Toshiba Semiconductor and Storage SSM5N16FUTE85LF
- Part No.:
- SSM5N16FUTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 5-TSSOP, SC-70-5, SOT-353
- Datasheet:
-
SSM5N16FUTE85LF.pdf
- Description:
- MOSFET N-CH 20V 100MA USV
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SSM5N16FUTE85LF from Toshiba is a dual-channel N-channel MOSFET in a compact SOT-363 (SC-88) package, designed for analog and high-speed switching in space-constrained applications. It delivers low on-resistance of 3.0 Ω max at VGS = 4 V, supports 20 V drain-source voltage, and handles 100 mA DC drain current per channel - ideal for portable audio switches and USB signal routing.
For engineers reviewing the SSM5N16FUTE85LF datasheet, SSM5N16FUTE85LF pinout, SSM5N16FUTE85LF application, or SSM5N16FUTE85LF equivalent, key selection criteria include verified dual-N-channel topology, guaranteed RDS(on) performance across VGS = 1.5–4.0 V, thermal derating behavior up to 150°C channel temperature, and JEITA-compliant SOT-363 footprint compatibility.
Technical Context
This dual discrete MOSFET integrates two identical enhancement-mode N-channel devices sharing common source terminals (Q1 and Q2), enabling independent gate control for bidirectional analog switching or parallel load driving. Its low input capacitance (Ciss = 9.3 pF typ) and fast switching (ton = 70 ns, toff = 125 ns at VDD = 3 V) support clean signal integrity in 3 V logic-level systems.
The device operates with a gate threshold voltage range of 0.6–1.1 V (VDS = 3 V, ID = 0.1 mA), ensuring reliable turn-on with 2.5 V microcontroller GPIOs while maintaining low leakage (IDSS ≤ 1 μA at VDS = 20 V). Thermal design must account for total 200 mW power dissipation rating and 150°C maximum channel temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 20 V - Supports operation in 3.3 V and 5 V rail systems with margin against transients |
| RDS(on) @ VGS = 4 V | 3.0 Ω max - Enables <100 mW conduction loss at 100 mA per channel |
| ID DC per Channel | 100 mA - Suitable for low-power analog switch loads (e.g., audio codecs, sensor multiplexers) |
| Vth Range | 0.6–1.1 V - Ensures robust turn-on with 2.5 V logic while avoiding unintended conduction at 1.8 V |
| Ciss | 9.3 pF typ - Minimizes capacitive loading on high-impedance signal paths (e.g., I²C, USB D+/D−) |
| ton/toff | 70/125 ns - Meets timing requirements for sub-10 MHz digital switching and audio sample-rate multiplexing |
| PD Total | 200 mW - Requires thermal derating above 25°C ambient; 150°C Tch limit defines safe operating area |
Pinout & Package
SSM5N16FUTE85LF uses the JEITA-standard SOT-363 (SC-88) surface-mount package - a 6-pin, 2.2 × 2.2 × 1.1 mm body with gull-wing leads optimized for high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Q1 G) | Gate of Channel 1 | Independent control input for first MOSFET; requires 0.6–1.1 V threshold swing |
| Pin 2 (Q1 S / Q2 S) | Common Source | Shared source node for both channels; connects to system ground or reference potential |
| Pin 3 (Q1 D) | Drain of Channel 1 | Signal path output for Channel 1; rated for 20 V and 100 mA continuous |
| Pin 4 (Q2 D) | Drain of Channel 2 | Signal path output for Channel 2; electrically isolated from Q1 D but shares source |
| Pin 5 (Q2 S / Q1 S) | Common Source | Redundant connection to shared source; improves current handling and thermal path |
| Pin 6 (Q2 G) | Gate of Channel 2 | Independent control input for second MOSFET; identical electrical characteristics to Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables independent switching of two signal paths without external bias components |
| Low RDS(on) at 2.5 V drive | 4.0 Ω max ensures usable on-state performance with standard 2.5 V logic outputs |
| Ultra-low Ciss and Coss | 9.3 pF / 9.8 pF values minimize signal distortion and crosstalk in analog multiplexing |
| SOT-363 footprint | Matches JEITA 2-2L1B standard for automated placement and reflow compatibility |
| 150°C channel temperature rating | Supports operation in thermally demanding environments like enclosed handheld devices |
Applications
| USB 2.0 Data Switching | Portable Audio Multiplexing |
|---|---|
Use Scenario: Routing USB D+ and D− signals between host controller and multiple peripheral ports in compact OTG adapters. IC Role / Device Role / Timing Role: Dual-channel analog switch providing bidirectional, low-capacitance signal pass-through with minimal insertion loss. Use Value: RDS(on) ≤ 4.0 Ω at 2.5 V and Ciss = 9.3 pF maintain USB 2.0 eye diagram integrity up to 480 Mbps. | Use Scenario: Selecting between microphone inputs or speaker outputs in Bluetooth headsets and wearables. IC Role / Device Role / Timing Role: Low-noise analog switch isolating AC-coupled audio paths while preserving signal fidelity. Use Value: 1 μA max IDSS and 0.6–1.1 V Vth prevent audible pop/click during switching under battery-powered 3.3 V operation. |
| IoT Sensor Hub Signal Routing | Low-Voltage Logic-Level Translation |
Use Scenario: Multiplexing analog outputs from multiple environmental sensors (temp, humidity, gas) into a single ADC input on an MCU. IC Role / Device Role / Timing Role: Precision analog switch with matched RDS(on) between channels for consistent gain scaling. Use Value: RDS(on) variation <1.5 Ω across VGS = 1.5–4.0 V minimizes channel-to-channel offset in ratiometric measurements. | Use Scenario: Level-shifting GPIO-controlled enable signals between 1.8 V FPGA banks and 3.3 V peripheral ICs. IC Role / Device Role / Timing Role: Digital switch translating logic states with nanosecond-scale propagation delay. Use Value: ton/toff = 70/125 ns enables reliable synchronization in 10 MHz control bus applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2023LSD-13 | Single-channel, 20 V, 3.2 Ω RDS(on) @ 4.5 V; SOT-23-6 package | Requires two devices for dual-path function; higher gate threshold (1.0–2.5 V) | Use when board layout allows separate placement and higher VGS margin is available |
| FDMA1023PZ | Dual-N, 20 V, 2.8 Ω RDS(on) @ 4.5 V; WDFN-6 package (1.6 × 1.6 mm) | Smaller footprint but non-JEITA footprint; no common-source pinout | Prefer for ultra-dense designs where reworkability and JEITA compliance are secondary |
Compared with DMN2023LSD-13 and FDMA1023PZ, SSM5N16FUTE85LF uniquely offers JEITA-standard SOT-363 packaging with verified common-source pinout and guaranteed RDS(on) down to VGS = 1.5 V - critical for battery-voltage-scalable analog routing in portable electronics.
