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Toshiba Semiconductor and Storage SSM5N15FE(TE85L,F)
- Part No.:
- SSM5N15FE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- SOT-553
- Datasheet:
-
SSM5N15FE(TE85L,F).pdf
- Description:
- MOSFET N-CH 30V 100MA ESV
- Quantity:
- Payment:
- Shipping:
Inventory:2,105
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Product details
Overview
SSM5N15FE(TE85L,F) from TOSHIBA is a dual-channel silicon N-channel MOSFET in a 5-pin SOT-363 (SC-88) package, designed for high-speed analog and digital switching. It delivers RDS(on) ≤ 4.0 Ω at VGS = 4 V, supports 30 V VDS, 100 mA continuous drain current, and operates across −55°C to 150°C ambient range - ideal for compact signal routing in portable audio and interface multiplexing.
For engineers reviewing the SSM5N15FE(TE85L,F) datasheet, SSM5N15FE(TE85L,F) pinout, SSM5N15FE(TE85L,F) application, or SSM5N15FE(TE85L,F) equivalent, key selection criteria include guaranteed low RDS(on) at 2.5 V drive, dual-gate isolation, sub-10 pF input capacitance, and JEITA-compliant thermal derating on FR4 boards.
Technical Context
This dual-NMOS device integrates two independent enhancement-mode transistors sharing no internal connection - Q1 and Q2 operate with fully isolated source, gate, and drain terminals. Each channel exhibits Vth between 0.8 V and 1.5 V, enabling reliable turn-on from 2.5 V logic while maintaining <1 μA IDSS at 30 V VDS.
Switching performance is characterized by ton = 50 ns and toff = 180 ns under 5 V drive into 10 mA load, with Ciss = 7.8 pF and Crss = 3.6 pF ensuring minimal feedthrough in analog switch configurations. The device uses planar silicon process with trench-assisted channel design optimized for low charge and fast transition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports rail-to-rail switching up to 3.3 V/5 V systems without breakdown risk |
| RDS(on) max @ VGS = 4 V | 4.0 Ω - enables <100 mV drop at 25 mA, critical for low-loss analog signal paths |
| RDS(on) max @ VGS = 2.5 V | 7.0 Ω - ensures functional switching down to 2.5 V logic, compatible with modern low-voltage MCUs |
| ID continuous | 100 mA - sufficient for LED drivers, sensor biasing, and GPIO-controlled loads |
| Ciss | 7.8 pF - minimizes capacitive loading on high-impedance sources in multiplexer applications |
| ton/toff | 50 / 180 ns - supports >1 MHz switching in digital enable/control circuits |
| PD (FR4 board) | 150 mW - defines safe power handling with standard PCB copper pad layout (0.135 mm² × 5) |
Pinout & Package
SSM5N15FE(TE85L,F) uses the JEITA-standardized 5-pin SOT-363 (SC-88) surface-mount package, measuring 2.0 × 1.25 × 0.9 mm, with gull-wing leads and 0.65 mm pitch. Thermal resistance θJA is rated at 833°C/W when mounted per JEDEC JESD51-3 guidelines on FR4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Q1 Source) | Source terminal of first MOSFET | Common reference node for Q1 channel; tied to ground or local return path |
| 2 (Q1 Drain) | Drain terminal of first MOSFET | Signal output or load connection point for Q1; electrically isolated from Q2 |
| 3 (Q2 Source) | Source terminal of second MOSFET | Independent reference node for Q2; allows separate grounding or biasing schemes |
| 4 (Q2 Drain) | Drain terminal of second MOSFET | Second independent signal path; enables true dual-switch functionality |
| 5 (Gate) | Shared gate input | Single control line drives both MOSFETs simultaneously; no internal gate splitting |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel switches | Two fully isolated MOSFETs in one package reduce board area by ~40% vs discrete solutions |
| Low threshold voltage (0.8–1.5 V) | Enables direct drive from 1.8 V/2.5 V/3.3 V GPIO without level-shifting circuitry |
| Ultra-low input capacitance (7.8 pF) | Preserves signal integrity in audio and sensor front-end switching with <0.1% crosstalk |
| Guaranteed RDS(on) at 2.5 V | Ensures predictable on-resistance in battery-powered systems where supply voltage droops |
| JEITA-qualified SOT-363 footprint | Supports automated reflow assembly and IPC-A-610 Class 2/3 compliance |
Applications
| USB Data Line Switching | Portable Audio Multiplexer |
|---|---|
Use Scenario: Routing USB D+/D− signals between host and peripheral ports in dual-role devices. IC Role / Device Role / Timing Role: Bidirectional analog switch controlling differential data paths with minimal insertion loss. Use Value: RDS(on) ≤ 4.0 Ω and Ciss = 7.8 pF maintain USB 2.0 signal integrity up to 480 Mbps without equalization. | Use Scenario: Selecting between microphone inputs or speaker outputs in Bluetooth headsets and wearables. IC Role / Device Role / Timing Role: Low-distortion analog switch isolating AC-coupled audio paths with DC blocking capability. Use Value: Vth range and low Crss (3.6 pF) prevent audible pop/click during channel transitions. |
| GPIO-Driven Load Enable | Sensor Signal Conditioning |
