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Toshiba Semiconductor and Storage SSM3K106TU(TE85L)
- Part No.:
- SSM3K106TU(TE85L)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 3-SMD, Flat Leads
- Datasheet:
-
SSM3K106TU(TE85L).pdf
- Description:
- MOSFET N-CH 20V 1.2A UFM
- Quantity:
- Payment:
- Shipping:
Inventory:3,371
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Product details
Overview
SSM3K106TU(TE85L) from Toshiba is a silicon N-channel MOSFET designed for high-speed switching in low-voltage DC-DC converters and load-switching circuits. It features 4 V gate drive compatibility, 530 mΩ max RDS(on) at VGS = 4 V, 20 V VDS rating, and UFM (Ultra Small Flat) package with 3-pin SOT-323 footprint - enabling compact power management in space-constrained portable electronics.
For engineers reviewing the SSM3K106TU(TE85L) datasheet, SSM3K106TU(TE85L) pinout, SSM3K106TU(TE85L) application, or SSM3K106TU(TE85L) equivalent, key selection criteria include its low-threshold Vth (1.1–2.3 V), fast switching times (ton = 21 ns, toff = 8 ns), thermal performance on FR4 (500 mW PD), and verified operation under 4 V logic-level drive without external level shifting.
Technical Context
This discrete N-channel enhancement-mode MOSFET operates in common-source configuration with gate-controlled channel conduction. Its 1.1–2.3 V gate threshold enables reliable turn-on from standard 3.3 V or 4 V microcontroller I/Os, while the 36 pF Ciss and 10 pF Crss support high-frequency switching up to several MHz in synchronous buck stages.
The device uses planar silicon process technology and is characterized for stable RDS(on) across −25°C to 100°C ambient. Thermal impedance data confirms suitability for continuous 1.2 A DC operation on standard FR4 PCBs when copper pad area meets JEDEC-compliant layout guidelines (645 mm²).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - supports input rails up to 18 V DC-DC stages with 10% margin |
| RDS(on) @ VGS = 4 V | 530 mΩ max - enables <1.3 W conduction loss at 1.2 A, critical for battery-powered efficiency |
| Vth | 1.1–2.3 V - ensures full enhancement with 3.3 V GPIO, eliminating need for gate driver IC |
| ton/toff | 21 ns / 8 ns - allows >10 MHz PWM operation in high-frequency point-of-load regulators |
| Ciss/Crss | 36 pF / 10 pF - minimizes gate drive energy and Miller-induced shoot-through risk |
| PD (FR4) | 500 mW - defines maximum continuous power dissipation on standard 1.6 mm FR4 board |
| Package | UFM (SOT-323) - 2.1 × 1.7 × 0.7 mm footprint, compatible with 0.65 mm pitch reflow assembly |
Pinout & Package
SSM3K106TU(TE85L) uses the UFM (Ultra Small Flat) package - a 3-pin surface-mount variant of SOT-323 with gull-wing leads, measuring 2.1 mm × 1.7 mm × 0.7 mm and weighing 6.6 mg. It is optimized for automated placement and high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 0–4 V logic signal; low Ciss reduces drive current demand from MCU |
| 2 (Source) | Reference node for gate voltage | Connected to ground or low-side return path; forms common-source topology |
| 3 (Drain) | Current output terminal | Switches load between supply rail and source; rated for 20 V and 1.2 A continuous |
Key Features
| Feature | Design Value |
|---|---|
| 4 V logic-level gate drive | Enables direct interface with 3.3 V/4 V microcontrollers without level-shifting circuitry |
| Low RDS(on) at low VGS | 390–530 mΩ at 4 V ensures minimal I²R loss in always-on or pulsed load-switch applications |
| Fast switching speed | 21 ns turn-on and 8 ns turn-off minimize dead-time losses in synchronous rectification |
| Ultra-small UFM package | 2.1 × 1.7 mm footprint saves >60% board area vs. standard SOT-23, critical for wearables and TWS earbuds |
| −55°C to 150°C operating range | Validated channel temperature limit supports industrial ambient conditions and short-term surge loads |
Applications
| USB Power Delivery Switching | Portable Device Load Control |
|---|---|
Use Scenario: Enabling/disabling 5 V USB power rail to peripheral modules in smartphones and tablets. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path with fast enable/disable response. Use Value: 4 V gate compatibility allows direct control from application processor GPIO; 530 mΩ RDS(on) limits voltage drop to <0.64 V at 1.2 A, preserving USB compliance. | Use Scenario: Isolating backup battery or sensor subsystems during deep-sleep mode in IoT edge nodes. IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-current power gate for system-level power domain management. Use Value: 1 μA max IDSS and sub-μA gate leakage ensure <1 μA off-state current, extending battery life beyond 1 year in sleep mode. |
| DC-DC Converter Synchronous Rectifier | LED Driver Current Path Switch |
Use Scenario: Replacing Schottky diode in 3.3 V/5 V buck converter output stage for improved efficiency. IC Role / Device Role / Timing Role: Synchronously commutated low-side switch driven by controller's complementary PWM output. Use Value: 21 ns ton/8 ns toff and low Crss reduce timing skew and cross-conduction risk at 2 MHz switching frequency. | Use Scenario: Pulse-width modulated current path control for RGB LED backlighting in compact displays. IC Role / Device Role / Timing Role: Fast-switching series pass element modulating LED current with minimal overshoot. Use Value: 310 mΩ RDS(on) at 10 V enables <0.4 V forward drop at 1.3 A, reducing thermal load on LED PCB and improving color stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | 20 V VDS, 32 mΩ RDS(on) @ 4.5 V, SOT-23 package (larger footprint) | Lower RDS(on) but requires ≥4.5 V drive; not suitable for strict 3.3 V-only systems | Select when higher current (>2 A) and lower conduction loss outweigh board space constraints |
| AO3400 | 30 V VDS, 42 mΩ RDS(on) @ 10 V, same SOT-23 footprint but higher Vth (0.7–1.4 V) | Higher voltage rating trades off gate drive margin; less robust against VGS undershoot in noisy environments | Prefer where 30 V headroom is required and 10 V gate drive is available |
Compared with DMN2016LFG-7 and AO3400, the SSM3K106TU(TE85L) uniquely balances ultra-compact UFM packaging, guaranteed 4 V drive capability, and tightly specified Vth window - making it optimal for space-limited, single-supply 3.3 V embedded systems where gate drive margin and thermal density are primary constraints.
