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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB10LN80K5

Name: STB10LN80K5
Brand: STMicroelectronics
SKU: STB10LN80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB10LN80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB10LN80K5.pdf

Description:: MOSFET N-CHANNEL 800V 8A D2PAK

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Product details

Overview

STB10LN80K5 from STMicroelectronics is an N-channel 800 V, 550 mΩ typ. (630 mΩ max.), 8 A MDmesh K5 Power MOSFET in D²PAK package, designed for high-voltage switching in industrial SMPS, PFC stages, and HV DC-DC converters where low conduction loss and ultra-low gate charge are critical.

For engineers reviewing the STB10LN80K5 datasheet, STB10LN80K5 pinout, STB10LN80K5 application, or STB10LN80K5 equivalent, key selection criteria include R_DS(on) × area efficiency, 15 nC total gate charge, 100% avalanche-tested ruggedness, Zener-protected gate, and 50 V/ns MOSFET dv/dt ruggedness under 640 V operation.

Technical Context

This device implements ST's MDmesh K5 vertical superjunction architecture to achieve industry-leading figure of merit (R_DS(on) × Q_g = 9.45 Ω·nC) and 4.5 V/ns diode recovery dv/dt capability. Its Zener-protected gate structure enables robust ±30 V gate-source tolerance without external clamping.

The MOSFET delivers 240 mJ single-pulse avalanche energy at T_J = 25 °C with I_AR = 2.7 A, and supports fast switching with t_d(off) = 28 ns and t_f = 13 ns under 400 V/4 A resistive load conditions using 4.7 Ω gate resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full bridge or clamp-mode topologies up to 640 V bus voltage with margin.
R_DS(on) max	630 mΩ at V_GS = 10 V, I_D = 4 A - Enables <1.3 W conduction loss at 8 A continuous drain current.
Q_g	15 nC - Reduces gate drive power and allows use of smaller, lower-cost gate drivers.
E_AS	240 mJ - Supports unclamped inductive switching without external snubbers in flyback or resonant converters.
R_thJC	1.14 °C/W - Enables 96.5 W usable power dissipation at T_C = 100 °C before reaching 150 °C junction limit.
dv/dt ruggedness	50 V/ns - Ensures reliable turn-off immunity against parasitic ringing in high-di/dt hard-switched topologies.
V_SD	1.5 V at I_SD = 4.5 A - Low forward drop improves synchronous rectification efficiency in LLC secondary side.

Pinout & Package

D²PAK (TO-263) package: 3-pin surface-mount outline with exposed drain tab (pin 2) for thermal and electrical connection; standard footprint per Figure 21 (DS10992 Rev 3, p.11); RoHS-compliant ECOPACK2 grade.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 0–10 V logic-level drive; Zener-protected to ±30 V for ESD and transient immunity.
2 (TAB/D)	Drain (exposed tab)	Main high-side power path; electrically and thermally connected to PCB copper pour for ≤1.14 °C/W junction-to-case transfer.
3 (S)	Source	Reference node for gate drive and current sensing; tied to source of upstream driver or ground-referenced control circuitry.

Key Features

Feature	Design Value
Ultra-low FoM (R_DS(on) × Q_g)	9.45 Ω·nC - Delivers highest power density among 800 V MOSFETs in D²PAK, reducing board area by ≥20% vs prior-gen devices.
100% avalanche tested	Single-pulse E_AS = 240 mJ at T_J = 25 °C - Guarantees ruggedness in overvoltage fault conditions without derating.
Zener-protected gate	±30 V V_GS rating - Eliminates need for external gate Zener clamps in noisy industrial environments.
Low C_oss & C_rss	43 pF C_oss, 0.25 pF C_rss - Minimizes capacitive losses and improves zero-voltage switching (ZVS) behavior in resonant topologies.

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-End Stages

Use Scenario: Primary-side switch in 1–3 kW telecom and server SMPS operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling full input power conversion; operates in hard-switched or quasi-resonant mode.

Use Value: 630 mΩ R_DS(on) and 15 nC Q_g reduce conduction + switching losses by 18% versus STW20NK80Z, improving full-load efficiency to >95%.

Use Scenario: Boost switch in 3.3 kW three-phase active front-end for motor drives and UPS systems.

IC Role / Device Role / Timing Role: Fast-turning, high-dv/dt tolerant switch managing 800 V peak line-to-line transients during regeneration.

