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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage SSM3K16FS,LF

Name: SSM3K16FS,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM3K16FS,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM3K16FS,LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: SC-75, SOT-416

Datasheet:: SSM3K16FS,LF.pdf

Description:: SMALL LOW ON RESISTANCE NCH MOSF

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Product details

Overview

SSM3K16FS,LF from Toshiba is a silicon N-channel enhancement-mode MOSFET designed for low-voltage, high-speed switching and analog switch applications in space-constrained systems. It delivers R_DS(ON) = 3.0 Ω (max) at V_GS = 4 V, supports 20 V V_DS, 100 mA continuous drain current, and operates within −55°C to 150°C ambient and channel temperature ranges - ideal for portable power management and signal routing in consumer and industrial electronics.

For engineers reviewing the SSM3K16FS,LF datasheet, SSM3K16FS,LF pinout, SSM3K16FS,LF application, or SSM3K16FS,LF equivalent, key selection criteria include its ultra-compact 2-2H1B package (SOT-323), gate threshold voltage range of 0.6–1.1 V, sub-10 pF input capacitance, 70 ns turn-on time, and verified suitability for battery-powered analog switches and load switching where low quiescent current and fast transition are critical.

Technical Context

The SSM3K16FS,LF employs a planar silicon N-channel MOS structure optimized for low-voltage operation with a gate threshold voltage centered at 0.85 V (typ.) and tightly bounded between 0.6 V and 1.1 V. Its forward transfer admittance |Y_fs| reaches 40 mS (min) at V_DS = 3 V and I_D = 10 mA, enabling strong transconductance control with minimal gate drive.

Switching performance is characterized by 70 ns turn-on and 125 ns turn-off times under V_DD = 3 V, I_D = 10 mA, and V_GS swing from 0 to 2.5 V. Input, output, and reverse transfer capacitances (C_iss = 9.3 pF, C_oss = 9.8 pF, C_rss = 4.5 pF) are specified at V_DS = 3 V and f = 1 MHz, supporting predictable high-frequency switching behavior in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	20 V - supports single-cell Li-ion and 3.3 V/5 V logic-supplied systems without derating
R_DS(ON) @ V_GS = 4 V	3.0 Ω (max) - enables <100 mW conduction loss at 100 mA, suitable for low-power load switching
V_th	0.6–1.1 V - ensures reliable turn-on with standard GPIOs and low-voltage controllers
\|Y_fs\| min	40 mS - provides high gain for precise analog signal gating and current-source control
C_iss	9.3 pF (typ.) - minimizes gate drive energy and reduces EMI in high-speed digital switching
t_on/t_off	70 / 125 ns - supports >5 MHz switching frequency in pulsed-load and PWM applications
P_D @ T_a = 25°C	100 mW - defines thermal limit for surface-mount operation without heatsinking in thin PCBs

Pinout & Package

SSM3K16FS,LF uses the JEITA-standardized 2-2H1B package (Toshiba designation), identical to SOT-323: a 3-pin, ultra-small-outline transistor package measuring 2.0 × 2.12 × 0.9 mm with gull-wing leads and 2.4 mg typical weight. Designed for high-density mounting on compact PCBs, it features a moisture sensitivity level (MSL) compliant with JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts logic-level gate drive; threshold voltage allows direct interfacing with 1.8 V/3.3 V microcontrollers
2 (Drain)	Current sink node	Connected to load or switched rail; rated for 20 V breakdown and 100 mA DC current
3 (Source)	Reference return path	Tied to system ground or common reference; forms low-impedance return for switched current

Key Features

Feature	Design Value
Ultra-low R_DS(ON) at 2.5 V drive	4.0 Ω (max) - enables robust switching even with marginal gate voltage margins
Low gate charge & capacitance	C_iss = 9.3 pF, C_rss = 4.5 pF - reduces switching losses and simplifies gate driver design
High-speed switching	t_on = 70 ns, t_off = 125 ns - supports efficient PWM dimming and fast signal multiplexing
Extended temperature capability	T_ch = 150°C - permits operation in thermally demanding environments like enclosed IoT nodes
ESD-protected structure	±1 μA I_GSS max at ±10 V - enhances handling robustness during manual assembly and rework

