Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage SSM6K810R,LXHF

Name: SSM6K810R,LXHF
Brand: Toshiba Semiconductor and Storage
SKU: SSM6K810R,LXHF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SSM6K810R,LXHF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 6-SMD, Flat Leads

Datasheet:: SSM6K810R,LXHF.pdf

Description:: AUTO AEC-Q SS MOS N-CH LOGIC-LEV

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,930

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SSM6K810R,LXHF from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET in TSOP6F package, rated for 100 V V_DSS, 3.5 A continuous drain current, and 65 mΩ R_DS(ON) at 4.5 V gate drive. It serves as a high-efficiency synchronous rectifier or low-side switch in automotive-grade DC-DC converters and power management systems.

For engineers reviewing the SSM6K810R,LXHF datasheet, SSM6K810R,LXHF pinout, SSM6K810R,LXHF application, or SSM6K810R,LXHF equivalent, key selection criteria include its AEC-Q101 qualification, 4.5-V logic-level gate drive compatibility, low on-resistance at low V_GS, thermal robustness to 175 °C channel temperature, and TSOP6F footprint suitability for space-constrained automotive power stages.

Technical Context

This dual-drain configuration MOSFET integrates six terminals in a single TSOP6F package with three internal parallel-connected N-channel devices sharing common source and gate connections - pins 1/2/5/6 are drains, pin 3 is gate, and pin 4 is source. Its U-MOS-H structure enables reduced specific on-resistance and improved switching performance over conventional planar MOSFETs.

The device operates under strict AEC-Q101 stress testing including HTGB, HTRB, and UIS, with absolute maximum channel temperature of 175 °C and guaranteed R_th(ch-a) ≤ 83 °C/W on standard FR4 board (25.4 mm × 25.4 mm, 645 mm² Cu pad), supporting thermally demanding automotive ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V automotive bus and 24 V industrial DC-DC input stages without derating
R_DS(ON) @ 4.5 V	65 mΩ (typ.) - enables efficient 3.5 A continuous conduction with <150 mW conduction loss at full load
I_D (DC)	3.5 A - rated for sustained current in compact power switches with adequate PCB copper area
T_ch(max)	175 °C - qualified for under-hood automotive environments per AEC-Q101 thermal stress requirements
C_iss	430 pF (typ.) - determines gate drive strength requirement and impacts switching speed in 100 kHz–1 MHz converters
Q_g	3.2 nC (typ.) - defines total gate charge needed for full turn-on, critical for optimizing driver IC selection
V_th	1.5–2.5 V - ensures reliable enhancement-mode operation with margin against noise-induced turn-on

Pinout & Package

TSOP6F surface-mount package: 1.6 mm height, 2.9 mm × 1.6 mm body, 0.65 mm pitch, 0.016 g typical weight. Designed for automated reflow assembly and high-density layout in automotive control modules.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Internal connection to one of three parallel N-channel MOSFET cells; tied to power rail
2	Drain	Internal connection to second parallel MOSFET cell; electrically identical to Pin 1
3	Gate	Control terminal for all three internal MOSFETs; requires 4.5 V minimum for full enhancement
4	Source	Common source node for all internal MOSFETs; reference point for gate drive and current sensing
5	Drain	Internal connection to third parallel MOSFET cell; shares same potential as Pins 1 and 2
6	Drain	Redundant drain terminal enhancing current handling and thermal spreading across package leads

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, ADAS power supplies, and body electronics
4.5-V gate drive	Compatible with standard 5 V microcontroller GPIO and low-voltage PWM controllers without level-shifting
Low R_DS(ON) at 4.5 V	65 mΩ typ. enables >95% efficiency in 12 V–48 V buck converters operating at 3–5 A output
U-MOS-H structure	Reduces specific on-resistance and improves figure-of-merit (R_DS(ON) × Q_g) for faster switching with lower losses
TSOP6F footprint	Enables high-current density layout with four drain pads for enhanced thermal dissipation and current sharing

