Toshiba Semiconductor and Storage SSM6J422TU,LXHF

Overview

SSM6J422TU,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual P-channel U-MOSFET in UF6 package, rated for -20 V drain-source voltage, -4 A DC drain current, and 1 W power dissipation. It delivers R_DS(ON) = 42.7 mΩ (max) at V_GS = -4.5 V and supports 1.5-V logic-level gate drive-enabling direct interface with low-voltage microcontrollers in automotive power management switches.

For engineers reviewing the SSM6J422TU,LXHF datasheet, SSM6J422TU,LXHF pinout, SSM6J422TU,LXHF application, or SSM6J422TU,LXHF equivalent, key selection criteria include AEC-Q101 qualification, ultra-low R_DS(ON) at 1.5–2.5 V gate drive, dual-channel integration in 2.0 × 2.0 mm UF6, and verified performance in battery protection and load switching circuits.

Technical Context

This dual P-channel MOSFET integrates two matched silicon U-MOS devices in a single UF6 package, sharing common source terminals (Pin 4) and independent drains (Pins 1,2,5,6) and gate (Pin 3). Its design targets high-efficiency, space-constrained DC-DC power path control where low gate-threshold operation and tight thermal resistance are critical.

The device operates with V_th = -0.3 to -1.0 V (typ. -0.65 V), enabling reliable turn-on from 1.5 V logic while maintaining robust off-state blocking up to -20 V. Dynamic parameters-including C_iss = 840 pF, Q_g = 12.8 nC, and t_on/t_off = 32/107 ns-support fast, low-loss switching in synchronous buck converters and reverse-polarity protection circuits.

Key Specifications

Pinout & Package

SSM6J422TU,LXHF uses the UF6 surface-mount package (TOSHIBA 2-2T1S), measuring 2.0 × 2.0 × 0.7 mm with 6 terminals and 7.0 mg typical weight. The package supports reflow soldering and provides low thermal resistance to ambient on FR4 boards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMN2011LFG-7 and TPH2R503PL,LQ, the SSM6J422TU,LXHF uniquely combines dual-channel integration, AEC-Q101 qualification, and sub-2 V gate drive in a 2.0 mm² footprint-making it optimal for space- and reliability-critical automotive and portable power switches where channel matching and low-voltage compatibility are essential.

Availability

SSM6J422TU,LXHF is available at Aetrix Electronics and suitable for automotive load switching, USB-C power path control, and battery protection applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SSM6J422TU,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures semiconductor components for automotive, industrial, and consumer applications, with emphasis on reliability, efficiency, and system-level integration.

The SSM6J422TU,LXHF belongs to Toshiba's U-MOS P-channel MOSFET product line, engineered specifically for high-density, low-voltage power management in automotive ECUs and portable electronics where gate-drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum gate-source voltage rating for SSM6J422TU,LXHF?

The SSM6J422TU,LXHF has a gate-source voltage rating of -8 V to +6 V. This asymmetric range reflects its P-channel structure: negative voltage applied to the gate relative to source turns the device on, while positive voltage must be limited to avoid oxide damage. Exceeding ±8 V on the gate risks permanent degradation of the gate dielectric, especially during transient events or improper driver design.

Does SSM6J422TU,LXHF support true dual independent switching?

No-SSM6J422TU,LXHF features a common gate and common source, meaning both P-channel MOSFETs switch simultaneously with identical timing and bias conditions. While this enables synchronized high-side switching and simplifies control, it does not allow independent channel operation. For independent control, two discrete P-MOSFETs or a dedicated dual-gate driver IC would be required.

Is SSM6J422TU,LXHF suitable for reverse-polarity protection in 12 V automotive systems?

Yes-SSM6J422TU,LXHF is qualified to AEC-Q101 and rated for -20 V V_DSS, making it suitable for reverse-polarity protection in 12 V automotive systems. Its R_DS(ON) of 42.7 mΩ at -4.5 V ensures low insertion loss (<51 mV at 1.2 A), and the common-source configuration allows straightforward series placement in the positive rail with gate tied to system ground via appropriate pull-up.

What is the thermal resistance (R_th(ch-a)) of SSM6J422TU,LXHF on a standard FR4 board?

The datasheet does not specify R_th(ch-a) as a fixed value because it depends on PCB layout. However, with a 25.4 mm × 25.4 mm FR4 board and 645 mm² copper pad, the device achieves 1 W power dissipation at T_ch = 150 °C. Using the formula R_th(ch-a) = (T_ch − T_a)/P_D, this implies ~100 °C/W under those specific conditions-confirming suitability for moderate-power applications without heatsinking.

Can SSM6J422TU,LXHF be used in linear regulation mode?

No-SSM6J422TU,LXHF is optimized for switching operation, not linear regulation. Its R_DS(ON) is specified only in saturation, and operating in the linear region risks exceeding the Safe Operating Area (SOA) due to localized heating and uncontrolled thermal runaway. The absolute maximum ratings do not define linear-mode derating curves, and Toshiba explicitly recommends using the device only in switched-mode configurations.