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Toshiba Semiconductor and Storage SSM3K335R,LF

Name: SSM3K335R,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM3K335R,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM3K335R,LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: SOT-23-3 Flat Leads

Datasheet:: SSM3K335R,LF.pdf

Description:: MOSFET N CH 30V 6A SOT-23F

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Product details

Overview

SSM3K335R,LF from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel enhancement-mode MOSFET in the U-MOS-H process, designed for high-efficiency power switching in compact DC-DC converters and load switches. It delivers R_DS(ON) = 38 mΩ (max) at V_GS = 10 V, supports 30 V V_DSS, and handles 6 A continuous drain current with AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the SSM3K335R,LF datasheet, SSM3K335R,LF pinout, SSM3K335R,LF application, or SSM3K335R,LF equivalent, key selection criteria include gate drive compatibility at 4.5 V, thermal performance on FR4 boards (R_th(ch-a) = 125 °C/W), and low R_DS(ON) trade-offs across V_GS = 4.5 V and 10 V conditions.

Technical Context

This device uses Toshiba's U-MOS-H trench-gate structure to achieve low on-resistance and fast switching with minimal gate charge (Q_g = 2.7 nC typ. at V_GS = 4.5 V). Its 30 V V_DSS rating and 6 A I_D capability suit it for 12 V and 24 V input rail switching in point-of-load regulators.

The SSM3K335R,LF operates with a gate threshold voltage (V_th) of 1.3–2.5 V and exhibits strong transconductance (|Y_fs| = 13–26 S), enabling robust turn-on control under low-voltage gate drive. Its body diode forward voltage is 0.87–1.2 V at 6 A, supporting synchronous rectification or freewheeling in buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports operation up to 24 V nominal input rails with margin for transient spikes.
R_DS(ON) max @ V_GS = 10 V	38 mΩ - Enables <150 mW conduction loss at 6 A, critical for thermally constrained PCBs.
R_DS(ON) max @ V_GS = 4.5 V	56 mΩ - Ensures functional switching with standard logic-level drivers (e.g., microcontroller GPIO).
I_D (DC)	6 A - Rated for continuous load-switching in automotive body electronics and industrial PMICs.
Q_g typ.	2.7 nC - Reduces gate driver power demand and enables >1 MHz switching in high-frequency DC-DC designs.
R_th(ch-a)	125 °C/W - Measured on 25.4 mm × 25.4 mm FR4 board; defines thermal derating for ambient temperatures above 70 °C.
V_th	1.3–2.5 V - Guarantees reliable turn-on with 3.3 V or 5 V logic while avoiding unintended conduction near 0 V.

Pinout & Package

Package: SOT-23F - ultra-small surface-mount package (2.9 mm × 1.3 mm × 0.9 mm), optimized for high-density power management layouts and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal accepting 0–20 V gate-source voltage; requires ESD-safe handling per JEDEC JESD22-A114.
2	Source	Reference node for gate drive and current return path; connected to ground or low-side switch node.
3	Drain	High-side output terminal carrying switched load current; electrically isolated from package tab (no thermal pad).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including body control modules and infotainment power rails.
Low R_DS(ON) at 4.5 V	56 mΩ max ensures efficient operation with standard logic-level gate drivers without level-shifting circuitry.
U-MOS-H trench structure	Delivers superior R_DS(ON) × Q_g figure-of-merit for high-frequency switching efficiency.
ESD-protected gate	HBM rating ≥2 kV (per datasheet note); mandates anti-static handling during PCB assembly and rework.

Applications

Automotive Body Control Module	Industrial DC-DC Converter
Use Scenario: Switching 12 V battery power to interior lighting, door locks, and HVAC actuators. IC Role / Device Role / Timing Role: Low-side load switch controlling current flow to resistive/inductive loads. Use Value: AEC-Q101 qualification and 6 A rating ensure long-term reliability in temperature-cycled vehicle environments.	Use Scenario: High-efficiency synchronous rectifier in non-isolated buck converter for FPGA core voltage regulation. IC Role / Device Role / Timing Role: Power MOSFET in low-side switching position with fast turn-off (t_off = 12 ns typ.) and low Q_gd. Use Value: 56 mΩ R_DS(ON) at 4.5 V enables direct drive from PWM controller outputs, reducing BOM count.
USB-C Power Delivery Load Switch	Smart Home Sensor Node Power Management
Use Scenario: Inrush-current-limited hot-swap switch for 5–20 V USB-C PD power paths. IC Role / Device Role / Timing Role: Single-N-channel MOSFET configured as ideal diode or load switch with external gate control. Use Value: 30 V V_DSS and low C_iss (340 pF) minimize voltage overshoot and enable fast response to fault conditions.	Use Scenario: Battery-powered IoT sensor node requiring ultra-low quiescent current and controlled wake-up sequencing. IC Role / Device Role / Timing Role: High-side or low-side power gate for subsystem isolation (e.g., radio, MCU, sensors). Use Value: 1.3 V minimum V_th allows clean turn-on with 1.8 V or 3.3 V supply rails, minimizing leakage in sleep mode.

Automotive Body Control Module

Industrial DC-DC Converter

Use Scenario: Switching 12 V battery power to interior lighting, door locks, and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side load switch controlling current flow to resistive/inductive loads.

Use Value: AEC-Q101 qualification and 6 A rating ensure long-term reliability in temperature-cycled vehicle environments.

Use Scenario: High-efficiency synchronous rectifier in non-isolated buck converter for FPGA core voltage regulation.

