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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage SSM4K27CTTPL3

Name: SSM4K27CTTPL3
Brand: Toshiba Semiconductor and Storage
SKU: SSM4K27CTTPL3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM4K27CTTPL3

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 4-SMD, No Lead

Datasheet:: SSM4K27CTTPL3.pdf

Description:: MOSFET N-CH 20V 500MA CST4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SSM4K27CTTPL3 from Toshiba is a silicon N-channel MOSFET in the U-MOSⅢ process, designed for low-voltage switching applications. It features a 20 V drain-source breakdown voltage, maximum R_DS(ON) of 205 mΩ at V_GS = 4.0 V, and operates with gate threshold voltage between 0.5 V and 1.1 V - enabling efficient control in compact DC-DC converters and load switches.

For engineers reviewing the SSM4K27CTTPL3 datasheet, SSM4K27CTTPL3 pinout, SSM4K27CTTPL3 application, or SSM4K27CTTPL3 equivalent, key selection criteria include its 400 mW FR4-board power dissipation rating, low-input-capacitance (174 pF C_iss) for fast switching, and guaranteed operation across −55°C to 150°C storage temperature range.

Technical Context

This discrete MOSFET uses Toshiba's U-MOSⅢ trench-gate structure to achieve low on-resistance and high cell density in a small surface-mount package. Its gate threshold voltage (0.5–1.1 V) and sub-1-V turn-on capability support direct interfacing with 1.8 V logic, while R_DS(ON) remains under 390 mΩ even at V_GS = 1.8 V.

Switching performance is characterized by 10 ns turn-on and 12 ns turn-off times under standard test conditions (V_DD = 10 V, I_D = 0.25 A, R_G = 4.7 Ω), with capacitance values (C_iss = 174 pF, C_rss = 25 pF, C_oss = 31 pF) optimized for high-frequency operation in portable power management circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - supports input rails up to 18 V in battery-powered systems without derating
R_DS(ON) max @ V_GS = 4.0 V	205 mΩ - enables ≤500 mW conduction loss at 0.5 A continuous drain current
I_D (DC)	0.5 A - suitable for low-power load switching and signal routing in space-constrained PCBs
V_th range	0.5–1.1 V - ensures reliable enhancement-mode turn-on with 1.8 V/2.5 V/3.3 V microcontroller GPIO
C_iss	174 pF - limits gate drive power requirement and supports >1 MHz PWM operation
P_D (FR4)	400 mW - defined on 25.4 × 25.4 × 1.6 mm board with 645 mm² copper pad
T_stg	−55°C to +150°C - compatible with automotive cabin and industrial ambient environments

Pinout & Package

SSM4K27CTTPL3 is housed in the ultra-small 2-1M1A surface-mount package (1.2 × 0.8 × 0.45 mm, 1.1 mg typical weight), with drain terminals on pins 3 and 4, source on pin 2, and gate on pin 1 - confirmed per Toshiba's official electrode layout diagram.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring <±1 μA leakage; driven directly by 1.8 V logic with margin
2	Source	Reference node for gate drive; tied to system ground or low-side return path
3 & 4	Drain	Parallel-connected output terminals; handle full load current and dissipate heat via PCB copper

Key Features

Feature	Design Value
U-MOSⅢ trench-gate process	Enables 205 mΩ R_DS(ON) in 1.2 × 0.8 mm footprint - critical for miniaturized power stages
Low V_th with tight distribution	0.5–1.1 V range ensures consistent turn-on across production lots without external level-shifting
Low Crss (25 pF)	Minimizes Miller effect during switching - improves noise immunity in high-dV/dt environments
High channel temperature rating	150°C T_ch allows sustained operation in thermally dense layouts without forced cooling

Applications

USB Port Power Switching	IoT Sensor Node Load Control
Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral devices in portable hubs or docking stations. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with minimal voltage drop. Use Value: 205 mΩ R_DS(ON) limits dropout to <100 mV at 0.5 A, preserving USB compliance under worst-case V_GS.	Use Scenario: Isolating sensor supply rails during sleep mode in battery-operated environmental monitors. IC Role / Device Role / Timing Role: High-efficiency power gate activated by MCU GPIO to reduce quiescent current. Use Value: Sub-1 μA gate leakage and 0.5 V V_th ensure reliable turn-off and zero static power draw in deep-sleep states.
Wearable Display Backlight Dimming	Medical Patch Device Battery Protection
Use Scenario: PWM-controlled current sink for white LED backlight in compact OLED displays. IC Role / Device Role / Timing Role: Fast-switching low-R_DS(ON) switch modulating LED current at 1–5 kHz. Use Value: 10 ns t_on/12 ns t_off and 174 pF C_iss enable clean PWM edges with <5% duty-cycle distortion.	Use Scenario: Overcurrent cutoff in disposable medical patches using coin-cell batteries. IC Role / Device Role / Timing Role: Primary protection switch triggered by analog comparator or dedicated IC. Use Value: 20 V V_DSS and 150°C T_ch rating allow safe interruption of fault currents without thermal runaway.

USB Port Power Switching

IoT Sensor Node Load Control

Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral devices in portable hubs or docking stations.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with minimal voltage drop.

Use Value: 205 mΩ R_DS(ON) limits dropout to <100 mV at 0.5 A, preserving USB compliance under worst-case V_GS.

Use Scenario: Isolating sensor supply rails during sleep mode in battery-operated environmental monitors.

IC Role / Device Role / Timing Role: High-efficiency power gate activated by MCU GPIO to reduce quiescent current.

Use Value: Sub-1 μA gate leakage and 0.5 V V_th ensure reliable turn-off and zero static power draw in deep-sleep states.

