My Inquiry
My Account
Toshiba Semiconductor and Storage SSM3J145TU,LF
- Part No.:
- SSM3J145TU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 3-SMD, Flat Leads
- Datasheet:
-
SSM3J145TU,LF.pdf
- Description:
- MOSFET P-CH 20V 3A UFM
- Quantity:
- Payment:
- Shipping:
Inventory:9,968
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SSM3J145TU,LF from Toshiba Electronic Devices & Storage Corporation is a silicon P-channel enhancement-mode MOSFET in UFM package, rated for -20 V VDSS, -3.0 A ID (DC), and 103 mΩ RDS(ON) at VGS = -4.5 V. It serves as a low-voltage power management switch in compact DC-DC converters and load switching circuits.
For engineers reviewing the SSM3J145TU,LF datasheet, SSM3J145TU,LF pinout, SSM3J145TU,LF application, or SSM3J145TU,LF equivalent, key selection criteria include its AEC-Q101 qualification, 1.5-V gate drive capability, low RDS(ON) across multiple VGS levels, thermal performance on FR4, and UFM footprint compatibility with space-constrained PCB layouts.
Technical Context
This P-channel MOSFET uses Toshiba's U-MOS process to achieve enhanced channel conductivity and reduced gate charge (Qg = 4.6 nC typ). Its gate threshold voltage (Vth = -0.3 to -1.0 V) enables reliable turn-on with logic-level control down to -1.5 V, supporting direct interface with 1.8-V and 2.5-V microcontrollers.
The device features integrated body diode with VDSF = 0.91–1.2 V at 3.0 A, and dynamic parameters including Ciss = 270 pF, Coss = 40 pF, and ton/toff = 17/43 ns under specified test conditions-enabling efficient high-frequency switching in synchronous buck topologies and reverse-polarity protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20 V - supports input rails up to 18 V with margin for transients in automotive and industrial 12-V systems |
| RDS(ON) @ VGS = -4.5 V | 103 mΩ max - limits conduction loss to ≤1.06 W at 3.2 A, enabling thermally stable operation on standard FR4 |
| ID (DC) | -3.0 A - sufficient for medium-current load switches (e.g., USB port power control, sensor biasing) |
| Qg | 4.6 nC typ - reduces gate drive power and enables fast switching with low-RGS drivers |
| Vth | -0.3 to -1.0 V - ensures robust turn-on with 1.5-V logic signals while avoiding unintended conduction near 0 V |
| Ciss | 270 pF typ - balances switching speed and EMI in sub-MHz power stages |
| Tch max | 150 °C - defines maximum junction temperature for derating calculations in sealed enclosures |
Pinout & Package
SSM3J145TU,LF is housed in Toshiba's UFM (Ultra Small Flat Mount) package: 1.2 × 1.2 × 0.4 mm, 6.6 mg weight, surface-mount, lead-free, RoHS-compliant. The package has three terminals with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts negative gate-source voltage; requires ESD-safe handling due to ±1 µA IGSS leakage limit |
| 2 (Source) | Reference node for gate drive | Connected to system ground or higher potential rail; defines VGS polarity for P-channel operation |
| 3 (Drain) | Power output terminal | Exposed metal pad enhances thermal transfer to PCB copper; carries full load current and body diode reverse recovery path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability per stress test requirements, including HTRB, HTGB, and TC1000 cycles |
| 1.5-V gate drive support | Enables direct interface with low-voltage MCUs without level-shifting, reducing BOM count and layout complexity |
| Low RDS(ON) at low VGS | 260 mΩ max at -1.5 V allows usable on-resistance in battery-powered systems where supply voltage drops below 2 V |
| Integrated body diode | VDSF = 0.91 V typ at 3.0 A supports reverse-polarity protection and freewheeling in half-bridge configurations |
| UFM package footprint | 1.2 × 1.2 mm outline fits high-density layouts; compatible with standard 0402 reflow profiles and AOI inspection |
Applications
| USB Power Switching | Automotive Body Control Module |
|---|---|
Use Scenario: Selective power enable/disable for USB peripherals in portable medical devices and industrial handhelds. IC Role / Device Role / Timing Role: High-side load switch controlling 5-V rail delivery with fast turn-on/off and minimal voltage drop. Use Value: 103 mΩ RDS(ON) limits dropout to <40 mV at 400 mA, preserving bus voltage compliance while supporting hot-plug detection. | Use Scenario: Reverse-battery protection and controlled power gating for interior lighting and mirror actuators in 12-V vehicle subsystems. IC Role / Device Role / Timing Role: P-channel high-side switch with AEC-Q101 qualification ensuring functional safety in non-safety-critical loads. Use Value: -20 V VDSS withstands load-dump transients up to ISO 7637-2 Pulse 5a, and -1.5 V VGS turn-on enables seamless integration with LIN/UART-controlled MCU GPIOs. |
| IoT Sensor Node Power Management | Compact DC-DC Converter Sync Rectifier |
Use Scenario: Low-quiescent-power wake-up switching for environmental sensors powered by coin cells or energy harvesters. IC Role / Device Role / Timing Role: Ultra-low-leakage (±1 µA IGSS) power gate enabling multi-year battery life in sleep mode. Use Value: Gate leakage <1 µA minimizes standby current draw, extending shelf life and operational duration without compromising turn-on responsiveness. | Use Scenario: Secondary-side synchronous rectification in isolated flyback converters for smart home hubs and PoE-powered endpoints. IC Role / Device Role / Timing Role: Fast-switching (ton/toff = 17/43 ns) P-channel rectifier replacing Schottky diodes to improve efficiency above 85%. Use Value: Qgd = 0.9 nC and Coss = 40 pF reduce switching losses and ringing, enabling stable operation at 300–500 kHz without snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFG-7 | RDS(ON) = 110 mΩ @ -4.5 V; SO-8FL package (3×3 mm); higher thermal mass but larger footprint | Preferred for higher-current designs (>4 A) requiring better heat spreading; not suitable for ultra-dense layouts | Select when board area permits larger package and higher continuous current is needed beyond 3 A |
| AO3415 | RDS(ON) = 50 mΩ @ -4.5 V; SOT-23 package; no AEC-Q101 qualification; VDSS = -20 V same | Used in cost-sensitive consumer electronics; unsuitable for automotive environments requiring stress-tested reliability | Choose for non-automotive applications where lower RDS(ON) outweighs qualification requirements and footprint is acceptable |
Compared with DMN2011UFG-7 and AO3415, the SSM3J145TU,LF uniquely combines AEC-Q101 qualification, UFM's 1.2-mm footprint, and verified 1.5-V gate drive capability-making it optimal for space-constrained automotive and portable industrial modules where gate drive voltage headroom is limited.