Applications

Automotive DC-DC Converters	Industrial Power Management Switches
Use Scenario: Step-down conversion from 48 V battery to 12 V subsystem rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 200–500 kHz buck converter topology. Use Value: 65 mΩ R_DS(ON) at 4.5 V reduces conduction loss by ~30% vs. non-AEC-Q101 alternatives, improving thermal margin at 175 °C channel rating.	Use Scenario: Remote-controlled 24 V load switch for factory automation I/O modules. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled via isolated digital signal. Use Value: AEC-Q101 qualification ensures long-term reliability under vibration, thermal cycling, and ESD exposure in uncontrolled industrial environments.
On-Board Charger Auxiliary Supplies	LED Driver Current Regulation
Use Scenario: Auxiliary 12 V supply generation from 400 V traction battery in EV on-board chargers. IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter powering MCU, sensors, and gate drivers. Use Value: 100 V V_DSS and 21.4 mJ single-pulse avalanche energy support safe operation during transient overvoltage events in high-voltage battery systems.	Use Scenario: Constant-current regulation stage for high-brightness LED arrays in automotive lighting. IC Role / Device Role / Timing Role: PWM-controlled current sink in linear+switching hybrid LED driver architecture. Use Value: Low gate charge (3.2 nC) and fast switching times (tr = 9 ns, tf = 7 ns) minimize transition losses during high-frequency dimming.

Automotive DC-DC Converters

Industrial Power Management Switches

Use Scenario: Step-down conversion from 48 V battery to 12 V subsystem rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 200–500 kHz buck converter topology.

Use Value: 65 mΩ R_DS(ON) at 4.5 V reduces conduction loss by ~30% vs. non-AEC-Q101 alternatives, improving thermal margin at 175 °C channel rating.

Use Scenario: Remote-controlled 24 V load switch for factory automation I/O modules.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled via isolated digital signal.

Use Value: AEC-Q101 qualification ensures long-term reliability under vibration, thermal cycling, and ESD exposure in uncontrolled industrial environments.

On-Board Charger Auxiliary Supplies

LED Driver Current Regulation

Use Scenario: Auxiliary 12 V supply generation from 400 V traction battery in EV on-board chargers.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter powering MCU, sensors, and gate drivers.

Use Value: 100 V V_DSS and 21.4 mJ single-pulse avalanche energy support safe operation during transient overvoltage events in high-voltage battery systems.

Use Scenario: Constant-current regulation stage for high-brightness LED arrays in automotive lighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink in linear+switching hybrid LED driver architecture.

Use Value: Low gate charge (3.2 nC) and fast switching times (tr = 9 ns, tf = 7 ns) minimize transition losses during high-frequency dimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	30 V V_DSS, 6.2 A I_D, SO-8 package, R_DS(ON) = 26 mΩ @ 4.5 V	Lower voltage rating limits use to ≤24 V systems; higher current but not AEC-Q101 qualified	Select only for non-automotive 24 V industrial switching where higher current and lower R_DS(ON) outweigh qualification needs
IPD250N04LG	40 V V_DSS, 250 A pulsed, TO-252 package, R_DS(ON) = 1.4 mΩ @ 10 V, not 4.5-V optimized	Requires 10 V gate drive for optimal R_DS(ON); larger footprint and no AEC-Q101 certification	Prefer for high-current 12 V battery switches needing ultra-low on-resistance, but not for 48 V or automotive-qualified designs

Compared with DMN3026LSD-13 and IPD250N04LG, the SSM6K810R,LXHF uniquely balances 100 V capability, 4.5-V logic-level drive, AEC-Q101 compliance, and TSOP6F compactness - making it the only viable option for space-constrained, thermally aggressive, automotive-grade 48 V DC-DC power stages requiring no gate driver boost.

