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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Toshiba Semiconductor and Storage SSM6P54TU,LF

Name: SSM6P54TU,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM6P54TU,LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SSM6P54TU,LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FET, MOSFET Arrays

Package:: 6-SMD, Flat Leads

Datasheet:: SSM6P54TU,LF.pdf

Description:: MOSFET 2P-CH 20V 1.2A UF6

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Product details

Overview

SSM6P54TU,LF from Toshiba is a dual-channel P-channel MOSFET in a compact UF6 package, designed for high-density power management and high-speed switching applications. It features low on-resistance (228 mΩ max at V_GS = −2.5 V), 1.5 V logic-level drive capability, and −20 V drain-source breakdown voltage. It operates reliably in battery-powered load switches and DC-DC converter synchronous rectification stages.

For engineers reviewing the SSM6P54TU,LF datasheet, SSM6P54TU,LF pinout, SSM6P54TU,LF application, or SSM6P54TU,LF equivalent, this page delivers verified electrical parameters, validated dual-MOSFET pin configuration, real-world switching timing data (t_on = 19 ns, t_off = 18 ns), and confirmed alternatives for space-constrained, low-voltage power control designs.

Technical Context

The SSM6P54TU,LF integrates two independent P-channel enhancement-mode MOSFETs in a single 6-pin surface-mount package with shared source terminals configured as a common-source dual device. Its gate threshold voltage range (−0.3 V to −1.0 V) enables reliable turn-on from 1.5 V–2.5 V logic rails, while its low input capacitance (C_iss = 331 pF) supports fast switching with minimal gate drive energy.

Thermal performance is specified for mounting on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, 645 mm² copper pad), delivering 500 mW power dissipation and 150 °C channel temperature rating. The device exhibits monotonic R_DS(on) degradation with rising ambient temperature and gate voltage reduction - critical for thermal-aware load switch design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	−20 V - Supports 12 V and 15 V rail switching with 20 % margin against transients
R_DS(on) @ V_GS = −2.5 V	228 mΩ (max) - Enables ≤150 mW conduction loss at 0.6 A load current
Q_g	7.7 nC - Determines gate drive strength requirement for <20 ns switching transitions
t_on/t_off	19 ns / 18 ns - Confirmed under V_DD = −10 V, I_D = −0.6 A, R_G = 4.7 Ω test conditions
C_iss	331 pF - Limits high-frequency gate oscillation risk and eases EMI filtering design
V_th	−0.3 V to −1.0 V - Ensures robust turn-on margin with 1.5 V–1.8 V microcontroller GPIOs

Pinout & Package

SSM6P54TU,LF uses the UF6 package (JEITA: 2-2T1B), a 6-pin, 2.1 mm × 2.0 mm × 0.7 mm ultra-thin leadless package optimized for high-density PCB layouts. Pin assignment is validated per Toshiba's top-view marking diagram and equivalent circuit schematic.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source 1)	Source of Q1	Common-source node for first MOSFET; electrically tied to Pin 4 in internal layout
2 (Gate 1)	Gate of Q1	Independent control terminal for first channel; requires no level-shifting for 1.5 V logic
3 (Drain 2)	Drain of Q2	Output node for second MOSFET; isolated from Q1 drain (Pin 6)
4 (Source 2)	Source of Q2	Common-source node for second MOSFET; internally bonded to Pin 1
5 (Gate 2)	Gate of Q2	Independent control terminal for second channel; fully decoupled from Gate 1
6 (Drain 1)	Drain of Q1	Output node for first MOSFET; isolated from Q2 drain (Pin 3)

Key Features

Feature	Design Value
1.5 V logic-compatible gate drive	Enables direct interface with low-voltage MCUs and PMICs without external level shifters
Dual independent P-channel topology	Supports two separate load-switch or reverse-polarity protection paths in one footprint
Ultra-low R_DS(on) at low V_GS	350 mΩ max at −1.8 V allows efficient operation in 1.8 V I/O domain systems
Compact UF6 package (2.1 × 2.0 mm)	Reduces board area by >40 % vs. discrete SO-6 solutions while maintaining thermal performance
Low total gate charge (7.7 nC)	Minimizes gate driver power consumption and simplifies RC gate network design

Applications

Battery Load Switching	USB Port Power Control
Use Scenario: Isolating backup battery from main system during sleep mode to prevent leakage current. IC Role / Device Role / Timing Role: Dual P-channel MOSFET used as back-to-back load switch with independent enable control per rail. Use Value: Achieves <1 μA off-state current using matched V_th and low I_DSS (≤−10 μA), extending battery life in portable medical devices.	Use Scenario: Enabling/disabling 5 V USB VBUS power to peripheral ports based on enumeration status. IC Role / Device Role / Timing Role: Single-channel P-MOSFET (Q1 or Q2) acting as hot-swap switch with fast turn-off (<20 ns) to limit inrush. Use Value: Low R_DS(on) (228 mΩ) limits voltage drop to <137 mV at 600 mA, preserving USB 2.0 voltage compliance.
DC-DC Converter Synchronous Rectifier	Reverse Polarity Protection
Use Scenario: Replacing Schottky diodes in buck converter output stage to improve efficiency at light loads. IC Role / Device Role / Timing Role: Second channel (Q2) used as synchronous rectifier driven by controller's complementary output. Use Value: R_DS(on) of 350 mΩ at −1.8 V matches typical gate drive from PWM controllers, cutting conduction loss by 65 % vs. 0.35 V diode drop.	Use Scenario: Protecting 3.3 V or 5 V subsystems from accidental reverse battery connection. IC Role / Device Role / Timing Role: Both channels wired in series (source-to-drain) to block reverse current path unidirectionally. Use Value: Dual-device integration eliminates need for two discrete MOSFETs and associated gate resistors, reducing BOM count and layout complexity.

Battery Load Switching

USB Port Power Control

Use Scenario: Isolating backup battery from main system during sleep mode to prevent leakage current.

IC Role / Device Role / Timing Role: Dual P-channel MOSFET used as back-to-back load switch with independent enable control per rail.

Use Value: Achieves <1 μA off-state current using matched V_th and low I_DSS (≤−10 μA), extending battery life in portable medical devices.

Use Scenario: Enabling/disabling 5 V USB VBUS power to peripheral ports based on enumeration status.

IC Role / Device Role / Timing Role: Single-channel P-MOSFET (Q1 or Q2) acting as hot-swap switch with fast turn-off (<20 ns) to limit inrush.

Use Value: Low R_DS(on) (228 mΩ) limits voltage drop to <137 mV at 600 mA, preserving USB 2.0 voltage compliance.

DC-DC Converter Synchronous Rectifier

Reverse Polarity Protection

Use Scenario: Replacing Schottky diodes in buck converter output stage to improve efficiency at light loads.

IC Role / Device Role / Timing Role: Second channel (Q2) used as synchronous rectifier driven by controller's complementary output.

Use Value: R_DS(on) of 350 mΩ at −1.8 V matches typical gate drive from PWM controllers, cutting conduction loss by 65 % vs. 0.35 V diode drop.

Use Scenario: Protecting 3.3 V or 5 V subsystems from accidental reverse battery connection.

IC Role / Device Role / Timing Role: Both channels wired in series (source-to-drain) to block reverse current path unidirectionally.

Use Value: Dual-device integration eliminates need for two discrete MOSFETs and associated gate resistors, reducing BOM count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011LSD-13	Single N-channel + integrated driver; requires external high-side control logic	Designed for active OR-ing, not passive load switching	Prefer SSM6P54TU,LF when gate drive simplicity and true dual independent control are required
TPS22922DCKR	Integrated load switch IC with enable, fault reporting, and soft-start; not discrete MOSFET	Includes protection features but lacks dual independent switching capability	Choose SSM6P54TU,LF where discrete flexibility, low quiescent current, and custom timing control are prioritized

Compared with DMN2011LSD-13 and TPS22922DCKR, the SSM6P54TU,LF provides true dual independent P-channel switching in a minimal footprint without added control overhead - making it optimal for space-constrained, low-voltage, high-efficiency load management where discrete gate control and minimal BOM count are essential.

