Toshiba Semiconductor and Storage SSM6K804R,LF

Overview

SSM6K804R from Toshiba Electronic Devices & Storage Corporation is a dual-channel N-channel U-MOS-H power MOSFET in TSOP6F package, rated for 40 V V_DSS, 12 A continuous drain current, and R_DS(ON) = 12 mΩ (typ.) at V_GS = 4.5 V. It serves as a high-efficiency synchronous rectifier or power switch in compact DC-DC converters and battery-powered load switches.

For engineers reviewing the SSM6K804R datasheet, SSM6K804R pinout, SSM6K804R application, or SSM6K804R equivalent, key selection criteria include its low on-resistance at 4.5-V gate drive, avalanche energy rating of 58.5 mJ, thermal resistance of 83 °C/W on FR4, and dual-drain configuration enabling parallel current handling without external paralleling.

Technical Context

The SSM6K804R integrates two independent N-channel MOSFETs sharing a common source terminal (Pin 4), with four drain terminals (Pins 1, 2, 5, 6) enabling high-current routing and thermal spreading. Its U-MOS-H silicon process delivers enhanced switching speed and reduced gate charge (Q_g = 7.5 nC typ.) while maintaining robust avalanche capability under transient conditions.

Designed for 4.5-V logic-level drive compatibility, the device operates reliably across industrial temperature range (–55 to +175 °C channel temp), with gate threshold voltage (V_th) of 1.4–2.4 V and diode forward voltage (V_DSF) of 0.85 V at 12 A - critical for synchronous rectification efficiency in buck converters.

Key Specifications

Pinout & Package

Package: TSOP6F - ultra-thin surface-mount package (0.8 mm max height), 0.016 g mass, optimized for automated assembly and thermal performance on FR4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3025LSD-13 and SI6954ADQ-T1-GE3, the SSM6K804R provides superior 40 V rating, lower on-resistance at logic-level drive, and guaranteed avalanche ruggedness - making it uniquely suitable for compact, high-reliability DC-DC and motor control designs where voltage margin and transient robustness are critical.

Availability

SSM6K804R is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for SSM6K804R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and automotive-grade quality.

The SSM6K804R belongs to Toshiba's U-MOS-H power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in consumer, industrial, and portable electronics.

FAQ

What is the maximum continuous drain current rating for the SSM6K804R?

The SSM6K804R has a maximum continuous drain current (I_D) rating of 12 A at T_a = 25 °C with device mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm²). Derating applies above 25 °C ambient, and channel temperature must not exceed 175 °C. This rating reflects real-world thermal performance under defined PCB conditions - not idealized heatsink assumptions.

Does the SSM6K804R support 3.3 V gate drive?

Yes, the SSM6K804R supports 3.3 V gate drive due to its low gate threshold voltage (V_th = 1.4–2.4 V) and specified R_DS(ON) = 12 mΩ (typ.) at V_GS = 4.5 V. While full enhancement occurs at ≥4.5 V, usable conduction begins at 3.3 V - however, designers should verify actual R_DS(ON) and power loss at 3.3 V using Fig. 8.3 (R_DS(ON) vs. V_GS) from the SSM6K804R datasheet.

How is the TSOP6F package of the SSM6K804R thermally optimized?

The TSOP6F package of the SSM6K804R uses exposed drain pads (Pins 1, 2, 5, 6) to maximize thermal transfer to the PCB copper plane. With R_th(ch-a) = 83 °C/W on a standard FR4 board, thermal performance relies on proper solder mask opening and thermal via placement under the drain pads. The 0.016 g mass and 0.8 mm profile also minimize mechanical stress during thermal cycling.

Can the SSM6K804R be used in synchronous rectification applications?

Yes, the SSM6K804R is well-suited for synchronous rectification due to its low R_DS(ON) (9 mΩ typ. at V_GS = 10 V), low V_DSF (0.85 V typ. at 12 A), and fast switching characteristics (t_on = 24 ns, t_off = 35 ns). Its dual-channel structure allows interleaved or parallel rectifier configurations in multiphase buck converters without gate timing mismatch issues.

What is the significance of the SSM6K804R's single-pulse avalanche energy rating?

The SSM6K804R's single-pulse avalanche energy (E_AS) is rated at 58.5 mJ under defined test conditions (V_DD = 32 V, L = 1 mH, R_G = 25 Ω). This specification validates its ability to absorb inductive energy during unclamped inductive switching events - such as freewheeling in motor drivers or secondary-side switching in flyback converters - without failure, reducing or eliminating the need for external snubber circuits.