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Toshiba Semiconductor and Storage SSM6K810R,LF
- Part No.:
- SSM6K810R,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 6-SMD, Flat Leads
- Datasheet:
-
SSM6K810R,LF.pdf
- Description:
- SMALL SIGNAL MOSFET N-CH VDSS=10
- Quantity:
- Payment:
- Shipping:
Inventory:5,744
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Product details
Overview
SSM6K810R,LF from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel MOSFET (U-MOS-H) designed for high-efficiency power switching in compact DC-DC converters and automotive-grade power management switches. It features RDS(ON) = 65 mΩ (typ.) at VGS = 4.5 V, 100 V VDSS, and AEC-Q101 qualification for under-hood automotive applications.
For engineers reviewing the SSM6K810R,LF datasheet, SSM6K810R,LF pinout, SSM6K810R,LF application, or SSM6K810R,LF equivalent, key selection criteria include its TSOP6F package thermal resistance (Rth(ch-a) = 83 °C/W), low gate charge (Qg = 3.2 nC typ.), and dual-drain configuration enabling high-current density layout in space-constrained power stages.
Technical Context
The SSM6K810R,LF integrates six internal MOSFET cells in a single TSOP6F package with shared drain terminals (pins 1,2,5,6), one gate (pin 3), and one source (pin 4), forming a monolithic dual-drain structure optimized for synchronous rectification and high-side/low-side switch pairing. Its U-MOS-H process delivers enhanced channel density and reduced specific on-resistance versus prior generations.
This device operates with 4.5-V logic-level gate drive compatibility and supports continuous channel temperatures up to 175 °C, meeting AEC-Q101 stress test requirements for automotive power electronics. Its dynamic parameters-including Ciss = 430 pF, tr = 9 ns, and Qgd = 1.5 nC-enable fast, low-loss switching in 300 kHz–1 MHz DC-DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports input rails up to 48 V nominal systems with margin for transients in automotive and industrial DC-DC converters. |
| RDS(ON) @ 4.5 V | 65 mΩ (typ.) - Enables <1 W conduction loss at 4 A DC, critical for thermally constrained point-of-load regulators. |
| Qg | 3.2 nC (typ.) - Reduces gate drive power and enables efficient operation with low-side gate drivers like TC4427 or similar. |
| ID (DC) | 3.5 A - Rated current compatible with TSOP6F thermal limits when mounted on 645 mm² Cu pad on FR4. |
| Rth(ch-a) | 83 °C/W - Defines maximum power dissipation (1.8 W) before exceeding 175 °C channel temperature at 25 °C ambient. |
| EAS | 21.4 mJ - Specifies single-pulse avalanche energy handling capability during inductive turn-off events in buck or flyback circuits. |
Pinout & Package
Package: TSOP6F (0.95 mm height, 0.016 g typical weight), surface-mount, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (common internal connection) | Four parallel drain terminals reduce bond wire inductance and improve current sharing across internal dies; requires unified PCB copper pour. |
| 3 | Gate | Single control node for all internal MOSFET cells; requires low-impedance gate routing to minimize ringing and ensure clean 4.5 V switching. |
| 4 | Source | Common source terminal tied to power ground plane; must be connected to large thermal pad for heat extraction and low-inductance return path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power modules per stress test requirements including HTGB, HTRB, and temperature cycling-enables use in engine control units and ADAS power supplies. |
| U-MOS-H process technology | Delivers lower RDS(ON) × area than standard Trench MOSFETs, allowing higher current density in TSOP6F footprint without derating. |
| 4.5-V gate drive compatibility | Eliminates need for level-shifting circuitry when driven directly by 3.3 V or 5 V microcontrollers or PWM controllers such as LM5116. |
| Low Qgd/Qg ratio | Qgd = 1.5 nC / Qg = 3.2 nC ≈ 0.47 - Improves hard-switching efficiency and reduces Miller-induced shoot-through risk in half-bridge configurations. |
Applications
| Automotive Power Management | Industrial DC-DC Converters |
|---|---|
Use Scenario: High-side load switch in 12 V/48 V dual-battery automotive subsystems (e.g., infotainment power rail sequencing). IC Role / Device Role: N-channel high-side switch with integrated charge pump not required due to 4.5 V gate drive compatibility. Use Value: Enables direct control from 5 V MCU GPIO while maintaining RDS(ON) ≤ 65 mΩ, reducing system component count and board area. | Use Scenario: Synchronous rectifier in isolated 24 V input, 5 V/6 A output flyback converter for factory automation I/O modules. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency above 75% load. Use Value: Achieves >92% peak efficiency at full load due to 51 mΩ RDS(ON) at 10 V drive and low Coss (160 pF), minimizing reverse recovery losses. |
| Server Point-of-Load Regulators | LED Driver Power Stages |
Use Scenario: High-frequency (600 kHz) buck converter stage supplying core voltage to FPGA or ASIC in telecom baseband cards. IC Role / Device Role: Low-side switch in multiphase buck topology with external controller (e.g., ISL95812). Use Value: Qg = 3.2 nC and tr = 9 ns support stable 600 kHz operation with <5% duty cycle loss, improving transient response and power density. | Use Scenario: Constant-current switch in 48 V input, multi-string LED driver for commercial lighting fixtures. IC Role / Device Role: PWM-controlled main power switch driving boost/buck-boost LED current regulator ICs. Use Value: 100 V VDSS accommodates LED string voltage swings up to 42 V plus 20% margin, while 175 °C Tch rating ensures reliability in enclosed luminaires. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30 V VDSS, RDS(ON) = 26 mΩ @ 4.5 V, SO-8 package, non-AEC-Q101 | Limited to ≤24 V input systems; unsuitable for 48 V automotive or industrial rails | Select only for cost-sensitive, non-automotive 12 V DC-DC where lower voltage rating is acceptable. |
| IPD25N04S4-05 | 40 V VDSS, RDS(ON) = 4.5 mΩ @ 10 V, TO-252 package, AEC-Q101 qualified | Higher current (25 A), larger footprint, requires 10 V gate drive for optimal RDS(ON) | Choose when higher current capacity and thermal mass are needed, but gate drive voltage and board space permit larger package. |
Compared with DMN3026LSD-13 and IPD25N04S4-05, the SSM6K810R,LF uniquely balances 100 V rating, 4.5 V drive, AEC-Q101 compliance, and ultra-compact TSOP6F footprint-making it optimal for space- and voltage-constrained automotive and industrial DC-DC power stages where gate drive simplicity and thermal performance are prioritized over raw current rating.
