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STMicroelectronics STB100NH02LT4

Part No.:
STB100NH02LT4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTB100NH02LT4.pdf
Description:
MOSFET N-CH 24V 60A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,455

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Product details

Overview

STB100NH02LT4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 24 V VDSS, 60 A continuous drain current at TC = 25°C, and 5.2 mΩ RDS(on) at VGS = 10 V. It employs STripFET™ III technology for low conduction and switching losses, targeting high-efficiency DC-DC converters in industrial power supplies.

For engineers reviewing the STB100NH02LT4 datasheet, STB100NH02LT4 pinout, STB100NH02LT4 application, or STB100NH02LT4 equivalent, key selection criteria include its 1.5 °C/W junction-to-case thermal resistance, 47.5 nC total gate charge, avalanche energy rating of 600 mJ, and compatibility with 5 V logic-level drive due to 1.0–1.8 V gate threshold voltage.

Technical Context

This MOSFET operates as a synchronous rectifier or primary-side switch in non-isolated buck and multiphase VRM topologies. Its low RDS(on) × Qg figure-of-merit (≈240 mΩ·nC) minimizes combined conduction and switching loss trade-offs at high-frequency operation up to 1 MHz.

The device integrates a fast-recovery body diode with trr = 35 ns and Qrr = 35 nC at Tj = 150°C, enabling efficient hard-switched inductive load control without external freewheeling diodes in compact converter designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS24 V - Maximum blocking voltage in off-state; suitable for 24 V bus systems with margin against transients.
RDS(on) @ VGS=10 V5.2 mΩ - Enables ≤1.8 W conduction loss at 60 A, critical for thermally constrained PCB layouts.
Qg47.5 nC - Determines gate driver power requirement and switching speed; compatible with standard 1-A peak drivers.
EAS600 mJ - Supports unclamped inductive switching events without failure, enhancing system robustness.
Rthj-case1.5 °C/W - Allows direct heatsink mounting for 100 W dissipation at ≤150°C junction temperature.
VGS(th)1.0–1.8 V - Ensures turn-on with 3.3 V or 5 V logic, eliminating need for level-shifting gate drivers.
tr/tf75/18 ns - Enables clean 500 kHz–1 MHz PWM operation with minimal overlap loss in synchronous rectification.

Pinout & Package

Package: D2PAK (TO-263), surface-mount, single-ended heat transfer via exposed drain pad. JEDEC-compliant ECOPACK® lead-free construction.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputHigh-impedance MOS gate requiring <100 nA leakage; connects to gate driver output through series resistor for dV/dt control.
2 (Source)Reference nodeCommon return path for load current and gate drive reference; must be low-inductance connection to minimize shoot-through risk.
3 (Drain)Power outputExposed copper pad on underside - electrically tied to drain and serves as primary thermal interface to heatsink or PCB copper pour.

Key Features

FeatureDesign Value
STripFET™ III processReduces RDS(on) × Qg by >30% vs prior generation, directly lowering total power loss in high-frequency SMPS.
Low threshold voltageVGS(th) range (1.0–1.8 V) ensures reliable turn-on with standard microcontroller GPIOs or low-voltage drivers.
Fast body diode35 ns reverse recovery time enables use in synchronous rectifier configurations without external Schottky diode.
Avalanche-rated600 mJ single-pulse EAS supports rugged operation in inductive switching applications like motor drives and solenoid control.
ECOPACK® complianceLead-free second-level interconnect meets RoHS and JEDEC JESD97 standards for environmental safety and reliability.

Applications

Industrial DC-DC ConvertersServer VRMs

Use Scenario: High-density 12 V → 1.2 V point-of-load conversion in telecom base station power modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 600 kHz with synchronous rectification.

Use Value: 5.2 mΩ RDS(on) reduces conduction loss by 40% vs comparable 8 mΩ devices, improving full-load efficiency from 89% to 92%.

Use Scenario: Multiphase buck regulator supplying CPU core voltage in enterprise servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 3-phase interleaved topology.

Use Value: Fast 35 ns trr and low Qrr minimize dead-time losses and prevent cross-conduction during phase transitions.

Motor Drive Half-BridgesLED Driver Switches

Use Scenario: 24 V BLDC motor gate driver stage in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with bootstrap high-side gate drive.

