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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB100N6F7

Name: STB100N6F7
Brand: STMicroelectronics
SKU: STB100N6F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB100N6F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB100N6F7.pdf

Description:: MOSFET N-CH 60V 100A D2PAK

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Product details

Overview

STB100N6F7 from STMicroelectronics is an N-channel 60 V, 4.7 mΩ typ. R_DS(on), 100 A continuous drain current Power MOSFET in D²PAK (TO-263) package, utilizing STripFET™ F7 trench-gate technology for high-efficiency switching in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the STB100N6F7 datasheet, STB100N6F7 pinout, STB100N6F7 application, or STB100N6F7 equivalent, key selection criteria include its 1.2 °C/W junction-to-case thermal resistance, low 86 pF Crss/Ciss ratio for EMI immunity, 30 nC total gate charge, and 200 mJ single-pulse avalanche energy rating.

Technical Context

This device implements an enhanced trench-gate STripFET™ F7 structure that simultaneously minimizes R_DS(on) (4.7 mΩ typ. at V_GS = 10 V) and reduces internal capacitances - C_iss = 1980 pF, C_oss = 970 pF, Crss = 86 pF - enabling fast switching with low switching losses.

Its robust safe operating area supports pulsed drain currents up to 400 A, while the 200 mJ unclamped inductive avalanche energy (T_j = 25 °C, I_D = 20 A, V_DD = 30 V) and 175 °C max junction temperature ensure ruggedness in transient-heavy industrial loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V nominal rails.
R_DS(on) typ.	4.7 mΩ at V_GS = 10 V, T_C = 25 °C - Enables <1 W conduction loss at 100 A, critical for high-current power stages.
I_D cont.	100 A at T_C = 25 °C - Supports high-power switching without external parallel devices in compact layouts.
Q_g	30 nC - Low gate drive energy requirement, reducing driver IC stress and enabling higher PWM frequencies.
E_AS	200 mJ - Confirmed single-pulse avalanche capability allows reliable operation under inductive turn-off transients.
R_thj-case	1.2 °C/W - Enables direct heatsink mounting with predictable thermal performance in thermally constrained enclosures.
C_rss/C_iss ratio	~4.3% - Low reverse transfer capacitance improves EMI behavior and reduces Miller-induced shoot-through risk.

Pinout & Package

The STB100N6F7 is housed in a surface-mount D²PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard configuration: Drain (tab), Source (pins 1 & 2), Gate (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output path / Heat sink interface	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly to heatsink.
Source (Pin 1 & Pin 2)	Reference node for gate drive and current sensing	Parallel pins reduce source inductance and improve stability during fast switching; used for Kelvin-source sensing in precision designs.
Gate (Pin 3)	Control input for channel modulation	High-impedance terminal requiring low-inductance layout; driven by dedicated gate driver to achieve 21.6 ns turn-on delay and 15 ns fall time.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.7 mΩ typ. at 10 V gate drive enables >98% efficiency in 12–48 V synchronous buck converters at 50–100 A.
Low Crss/Ciss ratio	86 pF / 1980 pF = 4.3% - Reduces Miller plateau duration and improves noise immunity in noisy industrial environments.
High avalanche ruggedness	200 mJ single-pulse rating - Eliminates need for external snubbers in flyback or H-bridge inductive switching applications.
Enhanced thermal performance	1.2 °C/W R_thj-case - Allows 125 W dissipation with ≤150 °C case temperature using standard aluminum heatsinks.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current 3-phase BLDC inverter for HVAC compressors operating at 48 V bus and 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side/low-side N-channel switch in 6-pack configuration; handles 100 A peak phase current with minimal conduction loss.

Use Value: 4.7 mΩ R_DS(on) limits I²R loss to 47 W per device at 100 A, enabling air-cooled design without forced convection.

Use Scenario: 1 kW isolated forward converter in programmable power supply with 36–60 V input range.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch; operates at 100 kHz with 30 nC Q_g enabling efficient gate drive.

Use Value: Low Crss suppresses EMI during hard-switching transitions, reducing filter component count and board space by ~30%.

