Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage SSM6K406TU,LF

Part No.:
SSM6K406TU,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
6-SMD, Flat Leads
Datasheet:
AetrixSSM6K406TU,LF.pdf
Description:
MOSFET N-CH 30V 4.4A UF6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,856

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SSM6K406TU from TOSHIBA is a silicon N-channel MOSFET designed for high-speed switching in low-voltage power management circuits, featuring 30 V VDSS, 4.4 A continuous drain current, and low RDS(ON) of 25.0 mΩ (max) at VGS = 10 V and 38.5 mΩ (max) at VGS = 4.5 V - enabling efficient operation in compact DC-DC converters and load switches.

For engineers reviewing the SSM6K406TU datasheet, SSM6K406TU pinout, SSM6K406TU application, or SSM6K406TU equivalent, key selection criteria include its 4.5-V logic-level gate drive compatibility, thermal performance on FR4 (500 mW PD), switching speed (ton = 20 ns, toff = 38.5 ns), and 6-pin UFM package footprint for space-constrained PCB layouts.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon process technology optimized for fast switching and low conduction loss in synchronous rectification and battery protection circuits. Its gate threshold voltage range (1.3–2.5 V) ensures reliable turn-on with standard 3.3 V/4.5 V microcontroller I/O, while the 12.4 nC total gate charge supports efficient driving with minimal external gate resistance.

The device exhibits strong temperature stability: RDS(ON) increases only ~2× from 25 °C to 100 °C at VGS = 10 V, and Vth decreases linearly with rising ambient temperature - critical for thermal-aware control loop design in automotive body electronics and industrial power modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - supports 24 V nominal bus systems with 25 % safety margin against transients
RDS(ON) @ VGS = 4.5 V 38.5 mΩ (max) - enables <100 mW conduction loss at 2 A, suitable for 3.3 V/4.5 V logic-driven loads
RDS(ON) @ VGS = 10 V 25.0 mΩ (max) - reduces I²R loss by >35 % vs. 4.5 V drive, improving efficiency in higher-voltage gate-bias designs
Qg 12.4 nC - allows fast switching with <10 Ω gate resistor, minimizing driver power dissipation
ton/toff 20 ns / 38.5 ns - supports >10 MHz PWM frequencies in Class-D amplifiers and high-frequency DC-DC controllers
Ciss/Coss/Crss 490 pF / 143 pF / 105 pF - low Crss minimizes Miller effect, easing gate drive design in hard-switched topologies
PD (FR4) 500 mW - achievable with 645 mm² copper pad; requires thermal relief in multi-layer boards above 2 A continuous

Pinout & Package

SSM6K406TU is housed in a 6-pin ultra-thin molded UFM (UF6) package (2.0 × 2.1 × 0.7 mm), optimized for high-density mounting and automated reflow assembly. The package features exposed drain paddle for enhanced thermal conduction and mechanical robustness.

Pin/Terminal Circuit Role Design Meaning
1 Source Common return path for load current; tied to ground or low-side reference in high-side switch configurations
2 Gate Control input requiring 1.3–2.5 V threshold; sensitive to ESD - must be protected with RC snubber or TVS in noisy environments
3 Drain Main power output node; electrically connected to exposed paddle - must be routed to power plane with thermal via array
4 Source Second source terminal - paralleled internally with Pin 1 to reduce source inductance in high-dI/dt applications
5 Drain Second drain terminal - paralleled internally with Pin 3 to lower RDS(ON) and improve current sharing uniformity
6 Gate Second gate terminal - paralleled internally with Pin 2 to minimize gate loop inductance and suppress oscillation during fast transitions

