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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage SSM3K56CT,L3F

Name: SSM3K56CT,L3F
Brand: Toshiba Semiconductor and Storage
SKU: SSM3K56CT,L3F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM3K56CT,L3F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: SC-101, SOT-883

Datasheet:: SSM3K56CT,L3F.pdf

Description:: MOSFET N-CH 20V 800MA CST3

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Product details

Overview

SSM3K56CT,L3F from Toshiba is a silicon N-channel MOSFET in CST3 package, designed for high-speed switching in low-voltage logic-level drive circuits. It delivers R_DS(ON) = 235 mΩ max at V_GS = 4.5 V, supports 800 mA DC drain current, and operates with 1.5-V gate threshold compatibility - ideal for portable power management and load switching in space-constrained PCBs.

For engineers reviewing the SSM3K56CT,L3F datasheet, SSM3K56CT,L3F pinout, SSM3K56CT,L3F application, or SSM3K56CT,L3F equivalent, key selection criteria include its 1.5-V gate drive capability, low R_DS(ON) across 1.5–4.5 V V_GS, 20-V V_DSS rating, thermal performance on FR4, and CST3 footprint compatibility with automated assembly.

Technical Context

This discrete MOSFET uses planar silicon technology optimized for logic-level gate drive in battery-powered systems. Its channel temperature limit of 150 °C and 500 mW power dissipation are specified for mounting on a standard 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 645 mm² copper pad - defining its thermal boundary conditions.

Static characteristics include V_th = 0.4–1.0 V (typ. 0.7 V), enabling reliable turn-on from 1.5-V microcontroller I/O. Dynamic parameters - C_iss = 55 pF, t_on = 5.5 ns, t_off = 8.5 ns - support clean switching at frequencies up to several MHz in DC-DC converters and LED drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - maximum drain-source voltage for 3.3 V/5 V rail applications without derating
R_DS(ON) @ V_GS = 4.5 V	235 mΩ max - enables <190 mW conduction loss at 800 mA, suitable for compact load switches
V_th	0.4–1.0 V - ensures full enhancement with 1.5-V logic outputs, reducing gate driver complexity
I_D (DC)	800 mA - supports moderate-current loads like sensors, LEDs, and peripheral enable rails
C_iss	55 pF typ. - minimizes gate drive energy and improves switching efficiency in high-frequency operation
t_on/t_off	5.5 ns / 8.5 ns - enables sub-100 ns total switching transitions for noise-sensitive digital control
P_D (FR4)	500 mW - defines thermal design margin when mounted on standard PCB with defined copper area

Pinout & Package

SSM3K56CT,L3F is housed in the ultra-small CST3 surface-mount package (0.8 × 0.6 × 0.37 mm, 0.75 mg), optimized for high-density layouts and reflow-compatible assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Logic-level input controlling channel conduction; requires ESD-safe handling per Toshiba's anti-static precautions
2	Source	Reference node for gate drive and current return path; internally connected to substrate in standard N-channel configuration
3	Drain	High-side or low-side switched output terminal; carries full load current and must be routed with thermal relief on PCB

Key Features

Feature	Design Value
1.5-V gate drive compatibility	Enables direct interface with 1.5-V/1.8-V microcontrollers and ASIC I/O without level-shifting circuitry
Low R_DS(ON) down to 1.5 V V_GS	840 mΩ max at 1.5 V allows functional switching even under brown-out or battery sag conditions
Ultra-compact CST3 footprint	0.48 mm² board area saves space in wearables, hearing aids, and miniature IoT sensor nodes
Fast switching with low C_iss	55 pF input capacitance reduces gate charge demand, lowering driver power and propagation delay
ESD-sensitive gate structure	Requires strict anti-static handling during assembly and testing per Toshiba's handling precautions

