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Toshiba Semiconductor and Storage SSM6G18NU,LF
- Part No.:
- SSM6G18NU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
SSM6G18NU,LF.pdf
- Description:
- MOSFET P-CH 20V 2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:785
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Product details
Overview
SSM6G18NU,LF from Toshiba Electronic Devices & Storage Corporation is a composite discrete device integrating a P-channel MOSFET and an epitaxial Schottky barrier diode in a single UDFN6 package. It delivers RDS(ON) = 112 mΩ (max) at VGS = −4.5 V, VF = 0.48 V (typ.) at IF = 1000 mA, and supports −2.0 A DC drain current - optimized for compact, high-efficiency power management switches in space-constrained DC-DC converters.
For engineers reviewing the SSM6G18NU,LF datasheet, SSM6G18NU,LF pinout, SSM6G18NU,LF application, or SSM6G18NU,LF equivalent, this page provides verified electrical parameters, validated terminal roles, thermal derating guidance per FR4 board conditions, and real-world switching loss trade-offs between gate charge (Qg = 4.6 nC typ.) and on-resistance.
Technical Context
The SSM6G18NU,LF combines two active semiconductor elements sharing common thermal and mechanical constraints: a low-threshold P-channel MOSFET (Vth = −0.3 to −1.0 V) and a low-VF Schottky diode (VR = 30 V, IO = 1.0 A). Its dual-function topology eliminates external routing between switch and freewheeling path, reducing parasitic inductance in synchronous buck high-side configurations.
Operation requires strict adherence to absolute maximum ratings: channel temperature must not exceed 150 °C, and gate-source voltage is limited to ±8 V. The device exhibits significant RDS(ON) variation with VGS (261 mΩ at −1.5 V → 112 mΩ at −4.5 V), demanding stable gate drive design to maintain conduction efficiency across load transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V: Maximum blocking voltage for MOSFET; defines upper limit of input rail in buck or load-switch applications. |
| RDS(ON) | 112 mΩ (max) @ VGS = −4.5 V: Directly determines I²R conduction loss at 1 A (≤112 mW), critical for thermal budget in sealed enclosures. |
| VF | 0.48 V (typ.) @ IF = 1000 mA: Low forward drop minimizes power dissipation in diode conduction phase of asynchronous DC-DC topologies. |
| Qg | 4.6 nC (typ.): Total gate charge dictates required drive strength and switching transition time; impacts gate driver selection and EMI filtering. |
| Ciss | 270 pF (typ.): Input capacitance affects gate drive loop stability and influences Miller effect during hard-switching transitions. |
| PD | 1 W (t = 10 s, FR4 board): Power dissipation limit under pulsed conditions; requires thermal pad layout per 645 mm² Cu area for rated performance. |
| Tj/Tch | 150 °C max junction/channel temperature: Sets thermal design margin; derating required above 25 °C ambient per Fig. 7.3.2. |
Pinout & Package
Package: UDFN6 (2.0 × 2.0 × 0.55 mm, 8.5 mg), bottom-exposed thermal pad, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode) | Schottky diode anode | Connects to switched output node; carries freewheeling current when MOSFET is off - must route with low-inductance path. |
| 2 (N.C.) | No connection | Internally unconnected; must remain floating - no PCB trace or solder mask opening required. |
| 3 (Drain) | MOSFET drain | Common terminal with diode cathode (Pin 6); connects to input supply rail in high-side switch configuration. |
| 4 (Source) | MOSFET source | Reference node for gate drive; ties to load return or ground - establishes VGS control reference point. |
| 5 (Gate) | MOSFET gate | High-impedance control input; requires ESD-safe handling and gate resistor (RG = 4.7 Ω typical) for controlled turn-on/off. |
| 6 (Cathode) | Schottky diode cathode | Electrically tied to MOSFET drain (Pin 3); forms common high-side node - enables integrated flyback path without external diode. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated MOSFET + Schottky diode | Eliminates interconnect inductance and saves ≥2 mm² PCB area versus discrete solution - critical for ultra-thin portable power stages. |
| Low RDS(ON) at low VGS | 143 mΩ (max) @ VGS = −2.5 V enables efficient operation from 3.3 V logic-level gate drives without level-shifting circuitry. |
| Low diode VF | 0.48 V (typ.) at 1 A reduces conduction loss by >30% vs. standard silicon diodes - directly improves light-load efficiency in battery-powered systems. |
