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Toshiba Semiconductor and Storage SSM5H90ATU,LF
- Part No.:
- SSM5H90ATU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 5-SMD, Flat Leads
- Datasheet:
-
SSM5H90ATU,LF.pdf
- Description:
- MOSFET N-CH 20V 2.4A UFV
- Quantity:
- Payment:
- Shipping:
Inventory:635
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Product details
Overview
SSM5H90ATU,LF from Toshiba Electronic Devices & Storage Corporation is a composite N-channel MOSFET and Schottky diode in a single UFV package, designed for high-speed switching in compact DC-DC converters. It delivers RDS(ON) = 65 mΩ (max) at VGS = 4.0 V, supports 2.5-V gate drive, and integrates a low-leakage diode with IR = 0.1 µA (typ.) at VR = 30 V - enabling efficient synchronous rectification in portable power supplies.
For engineers reviewing the SSM5H90ATU,LF datasheet, SSM5H90ATU,LF pinout, SSM5H90ATU,LF application, or SSM5H90ATU,LF equivalent, key selection criteria include its dual-function integration, 2.5-V logic-level gate compatibility, 20-V drain-source rating, and thermal performance on standard FR-4 boards - critical for space-constrained, battery-powered systems requiring fast turn-on/turn-off and low conduction loss.
Technical Context
The SSM5H90ATU,LF integrates a planar epitaxial N-channel MOSFET and a Schottky diode sharing common source and cathode terminals, forming a monolithic half-bridge-compatible switch-diode pair. Its gate threshold voltage (Vth = 0.5–1.2 V) enables reliable turn-on with low-voltage controllers, while the diode's low reverse recovery time (trr = 1.6 ns typ.) minimizes switching losses during freewheeling.
Thermal design relies on the UFV package's 7.0 mg mass and specified Rth(ch-a) under defined PCB conditions (25.4 mm × 25.4 mm × 1.6 mm FR-4, 645 mm² Cu pad), with maximum channel temperature limited to 150 °C and junction temperature to 125 °C. Power dissipation is rated at 0.5 W (continuous) and 0.8 W (10 s pulse), requiring careful layout for heat spreading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage, suitable for 12-V input rail applications with margin. |
| RDS(ON) @ VGS = 4.0 V | 65 mΩ (max) - Low conduction loss enabling <1.5 W dissipation at 2.4 A DC current. |
| VGS(th) | 0.5–1.2 V - Ensures full enhancement with 2.5-V microcontroller GPIOs without level-shifting. |
| trr (diode) | 1.6 ns (typ.) - Ultra-fast recovery reduces switching noise and EMI in high-frequency (>1 MHz) converters. |
| IO (diode) | 100 mA (avg.) - Supports continuous freewheeling current in low-power buck regulators and LED drivers. |
| Ciss | 200 pF (typ.) - Low input capacitance enables fast gate charging with minimal driver strength requirement. |
| PD (continuous) | 0.5 W - Requires thermal pad design on FR-4 board to maintain Tch ≤ 150 °C under load. |
Pinout & Package
SSM5H90ATU,LF uses the ultra-small UFV surface-mount package (7.0 mg, dimensions per Toshiba spec), optimized for high-density PCB layouts. Pin assignments are validated per Toshiba Rev.3.0 datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Controls MOSFET channel; accepts 2.5-V logic-level signals directly from MCU or PWM controller. |
| 2 | Source | Common source node for MOSFET; electrically tied to cathode of integrated Schottky diode. |
| 3 | Anode | Diode anode terminal; connects to switch node in buck converter topology for freewheeling path. |
| 4 | Cathode | Diode cathode; internally connected to Source (Pin 2), forming common reference for both devices. |
| 5 | Drain | MOSFET drain output; handles up to 2.4 A DC and 4.8 A pulsed current in switching applications. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated MOSFET + Schottky diode | Reduces component count and board area by replacing discrete switch/diode pairs in buck and boost converters. |
| 2.5-V gate drive compatibility | Eliminates need for gate driver ICs when paired with low-voltage MCUs or PMICs, simplifying power stage design. |
| Low RDS(ON) at low VGS | 89 mΩ (max) at VGS = 2.5 V ensures stable on-resistance even with marginal gate drive margins. |
| Ultra-low diode reverse leakage | 0.1 µA (typ.) at VR = 30 V minimizes standby power loss in always-on battery management circuits. |
| ESD-sensitive MOSFET structure | Requires anti-static handling per Toshiba guidelines to prevent latent gate oxide damage during assembly. |
Applications
| Portable USB-C PD Adapters | Wearable Device Power Management |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 5–20 W USB-C power adapters operating at 500 kHz–1 MHz switching frequency. IC Role / Device Role / Timing Role: Integrated MOSFET acts as active rectifier; diode provides body-diode fallback during dead-time, ensuring zero-voltage switching. Use Value: Achieves >94% efficiency at light loads due to low RDS(ON) and fast trr, meeting DOE VI and CoC Tier 2 requirements. |
Use Scenario: Output stage of ultra-compact buck converter powering Bluetooth SoCs and sensors in smartwatches and hearables. IC Role / Device Role / Timing Role: Dual-function device replaces separate MOSFET and Schottky in 3.3-V/1.8-V LDO-replacement architectures. Use Value: Reduces BOM count by one component and saves >1.2 mm² PCB area versus discrete solution, critical for sub-10 mm² modules. |
| IoT Edge Node Battery Chargers | Low-Power Industrial Sensors |
Use Scenario: Linear charger front-end with reverse-polarity protection and load-switching in Li-ion battery-backed sensor nodes. IC Role / Device Role / Timing Role: MOSFET functions as ideal diode controller; integrated Schottky blocks reverse current during battery discharge. Use Value: Enables <1 µA quiescent current system design via ultra-low IR, extending shelf life of sealed industrial deployments. |
Use Scenario: Power path control in explosion-proof wireless sensor transmitters operating in hazardous environments. IC Role / Device Role / Timing Role: MOSFET isolates main supply from backup coin cell; diode prevents backfeed during brownout events. Use Value: Maintains functional safety integrity with guaranteed 20-V VDSS and 125 °C Tj rating under ambient extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar MOSFET+diode composite applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS62260DRVR | Monolithic buck converter IC with internal switch; no discrete diode - differs fundamentally in integration level and function. | Replaces entire power stage vs. discrete component substitution; requires redesign of feedback and compensation. | Choose only if system-level integration (not component-level replacement) is acceptable and higher BOM cost is justified. |
| RB050M-30 | Standalone Schottky diode (30 V, 0.5 A); no MOSFET - lacks switching capability and gate drive interface. | Cannot perform active rectification or load switching; only suitable as passive flyback path. | Select only when MOSFET functionality is unnecessary and board space allows separate placement of switch and diode. |
Compared with TPS62260DRVR and RB050M-30, the SSM5H90ATU,LF uniquely offers co-packaged, thermally coupled MOSFET and Schottky diode with shared source/cathode - enabling true synchronous rectification in discrete topologies without layout-induced timing skew or thermal mismatch.
