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Toshiba Semiconductor and Storage SSM3J306T(TE85L,F)

Name: SSM3J306T(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: SSM3J306T(TE85L,F)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM3J306T(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SSM3J306T(TE85L,F).pdf

Description:: MOSFET P-CH 30V 2.4A TSM

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Product details

Overview

SSM3J306T(TE85L,F) from Toshiba is a silicon P-channel enhancement-mode MOSFET designed for low-voltage power management switching applications. It delivers 2.4 A continuous drain current, 30 V drain-source breakdown voltage, and low on-resistance of 225 mΩ max at −4 V gate drive-enabling efficient load switching in compact DC-DC converters and battery protection circuits.

For engineers reviewing the SSM3J306T(TE85L,F) datasheet, SSM3J306T(TE85L,F) pinout, SSM3J306T(TE85L,F) application, or SSM3J306T(TE85L,F) equivalent, key selection criteria include verified −4 V logic-level gate drive compatibility, thermal performance on FR4 (700 mW PD), and confirmed SOT-23 package footprint with source-common configuration.

Technical Context

This P-channel MOSFET operates in enhancement mode with a gate threshold voltage range of −1.2 V to −2.6 V (V_GS = −5 V, I_D = −1 mA), enabling reliable turn-on with standard 3.3 V or 5 V control signals. Its low input capacitance (C_iss = 280 pF) and fast switching times (t_on = 16 ns, t_off = 35 ns) support high-frequency PWM operation up to several hundred kHz.

The device uses a planar silicon process optimized for low R_DS(on) and stable parametric behavior over temperature. Channel temperature is rated to 150°C, and its transient thermal impedance curve confirms suitability for pulsed-load applications when mounted on standard 645 mm² copper pads per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - supports 24 V rail systems with 20% derating margin
R_DS(on) @ −4 V	225 mΩ max - enables <100 mW conduction loss at 2.4 A
I_D (DC)	−2.4 A - sufficient for USB-C PD load switches and LED drivers
Q_g	2.5 nC - allows fast switching with low gate-drive power demand
P_D (FR4)	700 mW - validated on 25.4 × 25.4 mm FR4 board with 645 mm² Cu pad
V_th	−1.2 to −2.6 V - ensures robust noise margin against false turn-on at 3.3 V logic
C_iss	280 pF - limits Miller-induced shoot-through risk in half-bridge configurations

Pinout & Package

SSM3J306T(TE85L,F) is housed in a surface-mount SOT-23 (JEITA: 2-3S1A) package, measuring 2.9 × 1.6 × 1.1 mm, with gull-wing leads and a 10 mg typical weight. The package is RoHS-compliant and optimized for automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts negative V_GS to enable conduction; requires −4 V or lower for full enhancement
2 (Source)	Reference node	Connected to higher potential rail (e.g., V_IN); serves as common return for gate drive
3 (Drain)	Load connection	Switches current to ground or low-side load; polarity inverted vs N-channel topology

Key Features

Feature	Design Value
4 V logic-level drive	Guaranteed R_DS(on) ≤ 225 mΩ at V_GS = −4 V - eliminates need for level-shifting in 3.3 V microcontroller systems
Low gate charge	Q_g = 2.5 nC - reduces gate driver power loss and enables >500 kHz PWM without excessive heating
High V_GS tolerance	±20 V rating - withstands transient coupling and ESD events during hot-plug or inductive load switching
Thermal stability	R_DS(on) increases only ~30% from 25°C to 100°C - maintains predictable power loss across industrial ambient ranges

Applications

Battery Protection Circuit	USB Power Delivery Switch
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel high-side switch controlled by battery management IC to disconnect load during fault conditions. Use Value: Low 225 mΩ R_DS(on) minimizes voltage drop across protection path, preserving usable battery capacity and runtime.	Use Scenario: V_CONN and V_bus path switching in USB-C receptacles supporting alternate modes. IC Role / Device Role / Timing Role: Load switch isolating power rails between host and peripheral during plug/unplug events. Use Value: Fast 16 ns turn-on time ensures seamless power handover without brownout during cable insertion.
DC-DC Converter Synchronous Rectifier	Industrial Sensor Power Gating
Use Scenario: High-efficiency synchronous rectification in buck converter output stage operating at 300–600 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses. Use Value: C_oss = 80 pF and Q_gd = 1.2 nC minimize switching losses and improve light-load efficiency.	Use Scenario: Controlled power-up sequencing for analog sensor subsystems in programmable logic controllers. IC Role / Device Role / Timing Role: Precision-controlled power gate enabling timed activation of 3.3 V sensor rails. Use Value: Tight V_th distribution (−1.2 to −2.6 V) ensures consistent turn-on timing across temperature and unit-to-unit variation.

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlled by battery management IC to disconnect load during fault conditions.

Use Value: Low 225 mΩ R_DS(on) minimizes voltage drop across protection path, preserving usable battery capacity and runtime.

Use Scenario: V_CONN and V_bus path switching in USB-C receptacles supporting alternate modes.

IC Role / Device Role / Timing Role: Load switch isolating power rails between host and peripheral during plug/unplug events.

