Toshiba Semiconductor and Storage SSM6K819R,LXHF
- Part No.:
- SSM6K819R,LXHF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 6-SMD, Flat Leads
- Datasheet:
-
SSM6K819R,LXHF.pdf
- Description:
- AUTO AEC-Q SS MOS N-CH LOGIC-LEV
- Quantity:
- Payment:

- Shipping:

Inventory:5,548
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Product details
Overview
SSM6K819R,LXHF from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel MOSFET (U-MOS-H) designed for high-speed power switching in compact DC-DC converters and load switches. It delivers RDS(ON) = 25.8 mΩ (typ.) at VGS = 4.5 V, supports 100 V drain-source voltage, and handles 10 A DC drain current in TSOP6F package.
For engineers reviewing the SSM6K819R,LXHF datasheet, SSM6K819R,LXHF pinout, SSM6K819R,LXHF application, or SSM6K819R,LXHF equivalent, this device is especially relevant when selecting AEC-Q101-qualified discrete MOSFETs for automotive-grade power management with low gate drive voltage compatibility and verified avalanche ruggedness.
Technical Context
The SSM6K819R,LXHF integrates six parallel N-channel U-MOS-H cells in a single TSOP6F package, enabling high-current capability without external paralleling. Its 4.5-V gate drive threshold and low RDS(ON) support direct interfacing with 3.3-V/5-V logic controllers and microcontrollers.
It features guaranteed single-pulse avalanche energy of 12.3 mJ and channel temperature rating up to 175 °C, making it suitable for transient-overload conditions in automotive body electronics and industrial power supplies where thermal robustness is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports 48-V automotive and industrial bus systems with margin against transients. |
| RDS(ON) @ 4.5 V | 25.8 mΩ (typ.) - Enables efficient 10-A switching with ≤260 mW conduction loss at rated current. |
| ID (DC) | 10 A - Delivers full-rated current in thermally constrained layouts using standard FR4 PCB copper area. |
| EAS | 12.3 mJ - Withstands inductive turn-off surges in relay drivers and motor control without clamping diodes. |
| Qg | 8.5 nC (typ.) - Allows fast switching with moderate gate driver strength (e.g., TC4427 or similar). |
| Rth(ch-a) | 83 °C/W - Requires ≥645 mm² Cu pad on FR4 for safe operation at full DC current. |
| Vth | 1.5–2.5 V - Ensures reliable turn-on with 3.3-V logic while avoiding spurious activation from noise. |
Pinout & Package
TSOP6F surface-mount package (0.016 g, 2.9 × 2.8 × 0.8 mm), optimized for automated assembly and thermal performance on standard PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain | Four parallel drain terminals reduce package inductance and improve current sharing across internal dies. |
| 3 | Gate | Single gate input controlling all six internal MOSFET cells; compatible with 4.5-V logic-level drive. |
| 4 | Source | Common source terminal; serves as reference node for gate drive and current sensing in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including body control modules and lighting drivers per stress test requirements. |
| Low RDS(ON) at 4.5 V | 25.8 mΩ typ. enables use with 3.3-V/5-V MCUs without level-shifting circuitry. |
| High avalanche energy rating | 12.3 mJ single-pulse capability reduces need for external snubbers in inductive load switching. |
| Thermally enhanced TSOP6F | Four-drain-pin layout improves heat spreading and lowers effective Rth(j-a) vs. standard SO-8 equivalents. |
| ESD-protected structure | HBM rating >2 kV ensures robustness during board assembly and handling per JESD22-A114. |
Applications
| Automotive Body Control Unit | Industrial DC-DC Load Switch |
|---|---|
Use Scenario: Controlling 12-V/24-V solenoids, fans, and LED arrays in vehicle door modules and seat controls. IC Role / Device Role / Timing Role: High-side power switch managing load enable/disable with fast rise/fall times (27 ns/8 ns). Use Value: AEC-Q101 qualification and 175 °C channel rating ensure reliability in under-hood temperature cycling. | Use Scenario: Enabling/disabling secondary rails in programmable power supplies and PLC I/O modules. IC Role / Device Role / Timing Role: Low-loss load switch with minimal voltage drop (<260 mV at 10 A) and no reverse leakage path. Use Value: 25.8 mΩ RDS(ON) at 4.5 V eliminates need for gate boosters or charge pumps in 5-V control architectures. |
| Server VRM High-Side Switch | USB-C Power Delivery Switch |
Use Scenario: High-efficiency 48-V intermediate bus switching in telecom and data center power stages. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET used in synchronous buck high-side position with 46 ns turn-on time. Use Value: 8.5 nC total gate charge enables <100 ns switching transitions with standard gate drivers. | Use Scenario: Bidirectional 20-V power path control in USB-C PD sink/source negotiation circuits. IC Role / Device Role / Timing Role: Dual-role power switch supporting both sourcing and sinking via external control logic. Use Value: 100 V VDSS headroom accommodates 20-V PD profiles plus safety margins and transient spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LFG-7 | 60 V VDSS, 16.5 mΩ @ 4.5 V, SOT-23-6 package, non-AEC-Q101 | Limited to ≤60 V systems; lacks automotive qualification and avalanche rating | Preferred for cost-sensitive 5-V logic-controlled consumer power switches where 100 V rating is unnecessary. |
| IPB057N10N5ATMA1 | 100 V VDSS, 5.7 mΩ @ 10 V, TO-263 package, AEC-Q101, higher gate charge (42 nC) | Requires 10-V gate drive; larger footprint and higher drive power demand | Selected when ultra-low RDS(ON) justifies larger package and gate driver redesign in high-current automotive inverters. |
Compared with DMN6016LFG-7 and IPB057N10N5ATMA1, the SSM6K819R,LXHF uniquely balances 100 V rating, 4.5-V drive compatibility, AEC-Q101 compliance, and compact TSOP6F packaging-making it optimal for space-constrained, automotive-qualified 10-A switching where gate drive simplicity and thermal efficiency are prioritized.
