, and other non-safety-critical vehicle subsystems where robustness under thermal and electrical stress is required.
What is the maximum continuous drain current for SSM3J140TU,LXHF?
The SSM3J140TU,LXHF supports a maximum continuous drain current (ID) of −4.4 A at Ta = 25 °C, measured under standard FR4 board conditions (25.4 mm × 25.4 mm × 1.6 mm with 645 mm² copper pad). Derating is required above 25 °C ambient; the device's channel temperature must not exceed 150 °C. For sustained operation near rated current, thermal design using the specified PCB layout is essential to maintain reliability.
Does SSM3J140TU,LXHF include an integrated body diode?
Yes, SSM3J140TU,LXHF includes a monolithically integrated body diode with forward voltage (VDSF) of 0.83 V (typical) at ID = 4.4 A and VGS = 0 V. This diode supports freewheeling current in inductive load applications such as solenoid drivers and motor controls, eliminating the need for an external flyback diode in many designs and simplifying bill-of-materials for compact power switches.
What package type does SSM3J140TU,LXHF use, and what are its dimensions?
SSM3J140TU,LXHF uses the UFM (Ultra Small Flat Mount) package-a 3-pin, leadless, surface-mount plastic package measuring 2.0 mm × 2.1 mm × 0.9 mm (typical) with a weight of 6.6 mg. Its compact size and low profile make the SSM3J140TU,LXHF ideal for high-density PCB layouts in automotive ECUs, wearables, and portable medical devices where board space and height constraints are critical.
SSM3J140TU,LXHF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVI
- Package/Case:
- 3-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 25.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 24.8 nC @ 4.5 V
- Vgs (Max):
- +6V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UFM
SSM3J140TU,LXHF FAQ
1.How can I place an order for SSM3J140TU,LXHF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM3J140TU,LXHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM3J140TU,LXHF reliable?
The price and inventory of SSM3J140TU,LXHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3J140TU,LXHF is usually 5 days.
3.What payment methods are accepted for SSM3J140TU,LXHF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3J140TU,LXHF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM3J140TU,LXHF?
SSM3J140TU,LXHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM3J140TU,LXHF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM3J140TU,LXHF?
For technical support, including SSM3J140TU,LXHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3J140TU,LXHF requirements.
6.How does Aetrix verify that SSM3J140TU,LXHF is sourced from the original manufacturer or authorized distributors?
All SSM3J140TU,LXHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3J140TU,LXHF meets industry standards.
7.What is the process for return or replacement of SSM3J140TU,LXHF?
All SSM3J140TU,LXHF units undergo pre-shipment inspection (PSI). If there is an issue with SSM3J140TU,LXHF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM3J140TU,LXHF part is unused and in its original packaging.
Return procedure for SSM3J140TU,LXHF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SSM3J140TU,LXHF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