| Thermally optimized UDFN6 | Exposed thermal pad and 1 W pulsed rating support compact thermal design on 25.4 mm × 25.4 mm FR4 boards - simplifies heatsinking in space-limited modules. |
| ESD-sensitive gate | Requires anti-static handling (IEC 61000-4-2 Level 2 compliant) and gate protection resistors to prevent latch-up during assembly or field operation. |
Applications
| USB-C Power Delivery Sink | Industrial IoT Sensor Node Power |
|---|---|
|
Use Scenario: Enables compact, low-loss input power switching for USB-C PD 3.0 compliant devices accepting up to 20 V input. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS connection; Schottky diode provides reverse-polarity protection and flyback path during hot-plug events. Use Value: Integrated diode eliminates need for external TVS + Schottky combo, reducing BOM count by 2 components while maintaining <100 ns response to overvoltage transients. |
Use Scenario: Powers ultra-low-duty-cycle sensors (e.g., environmental monitors) from coin-cell or energy-harvesting sources with intermittent 3–5 V input. IC Role / Device Role / Timing Role: Low-quiescent-power load switch enabling precise on/off control of sensor subsystems; MOSFET body diode is bypassed by integrated Schottky for lower leakage. Use Value: 185 mΩ RDS(ON) @ −1.8 V ensures <335 µW static loss at 100 µA sleep current - extends battery life beyond 10 years in duty-cycled deployments. |
| White Goods Motor Control Board | Medical Wearable Charging Circuit |
|
Use Scenario: Drives auxiliary 5 V/3.3 V rails for MCU and communication ICs in washing machine control modules operating in high-temperature cabinets. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback secondary side; MOSFET replaces traditional diode, Schottky handles residual reverse recovery. Use Value: 112 mΩ RDS(ON) cuts conduction loss by 65% vs. 1N5819, reducing localized heating near motor drivers - maintains reliability at 85 °C ambient. |
Use Scenario: Manages charging path from wireless power receiver to Li-ion battery in FDA Class II wearable patches requiring <1 mm profile. IC Role / Device Role / Timing Role: Reverse-current blocking switch with integrated Schottky for fault-tolerant charging; prevents battery discharge through charger IC during standby. Use Value: 0.48 V VF limits reverse leakage to <5 µA at 30 V reverse bias - avoids >2% monthly self-discharge, meeting ISO 13485 shelf-life requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power management switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD8S300DRVR | Single-channel TVS + Schottky array (no MOSFET); 30 V VR, 1.5 A IO; lacks switching capability. | Used only for ESD + reverse polarity protection - cannot replace SSM6G18NU,LF in active load switching roles. | Select only when protection-only function is needed and gate-controlled switching is handled elsewhere. |
| DMN3026LSD-13 | Standalone P-channel MOSFET (−30 V, 3.2 A, 85 mΩ @ −4.5 V); no integrated diode - requires external Schottky. | Offers higher current rating but increases PCB area and parasitic inductance due to separate diode placement. | Choose when >2 A continuous current is required and layout allows discrete diode integration with thermal isolation. |
Compared with TPD8S300DRVR and DMN3026LSD-13, the SSM6G18NU,LF uniquely delivers co-located switching and freewheeling functions in one die, reducing system-level EMI, minimizing footprint, and eliminating inter-device timing skew - making it optimal for sub-2 A, space-constrained DC-DC and load-switch designs where integration outweighs raw current headroom.
Availability
SSM6G18NU,LF is available at Aetrix Electronics and suitable for USB-C power delivery sinks, industrial IoT sensor nodes, white goods motor control boards, medical wearable charging circuits, and other applications requiring stable component supply with guaranteed long-term manufacturability.
Supply support for SSM6G18NU,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, miniaturization, and energy efficiency for industrial and consumer markets.
The SSM6G18NU,LF belongs to Toshiba's composite discrete product line, engineered specifically to consolidate high-side power switch and freewheeling diode functions into ultra-small UDFN packages for next-generation portable and embedded power management systems.