Availability

SSM6P54TU,LF is available at Aetrix Electronics and suitable for battery-powered IoT sensors, USB-C accessory power management, and industrial handheld equipment requiring stable component supply and long-term obsolescence support.

Supply support for SSM6P54TU,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in silicon MOSFET reliability and miniaturization.

The SSM6P54TU,LF belongs to Toshiba's SSM-series ultra-compact dual MOSFET family, engineered specifically for high-density portable electronics requiring low-voltage logic compatibility and thermally efficient power switching.

FAQ

What is the maximum continuous drain current rating for the SSM6P54TU,LF?

The SSM6P54TU,LF has a DC drain current rating of −1.2 A per channel at T_a = 25 °C when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm, 645 mm² copper pad). This rating decreases with rising ambient temperature and must be derated per the PD–Ta curve in the datasheet. Pulse current is rated at −2.4 A, limited by thermal constraints and safe operating area boundaries.

Does the SSM6P54TU,LF support 1.5 V gate drive across its full operating temperature range?

Yes - the SSM6P54TU,LF is characterized for 1.5 V logic-level operation, with guaranteed R_DS(on) of 555 mΩ (max) at V_GS = −1.5 V and I_D = −0.1 A. Its gate threshold voltage remains within −0.3 V to −1.0 V across −25 °C to 85 °C, ensuring reliable turn-on even at low V_GS over the full industrial temperature range.

How are the two MOSFETs internally connected in the SSM6P54TU,LF?

The SSM6P54TU,LF contains two fully independent P-channel MOSFETs sharing no internal connection except for mechanical bonding of Source 1 (Pin 1) and Source 2 (Pin 4) to a common source pad. Drain 1 (Pin 6) and Drain 2 (Pin 3) are isolated, as are Gate 1 (Pin 2) and Gate 2 (Pin 5), enabling true dual-channel operation with separate control and output paths.

What is the thermal resistance (R_thJA) of the SSM6P54TU,LF under standard mounting conditions?

Under JEDEC-standard FR4 board conditions (25.4 mm × 25.4 mm × 1.6 mm, 645 mm² copper pad), the SSM6P54TU,LF achieves a junction-to-ambient thermal resistance of approximately 250 °C/W, derived from its 500 mW power dissipation rating and 125 °C maximum allowable temperature rise above 25 °C ambient. Transient thermal impedance data confirms suitability for pulsed loads.

Is the SSM6P54TU,LF RoHS compliant and halogen-free?

Yes - the SSM6P54TU,LF meets EU RoHS Directive 2011/65/EU requirements and is manufactured as a halogen-free device per Toshiba's environmental specifications. Lead-free solderability and MSL Level 1 handling are confirmed per the official Toshiba product change notice and material declaration documents.

SSM6P54TU,LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 6-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate, 1.5V Drive

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta)

Rds On (Max) @ Id, Vgs:: 228mOhm @ 600mA, 2.5V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 7.7nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds:: 331pF @ 10V

Power - Max:: 500mW (Ta)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: UF6

SSM6P54TU,LF FAQ

1.How can I place an order for SSM6P54TU,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM6P54TU,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM6P54TU,LF reliable?

The price and inventory of SSM6P54TU,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM6P54TU,LF is usually 5 days.

3.What payment methods are accepted for SSM6P54TU,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM6P54TU,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM6P54TU,LF?

SSM6P54TU,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM6P54TU,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM6P54TU,LF?

For technical support, including SSM6P54TU,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM6P54TU,LF requirements.

6.How does Aetrix verify that SSM6P54TU,LF is sourced from the original manufacturer or authorized distributors?

All SSM6P54TU,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM6P54TU,LF meets industry standards.

7.What is the process for return or replacement of SSM6P54TU,LF?

All SSM6P54TU,LF units undergo pre-shipment inspection (PSI). If there is an issue with SSM6P54TU,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM6P54TU,LF part is unused and in its original packaging.

Return procedure for SSM6P54TU,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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