Availability
SSM5H90ATU,LF is available at Aetrix Electronics and suitable for portable USB-C PD adapters, wearable device power management, IoT edge node battery chargers, and low-power industrial sensors requiring stable component supply and long-term manufacturability.
Supply support for SSM5H90ATU,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures semiconductor components for power management, motor control, and signal processing applications, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The SSM5H90ATU,LF belongs to Toshiba's SSM series of composite discrete devices, engineered specifically for miniaturized DC-DC conversion in battery-powered electronics where footprint, thermal coupling, and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for the SSM5H90ATU,LF?
The SSM5H90ATU,LF has a maximum continuous drain current (ID) of 2.4 A at Ta = 25 °C, derating linearly above that ambient temperature. This rating assumes proper PCB thermal management per Toshiba's specified 25.4 mm × 25.4 mm FR-4 board with 645 mm² copper pad. Exceeding this current without adequate heatsinking risks exceeding the 150 °C channel temperature limit.
Does the SSM5H90ATU,LF support 1.8-V gate drive?
No - the SSM5H90ATU,LF is not characterized or guaranteed for reliable operation at 1.8-V gate drive. Its gate threshold voltage range is 0.5–1.2 V, but RDS(ON) rises significantly below VGS = 2.5 V. Toshiba specifies RDS(ON) = 89 mΩ (max) only at VGS = 2.5 V; operation at 1.8 V may result in excessive conduction loss and thermal instability. Use only with ≥2.5-V logic-level sources.
How is the diode in the SSM5H90ATU,LF electrically connected to the MOSFET?
In the SSM5H90ATU,LF, the Schottky diode's cathode is internally bonded to Pin 2 (Source), and its anode is assigned to Pin 3. This creates a common-source configuration where the MOSFET's source and diode's cathode share the same terminal - enabling direct use in buck converter synchronous rectifier configurations without external wiring between source and cathode.
Can the SSM5H90ATU,LF be used in automotive applications?
The SSM5H90ATU,LF is not qualified to AEC-Q101 or automotive-grade reliability standards. Toshiba explicitly restricts its use in automotive equipment per the "RESTRICTIONS ON PRODUCT USE" section of the datasheet. It is intended for commercial and industrial applications only - such as consumer portables and IoT sensors - where ambient temperature remains within –55 to +125 °C and no safety-critical failure modes are present.
What is the thermal resistance from channel to ambient (Rth(ch-a)) for the SSM5H90ATU,LF?
Toshiba does not specify a fixed Rth(ch-a) value for the SSM5H90ATU,LF because it varies with PCB layout. The datasheet defines power dissipation limits (0.5 W continuous) under test conditions: mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR-4 board with 645 mm² copper pad. Designers must calculate actual Rth(ch-a) using thermal simulation or measurement based on their specific board stack-up and copper area.
SSM5H90ATU,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 5-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 1.5A, 4V
- Vgs(th) (Max) @ Id:
- 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.2 nC @ 4 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UFV
SSM5H90ATU,LF FAQ
1.How can I place an order for SSM5H90ATU,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM5H90ATU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM5H90ATU,LF reliable?
The price and inventory of SSM5H90ATU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM5H90ATU,LF is usually 5 days.
3.What payment methods are accepted for SSM5H90ATU,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM5H90ATU,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM5H90ATU,LF?
SSM5H90ATU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM5H90ATU,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM5H90ATU,LF?
For technical support, including SSM5H90ATU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM5H90ATU,LF requirements.
6.How does Aetrix verify that SSM5H90ATU,LF is sourced from the original manufacturer or authorized distributors?
All SSM5H90ATU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM5H90ATU,LF meets industry standards.
7.What is the process for return or replacement of SSM5H90ATU,LF?
All SSM5H90ATU,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM5H90ATU,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM5H90ATU,LF part is unused and in its original packaging.
Return procedure for SSM5H90ATU,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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