Availability
SSM3J145TU,LF is available at Aetrix Electronics and suitable for USB power switching, automotive body control modules, and IoT sensor node power management requiring stable component supply and long-term lifecycle assurance.
Supply support for SSM3J145TU,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, miniaturization, and automotive-grade validation.
The SSM3J145TU,LF belongs to Toshiba's U-MOS P-channel MOSFET product line, engineered specifically for low-voltage, high-efficiency power switching in space-constrained and automotive-qualified applications.
FAQ
What is the maximum continuous drain current rating for SSM3J145TU,LF?
The SSM3J145TU,LF is rated for -3.0 A DC drain current at Ta = 25 °C on a standard FR4 board (25.4 × 25.4 × 1.6 mm, 645 mm² Cu pad). Derating is required above 25 °C ambient; the device reaches its absolute maximum channel temperature of 150 °C at approximately -1.8 A at 85 °C ambient. Always verify thermal design using the provided Rth(ch-a) curves and actual board layout.
Is SSM3J145TU,LF qualified for automotive applications?
Yes, the SSM3J145TU,LF is AEC-Q101 qualified, meaning it has passed stress tests including high-temperature reverse bias, high-temperature gate bias, temperature cycling, and humidity testing per the AEC-Q101 standard. This qualification applies specifically to the SSM3J145TU,LF orderable part number and supports use in automotive body electronics, infotainment power rails, and other non-safety-critical vehicle subsystems.
What is the gate threshold voltage range for SSM3J145TU,LF?
The gate threshold voltage (Vth) for SSM3J145TU,LF is specified from -0.3 V (min) to -1.0 V (max) at VDS = -3 V and ID = -1 mA. This range ensures predictable turn-on behavior with low-voltage gate drivers and provides noise margin against false triggering in noisy environments. The typical Vth is -0.6 V, supporting reliable operation even with 1.5-V logic-level signals.
Can SSM3J145TU,LF be used with a 1.8-V microcontroller GPIO?
Yes, the SSM3J145TU,LF supports 1.5-V gate drive and exhibits RDS(ON) = 180 mΩ (max) at VGS = -1.8 V, making it fully compatible with 1.8-V microcontroller GPIOs. Its low Vth ensures strong enhancement-mode conduction without requiring external level shifters, simplifying circuit design in battery-powered and low-power systems where SSM3J145TU,LF is commonly deployed.
What is the thermal resistance from channel to ambient for SSM3J145TU,LF?
The channel-to-ambient thermal resistance (Rth(ch-a)) for SSM3J145TU,LF is not fixed-it varies significantly with PCB layout. On a standard FR4 board (25.4 × 25.4 × 1.6 mm, 645 mm² Cu pad), the power dissipation rating is 1000 mW for pulse conditions (t < 1 s) and 500 mW for DC operation. For accurate thermal modeling, refer to Figure 8.12 (rth(j-a) vs. pulse width) and apply layout-specific derating based on copper area and layer stackup.
SSM3J145TU,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVI
- Package/Case:
- 3-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 103mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.6 nC @ 4.5 V
- Vgs (Max):
- +6V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UFM
SSM3J145TU,LF FAQ
1.How can I place an order for SSM3J145TU,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM3J145TU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM3J145TU,LF reliable?
The price and inventory of SSM3J145TU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3J145TU,LF is usually 5 days.
3.What payment methods are accepted for SSM3J145TU,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3J145TU,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM3J145TU,LF?
SSM3J145TU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM3J145TU,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM3J145TU,LF?
For technical support, including SSM3J145TU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3J145TU,LF requirements.
6.How does Aetrix verify that SSM3J145TU,LF is sourced from the original manufacturer or authorized distributors?
All SSM3J145TU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3J145TU,LF meets industry standards.
7.What is the process for return or replacement of SSM3J145TU,LF?
All SSM3J145TU,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM3J145TU,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM3J145TU,LF part is unused and in its original packaging.
Return procedure for SSM3J145TU,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SSM3J145TU,LF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