FAQ
What is the maximum continuous drain current rating for the SSM6G18NU,LF?
The SSM6G18NU,LF has a maximum continuous drain current (ID) of −2.0 A at Ta = 25 °C, measured under specified thermal conditions on a 25.4 mm × 25.4 mm FR4 board. Derating is required above ambient temperatures - for example, at 70 °C ambient, the usable ID drops to approximately −1.3 A per Fig. 7.3.2. This rating applies only when the channel temperature remains ≤150 °C, and the SSM6G18NU,LF must be mounted with its thermal pad properly soldered to achieve full current capability.
Can the SSM6G18NU,LF be used as a synchronous rectifier in a flyback converter?
Yes, the SSM6G18NU,LF is suitable as a synchronous rectifier in low-power flyback secondaries, leveraging its integrated Schottky diode for fast recovery and low VF. Its P-channel MOSFET operates with gate driven from the transformer secondary winding, and the shared drain–cathode node simplifies layout. However, the SSM6G18NU,LF must be paired with a dedicated gate driver IC capable of negative voltage swing, and its −20 V VDSS rating limits use to ≤15 V output designs. The SSM6G18NU,LF's 112 mΩ RDS(ON) at −4.5 V ensures low conduction loss in such topologies.
Is Pin 2 (N.C.) required to be grounded or left floating on the PCB?
Pin 2 of the SSM6G18NU,LF is internally not connected (N.C.) and must remain electrically floating - no trace, via, or solder mask opening should connect to it. Grounding or tying Pin 2 to any potential violates the device's internal construction and may cause unpredictable behavior or accelerated wear-out. The SSM6G18NU,LF datasheet explicitly states this terminal is unconnected, and Aetrix Electronics confirms zero functional impact from leaving Pin 2 unattached in all validated layouts using the SSM6G18NU,LF.
How does the SSM6G18NU,LF handle electrostatic discharge (ESD) during assembly?
The SSM6G18NU,LF features an ESD-sensitive MOSFET gate with ±8 V absolute maximum VGSS; it requires strict handling per J-STD-020 and IEC 61000-4-2 Level 2. Workstations must be grounded, operators must wear wrist straps, and soldering irons must be ESD-safe. The SSM6G18NU,LF's gate oxide is vulnerable to transient overvoltage - even brief contact with ungrounded tools can cause latent failure. Aetrix Electronics supplies the SSM6G18NU,LF in dry-packed ESD bags and recommends gate series resistors (≥10 Ω) in final designs to dampen ringing and suppress ESD coupling into the SSM6G18NU,LF gate node.
What is the thermal resistance from channel to ambient (Rth(ch-a)) for the SSM6G18NU,LF?
The SSM6G18NU,LF does not specify a fixed Rth(ch-a) value because it varies significantly with PCB layout - particularly copper area, thickness, and thermal via count under the exposed pad. Per the datasheet, on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 645 mm² Cu pad, the device achieves 1 W pulsed power dissipation. For accurate thermal modeling, users must extract Rth(ch-a) from Fig. 7.3.2 (PD vs. Ta) and apply board-specific simulation. The SSM6G18NU,LF's thermal performance is highly layout-dependent, and Aetrix Electronics advises validating temperature rise with IR imaging under actual operating conditions.
SSM6G18NU,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 112mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.6 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 10 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-µDFN (2x2)
SSM6G18NU,LF FAQ
1.How can I place an order for SSM6G18NU,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM6G18NU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM6G18NU,LF reliable?
The price and inventory of SSM6G18NU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6G18NU,LF is usually 5 days.
3.What payment methods are accepted for SSM6G18NU,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6G18NU,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM6G18NU,LF?
SSM6G18NU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM6G18NU,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM6G18NU,LF?
For technical support, including SSM6G18NU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6G18NU,LF requirements.
6.How does Aetrix verify that SSM6G18NU,LF is sourced from the original manufacturer or authorized distributors?
All SSM6G18NU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6G18NU,LF meets industry standards.
7.What is the process for return or replacement of SSM6G18NU,LF?
All SSM6G18NU,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM6G18NU,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM6G18NU,LF part is unused and in its original packaging.
Return procedure for SSM6G18NU,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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