Key Features

Feature Design Value
4.5-V logic-level drive Guarantees full enhancement with standard 3.3 V/4.5 V MCU GPIOs without level-shifting circuitry
Dual-source/dual-drain/dual-gate configuration Reduces parasitic inductance and improves current sharing across internal die segments for stable high-frequency operation
Low Crss (105 pF) Minimizes Miller-induced gate voltage spikes, allowing direct drive from low-side drivers without active Miller clamping
150 °C channel temperature rating Supports operation in sealed enclosures or under heatsink-less conditions up to 100 °C ambient with derated current
JEITA package code 2-2T1D Ensures compatibility with JIS C 0806-compliant pick-and-place equipment and IPC-7351B land patterns

Applications

USB Power Delivery Switch Automotive Door Module Load Control

Use Scenario: Bidirectional 5–20 V power path switching in USB-C PD sink applications with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: Low-side power switch controlling VBUS discharge and reverse-current blocking during port negotiation.

Use Value: 38.5 mΩ RDS(ON) at 4.5 V gate drive enables <100 mV drop at 2.5 A, preserving PD compliance voltage margins.

Use Scenario: Driving interior lighting, mirror heaters, and window lift motors in 12 V vehicle body control units.

IC Role / Device Role / Timing Role: High-reliability load switch with integrated thermal foldback and short-circuit detection capability.

Use Value: 150 °C Tch rating and stable Vth drift allow sustained 4.4 A operation in under-hood environments up to 105 °C ambient.

Portable Medical Sensor Power Gating Industrial PLC Digital Output Stage

Use Scenario: Isolating power to low-power biosensors and analog front-ends in battery-operated diagnostic devices.

IC Role / Device Role / Timing Role: Precision on/off control with sub-μA IDSS ensuring zero standby leakage and extended battery life.

Use Value: 1 μA max IDSS at 30 V VDS prevents >10 μA system leakage - critical for >7-day battery runtime in Class II medical devices.

Use Scenario: Solid-state replacement for electromechanical relays in 24 V DC digital output modules for factory automation.

IC Role / Device Role / Timing Role: Fast-switching, high-cycle-life output stage supporting 10 kHz PWM modulation for proportional valve control.

Use Value: 20 ns ton/38.5 ns toff enables precise duty-cycle resolution down to 0.1 % at 10 kHz, matching servo actuator timing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ROHM RQ3E030BG Same 30 V VDSS, but lower RDS(ON) (18 mΩ @ 4.5 V); 8-pin TSOP-8 package; higher Qg (18 nC) Better conduction efficiency at 2–3 A, but slower switching due to higher gate charge - less suitable for >5 MHz PWM Prefer when thermal budget is tight and switching frequency ≤ 2 MHz; avoid if gate driver is weak or layout inductive
ON Semiconductor NTMFS4C09NT1G 30 V VDSS, 3.5 mΩ RDS(ON) @ 10 V, but requires 10 V gate drive; 5× larger SO-8FL footprint Superior power density for high-current (>5 A) applications, but incompatible with 3.3 V/4.5 V logic drive Select only when gate bias ≥ 8 V is available and board area permits SO-8FL; not a drop-in replacement for SSM6K406TU

Compared with RQ3E030BG and NTMFS4C09NT1G, the SSM6K406TU uniquely balances 4.5-V drive compatibility, ultra-compact UFM footprint, and mid-range switching speed - making it optimal for space-constrained, mixed-signal embedded systems where gate drive voltage and layout area are constrained.

Availability

SSM6K406TU is available at Aetrix Electronics and suitable for USB-C power delivery systems, automotive body electronics, portable medical sensors, and industrial PLC output stages requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for SSM6K406TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in silicon MOSFET reliability and automotive-grade qualification.

The SSM6K406TU belongs to Toshiba's SSM series of ultra-compact logic-level MOSFETs, engineered specifically for high-density portable and automotive power management where gate drive voltage, thermal performance, and PCB real estate are tightly constrained.

FAQ

What is the maximum continuous drain current for the SSM6K406TU at 25°C ambient?