Use Value: Fast 16 ns turn-on time ensures seamless power handover without brownout during cable insertion.

DC-DC Converter Synchronous Rectifier

Industrial Sensor Power Gating

Use Scenario: High-efficiency synchronous rectification in buck converter output stage operating at 300–600 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses.

Use Value: C_oss = 80 pF and Q_gd = 1.2 nC minimize switching losses and improve light-load efficiency.

Use Scenario: Controlled power-up sequencing for analog sensor subsystems in programmable logic controllers.

IC Role / Device Role / Timing Role: Precision-controlled power gate enabling timed activation of 3.3 V sensor rails.

Use Value: Tight V_th distribution (−1.2 to −2.6 V) ensures consistent turn-on timing across temperature and unit-to-unit variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011UFD-7	R_DS(on) = 190 mΩ @ −4.5 V; SOT-23-3; higher Q_g (3.2 nC)	Requires −4.5 V gate drive; slightly slower switching	Preferred where tighter R_DS(on) tolerance is needed but gate drive can be adjusted to −4.5 V
AO3401	R_DS(on) = 55 mΩ @ −4.5 V; SOT-23-3; lower V_DS (−30 V same)	Lower R_DS(on) but requires −4.5 V for spec; not rated for 150°C T_ch	Best for cost-sensitive consumer designs with relaxed thermal requirements and available −4.5 V drive

Compared with DMN2011UFD-7 and AO3401, the SSM3J306T(TE85L,F) offers superior thermal robustness (150°C channel rating), tighter V_th control for 3.3 V logic compatibility, and lower total gate charge-making it optimal for industrial-grade power gating where reliability under sustained load is critical.

Availability

SSM3J306T(TE85L,F) is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial sensor power gating requiring stable component supply and long-term manufacturability.

Supply support for SSM3J306T(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete transistor design and reliability engineering.

The SSM3J306T(TE85L,F) belongs to Toshiba's SSM3 series of small-signal P-channel MOSFETs, engineered specifically for space-constrained, low-voltage power management in portable and industrial electronics where logic-level drive and thermal resilience are essential.

FAQ

What is the maximum continuous drain current for SSM3J306T(TE85L,F) at 25°C ambient?

The SSM3J306T(TE85L,F) supports −2.4 A DC drain current at T_a = 25°C when mounted on a standard FR4 board with 645 mm² copper pad. This rating assumes proper thermal layout and derating per the transient thermal impedance curve; actual current capability decreases with rising ambient temperature or reduced copper area.

Does SSM3J306T(TE85L,F) support 3.3 V microcontroller gate drive?

Yes, the SSM3J306T(TE85L,F) is explicitly characterized for −4 V gate drive and has a gate threshold voltage range of −1.2 V to −2.6 V. When driven by a 3.3 V GPIO (pulling gate to 0 V while source is at 3.3 V), V_GS ≈ −3.3 V-within the guaranteed conduction region, delivering R_DS(on) ≤ 225 mΩ per datasheet specifications.

What is the thermal resistance θ_JA for SSM3J306T(TE85L,F) on standard FR4?

The SSM3J306T(TE85L,F) exhibits a junction-to-ambient thermal resistance of approximately 179°C/W when mounted on a 25.4 × 25.4 mm FR4 board with 645 mm² copper pad (per Note 1 in Absolute Maximum Ratings). This value is derived from its 700 mW power dissipation limit and 150°C maximum channel temperature.

Is SSM3J306T(TE85L,F) RoHS compliant and halogen-free?

Yes, the SSM3J306T(TE85L,F) meets RoHS Directive 2011/65/EU requirements. Toshiba confirms compliance in its environmental documentation, and the device is manufactured using halogen-free molding compounds. Full material declarations and test reports are available upon request through Aetrix Electronics' technical support team.

Can SSM3J306T(TE85L,F) be used in linear regulation mode?

No, the SSM3J306T(TE85L,F) is not intended for linear regulation. Its Safe Operating Area (SOA) is limited to pulse operation, and continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on). The datasheet specifies only switching applications-power management switches-and does not provide SOA curves for DC bias conditions.

SSM3J306T(TE85L,F) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 117mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 15 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSM

SSM3J306T(TE85L,F) FAQ

1.How can I place an order for SSM3J306T(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM3J306T(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM3J306T(TE85L,F) reliable?

The price and inventory of SSM3J306T(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3J306T(TE85L,F) is usually 5 days.

3.What payment methods are accepted for SSM3J306T(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3J306T(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM3J306T(TE85L,F)?

SSM3J306T(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM3J306T(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM3J306T(TE85L,F)?

For technical support, including SSM3J306T(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3J306T(TE85L,F) requirements.

6.How does Aetrix verify that SSM3J306T(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All SSM3J306T(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3J306T(TE85L,F) meets industry standards.

7.What is the process for return or replacement of SSM3J306T(TE85L,F)?

All SSM3J306T(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with SSM3J306T(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM3J306T(TE85L,F) part is unused and in its original packaging.

Return procedure for SSM3J306T(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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