Automotive On-Board Charger (OBC) Input Stage

Server PSU OR-ing FET

Use Scenario: Bidirectional AC/DC PFC + DC/DC stage in 6.6 kW EV on-board charger with 400 V DC link.

IC Role / Device Role / Timing Role: Boost switch in interleaved PFC front-end; rated for 60 V blocking but used in cascode configuration with SiC diodes.

Use Value: 175 °C T_jmax and 200 mJ E_AS support reliable operation during grid voltage surges and soft-start overcurrent events.

Use Scenario: Hot-swap OR-ing FET in redundant 12 V server power distribution unit handling up to 80 A per rail.

IC Role / Device Role / Timing Role: Low-loss pass element replacing Schottky diodes; controlled via ideal diode controller with fast turn-on/turn-off.

Use Value: 1.2 °C/W R_thj-case ensures stable 125 W dissipation at full load, eliminating need for auxiliary cooling in dense 1U chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH100N60X3	R_DS(on) = 6.2 mΩ (typ.), V_DS = 600 V, TO-247 package, R_thj-case = 0.45 °C/W	Higher voltage rating suits 400 V+ DC links; larger package requires more PCB area and different thermal interface.	Select when 600 V blocking is required and thermal budget permits TO-247 mounting.
IRFB4115PBF	R_DS(on) = 5.5 mΩ (typ.), V_DS = 150 V, TO-220 package, R_thj-case = 1.3 °C/W	Lower voltage grade; higher R_DS(on) increases conduction loss by ~17% at 100 A; through-hole assembly only.	Choose for legacy through-hole designs where 150 V rating suffices and D²PAK reflow is not available.

Compared with IXFH100N60X3 and IRFB4115PBF, the STB100N6F7 offers optimal balance of ultra-low on-resistance, surface-mount D²PAK packaging, and proven avalanche ruggedness for 48–60 V industrial switching - delivering lower system-level thermal resistance and smaller footprint than alternatives.

Availability

STB100N6F7 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STB100N6F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ F7 product line targets high-efficiency power conversion, emphasizing low R_DS(on), fast switching, and ruggedness in surface-mount packages for next-generation power supplies and motor control systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB100N6F7 supports 75 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the D²PAK package and must be validated against actual board layout, copper area, and heatsink interface resistance.

Does this MOSFET require a gate resistor for safe operation?

Yes - a gate resistor (typically 4.7 Ω, as used in the datasheet's switching time test circuit) is required to dampen ringing, limit peak gate current, and control dV/dt during turn-on/off. Omitting it risks oscillation, shoot-through, or gate oxide damage due to parasitic inductance.

Can STB100N6F7 replace older STB100NF06L devices in existing designs?

No - the STB100N6F7 has different gate threshold voltage (2–4 V vs. 2–4.5 V), lower R_DS(on), and revised dynamic parameters. Layout and gate drive timing must be re-validated; the F7 generation also features improved Crss/Ciss ratio and avalanche performance not guaranteed in the L-series.

Is the D²PAK drain tab electrically isolated from the PCB ground plane?

No - the drain tab is internally connected to the MOSFET's drain terminal and must be soldered to a dedicated copper pour tied to the high-side DC node. It is not insulated; isolation requires a thermal pad with dielectric layer or separate heatsink mounting with insulating hardware.

STB100N6F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1980 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB100N6F7 FAQ

1.How can I place an order for STB100N6F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB100N6F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB100N6F7 reliable?

The price and inventory of STB100N6F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB100N6F7 is usually 5 days.

3.What payment methods are accepted for STB100N6F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB100N6F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB100N6F7?

STB100N6F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB100N6F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB100N6F7?

For technical support, including STB100N6F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB100N6F7 requirements.

6.How does Aetrix verify that STB100N6F7 is sourced from the original manufacturer or authorized distributors?

All STB100N6F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB100N6F7 meets industry standards.

7.What is the process for return or replacement of STB100N6F7?

All STB100N6F7 units undergo pre-shipment inspection (PSI). If there is an issue with STB100N6F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB100N6F7 part is unused and in its original packaging.

Return procedure for STB100N6F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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