Use Value: 50 V/ns MOSFET dv/dt ruggedness prevents false turn-on during rapid bus collapse, eliminating need for gate resistors >10 Ω.

High-Voltage DC-DC Converters

Inductive Load Drivers (HV Solenoids/Valves)

Use Scenario: Primary switch in isolated 1.5 kV output DC-DC for EV battery management and grid-tied inverters.

IC Role / Device Role / Timing Role: High-breakdown, low-loss switch enabling compact transformer design via higher frequency operation (up to 250 kHz).

Use Value: 800 V V_DS rating with 2.7 A repetitive avalanche current supports safe operation during output short-circuit events without desat protection.

Use Scenario: High-side driver for 48–400 V solenoid valves in industrial automation PLC I/O modules.

IC Role / Device Role / Timing Role: Robust, Zener-gated switch delivering precise on/off timing with minimal shoot-through risk during PWM control.

Use Value: 1.5 V V_SD forward drop ensures <1.2 W self-heating at 8 A pulsed loads, enabling direct PCB mounting without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	Higher R_DS(on) (850 mΩ), higher Q_g (35 nC), no Zener gate protection	Limited to lower-frequency (<65 kHz), lower-efficiency designs due to higher switching/conduction losses	Select when cost sensitivity outweighs efficiency targets and gate protection is implemented externally.
IPP60R190C7	650 V rating, lower R_DS(on) (190 mΩ), but only 650 V breakdown limits use in 800 V bus systems	Not suitable for 800 V topologies; requires redesign of bus voltage and snubber networks	Choose only if system bus is ≤650 V and higher current density (12 A) is required in same footprint.

Compared with STW20NK80Z and IPP60R190C7, STB10LN80K5 uniquely combines 800 V rating, Zener gate protection, and sub-10 Ω·nC FoM-making it the sole option for space-constrained, high-efficiency 800 V switching where gate reliability and avalanche margin are non-negotiable.

Availability

STB10LN80K5 is available at Aetrix Electronics and suitable for industrial SMPS, active PFC front-ends, and high-voltage DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for STB10LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching in 600–1000 V industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB10LN80K5 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 (Absolute Maximum Ratings). This reflects thermal derating from its 8 A rating at 25 °C, based on R_thJC = 1.14 °C/W and T_J(max) = 150 °C. Operation above 5 A at 100 °C case requires forced cooling or reduced duty cycle to maintain junction temperature within limits.

Does this MOSFET include integrated body diode recovery optimization?

Yes-the STB10LN80K5 features optimized source-drain diode characteristics with t_rr = 350 ns (T_J = 25 °C) and Q_rr = 3.9 µC, verified under ISD = 8 A, di/dt = 100 A/µs, and V_DD = 60 V. Its low reverse recovery charge and soft recovery profile reduce EMI and switching losses in hard-commutated circuits like boost PFC.

Can STB10LN80K5 be used in avalanche mode for energy clamping?

Yes-this device is 100% avalanche tested with E_AS = 240 mJ (single pulse, T_J = 25 °C, I_AR = 2.7 A, V_DD = 50 V). It is qualified for controlled unclamped inductive switching in flyback or forward converters where energy must be safely absorbed in the silicon rather than dissipated externally.

Is the D²PAK package lead-free and RoHS compliant?

Yes-the STB10LN80K5 is manufactured in ECOPACK2-compliant D²PAK (TO-263) packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device uses matte tin plating on leads and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 3 for surface-mount assembly.

STB10LN80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 630mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 427 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB10LN80K5 FAQ

1.How can I place an order for STB10LN80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB10LN80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB10LN80K5 reliable?

The price and inventory of STB10LN80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB10LN80K5 is usually 5 days.

3.What payment methods are accepted for STB10LN80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB10LN80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB10LN80K5?

STB10LN80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB10LN80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB10LN80K5?

For technical support, including STB10LN80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB10LN80K5 requirements.

6.How does Aetrix verify that STB10LN80K5 is sourced from the original manufacturer or authorized distributors?

All STB10LN80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB10LN80K5 meets industry standards.

7.What is the process for return or replacement of STB10LN80K5?

All STB10LN80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STB10LN80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB10LN80K5 part is unused and in its original packaging.

Return procedure for STB10LN80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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