Availability
SSM6K810R,LF is available at Aetrix Electronics and suitable for automotive power management switches, industrial DC-DC converters, and server point-of-load regulators requiring stable component supply and long-term lifecycle assurance.
Supply support for SSM6K810R,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and computing applications.
The SSM6K810R,LF belongs to Toshiba's U-MOS-H series of logic-level N-channel MOSFETs engineered specifically for high-efficiency, high-reliability power switching in space-constrained automotive and industrial power supplies.
FAQ
What is the maximum continuous drain current for SSM6K810R,LF at 100 °C ambient temperature?
The SSM6K810R,LF supports 3.5 A DC current at Ta = 25 °C with specified board conditions (FR4, 645 mm² Cu). At 100 °C ambient, derating applies: using Rth(ch-a) = 83 °C/W and Tch(max) = 175 °C, maximum allowable power is (175 − 100)/83 ≈ 0.9 W. With RDS(ON) = 65 mΩ, this corresponds to ID ≈ √(0.9 / 0.065) ≈ 3.7 A - however, absolute maximum rating remains 3.5 A regardless of ambient, per datasheet Section 5.
Does SSM6K810R,LF require a gate resistor for EMI suppression in automotive applications?
Yes, the SSM6K810R,LF benefits from an external gate resistor (typically 5–22 Ω) to control dV/dt and reduce EMI in automotive environments. Its low Qg (3.2 nC) and fast tr (9 ns) make it susceptible to ringing without proper gate damping; design guidelines in Toshiba Application Note "AN-6001" recommend gate resistors sized to limit peak dV/dt to <10 V/ns in 12 V systems.
Is SSM6K810R,LF pin-compatible with other TSOP6F-packaged MOSFETs like SSM6N15FU?
No, SSM6K810R,LF is not pin-compatible with SSM6N15FU. While both use TSOP6F, SSM6K810R,LF has pins 1/2/5/6 as drains and pin 4 as source, whereas SSM6N15FU uses a different internal configuration (dual N-channel with independent sources). Pin mapping must be verified per each device's datasheet; no drop-in replacement is supported.
What is the significance of the ",LF" suffix in SSM6K810R,LF?
The ",LF" suffix in SSM6K810R,LF indicates lead-free and RoHS-compliant packaging per JEDEC J-STD-609. It denotes that the TSOP6F package uses matte tin plating and meets EU RoHS Directive 2011/65/EU requirements, with no exemptions applied. This version is intended for environmentally regulated markets and replaces legacy leaded variants.
Can SSM6K810R,LF be used in linear mode (as a pass transistor) for hot-swap applications?
The SSM6K810R,LF is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) curve (Fig. 9.11) shows limited second breakdown capability at low VDS and high ID; continuous linear operation risks thermal runaway due to positive temperature coefficient of RDS(ON). For hot-swap use, dedicated hot-swap controllers (e.g., LTC4215) paired with MOSFETs rated for SOA compliance are recommended instead of SSM6K810R,LF.
SSM6K810R,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 6-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 69mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.2 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 430 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP-F
SSM6K810R,LF FAQ
1.How can I place an order for SSM6K810R,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM6K810R,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM6K810R,LF reliable?
The price and inventory of SSM6K810R,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6K810R,LF is usually 5 days.
3.What payment methods are accepted for SSM6K810R,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6K810R,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM6K810R,LF?
SSM6K810R,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM6K810R,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM6K810R,LF?
For technical support, including SSM6K810R,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6K810R,LF requirements.
6.How does Aetrix verify that SSM6K810R,LF is sourced from the original manufacturer or authorized distributors?
All SSM6K810R,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6K810R,LF meets industry standards.
7.What is the process for return or replacement of SSM6K810R,LF?
All SSM6K810R,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM6K810R,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM6K810R,LF part is unused and in its original packaging.
Return procedure for SSM6K810R,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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