IC Role / Device Role / Timing Role: Power MOSFET in low-side switching position with fast turn-off (t_off = 12 ns typ.) and low Q_gd.

Use Value: 56 mΩ R_DS(ON) at 4.5 V enables direct drive from PWM controller outputs, reducing BOM count.

USB-C Power Delivery Load Switch

Smart Home Sensor Node Power Management

Use Scenario: Inrush-current-limited hot-swap switch for 5–20 V USB-C PD power paths.

IC Role / Device Role / Timing Role: Single-N-channel MOSFET configured as ideal diode or load switch with external gate control.

Use Value: 30 V V_DSS and low C_iss (340 pF) minimize voltage overshoot and enable fast response to fault conditions.

Use Scenario: Battery-powered IoT sensor node requiring ultra-low quiescent current and controlled wake-up sequencing.

IC Role / Device Role / Timing Role: High-side or low-side power gate for subsystem isolation (e.g., radio, MCU, sensors).

Use Value: 1.3 V minimum V_th allows clean turn-on with 1.8 V or 3.3 V supply rails, minimizing leakage in sleep mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LFG-7	R_DS(ON) = 25 mΩ @ 10 V (lower), but only rated for 30 V and lacks AEC-Q101 certification.	Suitable for commercial DC-DC converters; not approved for automotive use.	Select when higher efficiency at 10 V gate drive is prioritized over automotive qualification.
AO3400A	R_DS(ON) = 44 mΩ @ 10 V, 62 mΩ @ 4.5 V; slightly higher R_DS(ON) and no AEC-Q101 validation.	Common in consumer power banks and portable chargers; lower cost but unqualified for automotive.	Choose for cost-sensitive industrial or consumer applications where AEC-Q101 is not required.

Compared with DMN3025LFG-7 and AO3400A, the SSM3K335R,LF provides verified AEC-Q101 compliance and tighter R_DS(ON) tolerance at 4.5 V-making it the preferred choice for automotive body electronics and safety-critical industrial systems where gate drive voltage headroom is limited.

Availability

SSM3K335R,LF is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and smart home sensor node power management requiring stable component supply and long-term lifecycle support.

Supply support for SSM3K335R,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and consumer reliability standards.

The SSM3K335R,LF belongs to Toshiba's U-MOS-H series of low-voltage N-channel MOSFETs, engineered specifically for high-efficiency, space-constrained power switching in automotive and industrial applications where 4.5 V gate drive and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current for the SSM3K335R,LF?

The SSM3K335R,LF is rated for 6 A continuous drain current (I_D) at T_a = 25 °C with proper PCB thermal design (FR4 board, 25.4 mm × 25.4 mm, 645 mm² Cu pad). Derating applies above 70 °C ambient due to its 125 °C/W channel-to-ambient thermal resistance. The SSM3K335R,LF must be used within absolute maximum ratings to maintain reliability over lifetime.

Is the SSM3K335R,LF suitable for automotive applications?

Yes-the SSM3K335R,LF is AEC-Q101 qualified, confirming its suitability for automotive applications such as body control modules, lighting drivers, and power distribution units. This qualification covers stress testing for temperature cycling, humidity, and mechanical shock. The SSM3K335R,LF meets these requirements without requiring additional qualification by end customers.

What is the gate threshold voltage range of the SSM3K335R,LF?

The SSM3K335R,LF has a gate threshold voltage (V_th) range of 1.3 V (min) to 2.5 V (max) at I_D = 0.1 mA. This ensures reliable turn-on with 3.3 V logic and avoids false triggering near ground. The SSM3K335R,LF's V_th remains stable across temperature, supporting consistent switching behavior in automotive and industrial environments.

Does the SSM3K335R,LF have an integrated body diode?

Yes-the SSM3K335R,LF includes an intrinsic body diode with V_DSF = 0.87–1.2 V at I_DR = 6.0 A and V_GS = 0 V. This diode supports freewheeling in inductive loads and synchronous rectification in buck converters. The SSM3K335R,LF's diode recovery characteristics are defined in its dynamic test conditions and must be considered in high-frequency designs.

What package type does the SSM3K335R,LF use?

The SSM3K335R,LF uses the SOT-23F package-a lead-free, RoHS-compliant surface-mount package measuring 2.9 mm × 1.3 mm × 0.9 mm with gull-wing leads. It is optimized for high-density PCB layouts and compatible with standard reflow profiles. The SSM3K335R,LF's SOT-23F footprint enables drop-in replacement for other SOT-23-compatible N-channel MOSFETs with identical pinout (G-S-D).

SSM3K335R,LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVII-H

Package/Case:: SOT-23-3 Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 2.7 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23F

SSM3K335R,LF FAQ

1.How can I place an order for SSM3K335R,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM3K335R,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM3K335R,LF reliable?

The price and inventory of SSM3K335R,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3K335R,LF is usually 5 days.

3.What payment methods are accepted for SSM3K335R,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3K335R,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM3K335R,LF?

SSM3K335R,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM3K335R,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM3K335R,LF?

For technical support, including SSM3K335R,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3K335R,LF requirements.

6.How does Aetrix verify that SSM3K335R,LF is sourced from the original manufacturer or authorized distributors?

All SSM3K335R,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3K335R,LF meets industry standards.

7.What is the process for return or replacement of SSM3K335R,LF?

All SSM3K335R,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM3K335R,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM3K335R,LF part is unused and in its original packaging.

Return procedure for SSM3K335R,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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