Availability

SSM6K810R,LXHF is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial power management switches, and on-board charger auxiliary supplies requiring stable component supply, long lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for SSM6K810R,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and consumer reliability standards.

The SSM6K810R,LXHF belongs to Toshiba's U-MOS-H automotive-qualified MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in 12 V–48 V automotive electrical architectures.

FAQ

What is the gate threshold voltage range for SSM6K810R,LXHF?

The SSM6K810R,LXHF has a gate threshold voltage (V_th) range of 1.5 V to 2.5 V at I_D = 0.1 mA, ensuring reliable turn-on with 4.5 V gate drive while maintaining noise immunity. This V_th window allows stable operation across temperature and process variation, and is verified per AEC-Q101 test conditions. The SSM6K810R,LXHF must be driven above 2.5 V for full enhancement in production circuits.

Is SSM6K810R,LXHF suitable for high-temperature under-hood automotive applications?

Yes, the SSM6K810R,LXHF is AEC-Q101 qualified with a maximum channel temperature of 175 °C and thermal resistance R_th(ch-a) ≤ 83 °C/W on standard FR4. Its U-MOS-H structure and TSOP6F package enable stable operation in under-hood environments such as engine control units and ADAS power supplies. The SSM6K810R,LXHF meets all thermal stress requirements defined in AEC-Q101 Rev G.

What is the R_DS(ON) value of SSM6K810R,LXHF at 10 V gate drive?

The SSM6K810R,LXHF exhibits a typical R_DS(ON) of 51 mΩ at V_GS = 10 V and I_D = 2 A, measured at T_a = 25 °C. This value reflects improved channel conductivity at higher gate voltage, offering lower conduction loss than the 65 mΩ at 4.5 V. Designers using 10 V gate drivers can expect reduced steady-state power dissipation in the SSM6K810R,LXHF compared to 4.5 V operation.

Does SSM6K810R,LXHF have integrated body diode functionality?

Yes, the SSM6K810R,LXHF includes an inherent parasitic body diode with typical forward voltage V_DSF = 0.9 V at I_DR = 3.5 A and V_GS = 0 V. This diode supports freewheeling current in inductive switching applications like buck converters. Its characteristics are fully characterized in the datasheet (Section 7.5), and the SSM6K810R,LXHF body diode recovery behavior is consistent with U-MOS-H process design.

How many internal MOSFET cells does SSM6K810R,LXHF contain?

The SSM6K810R,LXHF integrates three parallel-connected N-channel MOSFET cells within a single TSOP6F package, sharing a common gate and source. Pins 1, 2, 5, and 6 are all internally connected to drain nodes of these cells - enabling higher current handling and improved thermal distribution. This multi-cell architecture is explicitly confirmed in the "Packaging and Internal Circuit" section of the official Toshiba datasheet for SSM6K810R,LXHF.

SSM6K810R,LXHF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 6-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 69mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 3.2 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 430 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP-F

SSM6K810R,LXHF FAQ

1.How can I place an order for SSM6K810R,LXHF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM6K810R,LXHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM6K810R,LXHF reliable?

The price and inventory of SSM6K810R,LXHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6K810R,LXHF is usually 5 days.

3.What payment methods are accepted for SSM6K810R,LXHF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6K810R,LXHF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM6K810R,LXHF?

SSM6K810R,LXHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM6K810R,LXHF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM6K810R,LXHF?

For technical support, including SSM6K810R,LXHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6K810R,LXHF requirements.

6.How does Aetrix verify that SSM6K810R,LXHF is sourced from the original manufacturer or authorized distributors?

All SSM6K810R,LXHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6K810R,LXHF meets industry standards.

7.What is the process for return or replacement of SSM6K810R,LXHF?

All SSM6K810R,LXHF units undergo pre-shipment inspection (PSI). If there is an issue with SSM6K810R,LXHF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM6K810R,LXHF part is unused and in its original packaging.

Return procedure for SSM6K810R,LXHF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…