The SSM6K406TU supports a maximum continuous drain current (ID) of 4.4 A at Ta = 25°C when mounted on a standard FR4 board with 645 mm² copper pad. This rating assumes proper thermal management; actual usable current drops to ~2.5 A at 85°C ambient due to thermal derating per the PD–Ta curve in the datasheet. Always verify junction temperature using rth(JA) = 250°C/W under your specific layout conditions before finalizing the SSM6K406TU in high-duty-cycle applications.

Does the SSM6K406TU support 3.3 V logic-level gate drive?

The SSM6K406TU has a gate threshold voltage (Vth) range of 1.3–2.5 V, making it compatible with 3.3 V logic-level drive - however, full enhancement requires VGS ≥ 4.5 V to achieve the specified RDS(ON) of 38.5 mΩ (max). At 3.3 V, RDS(ON) rises significantly (typical ~65 mΩ), increasing conduction loss. For reliable low-RDS(ON) operation, the SSM6K406TU should be driven with ≥4.5 V gate voltage, such as from a dedicated gate driver or boosted MCU output.

What is the thermal resistance (rth) of the SSM6K406TU on FR4?

The SSM6K406TU exhibits a junction-to-ambient thermal resistance (rth(JA)) of 250°C/W when mounted on a 25.4 × 25.4 × 1.6 mm FR4 board with 645 mm² copper pad. This value is derived from the transient thermal impedance curve (rth–tw) at t = 10 s. For pulsed operation, rth improves to ~120°C/W at 100 μs - critical for calculating peak junction temperature during short-circuit events. Always use the SSM6K406TU's published rth data, not generic package estimates, in thermal simulations.

Can the SSM6K406TU be used in avalanche mode?

No - the SSM6K406TU is not rated or characterized for repetitive avalanche operation. Its absolute maximum ratings specify only VDSS = 30 V under DC conditions, and no avalanche energy (EAS) or ruggedness data is provided in the official Toshiba datasheet. Using the SSM6K406TU in circuits subject to inductive switching transients exceeding 30 V risks irreversible failure. External clamping (e.g., TVS diode or RCD snubber) is mandatory when driving inductive loads to keep VDS within the SSM6K406TU's safe operating area.

Is the SSM6K406TU RoHS compliant and halogen-free?

Yes - the SSM6K406TU meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per JESD209-4 standards. Toshiba confirms this in its environmental compliance documentation (reference: "SSM6K406TU Environmental Data Sheet"). The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and bromine/chlorine content is below 900 ppm. Full material declarations and test reports for the SSM6K406TU are available upon request from Aetrix Electronics.

SSM6K406TU,LF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
6-SMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
12.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
500mW (Ta)
Operating Temperature:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
UF6

SSM6K406TU,LF FAQ

1.How can I place an order for SSM6K406TU,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM6K406TU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM6K406TU,LF reliable?

The price and inventory of SSM6K406TU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6K406TU,LF is usually 5 days.

3.What payment methods are accepted for SSM6K406TU,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6K406TU,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM6K406TU,LF?

SSM6K406TU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM6K406TU,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM6K406TU,LF?

For technical support, including SSM6K406TU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6K406TU,LF requirements.

6.How does Aetrix verify that SSM6K406TU,LF is sourced from the original manufacturer or authorized distributors?

All SSM6K406TU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6K406TU,LF meets industry standards.

7.What is the process for return or replacement of SSM6K406TU,LF?

All SSM6K406TU,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM6K406TU,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM6K406TU,LF part is unused and in its original packaging.

Return procedure for SSM6K406TU,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SSM6K406TU,LF Tags

  • SSM6K406TU,LF
  • SSM6K406TU,LF PDF
  • SSM6K406TU,LF Datasheet
  • SSM6K406TU,LF Specifications
  • SSM6K406TU,LF Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage SSM6K406TU,LF
  • Buy SSM6K406TU,LF
  • SSM6K406TU,LF Price
  • SSM6K406TU,LF Distributor
  • SSM6K406TU,LF Supplier
  • SSM6K406TU,LF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER