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Toshiba Semiconductor and Storage SSM6P41FE(TE85L,F)

Name: SSM6P41FE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: SSM6P41FE(TE85L,F)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM6P41FE(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: SSM6P41FE(TE85L,F).pdf

Description:: MOSFET 2P-CH 20V 0.72A ES6

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Inventory:10,848

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Product details

Overview

SSM6P41FE(TE85L,F) from Toshiba is a dual-channel P-channel enhancement-mode MOSFET in a 6-pin ES6 package, designed for low-voltage power management switching. It delivers R_DS(ON) = 0.30 Ω (max) at V_GS = −4.5 V, supports 1.5-V gate drive, and operates with V_DSS = −20 V and continuous drain current up to −720 mA per channel - ideal for compact battery-powered load switches.

For engineers reviewing the SSM6P41FE(TE85L,F) datasheet, SSM6P41FE(TE85L,F) pinout, SSM6P41FE(TE85L,F) application, or SSM6P41FE(TE85L,F) equivalent, key selection criteria include guaranteed 1.5-V logic-level turn-on capability, dual independent channel configuration, thermal performance on FR4 boards, and verified low R_DS(ON) across −1.5 V to −4.5 V gate bias.

Technical Context

This device integrates two identical P-channel U-MOS-V silicon MOSFETs in a single ES6 package, sharing no internal connection between channels except substrate tie. Each channel features independently controllable gate terminals and exhibits matched threshold voltage (V_th = −0.3 to −1.0 V) and transconductance (|Y_fs| = 850 mS typ).

Switching behavior is characterized by total gate charge Q_g = 1.76 nC, gate-drain charge Q_gd = 0.54 nC, and fast turn-off time t_off = 38 ns under V_GS = 0 to −2.5 V with 50-Ω gate resistance - enabling efficient operation in DC-DC converter synchronous rectification and high-side load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−20 V: Maximum blocking voltage before avalanche conduction begins in each channel.
R_DS(ON) @ V_GS = −4.5 V	0.30 Ω (max): Enables ≤216 mW conduction loss at −720 mA per channel.
V_th	−0.3 to −1.0 V: Ensures reliable turn-on with 1.5-V logic-level gate drive.
Q_g	1.76 nC: Determines gate driver power requirement and switching speed in PWM applications.
P_D (FR4 board)	150 mW (total): Thermal limit when mounted on standard 25.4 mm × 25.4 mm × 1.6 mm FR4 with 6× 0.135 mm² copper pads.
C_iss	110 pF: Input capacitance affecting gate drive loop stability and rise time.
t_off	38 ns: Critical for minimizing dead-time losses in synchronous buck converters.

Pinout & Package

SSM6P41FE(TE85L,F) uses the ES6 surface-mount package (2.0 × 1.6 × 0.55 mm), optimized for space-constrained portable electronics. The package has six leads with exposed drain pads for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1	Source₁	Source terminal of first P-channel MOSFET; tied internally to package substrate.
2	Gate₁	Independent gate control input for first channel; requires negative bias relative to Source₁.
3	Drain₂	Drain terminal of second P-channel MOSFET; electrically isolated from Drain₁.
4	Source₂	Source terminal of second P-channel MOSFET; tied internally to same substrate as Source₁.
5	Gate₂	Independent gate control input for second channel; fully decoupled from Gate₁.
6	Drain₁	Drain terminal of first P-channel MOSFET; thermally connected to exposed pad.

Key Features

Feature	Design Value
1.5-V gate drive compatibility	Guaranteed turn-on at V_GS = −1.5 V (R_DS(ON) ≤ 1.04 Ω), enabling direct interface with low-voltage microcontrollers.
Dual independent P-channel topology	Two fully isolated MOSFETs share only substrate connection - supports separate load switching or complementary half-bridge configurations.
U-MOS-V trench process	Delivers 30% lower R_DS(ON) vs. prior U-MOS-IV generation at same die size, improving power density in portable designs.
Low gate charge (Q_g = 1.76 nC)	Reduces gate driver power consumption and enables >1 MHz switching in DC-DC controllers without excessive heat buildup.
ES6 package thermal performance	150 mW total power dissipation on FR4 board - sufficient for 720 mA continuous per channel with <15°C/W junction-to-board thermal resistance.

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Dual-MOSFET reverse-polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side switch controlling battery discharge path; second channel used for charger enable/disable isolation. Use Value: R_DS(ON) ≤ 0.44 Ω at −2.5 V ensures <110 mW loss at 500 mA, extending runtime while supporting 1.8-V MCU control signals.	Use Scenario: Per-port 5 V power switching in multi-port USB hubs with individual fault reporting. IC Role / Device Role / Timing Role: Independent high-side load switch per USB port, driven by dedicated GPIO lines. Use Value: Matched V_th and R_DS(ON) across channels ensure consistent inrush limiting and hot-swap timing across all ports.
Smartphone Backlight Dimming	Wearable Sensor Power Gating
Use Scenario: PWM-controlled LED current regulation using synchronous rectification in boost converter output stage. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; second channel unused or paralleled for higher current. Use Value: Q_gd = 0.54 nC minimizes Miller-induced shoot-through risk during 500 kHz–1 MHz dimming frequencies.	Use Scenario: Ultra-low-quiescent-power on/off control of MEMS accelerometers and environmental sensors in hearables. IC Role / Device Role / Timing Role: Always-on load switch enabling sub-1 μA system standby current via gate-controlled cutoff. Use Value: I_DSS ≤ −10 μA at −20 V ensures leakage-induced battery drain remains below 20 μA in deep sleep mode.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Dual-MOSFET reverse-polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side switch controlling battery discharge path; second channel used for charger enable/disable isolation.

Use Value: R_DS(ON) ≤ 0.44 Ω at −2.5 V ensures <110 mW loss at 500 mA, extending runtime while supporting 1.8-V MCU control signals.

Use Scenario: Per-port 5 V power switching in multi-port USB hubs with individual fault reporting.

IC Role / Device Role / Timing Role: Independent high-side load switch per USB port, driven by dedicated GPIO lines.

Use Value: Matched V_th and R_DS(ON) across channels ensure consistent inrush limiting and hot-swap timing across all ports.

Smartphone Backlight Dimming

Wearable Sensor Power Gating

Use Scenario: PWM-controlled LED current regulation using synchronous rectification in boost converter output stage.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; second channel unused or paralleled for higher current.

Use Value: Q_gd = 0.54 nC minimizes Miller-induced shoot-through risk during 500 kHz–1 MHz dimming frequencies.

Use Scenario: Ultra-low-quiescent-power on/off control of MEMS accelerometers and environmental sensors in hearables.

IC Role / Device Role / Timing Role: Always-on load switch enabling sub-1 μA system standby current via gate-controlled cutoff.

Use Value: I_DSS ≤ −10 μA at −20 V ensures leakage-induced battery drain remains below 20 μA in deep sleep mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPS22967DCKR	Single-channel, integrated charge pump for 1.2-V logic compatibility; higher R_DS(ON) (0.55 Ω @ −1.8 V); includes output discharge and fault flag.	Requires external circuitry for dual independent switching; better suited for single-load systems needing diagnostics.	Select when diagnostic features outweigh need for dual independent channels.
DMN6040SSD-13	Dual P-channel in SO-8; higher R_DS(ON) (0.55 Ω @ −4.5 V); larger footprint (4.9 × 6.0 mm); rated for −60 V V_DSS.	Not suitable for ultra-compact wearables; preferred where higher voltage margin or manual reworkability is required.	Select when board space allows SO-8 and −60 V rating is mandatory for system-level surge immunity.

Compared with TPS22967DCKR and DMN6040SSD-13, the SSM6P41FE(TE85L,F) uniquely balances ultra-small ES6 footprint, true dual independent gate control, and sub-0.3 Ω R_DS(ON) at −4.5 V - making it optimal for space- and efficiency-critical dual-load switching in portable electronics.

Availability

SSM6P41FE(TE85L,F) is available at Aetrix Electronics and suitable for battery-powered load switching, USB power management, smartphone backlight control, and wearable sensor power gating requiring stable component supply and long-term production continuity.

Supply support for SSM6P41FE(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and reliability for consumer, industrial, and automotive markets.

The SSM6P41FE(TE85L,F) belongs to Toshiba's U-MOS-V P-channel MOSFET product line, engineered specifically for low-voltage, high-density power management in portable electronics where 1.5-V logic compatibility and minimal board area are critical design constraints.

FAQ

What is the maximum continuous drain current rating per channel for the SSM6P41FE(TE85L,F)?

The SSM6P41FE(TE85L,F) supports −720 mA DC drain current per channel at T_a = 25 °C when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm with six 0.135 mm² copper pads). Derating applies above 25 °C ambient, with full derating to zero at 150 °C channel temperature.

Does the SSM6P41FE(TE85L,F) support true independent operation of both P-channel MOSFETs?

Yes, the SSM6P41FE(TE85L,F) provides two fully independent P-channel MOSFETs with separate source, gate, and drain terminals. Pin 1 (Source₁) and Pin 4 (Source₂) are internally tied to the same substrate but not electrically shorted; each gate (Pins 2 and 5) controls its respective channel without crosstalk, enabling asynchronous switching.

What is the guaranteed R_DS(ON) of the SSM6P41FE(TE85L,F) at V_GS = −1.5 V?

The SSM6P41FE(TE85L,F) guarantees R_DS(ON) ≤ 1.04 Ω (max) per channel at V_GS = −1.5 V and I_D = −50 mA, as specified in the Electrical Characteristics table. This ensures functional operation with 1.5-V logic-level gate drivers commonly found in modern microcontrollers and PMICs.

Can the SSM6P41FE(TE85L,F) be used in synchronous rectification applications?

Yes, the SSM6P41FE(TE85L,F) is suitable for synchronous rectification in DC-DC converters due to its low R_DS(ON) (0.30 Ω max at −4.5 V), fast t_off (38 ns), and low Q_gd (0.54 nC). Its dual-channel structure allows one channel to serve as rectifier while the other remains unused or paralleled for higher current handling.

Is the SSM6P41FE(TE85L,F) RoHS compliant and lead-free?

Yes, the SSM6P41FE(TE85L,F) is RoHS compliant and lead-free, as confirmed by Toshiba's official product documentation and environmental compliance statements. The "(TE85L,F)" suffix denotes tape-and-reel packaging compatible with automated SMT assembly and meets JEDEC moisture sensitivity level 1 requirements.

SSM6P41FE(TE85L,F) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 720mA

Rds On (Max) @ Id, Vgs:: 300mOhm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 1.76nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 110pF @ 10V

Power - Max:: 150mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: ES6

SSM6P41FE(TE85L,F) FAQ

1.How can I place an order for SSM6P41FE(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM6P41FE(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM6P41FE(TE85L,F) reliable?

The price and inventory of SSM6P41FE(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6P41FE(TE85L,F) is usually 5 days.

3.What payment methods are accepted for SSM6P41FE(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6P41FE(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM6P41FE(TE85L,F)?

SSM6P41FE(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM6P41FE(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM6P41FE(TE85L,F)?

For technical support, including SSM6P41FE(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6P41FE(TE85L,F) requirements.

6.How does Aetrix verify that SSM6P41FE(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All SSM6P41FE(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6P41FE(TE85L,F) meets industry standards.

7.What is the process for return or replacement of SSM6P41FE(TE85L,F)?

All SSM6P41FE(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with SSM6P41FE(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM6P41FE(TE85L,F) part is unused and in its original packaging.

Return procedure for SSM6P41FE(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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