Toshiba Semiconductor and Storage SSM3J16FU(TE85L,F)

Overview

SSM3J16FU(TE85L,F) from Toshiba is a silicon P-channel MOSFET in the π-MOSVI family, designed for low-voltage high-speed switching and analog switch applications. It features R_DS(ON) = 8 Ω (max) at V_GS = −4 V, V_DS = −20 V rating, and SC-70 (JEITA: SC-70, Toshiba: 2-2E1E) package with 3 terminals. It is commonly used in portable power management and signal routing circuits.

For engineers reviewing the SSM3J16FU(TE85L,F) datasheet, SSM3J16FU(TE85L,F) pinout, SSM3J16FU(TE85L,F) application, or SSM3J16FU(TE85L,F) equivalent, key selection criteria include guaranteed R_DS(ON) across −1.5 V to −4 V gate drive, low input capacitance (C_iss = 11 pF), and thermal performance on FR4 boards under pulsed ID conditions.

Technical Context

This P-channel enhancement-mode MOSFET operates with a gate threshold voltage V_th of −0.6 V to −1.1 V (V_DS = −3 V, I_D = −0.1 mA), enabling logic-level compatibility with 2.5 V/3.3 V control signals. Its forward transfer admittance |Y_fs| reaches 25 mS (typ.) at I_D = −10 mA, supporting fast turn-on/turn-off transitions (t_on = 130 ns, t_off = 190 ns).

The device uses a small-signal silicon process optimized for low R_DS(ON) and low C_iss/C_rss trade-offs: C_iss = 11 pF, C_rss = 3.7 pF, and C_oss = 10 pF at V_DS = −3 V. It is rated for continuous drain current I_D = −100 mA and pulse current I_DP = −200 mA, with channel temperature limit T_ch = 150 °C.

Key Specifications

Pinout & Package

SSM3J16FU(TE85L,F) is housed in a JEITA-standard SC-70 package (Toshiba designation: 2-2E1E), measuring 1.0 mm × 0.6 mm × 0.4 mm, with gull-wing leads and 6.0 mg typical weight. The package is surface-mount compatible and optimized for high-density portable PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with DMN2013LFG-7 and AO3401, the SSM3J16FU(TE85L,F) offers optimal balance of ultra-small size, low gate charge, and sufficient R_DS(ON) for signal-level switching-making it uniquely suited for space-constrained, low-power analog and mixed-signal routing where both speed and footprint matter.

Availability

SSM3J16FU(TE85L,F) is available at Aetrix Electronics and suitable for battery-powered load switching, USB data line protection, low-voltage signal multiplexing, and reverse polarity protection requiring stable component supply and long-term manufacturability.

Supply support for SSM3J16FU(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, miniaturization, and reliability for consumer, industrial, and automotive systems.

The SSM3J16FU(TE85L,F) belongs to Toshiba's π-MOSVI series of small-signal P-channel MOSFETs, engineered specifically for high-speed, low-voltage analog and digital switching in portable and space-constrained electronics.

FAQ

What is the maximum gate-source voltage rating for SSM3J16FU(TE85L,F)?

The SSM3J16FU(TE85L,F) has a gate-source voltage rating of ±10 V. Exceeding this limit-even briefly-can cause irreversible gate oxide damage. This rating applies under both DC and transient conditions, and design margins should maintain V_GS within −9 V to +9 V during all operational and ESD events. The SSM3J16FU(TE85L,F) datasheet specifies this absolute maximum to ensure long-term reliability in real-world PCB environments.

Does SSM3J16FU(TE85L,F) support logic-level gate drive from 2.5 V microcontrollers?

Yes, the SSM3J16FU(TE85L,F) supports logic-level drive from 2.5 V systems: its gate threshold voltage V_th ranges from −0.6 V to −1.1 V, and R_DS(ON) is specified at −2.5 V (12 Ω max). At −2.5 V V_GS, the device delivers usable on-state performance for low-current analog switching. However, full enhancement and minimal R_DS(ON) require −4 V, so system designers should verify load current versus acceptable on-loss for each SSM3J16FU(TE85L,F) application.

What is the thermal resistance θ_JA of SSM3J16FU(TE85L,F) on a standard FR4 board?

The SSM3J16FU(TE85L,F) does not specify θ_JA directly, but its power dissipation rating is 150 mW when mounted on a defined FR4 test board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.6 mm² × 3). From this, θ_JA is approximately 333 °C/W (calculated as (150 °C − 25 °C) / 0.15 W). This value assumes no additional copper pour or thermal vias; actual θ_JA in production layouts will vary based on PCB copper area and airflow. The SSM3J16FU(TE85L,F) datasheet provides R_DS(ON) vs. temperature curves to aid thermal design.

Can SSM3J16FU(TE85L,F) be used in bidirectional analog signal paths?

Yes, the SSM3J16FU(TE85L,F) can operate bidirectionally in analog signal paths due to its symmetrical source/drain structure in enhancement-mode P-channel configuration. Its low C_iss (11 pF) and C_rss (3.7 pF) minimize signal coupling and distortion. However, body diode conduction must be avoided by ensuring V_GS remains sufficiently negative during signal swings; proper biasing is required to keep the channel fully enhanced across the full signal range. This behavior is confirmed in the SSM3J16FU(TE85L,F) switching time test circuit and ID–VDS characterization.

Is SSM3J16FU(TE85L,F) RoHS compliant and lead-free?

Yes, the SSM3J16FU(TE85L,F) is RoHS compliant and lead-free. Toshiba confirms compliance with EU Directive 2011/65/EU (RoHS 2) and related amendments. The part marking "(TE85L,F)" denotes tape-and-reel packaging with lead-free termination finish. Full material declarations and test reports are available through Toshiba's environmental portal; Aetrix Electronics guarantees traceable sourcing of RoHS-compliant SSM3J16FU(TE85L,F) lots per order.