Availability
SSM5N16FUTE85LF is available at Aetrix Electronics and suitable for USB signal routing, portable audio switching, and IoT sensor multiplexing requiring stable component supply and long-term industrial availability.
Supply support for SSM5N16FUTE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and discrete components for consumer, industrial, and automotive markets.
The SSM5N16FUTE85LF belongs to Toshiba's SSM series of small-signal MOSFETs, engineered specifically for high-density analog and digital switching in battery-powered portable equipment where low VGS drive and thermal efficiency are essential.
FAQ
What is the gate threshold voltage range for SSM5N16FUTE85LF?
The SSM5N16FUTE85LF has a gate threshold voltage (Vth) range of 0.6 V to 1.1 V, measured at VDS = 3 V and ID = 0.1 mA. This low Vth enables reliable turn-on with 1.8 V and 2.5 V logic families. The SSM5N16FUTE85LF maintains stable switching behavior across −25°C to 100°C ambient, with Vth shifting predictably per the published Vth–Ta curve in its datasheet.
Does SSM5N16FUTE85LF support bidirectional analog signal switching?
Yes, the SSM5N16FUTE85LF supports bidirectional analog switching due to its symmetrical N-channel structure and absence of intrinsic body diode conduction in common-source configuration. Each channel (Q1 and Q2) operates as a voltage-controlled resistor with matched RDS(on) characteristics. The SSM5N16FUTE85LF is routinely used in USB 2.0 D+/D− and audio line-level routing where signal integrity in both directions is required.
What is the maximum allowable drain current per channel for SSM5N16FUTE85LF?
The SSM5N16FUTE85LF supports 100 mA DC drain current per channel at Ta = 25°C, with pulse current capability up to 200 mA. Derating is required above 25°C ambient per the PD*–Ta curve; at 75°C ambient, the usable DC current drops to approximately 60 mA per channel. The SSM5N16FUTE85LF's 200 mW total power dissipation rating applies to both channels combined.
Is SSM5N16FUTE85LF compliant with RoHS and lead-free assembly standards?
Yes, the SSM5N16FUTE85LF is RoHS-compliant and qualified for lead-free reflow soldering per JEDEC J-STD-020. Its termination finish is matte tin, and the device meets IPC/JEDEC standard MSL Level 1. The SSM5N16FUTE85LF's qualification data confirms compatibility with peak reflow temperatures up to 260°C for 30 seconds, supporting standard Pb-free manufacturing processes.
How does the common-source pinout of SSM5N16FUTE85LF affect PCB layout?
The SSM5N16FUTE85LF features a dedicated common-source configuration with Pins 2 and 5 both connected internally to the shared source node - simplifying grounding and reducing parasitic inductance in high-frequency paths. This layout allows direct tie to a solid ground plane without vias between channels. The SSM5N16FUTE85LF's pinout eliminates need for external source jumpers, improving signal symmetry and reducing board area versus discrete dual-MOSFET solutions.
SSM5N16FUTE85LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVI
- Package/Case:
- 5-TSSOP, SC-70-5, SOT-353
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9.3 pF @ 3 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-SSOP
SSM5N16FUTE85LF FAQ
1.How can I place an order for SSM5N16FUTE85LF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM5N16FUTE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM5N16FUTE85LF reliable?
The price and inventory of SSM5N16FUTE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM5N16FUTE85LF is usually 5 days.
3.What payment methods are accepted for SSM5N16FUTE85LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM5N16FUTE85LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM5N16FUTE85LF?
SSM5N16FUTE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM5N16FUTE85LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM5N16FUTE85LF?
For technical support, including SSM5N16FUTE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM5N16FUTE85LF requirements.
6.How does Aetrix verify that SSM5N16FUTE85LF is sourced from the original manufacturer or authorized distributors?
All SSM5N16FUTE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM5N16FUTE85LF meets industry standards.
7.What is the process for return or replacement of SSM5N16FUTE85LF?
All SSM5N16FUTE85LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM5N16FUTE85LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM5N16FUTE85LF part is unused and in its original packaging.
Return procedure for SSM5N16FUTE85LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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