Availability
SSM3K106TU(TE85L) is available at Aetrix Electronics and suitable for USB power delivery switching, portable device load control, and DC-DC converter synchronous rectification requiring stable component supply and long-term industrial availability.
Supply support for SSM3K106TU(TE85L) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and energy efficiency for consumer, industrial, and automotive markets.
The SSM3K106TU(TE85L) belongs to Toshiba's SSM3K-series of ultra-compact logic-level N-channel MOSFETs, engineered specifically for high-density portable electronics requiring minimal gate drive voltage and ultra-small footprint without sacrificing thermal performance.
FAQ
What is the maximum continuous drain current for SSM3K106TU(TE85L) at 25°C ambient?
The SSM3K106TU(TE85L) supports 1.2 A DC drain current at Ta = 25°C when mounted on an FR4 board per Note 2 in the datasheet. This rating assumes 645 mm² copper pad area and derates linearly above 25°C - reaching zero at ~125°C ambient based on the PD-Ta curve. Always verify PCB layout thermal performance before final design validation.
Does SSM3K106TU(TE85L) support 3.3 V logic-level gate drive reliably?
Yes, SSM3K106TU(TE85L) has a guaranteed gate threshold voltage (Vth) of 1.1–2.3 V and achieves 530 mΩ max RDS(on) at VGS = 4 V. With typical 3.3 V GPIO outputs delivering ≥3.0 V under load, the device remains fully enhanced - confirmed by ID–VGS curves showing >0.6 A drain current at 3.3 V in Figure 2 of the datasheet.
What is the thermal resistance θJA of SSM3K106TU(TE85L) on FR4?
The SSM3K106TU(TE85L) exhibits 250°C/W junction-to-ambient thermal resistance (θJA) when mounted on a standard 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 645 mm² copper pad (Note 2). This value is derived from its 500 mW PD rating at 25°C ambient and is validated in the PD–Ta derating curve on page 4 of the datasheet.
Is SSM3K106TU(TE85L) RoHS compliant and lead-free?
Yes, SSM3K106TU(TE85L) is RoHS compliant and lead-free. Toshiba confirms this in its environmental compliance documentation, and the device carries the "EU RoHS Directive compliant" marking per the product labeling specification on page 1 of the datasheet. Full material declarations are available upon request from Toshiba sales representatives.
Can SSM3K106TU(TE85L) be used in avalanche energy applications?
No, SSM3K106TU(TE85L) is not rated for repetitive avalanche operation. The datasheet specifies no avalanche energy (EAS) rating, and absolute maximum ratings do not include avalanche-related parameters. It must be operated within safe operating area (SOA) limits defined in the datasheet - transient overvoltage events require external clamping or snubbing networks.
SSM3K106TU(TE85L) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVI
- Package/Case:
- 3-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 310mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UFM
SSM3K106TU(TE85L) FAQ
1.How can I place an order for SSM3K106TU(TE85L) through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM3K106TU(TE85L) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM3K106TU(TE85L) reliable?
The price and inventory of SSM3K106TU(TE85L) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3K106TU(TE85L) is usually 5 days.
3.What payment methods are accepted for SSM3K106TU(TE85L)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3K106TU(TE85L) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM3K106TU(TE85L)?
SSM3K106TU(TE85L) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM3K106TU(TE85L) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM3K106TU(TE85L)?
For technical support, including SSM3K106TU(TE85L) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3K106TU(TE85L) requirements.
6.How does Aetrix verify that SSM3K106TU(TE85L) is sourced from the original manufacturer or authorized distributors?
All SSM3K106TU(TE85L) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3K106TU(TE85L) meets industry standards.
7.What is the process for return or replacement of SSM3K106TU(TE85L)?
All SSM3K106TU(TE85L) units undergo pre-shipment inspection (PSI). If there is an issue with SSM3K106TU(TE85L), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM3K106TU(TE85L) part is unused and in its original packaging.
Return procedure for SSM3K106TU(TE85L):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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