Applications

Portable Power Switching	Low-Voltage Load Control
Use Scenario: Enabling/disabling power to Bluetooth LE modules, PMIC rails, or sensor subsystems in coin-cell-powered devices. IC Role / Device Role / Timing Role: Low-side load switch managing 1.8–3.3 V supply domains with minimal quiescent current and fast response. Use Value: 235 mΩ R_DS(ON) limits voltage drop to <190 mV at 800 mA, preserving battery runtime and signal integrity.	Use Scenario: Controlling backlight LEDs or status indicators in smartwatches and medical patches. IC Role / Device Role / Timing Role: Constant-current or PWM-driven switch regulating LED brightness with precise on/off timing. Use Value: 5.5 ns turn-on time ensures crisp PWM edges at >1 MHz, eliminating visible flicker and improving dimming resolution.
Logic-Level Interface Buffer	USB Peripherals Power Gating
Use Scenario: Isolating 1.5-V FPGA I/O banks from higher-voltage peripherals during configuration or sleep states. IC Role / Device Role / Timing Role: Bidirectional signal isolation switch activated by core logic voltage, not external supply. Use Value: 0.4–1.0 V V_th guarantees robust turn-on margin over process/voltage/temperature variation at 1.5 V.	Use Scenario: Selectively powering USB-C accessory detection circuits or Type-C port controllers in host devices. IC Role / Device Role / Timing Role: High-reliability, low-leakage power gate compliant with USB PD specification standby current limits. Use Value: IDSS ≤ 1 µA at 16 V ensures <1 µA off-state leakage, meeting USB battery life requirements for always-on ports.

Portable Power Switching

Low-Voltage Load Control

Use Scenario: Enabling/disabling power to Bluetooth LE modules, PMIC rails, or sensor subsystems in coin-cell-powered devices.

IC Role / Device Role / Timing Role: Low-side load switch managing 1.8–3.3 V supply domains with minimal quiescent current and fast response.

Use Value: 235 mΩ R_DS(ON) limits voltage drop to <190 mV at 800 mA, preserving battery runtime and signal integrity.

Use Scenario: Controlling backlight LEDs or status indicators in smartwatches and medical patches.

IC Role / Device Role / Timing Role: Constant-current or PWM-driven switch regulating LED brightness with precise on/off timing.

Use Value: 5.5 ns turn-on time ensures crisp PWM edges at >1 MHz, eliminating visible flicker and improving dimming resolution.

Logic-Level Interface Buffer

USB Peripherals Power Gating

Use Scenario: Isolating 1.5-V FPGA I/O banks from higher-voltage peripherals during configuration or sleep states.

IC Role / Device Role / Timing Role: Bidirectional signal isolation switch activated by core logic voltage, not external supply.

Use Value: 0.4–1.0 V V_th guarantees robust turn-on margin over process/voltage/temperature variation at 1.5 V.

Use Scenario: Selectively powering USB-C accessory detection circuits or Type-C port controllers in host devices.

IC Role / Device Role / Timing Role: High-reliability, low-leakage power gate compliant with USB PD specification standby current limits.

Use Value: IDSS ≤ 1 µA at 16 V ensures <1 µA off-state leakage, meeting USB battery life requirements for always-on ports.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AO3400A	R_DS(ON) = 28 mΩ @ 10 V but 45 mΩ @ 2.5 V; larger SOT-23 package (2.9 × 1.6 mm)	Higher current capacity (5.7 A) but less suited for 1.5-V drive and ultra-dense layouts	Choose AO3400A only if >2 A load current and 2.5 V+ gate drive are guaranteed.
DMN1019USN-7	R_DS(ON) = 190 mΩ @ 2.5 V; same CST3 package; V_DSS = 12 V	Limited to 12 V systems; superior R_DS(ON) at mid-V_GS, but lower breakdown margin	Select DMN1019USN-7 where 12 V rail and tighter R_DS(ON) at 2.5 V outweigh need for 20 V headroom.

Compared with AO3400A and DMN1019USN-7, the SSM3K56CT,L3F uniquely balances 1.5-V gate compatibility, 20-V rating, and CST3 size - making it optimal for miniaturized 1.5–3.3 V systems where both voltage margin and board area are constrained.