Use Scenario: Enabling/disabling power to external sensors or LEDs using MCU GPIO pins. IC Role / Device Role / Timing Role: Low-side load switch providing controlled current path with fast response. Use Value: ton/toff of 50/180 ns allows precise timing control for pulsed operation in duty-cycled systems. | Use Scenario: Isolating thermistor or RTD measurement paths from shared reference rails in multi-sensor nodes. IC Role / Device Role / Timing Role: Precision analog switch minimizing offset error and leakage-induced drift. Use Value: IDSS ≤ 1 μA at 30 V ensures <0.5 μV error contribution in 10 kΩ bridge configurations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NMOS switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UVT-7 | RDS(on) = 3.5 Ω @ 4.5 V only; no guaranteed spec below 2.5 V; higher Ciss (12 pF) | Better for 3.3 V+ systems; unsuitable for 2.5 V logic-driven analog paths | Choose if operating exclusively at ≥3.3 V and higher speed not required |
| TPS22965DSGT | Integrated load switch IC with enable, slew control, and fault reporting; not discrete MOSFET | Provides system-level protection features but lacks analog signal transparency | Choose for power rail switching with diagnostics, not analog signal routing |
Compared with DMN2053UVT-7 and TPS22965DSGT, the SSM5N15FE(TE85L,F) uniquely balances guaranteed 2.5 V drive capability, ultra-low capacitance, and dual-channel isolation - making it optimal for space-constrained analog multiplexing where signal fidelity and voltage flexibility are primary constraints.
Availability
SSM5N15FE(TE85L,F) is available at Aetrix Electronics and suitable for high-speed switching, analog multiplexing, and GPIO-driven load enable applications requiring stable component supply and long-term industrial availability.
Supply support for SSM5N15FE(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on efficiency, reliability, and miniaturization for industrial and consumer systems.
The SSM5N15FE(TE85L,F) belongs to Toshiba's SSM-series dual-MOSFET portfolio, engineered specifically for low-voltage analog/digital signal routing in portable and battery-powered equipment where board space and drive voltage margin are critical.
FAQ
What is the maximum gate-source voltage rating for SSM5N15FE(TE85L,F)?
The absolute maximum gate-source voltage (VGSS) for SSM5N15FE(TE85L,F) is ±20 V. Exceeding this rating risks permanent gate oxide damage. Designers must ensure transient spikes or ESD events remain within this limit - use series resistors and TVS clamping if driving from unconditioned sources. This rating applies to both Q1 and Q2 channels independently.
Does SSM5N15FE(TE85L,F) support independent gate control of each MOSFET?
No, SSM5N15FE(TE85L,F) has a single shared gate terminal (Pin 5) that controls both Q1 and Q2 simultaneously. There is no internal separation or dedicated gate for either channel. For independent control, discrete single-channel MOSFETs or alternative dual-gate packages like SSM6N56NU must be used instead.
What is the thermal resistance θJA of SSM5N15FE(TE85L,F) on a standard FR4 board?
SSM5N15FE(TE85L,F) has a junction-to-ambient thermal resistance (θJA) of 833°C/W when mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with five 0.135 mm² copper pads. This value assumes natural convection and defines the maximum power dissipation before exceeding Tch = 150°C at 25°C ambient.
Can SSM5N15FE(TE85L,F) be used in bidirectional analog signal paths?
Yes, SSM5N15FE(TE85L,F) supports bidirectional analog signal routing because its N-channel structure allows conduction regardless of drain/source polarity when VGS > Vth. However, body diode conduction must be avoided - ensure source terminals are held at or below drain potential during off-state to prevent unintended current flow.
Is SSM5N15FE(TE85L,F) RoHS compliant and lead-free?
Yes, SSM5N15FE(TE85L,F) meets EU RoHS Directive requirements and is lead-free. Toshiba confirms compliance in its official environmental documentation, with homogeneous material analysis verifying absence of restricted substances including Pb, Cd, Hg, Cr(VI), PBB, and PBDE. Full compliance data is available upon request from Aetrix Electronics.
SSM5N15FE(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVI
- Package/Case:
- SOT-553
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id:
- 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7.8 pF @ 3 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ESV
SSM5N15FE(TE85L,F) FAQ
1.How can I place an order for SSM5N15FE(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM5N15FE(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM5N15FE(TE85L,F) reliable?
The price and inventory of SSM5N15FE(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM5N15FE(TE85L,F) is usually 5 days.
3.What payment methods are accepted for SSM5N15FE(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM5N15FE(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM5N15FE(TE85L,F)?
SSM5N15FE(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM5N15FE(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM5N15FE(TE85L,F)?
For technical support, including SSM5N15FE(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM5N15FE(TE85L,F) requirements.
6.How does Aetrix verify that SSM5N15FE(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All SSM5N15FE(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM5N15FE(TE85L,F) meets industry standards.
7.What is the process for return or replacement of SSM5N15FE(TE85L,F)?
All SSM5N15FE(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with SSM5N15FE(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM5N15FE(TE85L,F) part is unused and in its original packaging.
Return procedure for SSM5N15FE(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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