Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F

Overview

SSM6J213FE from TOSHIBA is a P-channel silicon MOSFET in U-MOSⅥ technology, designed as a low-voltage power management switch. It supports 1.5-V gate drive, delivers R_DS(ON) = 250 mΩ max at V_GS = −1.5 V, and operates with V_DSS = −20 V and I_D = −2.6 A (DC), enabling compact load switching in space-constrained portable electronics.

For engineers reviewing the SSM6J213FE datasheet, SSM6J213FE pinout, SSM6J213FE application, or SSM6J213FE equivalent, key selection criteria include low-threshold gate drive compatibility, thermal performance on FR4 boards, R_DS(ON) vs. V_GS behavior at sub-2-V bias, and dual-drain configuration for parallel current handling.

Technical Context

This device uses Toshiba's U-MOSⅥ trench-gate structure to achieve enhanced channel density and reduced specific on-resistance. Its gate threshold voltage (V_th = −0.3 to −1.0 V) enables reliable turn-on with 1.5–1.8 V logic-level control, while its dual-drain layout (pins 1,2,5,6) supports higher current sharing and thermal distribution.

The SSM6J213FE exhibits strong dynamic performance: t_on = 12.0 ns, t_off = 46.2 ns, Q_g = 4.7 nC, and C_iss = 290 pF - optimized for high-frequency switching in DC-DC converters and battery protection circuits where fast response and low gate charge reduce drive losses.

Key Specifications

Pinout & Package

SSM6J213FE is housed in a 6-pin ES6 surface-mount package (JEITA: 2-2N1J), measuring 2.0 × 2.0 × 0.55 mm, with exposed drain pads for thermal conduction. The package supports reflow soldering and is rated for 150°C channel temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with AO3415 and DMG1012T, the SSM6J213FE uniquely balances 1.5-V drive capability, 2.6-A current rating, and dual-drain thermal design - making it the only option among the three qualified for compact, low-voltage, medium-current load switching without gate boosting or derating.

Availability

SSM6J213FE is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, IoT sensor node load control, and PMIC power-path management requiring stable component supply and long-term industrial availability.

Supply support for SSM6J213FE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components, with core expertise in power MOSFETs, analog ICs, and discrete devices for industrial, automotive, and consumer applications.

The SSM6J213FE belongs to Toshiba's U-MOSⅥ P-channel MOSFET product line, engineered specifically for low-voltage, high-efficiency power switching in portable and battery-powered systems where gate drive voltage headroom is constrained.

FAQ

What is the minimum gate-source voltage required to fully turn on the SSM6J213FE?

The SSM6J213FE has a gate threshold voltage (V_th) range of −0.3 V to −1.0 V, but full enhancement requires V_GS ≤ −1.5 V. At −1.5 V, R_DS(ON) is guaranteed ≤250 mΩ. For optimal conduction, −2.5 V or −4.5 V is recommended - the SSM6J213FE achieves 133 mΩ and 103 mΩ respectively. This makes the SSM6J213FE suitable for direct interface with 1.8-V and 2.5-V logic outputs.

Can the SSM6J213FE be used in high-side switch configurations?

Yes, the SSM6J213FE is a P-channel MOSFET and is inherently suited for high-side switching. Its source terminal (pin 4) connects to the positive rail, while the load connects between drain (pins 1,2,5,6) and ground. Gate drive must be referenced to source potential - for example, using a charge pump or level shifter if controlling from a ground-referenced MCU. The SSM6J213FE's low V_th simplifies biasing in such topologies.

What is the thermal performance of the SSM6J213FE on a standard PCB?

When mounted on a 25.4 × 25.4 mm FR4 board with 645 mm² copper pad, the SSM6J213FE has a junction-to-ambient thermal resistance (R_th(j-a)) of 250°C/W. At 2.6 A DC and R_DS(ON) = 103 mΩ, power dissipation is ~700 mW, resulting in ~175°C junction rise above ambient - confirming derating is essential. The SSM6J213FE's dual-drain layout helps distribute heat, but thermal vias under drain pads are strongly advised for sustained operation.

Does the SSM6J213FE support parallel operation for higher current handling?

Yes - the SSM6J213FE features four paralleled drain terminals (pins 1, 2, 5, 6) and matched internal die characteristics, enabling inherent current sharing when multiple units are placed in parallel. This architecture reduces effective package resistance and improves thermal uniformity. When paralleling SSM6J213FE devices, ensure symmetrical PCB layout and gate drive routing to maintain balance; no external ballast resistors are needed due to the device's positive temperature coefficient of R_DS(ON).

Is the SSM6J213FE RoHS compliant and lead-free?

Yes, the SSM6J213FE is RoHS compliant and lead-free, conforming to EU Directive 2011/65/EU and subsequent amendments. Toshiba specifies halogen-free packaging and Pb-free terminations for this part. Full compliance documentation, including material declarations and test reports, is available through authorized distributors and Toshiba's official product portal for the SSM6J213FE.