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Toshiba Semiconductor and Storage SSM3J371R,LXHF
- Part No.:
- SSM3J371R,LXHF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-3 Flat Leads
- Datasheet:
-
SSM3J371R,LXHF.pdf
- Description:
- SMOS P-CH VDSS:-20V VGSS:-8/+6V
- Quantity:
- Payment:
- Shipping:
Inventory:12,597
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Product details
Overview
SSM3J371R,LXHF from Toshiba Electronic Devices & Storage Corporation is a P-channel enhancement-mode MOSFET in SOT-23F package, rated for -20 V VDSS, -4 A ID (DC), and 55 mΩ RDS(ON) at VGS = -4.5 V. It supports low-voltage gate drive down to -1.5 V and is AEC-Q101 qualified for automotive power management switches.
For engineers reviewing the SSM3J371R,LXHF datasheet, SSM3J371R,LXHF pinout, SSM3J371R,LXHF application, or SSM3J371R,LXHF equivalent, key selection criteria include its -1.5 V gate threshold compatibility with low-power microcontrollers, RDS(ON) vs. VGS curve behavior, thermal resistance of 125 °C/W on FR4, and AEC-Q101 qualification status for automotive-grade reliability validation.
Technical Context
This device operates as a single P-channel silicon MOSFET using Toshiba's U-MOS process. Its gate threshold voltage (Vth) ranges from -0.3 V to -1.0 V, enabling reliable turn-on with logic-level controllers. The RDS(ON) drops from 150 mΩ at -1.5 V to 55 mΩ at -4.5 V, supporting scalable drive voltage design.
Dynamic performance includes 630 pF input capacitance (Ciss) and 14 ns typical turn-on time under 4.7 Ω gate resistance. The body diode exhibits VDSF = 0.86 V (typ.) at 4.0 A, suitable for synchronous rectification or reverse-polarity protection where controlled forward conduction is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20 V - Maximum drain-source blocking voltage for 12 V automotive rail protection |
| RDS(ON) @ VGS = -4.5 V | 55 mΩ (max) - Enables ≤165 mW conduction loss at 3 A DC load current |
| ID (DC) | -4 A - Supports continuous switching of loads up to ~48 W at 12 V with adequate heatsinking |
| Vth | -0.3 to -1.0 V - Ensures robust turn-on with 1.8 V or 3.3 V GPIO without level-shifting |
| Rth(ch-a) | 125 °C/W - Requires thermal derating above 800 mW on standard FR4 board (25.4 × 25.4 mm) |
| Ciss | 630 pF - Determines gate drive strength requirement; ~10 nC total Qg enables fast switching with <10 mA peak drive |
| AEC-Q101 | Qualified - Validated for automotive temperature cycling, HTRB, and ESD per JESD22-A114 |
Pinout & Package
SOT-23F surface-mount package with gull-wing leads, 0.011 g typical weight, and JEDEC-compliant footprint. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Accepts negative gate-source voltage; threshold range (-0.3 to -1.0 V) ensures compatibility with low-voltage logic |
| 2 (Source) | Reference node | Connected to higher potential rail (e.g., battery +); source-drain polarity defines P-channel operation |
| 3 (Drain) | Load connection | Switches load to ground; body diode anode at source, cathode at drain enables reverse-polarity protection |
Key Features
| Feature | Design Value |
|---|---|
| 1.5 V gate drive capability | Enables direct interface with 1.8 V microcontrollers without level shifters, reducing BOM count and layout area |
| AEC-Q101 qualification | Validates reliability for automotive ambient temperatures (-40 to +125 °C) and mechanical stress conditions |
| Low RDS(ON) at low VGS | 100 mΩ max at -1.8 V allows efficient operation in battery-powered systems with limited gate drive headroom |
| Integrated body diode | 0.86 V typical VDSF supports reverse-current blocking and freewheeling in high-side switch configurations |
| SOT-23F package | Standardized footprint compatible with automated pick-and-place and reflow processes; 1.3 mm height aids ultra-thin designs |
Applications
| Reverse-Polarity Protection | Automotive Load Switch |
|---|---|
Use Scenario: Prevents damage to downstream electronics when battery terminals are accidentally reversed during service or replacement. IC Role / Device Role: High-side P-channel MOSFET configured as ideal diode with gate driven by voltage divider or dedicated controller. Use Value: Replaces Schottky diodes with lower forward drop and zero reverse leakage; 55 mΩ RDS(ON) limits voltage drop to <165 mV at 3 A. | Use Scenario: Controlled power delivery to infotainment modules, sensors, or lighting subsystems in 12 V vehicle architectures. IC Role / Device Role: Single-pole high-side switch managed by MCU GPIO or PMIC enable signal. Use Value: AEC-Q101 qualification ensures compliance with automotive functional safety requirements; -1.5 V Vth enables direct 3.3 V MCU control. |
| USB-C Power Delivery Clamp | Industrial Backup Power Selector |
Use Scenario: Limits inrush and blocks reverse current in dual-input USB-C PD systems with primary/backup sources. IC Role / Device Role: OR-ing FET in high-side configuration, coordinated with PD controller for seamless source handover. Use Value: Low Ciss (630 pF) and fast ton (14 ns) minimize transition losses during dynamic source switching. | Use Scenario: Selects between main AC-DC supply and backup battery in programmable logic controllers or HMIs. IC Role / Device Role: High-side switch isolating backup path; body diode prevents backfeed while enabling automatic switchover. Use Value: RDS(ON) stability over temperature (-55 to +150 °C) ensures predictable dropout across industrial operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFG-7 | RDS(ON) = 60 mΩ @ -4.5 V; VDSS = -20 V; SOT-23 package (not SOT-23F) | No AEC-Q101 qualification; rated for commercial temp only (-40 to +85 °C) | Prefer for cost-sensitive non-automotive applications where qualification is not required |
| AO3401 | RDS(ON) = 52 mΩ @ -4.5 V; VDSS = -30 V; SOT-23 package; no AEC-Q101 | Higher voltage rating but unqualified for automotive use; slightly lower RDS(ON) | Select when system requires >20 V blocking margin and automotive qualification is unnecessary |
Compared with DMN2011UFG-7 and AO3401, the SSM3J371R,LXHF provides verified AEC-Q101 qualification and tighter Vth distribution (-0.3 to -1.0 V), making it uniquely suitable for automotive high-side switches requiring guaranteed low-voltage turn-on and extended temperature reliability.
