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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage SSM6J212FE,LF

Name: SSM6J212FE,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM6J212FE,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM6J212FE,LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SSM6J212FE,LF.pdf

Description:: MOSFET P-CH 20V 4A ES6

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Product details

Overview

SSM6J212FE from TOSHIBA is a P-channel enhancement-mode MOSFET designed for low-voltage power management switching in compact DC-DC converters and load switches. It supports 1.5-V gate drive, delivers R_DS(ON) = 40.7 mΩ (max) at V_GS = −4.5 V, handles −4.0 A continuous drain current, and operates with −20 V drain-source breakdown voltage in surface-mount ES6 package.

For engineers reviewing the SSM6J212FE datasheet, SSM6J212FE pinout, SSM6J212FE application, or SSM6J212FE equivalent, key selection criteria include low-threshold gate drive compatibility with 1.8-V logic, temperature-stable R_DS(ON) performance up to 100°C ambient, and validated thermal behavior on standard FR4 PCBs with 645 mm² copper pad.

Technical Context

This device uses Toshiba's U-MOSⅥ trench-gate process to achieve high channel density and low specific on-resistance. Its gate threshold voltage range of −0.3 V to −1.0 V enables reliable turn-on with 1.5–1.8 V control signals while maintaining robust off-state leakage (<1 μA).

The MOSFET features optimized capacitance ratios (C_iss/C_oss = ~7.6) and low Q_gd/Q_g ratio (2.4 nC / 14.1 nC), supporting fast, low-loss switching in synchronous buck topologies and active load switching circuits operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−20 V - Maximum blocking voltage for 3.3-V and lower rail applications
R_DS(ON) @ V_GS = −4.5 V	40.7 mΩ (max) - Enables <100 mW conduction loss at 2 A continuous load
I_D (DC)	−4.0 A - Rated continuous current with 500 mW dissipation on FR4 board
V_th	−0.3 to −1.0 V - Ensures full enhancement with 1.5-V logic-level gate drive
C_iss	970 pF - Supports stable gate drive design with standard 4.7 Ω series resistor
t_on/t_off	47 ns / 143 ns - Enables efficient operation in sub-1-MHz DC-DC switching
Q_g	14.1 nC - Low total gate charge reduces driver power and EMI during transitions

Pinout & Package

SSM6J212FE is housed in a 6-pin ES6 (SOT-457) surface-mount package with exposed drain pad for thermal enhancement. Pin 1–2–5–6 are internally connected to drain; Pin 3 is gate; Pin 4 is source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain	Common high-side switch node; electrically tied to exposed thermal pad
3	Gate	Control input requiring negative bias relative to source for turn-on
4	Source	Reference node for gate drive and current return path; connects to system ground or low-side rail

Key Features

Feature	Design Value
1.5-V logic-compatible gate drive	Operates fully enhanced with V_GS ≥ −1.5 V, enabling direct interface with low-voltage microcontrollers
Low R_DS(ON) at low V_GS	94.0 mΩ max at −1.5 V allows efficient 1.8-V/2.5-V domain load switching without level-shifting
Thermally optimized ES6 package	Exposed drain pad and 645 mm² Cu pad support 700 mW pulse dissipation and 150°C channel temperature limit
Fast switching with low Q_gd	2.4 nC gate-drain charge minimizes Miller-induced switching delay and shoot-through risk
Robust gate oxide	±8 V V_GSS rating ensures reliability under transient gate overvoltage and ESD events

Applications

USB Power Delivery Switching	Low-Voltage Load Switch
Use Scenario: Hot-swap control of USB-C VBUS in portable devices with 1.8-V system controllers. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch enabling controlled inrush current and reverse-current blocking. Use Value: 1.5-V gate compatibility eliminates need for external level shifters; 40.7 mΩ R_DS(ON) limits voltage drop to <82 mV at 2 A.	Use Scenario: Standby power gating for SoC subsystems powered from 3.3-V or 2.5-V rails. IC Role / Device Role / Timing Role: Load switch providing ON/OFF control with minimal quiescent current and fast response. Use Value: −1.0 V V_th upper limit ensures clean turn-off with 0 V gate drive; <1 μA I_DSS prevents standby leakage.
DC-DC Synchronous Buck High-Side	Industrial Sensor Bias Control
Use Scenario: High-side switch in 3.3-V input buck converter supplying 1.2-V core voltage to FPGA or MCU. IC Role / Device Role / Timing Role: Synchronously commutated power switch with gate timing matched to low-side FET. Use Value: 47 ns t_on and 143 ns t_off support 500 kHz–1 MHz switching; low C_oss (127 pF) reduces dead-time losses.	Use Scenario: Precision bias enable for analog sensor front-ends requiring clean power sequencing. IC Role / Device Role / Timing Role: Controlled power rail activation with minimal voltage droop and no reverse conduction. Use Value: R_DS(ON) variation <±15% from −25°C to 100°C ensures stable bias across industrial temperature range.

USB Power Delivery Switching

Low-Voltage Load Switch

Use Scenario: Hot-swap control of USB-C VBUS in portable devices with 1.8-V system controllers.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch enabling controlled inrush current and reverse-current blocking.

Use Value: 1.5-V gate compatibility eliminates need for external level shifters; 40.7 mΩ R_DS(ON) limits voltage drop to <82 mV at 2 A.

