Toshiba Semiconductor and Storage SSM3K15CT,L3F

Overview

SSM3K15CT,L3F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel MOSFET designed for low-voltage, high-speed switching and analog switch applications. It delivers R_DS(ON) = 4.0 Ω (max) at V_GS = 4 V, supports 30 V V_DS, 100 mA continuous drain current, and operates in the ultra-compact CST3 (SOT-323) package for high-density PCB layouts.

For engineers reviewing the SSM3K15CT,L3F datasheet, SSM3K15CT,L3F pinout, SSM3K15CT,L3F application, or SSM3K15CT,L3F equivalent, key selection criteria include its low gate threshold voltage (0.8–1.5 V), fast switching times (t_on = 50 ns, t_off = 180 ns), and guaranteed R_DS(ON) performance down to V_GS = 2.5 V - critical for 3.3 V logic-controlled load switching and signal routing.

Technical Context

This discrete N-channel enhancement-mode MOSFET uses planar silicon technology optimized for low-voltage operation and minimal gate charge. Its 7.8 pF input capacitance (C_iss) and 3.6 pF reverse transfer capacitance (C_rss) support clean, low-distortion switching in analog multiplexer and power-gating roles.

The device features a single-gate, three-terminal structure with source-connected substrate and bottom-side electrodes. Thermal design is constrained by 100 mW power dissipation on FR4 (10 mm × 10 mm, 100 mm² Cu pad), requiring careful layout for ambient temperatures up to 125°C.

Key Specifications

Pinout & Package

SSM3K15CT,L3F is housed in the CST3 (JEDEC MO-203AA, industry-standard SOT-323) package - a 1.3 mm × 1.7 mm × 0.9 mm surface-mount outline with bottom-side electrode terminals and top-side polarity marking. The package supports reflow soldering and high-density placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel small-signal MOSFET applications.

Compared with DMN2004LK-7 and AO3400, the SSM3K15CT,L3F provides verified 2.5 V operability and smallest package size - making it optimal for space-constrained, low-voltage systems where gate drive margin is limited and board real estate is premium.

Availability

SSM3K15CT,L3F is available at Aetrix Electronics and suitable for USB switching, IoT sensor power gating, GPIO-driven LED dimming, and industrial digital I/O protection requiring stable component supply and long-term manufacturability.

Supply support for SSM3K15CT,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures semiconductor components with emphasis on reliability, efficiency, and integration for industrial, consumer, and automotive markets.

The SSM3K15CT,L3F belongs to Toshiba's small-signal MOSFET product line, engineered specifically for low-voltage, high-density switching in portable and embedded systems where footprint, gate drive compatibility, and parametric consistency are critical.

FAQ

What is the maximum gate-source voltage rating for SSM3K15CT,L3F?

The SSM3K15CT,L3F has a gate-source voltage rating of ±20 V. This specification ensures robustness against transient overshoot during switching and allows safe operation with 3.3 V, 5 V, or 12 V gate drive circuits. Exceeding ±20 V risks permanent gate oxide damage, so clamping or limiting circuitry is recommended in noisy environments. The SSM3K15CT,L3F datasheet confirms this absolute maximum under "Absolute Maximum Ratings" with test condition V_GS = ±16 V yielding ≤±1 µA leakage.

Does SSM3K15CT,L3F support 2.5 V logic-level gate drive?

Yes, the SSM3K15CT,L3F is fully specified for 2.5 V operation: R_DS(ON) is guaranteed at 7.0 Ω (max) with V_GS = 2.5 V and I_D = 10 mA. Its V_th range (0.8–1.5 V) ensures reliable turn-on with 2.5 V logic, and the device is widely used in FPGA and low-voltage MCU I/O expansion. The SSM3K15CT,L3F electrical characteristics table explicitly lists this condition and confirms usable Y_fs and switching performance at that bias point.

What is the thermal derating behavior of SSM3K15CT,L3F above 25°C ambient?

The SSM3K15CT,L3F exhibits linear thermal derating: its 100 mW power dissipation rating at T_a = 25°C decreases to zero at T_a = 150°C, per the PD–Ta curve in the datasheet. On a standard FR4 board (10 mm × 10 mm, 100 mm² Cu pad), the thermal resistance θ_JA is approximately 1250°C/W. For continuous 100 mA operation, junction temperature must be monitored - the SSM3K15CT,L3F's 150°C T_ch limit constrains usable ambient range based on actual power dissipation.

Is SSM3K15CT,L3F suitable for analog signal switching applications?

Yes, the SSM3K15CT,L3F is qualified for analog switching due to its low and flat R_DS(ON) (2.2–4.0 Ω typ./max), low C_iss (7.8 pF), and low C_rss (3.6 pF), which minimize signal distortion and crosstalk. It is explicitly cited in Toshiba documentation for "Analog Switch Applications", and its symmetric on-resistance vs. V_DS curve supports bidirectional signal routing. The SSM3K15CT,L3F's 30 V V_DS rating also accommodates typical audio and sensor signal swing ranges.

What is the package type and marking code for SSM3K15CT,L3F?

The SSM3K15CT,L3F uses the CST3 package - identical to JEDEC SOT-323 - with dimensions 1.3 mm × 1.7 mm × 0.9 mm and bottom-side electrodes. Top-side marking reads "SB" followed by a date/lot code; pin 1 (Gate) is identified by a polarity mark near the left edge. The "L3F" suffix denotes tape-and-reel packaging per EIA-481 standard, and the device weighs 0.75 mg (typical). This matches Toshiba's official package designation 2-1J1B.