Use Value: 60 A continuous rating supports 500 W motor output; 1.5 °C/W Rthj-case allows direct heatsink mounting without thermal derating.

Use Scenario: Constant-current LED string switching in architectural lighting controllers.

IC Role / Device Role / Timing Role: PWM dimming switch controlling 30 A LED loads at 1–10 kHz frequency.

Use Value: Low 1.3 V VSD forward drop in body diode mode enables efficient freewheeling during off-cycle, reducing thermal stress on external components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404ZPBFRDS(on) = 4.7 mΩ @ 10 V but Qg = 131 nC; higher switching loss at >200 kHz.Better for low-frequency, high-current linear regulation; less optimal for high-frequency SMPS.Select when gate drive strength exceeds 2 A and switching frequency remains below 150 kHz.
STL110N10F7RDS(on) = 5.5 mΩ @ 10 V, Qg = 38 nC, but VDSS = 100 V - over-specified voltage rating increases cost and capacitance.Suitable for 48 V systems; unnecessary headroom for 24 V rails increases Ciss and slows switching.Prefer only if future voltage scalability to 48 V is required and board space permits larger D2PAK footprint.

Compared with IRF1404ZPBF and STL110N10F7, STB100NH02LT4 delivers optimal balance of low RDS(on), moderate Qg, and precise 24 V rating - making it the most thermally efficient choice for fixed 24 V DC-DC converters operating above 300 kHz.

Availability

STB100NH02LT4 is available at Aetrix Electronics and suitable for industrial DC-DC converters, server VRMs, and motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for STB100NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ III Power MOSFET product line targets high-efficiency power conversion in space-constrained applications, emphasizing low RDS(on) × Qg and rugged avalanche performance for mission-critical power stages.

FAQ

Is STB100NH02LT4 suitable for 3.3 V logic-level gate drive?

Yes - its gate threshold voltage ranges from 1.0 V to 1.8 V, ensuring reliable turn-on with 3.3 V microcontroller outputs. However, full RDS(on) specification (5.2 mΩ) requires VGS ≥ 10 V; at 3.3 V, RDS(on) rises to ~25 mΩ, limiting use to low-duty-cycle or low-current applications unless paralleled.

What is the maximum safe operating frequency for STB100NH02LT4 in a buck converter?

Based on its 75 ns rise time and 18 ns fall time with 4.7 Ω gate resistor, STB100NH02LT4 supports clean switching up to 1 MHz. Practical limits are set by gate drive capability and thermal management: at 60 A and 500 kHz, junction temperature must remain ≤150°C using a heatsink with ≤1.5 °C/W thermal resistance.

Does STB100NH02LT4 require a gate resistor, and what value is recommended?

Yes - a gate resistor is mandatory to control dV/dt and prevent oscillation. ST's datasheet specifies 4.7 Ω for switching time and EMI characterization. For 500 kHz operation with 1 A peak gate driver, 4.7–10 Ω balances speed and ringing suppression; values <3.3 Ω risk overshoot and shoot-through in half-bridge configurations.

Can STB100NH02LT4 replace STB100NH02L in existing designs?

Yes - STB100NH02LT4 is the tape-and-reel packaging variant of STB100NH02L, sharing identical electrical, thermal, and mechanical specifications. The "T4" suffix denotes D2PAK in 1000-unit tape-and-reel format; no layout or schematic changes are needed for substitution in automated assembly lines.

STB100NH02LT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ III
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
24 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2850 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

STB100NH02LT4 FAQ

1.How can I place an order for STB100NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB100NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB100NH02LT4 reliable?

The price and inventory of STB100NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB100NH02LT4 is usually 5 days.

3.What payment methods are accepted for STB100NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB100NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB100NH02LT4?

STB100NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB100NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB100NH02LT4?

For technical support, including STB100NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB100NH02LT4 requirements.

6.How does Aetrix verify that STB100NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STB100NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB100NH02LT4 meets industry standards.

7.What is the process for return or replacement of STB100NH02LT4?

All STB100NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB100NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB100NH02LT4 part is unused and in its original packaging.

Return procedure for STB100NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STB100NH02LT4 Tags

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