STMicroelectronics STB100NF04T4

Overview

STB100NF04T4 from STMicroelectronics is an automotive-grade N-channel Power MOSFET with 40 V V_DS, 4.3 mΩ typ. R_DS(on) at V_GS = 10 V, 120 A continuous drain current, and 300 W total power dissipation in D²PAK (TO-263) package. It serves as a primary high-current switching device in isolated DC-DC converters for telecom and computing systems requiring low gate charge and robust avalanche capability.

For engineers reviewing the STB100NF04T4 datasheet, STB100NF04T4 pinout, STB100NF04T4 application, or STB100NF04T4 equivalent, key selection criteria include its AEC-Q101 qualification, 1.2 J single-pulse avalanche energy, 110–150 nC total gate charge, 6 V/ns dv/dt rating, and thermal resistance of 0.5 °C/W junction-to-case.

Technical Context

This STripFET™ II MOSFET employs a planar vertical structure optimized to minimize input capacitance (C_iss = 5100 pF) and gate charge-critical for high-frequency, high-efficiency switching in hard-switched and resonant topologies. Its low R_DS(on) and high ID capability support high-current, low-loss operation under continuous conduction mode.

The device integrates a robust body diode with 120 A continuous source-drain current, 1.3 V forward voltage at 120 A, and 75 ns reverse recovery time-enabling synchronous rectification and freewheeling in buck, half-bridge, and LLC converter stages without external diode supplementation.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, thermally enhanced outline with exposed drain tab (pin 2) for PCB heat transfer. Tab is electrically connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP100NF04 and IRF1404ZPBF, STB100NF04T4 uniquely combines AEC-Q101 compliance, tape-and-reel SMT readiness, and verified 1.2 J avalanche energy-making it the only choice for production automotive DC-DC modules requiring zero-defect reliability and automated manufacturing.

Availability

STB100NF04T4 is available at Aetrix Electronics and suitable for automotive DC-DC converters, telecom intermediate bus supplies, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB100NF04T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and telecom power systems where low R_DS(on), low gate charge, and ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for STB100NF04T4?

The junction temperature must not exceed 175 °C under any operating condition. At case temperature of 100 °C, the device sustains full 120 A current due to its flat ID vs. TC curve. Derating begins above 100 °C case temperature per Figure 3 in the datasheet, with 0.8 A/°C reduction beyond that point.

Does STB100NF04T4 require a gate resistor for typical 200 kHz switching?

Yes-a 4.7 Ω gate resistor is recommended per Figure 20 test circuit to balance switching speed (35 ns t_d(on), 50 ns t_f) and EMI suppression. Lower values increase dv/dt stress and ringing; higher values raise switching losses disproportionately due to its 110–150 nC Q_g.

Can STB100NF04T4 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (see Figure 11) ensures inherent current sharing. Layout must match gate and source loop inductances across paralleled units; use Kelvin source connections and individual gate resistors to avoid oscillation and uneven dynamic current distribution.

Is the D²PAK footprint compatible with standard IPC-7351B land patterns?

Yes-the recommended footprint in Figure 27 complies with IPC-7351B Level B for TO-263AB (D²PAK). Key dimensions include 9.15 mm × 10.2 mm body outline, 2.54 mm pin pitch, and 7.6 mm × 8.7 mm thermal pad (with 0.3 mm solder mask expansion), supporting reliable reflow and thermal performance.