Applications

Portable Power Switching	Analog Signal Routing
Use Scenario: Enabling/disabling power to Bluetooth LE modules, sensors, or display backlights in wearables and handheld devices. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V supply rails with minimal voltage drop and fast enable response. Use Value: R_DS(ON) ≤ 3.0 Ω at 4 V gate drive limits dropout to <330 mV at 100 mA, preserving battery runtime and signal integrity.	Use Scenario: Multiplexing audio or sensor signals between MCU ADC inputs and multiple external sources. IC Role / Device Role / Timing Role: Single-pole single-throw (SPST) analog switch providing bidirectional signal path with low on-resistance flatness. Use Value: R_DS(ON) variation <12 Ω across 0–1.5 V input range ensures <0.1% THD in audio paths up to 20 kHz.
Battery Protection Circuits	GPIO-Driven Load Control
Use Scenario: Isolating backup coin-cell or supercapacitor supplies during main battery charging or fault conditions. IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between power domains to prevent backfeed. Use Value: V_(BR)DSS = 20 V and I_DSS ≤ 1 μA ensure safe hold-off during 3.6 V Li-ion charging cycles with margin.	Use Scenario: Driving LED indicators, buzzer drivers, or small solenoids directly from microcontroller GPIO pins. IC Role / Device Role / Timing Role: General-purpose low-side switch replacing discrete BJT solutions for simplified layout. Use Value: Gate threshold compatibility with 1.8 V logic eliminates need for level-shifting, reducing component count and board area.

Portable Power Switching

Analog Signal Routing

Use Scenario: Enabling/disabling power to Bluetooth LE modules, sensors, or display backlights in wearables and handheld devices.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V supply rails with minimal voltage drop and fast enable response.

Use Value: R_DS(ON) ≤ 3.0 Ω at 4 V gate drive limits dropout to <330 mV at 100 mA, preserving battery runtime and signal integrity.

Use Scenario: Multiplexing audio or sensor signals between MCU ADC inputs and multiple external sources.

IC Role / Device Role / Timing Role: Single-pole single-throw (SPST) analog switch providing bidirectional signal path with low on-resistance flatness.

Use Value: R_DS(ON) variation <12 Ω across 0–1.5 V input range ensures <0.1% THD in audio paths up to 20 kHz.

Battery Protection Circuits

GPIO-Driven Load Control

Use Scenario: Isolating backup coin-cell or supercapacitor supplies during main battery charging or fault conditions.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between power domains to prevent backfeed.

Use Value: V_(BR)DSS = 20 V and I_DSS ≤ 1 μA ensure safe hold-off during 3.6 V Li-ion charging cycles with margin.

Use Scenario: Driving LED indicators, buzzer drivers, or small solenoids directly from microcontroller GPIO pins.

IC Role / Device Role / Timing Role: General-purpose low-side switch replacing discrete BJT solutions for simplified layout.

Use Value: Gate threshold compatibility with 1.8 V logic eliminates need for level-shifting, reducing component count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AO3400A	R_DS(ON) = 2.7 Ω (max) @ V_GS = 4.5 V; SOT-23 package (larger footprint than SOT-323)	Higher drive voltage requirement; less suitable for 2.5 V–3.3 V-only systems	Prefer when higher current (>200 mA) capability is needed and board space allows SOT-23
DMN2004LK-7	R_DS(ON) = 3.5 Ω (max) @ V_GS = 2.5 V; same SOT-323 package, but higher V_GS(th) (0.9–1.5 V)	Narrower gate drive margin below 2.5 V; requires tighter V_GS control	Select when sourcing from Diodes Inc. preferred vendors or requiring AEC-Q200 qualified variants

Compared with AO3400A and DMN2004LK-7, the SSM3K16FS,LF offers superior gate-threshold compatibility with 1.8 V/2.5 V logic, tighter R_DS(ON) distribution at low V_GS, and smallest footprint - making it optimal for ultra-dense, battery-sensitive designs where gate drive headroom and board area are constrained.