Wearable Display Backlight Dimming

Medical Patch Device Battery Protection

Use Scenario: PWM-controlled current sink for white LED backlight in compact OLED displays.

IC Role / Device Role / Timing Role: Fast-switching low-R_DS(ON) switch modulating LED current at 1–5 kHz.

Use Value: 10 ns t_on/12 ns t_off and 174 pF C_iss enable clean PWM edges with <5% duty-cycle distortion.

Use Scenario: Overcurrent cutoff in disposable medical patches using coin-cell batteries.

IC Role / Device Role / Timing Role: Primary protection switch triggered by analog comparator or dedicated IC.

Use Value: 20 V V_DSS and 150°C T_ch rating allow safe interruption of fault currents without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AO3400	R_DS(ON) = 28 mΩ @ V_GS = 10 V; higher drive voltage required for optimal R_DS(ON)	Better efficiency above 3.3 V logic, but less suitable for 1.8 V direct drive	Choose AO3400 only if gate drive ≥3.3 V is available and lower R_DS(ON) justifies larger SO-23 footprint
DMN2004LK-7	R_DS(ON) = 220 mΩ @ V_GS = 2.5 V; similar 20 V rating and 1.2 × 0.8 mm DFN package	Near-identical form factor and low-V_GS performance; slightly higher R_DS(ON) at 1.8 V	DMN2004LK-7 offers comparable 1.8 V drive capability and same footprint - viable second-source option

Compared with AO3400 and DMN2004LK-7, the SSM4K27CTTPL3 delivers tighter V_th distribution for robust 1.8 V operation and lower C_iss, reducing gate drive losses in high-frequency switching - making it preferable for ultra-low-power, size-constrained designs where gate voltage headroom is limited.

Availability

SSM4K27CTTPL3 is available at Aetrix Electronics and suitable for USB power switching, IoT sensor node load control, and wearable display backlight dimming requiring stable component supply and long-term manufacturability.

Supply support for SSM4K27CTTPL3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for consumer, industrial, and automotive markets.

The SSM4K27CTTPL3 belongs to Toshiba's U-MOSⅢ low-voltage MOSFET family, engineered specifically for space-constrained, battery-powered applications demanding low gate-threshold operation and minimal on-resistance in sub-2 mm packages.

FAQ

What is the maximum continuous drain current for SSM4K27CTTPL3 at 25°C?

The SSM4K27CTTPL3 has a maximum DC drain current (I_D) of 0.5 A at T_a = 25°C when mounted on a standard FR4 board (25.4 × 25.4 × 1.6 mm, 645 mm² Cu pad). This rating assumes no additional heatsinking and accounts for the device's 400 mW power dissipation limit and thermal resistance to ambient.

Does SSM4K27CTTPL3 support 1.8 V logic-level gate drive?

Yes, the SSM4K27CTTPL3 supports 1.8 V logic-level gate drive: its gate threshold voltage (V_th) ranges from 0.5 V to 1.1 V, and R_DS(ON) is specified at 390 mΩ max with V_GS = 1.8 V and I_D = 0.10 A. This ensures reliable enhancement-mode turn-on with modern low-voltage MCUs and PMICs.

What is the package type and dimensions of SSM4K27CTTPL3?

The SSM4K27CTTPL3 uses Toshiba's 2-1M1A package - a 4-pin, bottom-terminal DFN measuring 1.2 mm × 0.8 mm × 0.45 mm (typ.), with pins 3 and 4 both connected to the drain. Its ultra-compact size and 1.1 mg weight make it suitable for wearables and ultra-thin portable electronics.

How does the R_DS(ON) of SSM4K27CTTPL3 vary with temperature?

R_DS(ON) of the SSM4K27CTTPL3 increases with junction temperature: at I_D = 0.1 A and V_GS = 1.8 V, R_DS(ON) rises from ~250 mΩ at 25°C to ~400 mΩ at 125°C, per Toshiba's published R_DS(ON) vs. T_a curve. Designers must account for this positive temperature coefficient in thermal margining.

Is SSM4K27CTTPL3 RoHS compliant and halogen-free?

Yes, the SSM4K27CTTPL3 meets RoHS Directive 2011/65/EU requirements and is halogen-free per Toshiba's environmental compliance documentation. Full material declarations and test reports are available upon request through authorized Toshiba distributors or Aetrix Electronics' technical support team.

SSM4K27CTTPL3 Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIII

Package/Case:: 4-SMD, No Lead

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4V

Rds On (Max) @ Id, Vgs:: 205mOhm @ 250mA, 4V

Vgs(th) (Max) @ Id:: 1.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 174 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 400mW (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CST4 (1.2x0.8)

SSM4K27CTTPL3 FAQ

1.How can I place an order for SSM4K27CTTPL3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM4K27CTTPL3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM4K27CTTPL3 reliable?

The price and inventory of SSM4K27CTTPL3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM4K27CTTPL3 is usually 5 days.

3.What payment methods are accepted for SSM4K27CTTPL3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM4K27CTTPL3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM4K27CTTPL3?

SSM4K27CTTPL3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM4K27CTTPL3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM4K27CTTPL3?

For technical support, including SSM4K27CTTPL3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM4K27CTTPL3 requirements.

6.How does Aetrix verify that SSM4K27CTTPL3 is sourced from the original manufacturer or authorized distributors?

All SSM4K27CTTPL3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM4K27CTTPL3 meets industry standards.

7.What is the process for return or replacement of SSM4K27CTTPL3?

All SSM4K27CTTPL3 units undergo pre-shipment inspection (PSI). If there is an issue with SSM4K27CTTPL3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM4K27CTTPL3 part is unused and in its original packaging.

Return procedure for SSM4K27CTTPL3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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