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STMicroelectronics STB100N10F7
- Part No.:
- STB100N10F7
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB100N10F7.pdf
- Description:
- MOSFET N-CH 100V 80A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,749
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Product details
Overview
STB100N10F7 from STMicroelectronics is an N-channel 100 V, 8.0 mΩ (max), 80 A Power MOSFET in D2PAK (TO-263) package, utilizing STripFET F7 trench-gate technology for ultra-low RDS(on), reduced gate charge (61 nC), and high avalanche ruggedness (400 mJ). It serves as a primary high-current switching device in DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the STB100N10F7 datasheet, STB100N10F7 pinout, STB100N10F7 application, or STB100N10F7 equivalent, key selection criteria include its 100 V VDS, 8.0 mΩ RDS(on) at 10 V VGS, 61 nC total gate charge, 1 Ω/W junction-to-case thermal resistance, and D2PAK thermal performance enabling high-power continuous operation.
Technical Context
This MOSFET employs STripFET F7's enhanced trench gate structure to simultaneously minimize RDS(on) (6.8 mΩ typ.) and internal capacitances-Ciss = 4369 pF, Crss = 36 pF-yielding low EMI sensitivity and fast switching (td(on) = 27 ns, tf = 15 ns).
Its robust safe operating area supports 80 A continuous drain current at TC = 25 °C and 70 A at TC = 100 °C, with unclamped inductive switching capability up to 400 mJ single-pulse avalanche energy at TJ = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 48 V–72 V bus applications with 30 % safety margin |
| RDS(on) max | 8.0 mΩ at VGS = 10 V, ID = 40 A - Enables <1 W conduction loss at 40 A, critical for high-efficiency power stages |
| ID cont | 80 A at TC = 25 °C - Supports high-current loads such as BLDC motor phases or server VRMs |
| Qg | 61 nC - Low gate drive power requirement; compatible with standard 1-A peak gate drivers |
| RthJC | 1.0 °C/W - Enables >100 W dissipation with modest heatsinking (ΔT = 100 °C) |
| EAS | 400 mJ - Withstands repetitive inductive turn-off stress without snubber in 200–500 kHz SMPS |
| Crss/Ciss | 36/4369 pF - Low reverse transfer ratio improves noise immunity and dV/dt ruggedness |
Pinout & Package
D2PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-terminal configuration optimized for high-current PCB thermal management and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Drain connection / thermal path | Electrically tied to drain; provides primary heat conduction to PCB copper pour or heatsink |
| Pin 1 | Gate | Control terminal; requires ≤±20 V drive; low 26 nC Qgs enables fast turn-on |
| Pin 2 | Source | Reference node for gate drive and current sensing; low-inductance layout essential for switching stability |
| Pin 3 | Drain (secondary) | Redundant drain connection on leadframe; used in some layouts for current sharing or mechanical reinforcement |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 6.8 mΩ typ. at 10 V - Reduces conduction losses by >35 % vs. prior-generation 100 V MOSFETs |
| Low Crss/Ciss ratio | 36/4369 pF = 0.0082 - Minimizes Miller-induced shoot-through risk in half-bridge topologies |
| High avalanche ruggedness | 400 mJ single-pulse EAS - Eliminates need for external clamping in flyback or buck-boost converters |
| Enhanced thermal resistance | RthJC = 1.0 °C/W - Allows 150 W power handling with 150 °C ΔT, supporting compact thermal design |
| STripFET F7 process | Optimized trench gate geometry - Delivers simultaneous improvement in RDS(on), Qg, and Coss over F6 |
Applications
| Motor Drive Inverter | Server VRM High-Side Switch |
|---|---|
Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 48 V bus, 20–50 kHz PWM. IC Role / Device Role / Timing Role: High-side N-channel switch in each leg; handles 60 A peak phase current with <100 ns dead-time tolerance. Use Value: 8.0 mΩ RDS(on) limits conduction loss to 28.8 W at 60 A, while 15 ns fall time ensures minimal overlap loss during commutation. |
Use Scenario: High-current synchronous buck converter delivering 12 V @ 100 A to CPU cores in enterprise servers. IC Role / Device Role / Timing Role: Primary high-side switching element; operates at 300–600 kHz with 10 V gate drive. Use Value: 61 nC Qg enables efficient drive with UCC27531 gate driver; 1.0 °C/W RthJC sustains 120 W dissipation with 120 °C case rise. |
| Industrial DC-DC Converter | UPS Output Stage |
Use Scenario: 48 V to 12 V isolated DC-DC module for factory automation PLCs requiring 95 % efficiency at full load. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology; conducts 80 A continuous. Use Value: 1.2 V VSD forward drop at 80 A yields only 96 W conduction loss vs. 200+ W for Schottky alternatives. |
Use Scenario: Online UPS output inverter stage converting 380 V DC bus to 230 V AC, 5 kVA capacity. IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz hard-switched H-bridge; leverages avalanche rating for fault tolerance. Use Value: 400 mJ EAS withstands short-circuit events during grid fault recovery without desaturation protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STD100N10F7 | DPAK package, RthJC = 1.25 °C/W, same RDS(on) and Qg | Lower power density (max 120 W vs. 150 W); suited for space-constrained but thermally relaxed designs | Select when board area is limited and thermal interface to heatsink is impractical |
| STP100N10F7 | TO-220 package, RthJC = 1.0 °C/W, identical electrical specs, higher RthJA | Requires mechanical heatsink mounting; better for prototyping or low-volume industrial controls | Select when through-hole assembly, field serviceability, or direct heatsink clamping is required |
Compared with STD100N10F7 and STP100N10F7, STB100N10F7 delivers superior thermal performance in surface-mount form factor-enabling higher power density in automated production-while maintaining identical switching and conduction characteristics across the F7 family.
Availability
STB100N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability deployments.
Supply support for STB100N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
STB100N10F7 belongs to the STripFET F7 Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in data center power supplies, industrial automation, and renewable energy systems.
FAQ
What is the maximum continuous drain current for STB100N10F7 at 100 °C case temperature?
The maximum continuous drain current is 70 A at TC = 100 °C, as specified in Table 1 of DS9291 Rev 6. This rating is limited by thermal constraints-not silicon capability-and assumes proper PCB copper area (≥10 cm² 2 oz Cu) and airflow.
Does STB100N10F7 have integrated gate protection?
No, STB100N10F7 does not include integrated gate Zener protection. Its absolute maximum VGS rating is ±20 V; external 12–15 V gate clamp diodes are recommended in noisy environments or when using bootstrap gate drivers with high dV/dt coupling.
Can STB100N10F7 replace STB80NF10 in existing designs?
Yes, STB100N10F7 is a direct upgrade: it offers 20 % lower RDS(on) (8.0 mΩ vs. 10.5 mΩ), 15 % lower Qg (61 nC vs. 72 nC), and identical D2PAK footprint and pinout-enabling drop-in efficiency improvement without layout changes.
Is the D2PAK tab electrically isolated from the PCB mounting plane?
No-the D2PAK tab is internally connected to the drain and must be electrically isolated from the heatsink or PCB ground plane using insulating thermal pads or mica washers. The insulation withstand voltage is rated at 2.5 kV RMS per Table 1.
STB100N10F7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VII
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 61 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4369 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB100N10F7 FAQ
1.How can I place an order for STB100N10F7 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB100N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB100N10F7 reliable?
The price and inventory of STB100N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB100N10F7 is usually 5 days.
3.What payment methods are accepted for STB100N10F7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB100N10F7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB100N10F7?
STB100N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB100N10F7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB100N10F7?
For technical support, including STB100N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB100N10F7 requirements.
6.How does Aetrix verify that STB100N10F7 is sourced from the original manufacturer or authorized distributors?
All STB100N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB100N10F7 meets industry standards.
7.What is the process for return or replacement of STB100N10F7?
All STB100N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STB100N10F7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB100N10F7 part is unused and in its original packaging.
Return procedure for STB100N10F7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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