Availability
SSM3J371R,LXHF is available at Aetrix Electronics and suitable for automotive load switching, reverse-polarity protection, and industrial backup power selection requiring stable component supply and long-term lifecycle support.
Supply support for SSM3J371R,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and consumer reliability standards.
The SSM3J371R,LXHF belongs to Toshiba's U-MOS P-channel MOSFET product line, engineered specifically for low-voltage, high-reliability power management in automotive ECUs and ADAS subsystems.
FAQ
What is the maximum continuous drain current for SSM3J371R,LXHF at 25 °C?
The SSM3J371R,LXHF has a maximum continuous drain current (ID) of -4 A at Ta = 25 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal management-specifically, mounting on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 645 mm² copper pad area. At elevated ambient temperatures or reduced copper area, derating is required per the PD–Ta curve in the datasheet.
Does SSM3J371R,LXHF support 1.8 V logic-level gate drive?
Yes, the SSM3J371R,LXHF supports 1.8 V logic-level gate drive. Its gate threshold voltage (Vth) is specified from -0.3 V to -1.0 V, and RDS(ON) is guaranteed at 100 mΩ (max) with VGS = -1.8 V. This ensures full enhancement and low conduction loss when driven directly by 1.8 V microcontrollers without external level shifting, making the SSM3J371R,LXHF suitable for space-constrained, low-power automotive modules.
Is SSM3J371R,LXHF pin-compatible with other SOT-23 P-channel MOSFETs?
The SSM3J371R,LXHF uses the SOT-23F package with standard pinout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain. While mechanically compatible with generic SOT-23 footprints, the SOT-23F variant features gull-wing leads optimized for solder joint reliability. Electrical compatibility depends on VDSS, Vth, and RDS(ON) matching-do not assume functional interchangeability without verifying these parameters for the SSM3J371R,LXHF in your specific circuit.
What is the thermal resistance from channel to ambient for SSM3J371R,LXHF?
The channel-to-ambient thermal resistance (Rth(ch-a)) of the SSM3J371R,LXHF is 125 °C/W when mounted on a standard 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 645 mm² copper pad area. This value is critical for calculating junction temperature rise: Tj = Ta + (PD × Rth(ch-a)). Exceeding 150 °C channel temperature violates absolute maximum ratings and must be avoided via layout optimization or power derating.
How does the body diode of SSM3J371R,LXHF perform in reverse-current protection?
The SSM3J371R,LXHF integrates a body diode with VDSF = 0.86 V (typ.) at 4.0 A and 25 °C. In reverse-polarity protection circuits, this diode conducts only during fault conditions, limiting reverse current while the MOSFET remains off. Its low forward voltage reduces power dissipation compared to discrete Schottky diodes, and its inherent integration eliminates separate component placement-key for compact SSM3J371R,LXHF-based protection designs.
SSM3J371R,LXHF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVI
- Package/Case:
- SOT-23-3 Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.4 nC @ 4.5 V
- Vgs (Max):
- +6V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 630 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23F
SSM3J371R,LXHF FAQ
1.How can I place an order for SSM3J371R,LXHF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM3J371R,LXHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM3J371R,LXHF reliable?
The price and inventory of SSM3J371R,LXHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3J371R,LXHF is usually 5 days.
3.What payment methods are accepted for SSM3J371R,LXHF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3J371R,LXHF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM3J371R,LXHF?
SSM3J371R,LXHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM3J371R,LXHF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM3J371R,LXHF?
For technical support, including SSM3J371R,LXHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3J371R,LXHF requirements.
6.How does Aetrix verify that SSM3J371R,LXHF is sourced from the original manufacturer or authorized distributors?
All SSM3J371R,LXHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3J371R,LXHF meets industry standards.
7.What is the process for return or replacement of SSM3J371R,LXHF?
All SSM3J371R,LXHF units undergo pre-shipment inspection (PSI). If there is an issue with SSM3J371R,LXHF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM3J371R,LXHF part is unused and in its original packaging.
Return procedure for SSM3J371R,LXHF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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