Availability

SSM3K16FS,LF is available at Aetrix Electronics and suitable for portable power switching, analog signal routing, and GPIO-driven load control requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for SSM3K16FS,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The SSM3K16FS,LF belongs to Toshiba's SSM series of small-signal MOSFETs engineered specifically for high-density, low-voltage switching in consumer electronics, wearables, and IoT edge nodes - emphasizing compactness, low gate drive, and fast transient response.

FAQ

What is the maximum continuous drain current rating for the SSM3K16FS,LF?

The SSM3K16FS,LF has a maximum continuous drain current (I_D) of 100 mA at T_a = 25°C. This rating assumes proper PCB thermal relief and derating per ambient temperature - at 70°C ambient, the usable I_D drops to approximately 65 mA due to its 100 mW power dissipation limit. The SSM3K16FS,LF must not exceed this limit to maintain reliability and avoid thermal runaway.

Does the SSM3K16FS,LF support 1.8 V logic-level gate drive?

Yes, the SSM3K16FS,LF supports 1.8 V logic-level gate drive: its gate threshold voltage (V_th) ranges from 0.6 V to 1.1 V, and R_DS(ON) remains 15 Ω (max) at V_GS = 1.5 V. At 1.8 V, typical R_DS(ON) falls well below 10 Ω, enabling functional switching - though full 3.0 Ω performance requires ≥4 V. The SSM3K16FS,LF is thus suitable for direct GPIO control from modern ultra-low-voltage MCUs.

What is the package type and lead finish of the SSM3K16FS,LF?

The SSM3K16FS,LF uses the 2-2H1B package - Toshiba's designation for the industry-standard SOT-323 footprint (2.0 × 2.12 × 0.9 mm). It features gull-wing leads with matte tin (Sn) plating over nickel underplate, compliant with JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30°C/60% RH). The SSM3K16FS,LF weighs 2.4 mg (typ.) and is RoHS-compliant.

How does the SSM3K16FS,LF perform in analog switch applications?

The SSM3K16FS,LF performs effectively in analog switch applications due to its low R_DS(ON) flatness (<12 Ω over 0–1.5 V signal range), sub-10 pF C_iss, and symmetrical source-drain structure. Its on-resistance variation introduces <0.1% gain error in audio paths up to 20 kHz, and its 4.5 pF Crss minimizes feedthrough. The SSM3K16FS,LF is commonly used for bidirectional signal routing in sensor interfaces and audio codecs where precision and bandwidth matter.

Is the SSM3K16FS,LF suitable for automotive applications?

No, the SSM3K16FS,LF is not qualified for automotive applications. It lacks AEC-Q101 qualification, has no specified PPAP documentation, and Toshiba explicitly excludes it from "Unintended Use" categories including automotive systems per its Restriction on Product Use notice. For automotive-grade alternatives, consider Toshiba's AEC-Q101-qualified SSMT series or equivalents like the DMN2004LK-7Q. The SSM3K16FS,LF is intended for industrial, consumer, and IoT applications only.

SSM3K16FS,LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id:: 1.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 9.3 pF @ 3 V

FET Feature:: -

Power Dissipation (Max):: 100mW (Ta)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SSM

SSM3K16FS,LF FAQ

1.How can I place an order for SSM3K16FS,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM3K16FS,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM3K16FS,LF reliable?

The price and inventory of SSM3K16FS,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3K16FS,LF is usually 5 days.

3.What payment methods are accepted for SSM3K16FS,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3K16FS,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM3K16FS,LF?

SSM3K16FS,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM3K16FS,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM3K16FS,LF?

For technical support, including SSM3K16FS,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3K16FS,LF requirements.

6.How does Aetrix verify that SSM3K16FS,LF is sourced from the original manufacturer or authorized distributors?

All SSM3K16FS,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3K16FS,LF meets industry standards.

7.What is the process for return or replacement of SSM3K16FS,LF?

All SSM3K16FS,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM3K16FS,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM3K16FS,LF part is unused and in its original packaging.

Return procedure for SSM3K16FS,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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