Use Scenario: Standby power gating for SoC subsystems powered from 3.3-V or 2.5-V rails.

IC Role / Device Role / Timing Role: Load switch providing ON/OFF control with minimal quiescent current and fast response.

Use Value: −1.0 V V_th upper limit ensures clean turn-off with 0 V gate drive; <1 μA I_DSS prevents standby leakage.

DC-DC Synchronous Buck High-Side

Industrial Sensor Bias Control

Use Scenario: High-side switch in 3.3-V input buck converter supplying 1.2-V core voltage to FPGA or MCU.

IC Role / Device Role / Timing Role: Synchronously commutated power switch with gate timing matched to low-side FET.

Use Value: 47 ns t_on and 143 ns t_off support 500 kHz–1 MHz switching; low C_oss (127 pF) reduces dead-time losses.

Use Scenario: Precision bias enable for analog sensor front-ends requiring clean power sequencing.

IC Role / Device Role / Timing Role: Controlled power rail activation with minimal voltage droop and no reverse conduction.

Use Value: R_DS(ON) variation <±15% from −25°C to 100°C ensures stable bias across industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AO3401	R_DS(ON) = 44 mΩ @ −4.5 V; V_th = −0.7 to −1.3 V; SO-23 package	Higher V_th lower limit requires stronger negative gate drive for reliable 1.5-V operation	Preferred where higher V_GS margin is available and SO-23 footprint is required
SI2301	R_DS(ON) = 115 mΩ @ −2.5 V; V_th = −0.45 to −1.0 V; SOT-23 package	Higher on-resistance at low V_GS increases conduction loss in 1.5–1.8 V drive scenarios	Suitable for cost-sensitive designs with relaxed efficiency targets and space-constrained layouts

Compared with AO3401 and SI2301, the SSM6J212FE provides superior R_DS(ON) at 1.5–1.8 V gate drive and tighter V_th distribution, making it optimal for ultra-low-voltage load switching where gate drive headroom is limited and thermal performance is critical.

Availability

SSM6J212FE is available at Aetrix Electronics and suitable for USB power delivery modules, battery-powered IoT load switches, and industrial DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for SSM6J212FE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation develops discrete semiconductors and power devices with emphasis on energy efficiency, miniaturization, and automotive-grade reliability.

The SSM6J212FE belongs to Toshiba's U-MOSⅥ P-channel MOSFET family, engineered specifically for low-voltage, high-efficiency power management in portable and space-constrained electronics.

FAQ

What is the maximum continuous drain current rating for SSM6J212FE?

The SSM6J212FE has a DC drain current rating of −4.0 A when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm with 645 mm² copper pad) at T_a = 25°C. This rating assumes channel temperature remains ≤150°C; derating is required above 25°C ambient per the PD–T_a curve in the datasheet.

Can SSM6J212FE be driven directly by a 1.8-V GPIO without level shifting?

Yes, the SSM6J212FE is explicitly characterized for 1.5-V drive and achieves R_DS(ON) = 65.4 mΩ (max) at V_GS = −1.8 V. Its V_th range of −0.3 V to −1.0 V ensures full enhancement with 1.8-V logic, eliminating need for external level shifters in most low-power load switch applications.

What is the thermal resistance from channel to ambient for SSM6J212FE?

The SSM6J212FE has a typical R_th(ch-a) of 250°C/W when mounted on the specified FR4 board (25.4 mm × 25.4 mm × 1.6 mm, 645 mm² Cu pad). This value is derived from its 500 mW power dissipation rating at 25°C ambient and 150°C maximum channel temperature.

Does SSM6J212FE support bidirectional current flow?

No, the SSM6J212FE is a unidirectional P-channel MOSFET with body diode oriented from source to drain. It conducts only from drain to source when turned on and blocks reverse current unless externally biased. Its internal structure does not support synchronous rectification in reverse direction.

What is the gate charge profile of SSM6J212FE and how does it affect driver selection?

The SSM6J212FE has Q_g = 14.1 nC, Q_gs1 = 1.7 nC, and Q_gd = 2.4 nC at V_DD = −10 V. These values indicate moderate gate drive strength requirements: a 4.7 Ω series resistor yields measured t_on/t_off of 47 ns/143 ns, making it compatible with standard logic drivers and microcontroller GPIOs capable of ±10 mA sink/source.

SSM6J212FE,LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVI

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 40.7mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 14.1 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 970 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: ES6

SSM6J212FE,LF FAQ

1.How can I place an order for SSM6J212FE,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM6J212FE,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM6J212FE,LF reliable?

The price and inventory of SSM6J212FE,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6J212FE,LF is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6J212FE,LF transactions.

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4.How is shipping managed for SSM6J212FE,LF?

SSM6J212FE,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM6J212FE,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM6J212FE,LF?

For technical support, including SSM6J212FE,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6J212FE,LF requirements.

6.How does Aetrix verify that SSM6J212FE,LF is sourced from the original manufacturer or authorized distributors?

All SSM6J212FE,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6J212FE,LF meets industry standards.

7.What is the process for return or replacement of SSM6J212FE,LF?

All SSM6J212FE,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM6J212FE,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM6J212FE,LF part is unused and in its original packaging.

Return procedure for SSM6J212FE,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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