Availability
SSM6K819R,LXHF is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC load switching, and server VRM high-side applications requiring stable component supply and long-term lifecycle assurance.
Supply support for SSM6K819R,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on automotive, industrial, and computing markets.
The SSM6K819R,LXHF belongs to Toshiba's U-MOS-H series of high-speed, low-RDS(ON) N-channel MOSFETs engineered specifically for AEC-Q101-compliant power switching in compact, thermally demanding environments.
FAQ
What is the maximum continuous drain current for SSM6K819R,LXHF at 85°C ambient?
The SSM6K819R,LXHF supports 10 A DC drain current at Ta = 25°C with specified FR4 board conditions. At 85°C ambient, derating applies: using Rth(ch-a) = 83°C/W and Tch(max) = 175°C, the practical continuous current drops to approximately 6.5 A. Always verify thermal design with actual board layout and airflow in the final application before committing to SSM6K819R,LXHF.
Is SSM6K819R,LXHF pin-compatible with other TSOP6F-packaged MOSFETs?
No-SSM6K819R,LXHF has a unique 4-drain/1-gate/1-source pin assignment (pins 1,2,5,6 = Drain; pin 3 = Gate; pin 4 = Source). Other TSOP6F MOSFETs may differ in pinout, such as dual-channel or logic-level variants. Always confirm pin mapping using the official Toshiba SSM6K819R,LXHF datasheet before PCB layout or replacement.
Does SSM6K819R,LXHF include an integrated body diode, and what is its forward voltage?
Yes, the SSM6K819R,LXHF includes a parasitic body diode inherent to its N-channel MOSFET structure. Its typical forward voltage (VDSF) is 0.88 V at IDR = 10 A and VGS = 0 V, with a maximum of 1.5 V. This diode supports freewheeling in inductive loads but is not optimized for continuous conduction-external Schottky diodes are recommended for high-frequency synchronous rectification.
What gate resistor value is recommended for driving SSM6K819R,LXHF in a 100-kHz switching application?
For 100-kHz operation, a 10 Ω to 22 Ω gate resistor balances switching speed and EMI. With Qg = 8.5 nC and typical gate driver output impedance, this range achieves ~50–100 ns rise/fall times-well within the SSM6K819R,LXHF's 27 ns/8 ns specs. Lower values increase dV/dt and risk ringing; higher values slow switching and raise conduction losses. Thermal testing with actual SSM6K819R,LXHF layout is advised.
Can SSM6K819R,LXHF be used in high-side configuration with bootstrap gate drive?
Yes-the SSM6K819R,LXHF is suitable for high-side N-channel switching using bootstrap gate drive, provided VGS remains within ±20 V and the bootstrap capacitor sustains ≥4.5 V during conduction. Its 100 V VDSS and 175 °C channel rating support common high-side applications like BLDC pre-drivers and automotive lamp control. Ensure dead-time control prevents shoot-through when paired with low-side switches.
SSM6K819R,LXHF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25.8mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.5 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1110 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP-F
SSM6K819R,LXHF FAQ
1.How can I place an order for SSM6K819R,LXHF through Aetrix?
Please submit a Request for Quotation (RFQ) for SSM6K819R,LXHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SSM6K819R,LXHF reliable?
The price and inventory of SSM6K819R,LXHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6K819R,LXHF is usually 5 days.
3.What payment methods are accepted for SSM6K819R,LXHF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6K819R,LXHF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SSM6K819R,LXHF?
SSM6K819R,LXHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SSM6K819R,LXHF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SSM6K819R,LXHF?
For technical support, including SSM6K819R,LXHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6K819R,LXHF requirements.
6.How does Aetrix verify that SSM6K819R,LXHF is sourced from the original manufacturer or authorized distributors?
All SSM6K819R,LXHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6K819R,LXHF meets industry standards.
7.What is the process for return or replacement of SSM6K819R,LXHF?
All SSM6K819R,LXHF units undergo pre-shipment inspection (PSI). If there is an issue with SSM6K819R,LXHF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SSM6K819R,LXHF part is unused and in its original packaging.
Return procedure for SSM6K819R,LXHF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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