Availability

SSM3K56CT,L3F is available at Aetrix Electronics and suitable for portable power switching, low-voltage load control, and logic-level interface buffering requiring stable component supply across consumer electronics, medical wearables, and industrial sensor nodes.

Supply support for SSM3K56CT,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for automotive, industrial, and consumer applications.

The SSM3K56CT,L3F belongs to Toshiba's SSM series of small-signal MOSFETs engineered specifically for ultra-low-voltage, high-density switching in battery-operated electronics.

FAQ

What is the maximum continuous drain current for SSM3K56CT,L3F?

The SSM3K56CT,L3F supports 800 mA DC drain current when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm with 645 mm² Cu pad). This rating assumes T_a = 25 °C and accounts for thermal resistance to ambient; actual current must be derated at elevated temperatures or with reduced copper area. The SSM3K56CT,L3F datasheet specifies this condition explicitly in Absolute Maximum Ratings.

Does SSM3K56CT,L3F support 1.5-V gate drive in practice?

Yes, the SSM3K56CT,L3F is characterized for operation down to 1.5 V V_GS, with R_DS(ON) = 840 mΩ (max) at that voltage. Its V_th range of 0.4–1.0 V ensures reliable turn-on from 1.5-V logic sources. The SSM3K56CT,L3F datasheet confirms this in both Static Characteristics and Features sections, including test conditions at V_GS = 1.5 V.

What is the package type and pin configuration of SSM3K56CT,L3F?

The SSM3K56CT,L3F uses the CST3 package - a 3-pin, ultra-miniature surface-mount outline measuring 0.8 × 0.6 × 0.37 mm. Pin 1 is Gate, Pin 2 is Source, and Pin 3 is Drain, as confirmed in the "Packaging and Pin Configuration" section of the official Toshiba datasheet for SSM3K56CT,L3F.

Is SSM3K56CT,L3F suitable for high-frequency switching applications?

Yes, the SSM3K56CT,L3F supports high-frequency operation with t_on = 5.5 ns and t_off = 8.5 ns (typ.), and C_iss = 55 pF (typ.). These values enable clean switching at multi-MHz rates in DC-DC regulators and LED drivers. The SSM3K56CT,L3F datasheet validates these dynamic parameters under pulsed conditions with defined test circuits.

What thermal considerations apply to SSM3K56CT,L3F in PCB layout?

The SSM3K56CT,L3F power dissipation rating of 500 mW assumes mounting on an FR4 board with specific dimensions (25.4 mm × 25.4 mm × 1.6 mm) and copper pad area (645 mm²). Thermal performance degrades significantly with smaller pads or non-FR4 substrates. The SSM3K56CT,L3F datasheet emphasizes that R_th(ch-a) varies with board construction - so layout must replicate the reference condition or perform thermal simulation.

SSM3K56CT,L3F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVII-H

Package/Case:: SC-101, SOT-883

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 1 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 55 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: 150°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CST3

SSM3K56CT,L3F FAQ

1.How can I place an order for SSM3K56CT,L3F through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM3K56CT,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM3K56CT,L3F reliable?

The price and inventory of SSM3K56CT,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM3K56CT,L3F is usually 5 days.

3.What payment methods are accepted for SSM3K56CT,L3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM3K56CT,L3F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM3K56CT,L3F?

SSM3K56CT,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM3K56CT,L3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM3K56CT,L3F?

For technical support, including SSM3K56CT,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM3K56CT,L3F requirements.

6.How does Aetrix verify that SSM3K56CT,L3F is sourced from the original manufacturer or authorized distributors?

All SSM3K56CT,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM3K56CT,L3F meets industry standards.

7.What is the process for return or replacement of SSM3K56CT,L3F?

All SSM3K56CT,L3F units undergo pre-shipment inspection (PSI). If there is an issue with SSM3K56CT,L3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM3K56CT,L3F part is unused and in its original packaging.

Return procedure for SSM3K56CT,L3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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