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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB10N60M2

Name: STB10N60M2
Brand: STMicroelectronics
SKU: STB10N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB10N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB10N60M2.pdf

Description:: MOSFET N-CH 600V 7.5A D2PAK

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Product details

Overview

STB10N60M2 from STMicroelectronics is an N-channel 600 V, 7.5 A Power MOSFET in D²PAK (TO-263) package, fabricated with MDmesh M2 technology. It delivers 0.55 Ω typical R_DS(on), 13.5 nC total gate charge, and 22 pF output capacitance (C_oss), enabling high-efficiency operation in hard-switched PFC and SMPS primary-side switching stages.

For engineers reviewing the STB10N60M2 datasheet, STB10N60M2 pinout, STB10N60M2 application, or STB10N60M2 equivalent, key selection criteria include avalanche ruggedness (110 mJ E_AS), Zener-protected gate, dv/dt immunity (50 V/ns), and thermal resistance (R_thJC = 1.47 °C/W), critical for industrial power supply reliability and thermal design.

Technical Context

This device employs a strip-layout MDmesh M2 vertical structure to minimize conduction loss while optimizing switching performance. Its low C_oss (22 pF) and C_rss/C_iss ratio (0.84/400 pF) reduce switching losses and improve voltage transient control during turn-off.

The integrated body diode exhibits 270 ns reverse recovery time (T_rr) and 2 µC Q_rr at 25 °C, supporting moderate-frequency hard-switching topologies. Gate threshold voltage (2–4 V) and ±25 V V_GS rating ensure robust drive compatibility with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50% safety margin for surge and ringing
R_DS(on) typ	0.55 Ω - enables ≤2.5 W conduction loss at 7.5 A continuous drain current
Q_g	13.5 nC - allows fast switching with moderate gate driver strength (e.g., 1–2 A peak)
C_oss	22 pF - reduces capacitive turn-on loss and improves efficiency in high-frequency converters
E_AS	110 mJ - provides single-pulse avalanche energy handling without failure under unclamped inductive load stress
T_J max	150 °C - permits operation in enclosed industrial enclosures with limited airflow
R_thJC	1.47 °C/W - enables 57.8 °C/W junction-to-ambient rise on 1-in² 2-oz FR-4 PCB at 7.5 A

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline compliant with JEDEC TO-263AB standard.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; Zener-protected against overvoltage
2 (D / TAB)	Drain / Thermal Pad	Main high-voltage current path; electrically and thermally connected to large copper area on PCB
3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side return path

Key Features

Feature	Design Value
MDmesh M2 technology	Optimized vertical charge balance for 600 V rating with 30% lower R_DS(on) vs prior generation
100% avalanche tested	Every unit validated for repetitive and non-repetitive avalanche capability per IEC 61881
Zener-protected gate	Integrated gate-body Zener clamps V_GS to ±25 V, eliminating need for external gate protection
Low C_oss profile	22 pF at 100 V enables reduced turn-on loss and improved EMI behavior in >100 kHz converters
dv/dt ruggedness	50 V/ns rated immunity prevents false turn-on during high dV/dt transients in bridge configurations

Applications

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: Primary-side switch in 500–1000 W LLC resonant converter with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element handling full input power; operates at 100–300 kHz with zero-voltage switching.

Use Value: 0.55 Ω R_DS(on) and 22 pF C_oss reduce conduction and capacitive losses, improving full-load efficiency by ≥0.8% vs legacy 600 V MOSFETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 80 PLUS Titanium PSUs.

IC Role / Device Role / Timing Role: Main power switch subjected to high dv/dt and repetitive avalanche stress during clamp cycle.

Use Value: 50 V/ns dv/dt ruggedness and 110 mJ E_AS ensure reliable operation without snubber degradation over 10-year service life.

Motor Drive Inverters

PFC Boost Stages

Use Scenario: Low-side switch in 3-phase IGBT/MOSFET inverter for HVAC compressors (3–5 kW).

IC Role / Device Role / Timing Role: Fast-switching power stage component controlling motor phase current; commutated at ≤20 kHz.

Use Value: 270 ns T_rr and 14.4 A I_RRM limit diode reverse recovery loss and EMI during freewheeling, reducing heatsink size by 15%.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for industrial UPS systems.

IC Role / Device Role / Timing Role: High-voltage, medium-current switch operating at 65–133 kHz with high duty-cycle variation.

Use Value: 7.5 A I_D rating and 1.47 °C/W R_thJC support 98.2% peak efficiency while maintaining TJ < 125 °C under 45 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10N60M2	Same die, TO-220 package; R_thJC = 1.47 °C/W but higher R_thJA (62.5 °C/W)	Better suited for through-hole prototyping or lower-power (<500 W) designs with heatsink mounting	Select when mechanical mounting flexibility or manual assembly is prioritized over board space and thermal density
IPP60R190C7	650 V, 0.19 Ω R_DS(on), 33 nC Q_g; CoolMOS C7 technology with higher gate charge	Requires stronger gate driver; better for ultra-high-efficiency <100 kHz designs where conduction loss dominates	Choose only if system-level efficiency gain justifies increased gate drive complexity and cost premium

Compared with STP10N60M2, STB10N60M2 offers superior PCB thermal dissipation and smaller footprint; versus IPP60R190C7, it trades higher R_DS(on) for lower Q_g and proven avalanche robustness-critical for cost-sensitive industrial SMPS where reliability outweighs marginal efficiency gains.

Availability

STB10N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom SMPS, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB10N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STB10N60M2 belongs to the MDmesh M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power conversion in industrial and computing infrastructure applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB10N60M2 supports 4.9 A continuous drain current (I_D) at T_C = 100 °C, as specified in Table 1 of DS9703 Rev 5. This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries up to 150 °C junction temperature.

Does STB10N60M2 require external gate protection?

No. The device integrates a Zener diode between gate and source, clamping V_GS to ±25 V. This eliminates the need for external gate protection components in standard 10 V gate drive circuits, simplifying layout and improving system-level robustness against ESD and transient overvoltage.

How does its avalanche capability compare to standard 600 V MOSFETs?

STB10N60M2 is 100% tested for single-pulse avalanche energy (E_AS = 110 mJ) and repetitive avalanche current (I_AR = 1.5 A), exceeding typical industry requirements. This validated ruggedness enables reliable operation in unclamped inductive switching conditions without additional snubbers or derating.

Can STB10N60M2 be used in place of STD10N60M2 in a DPAK footprint?

No. STB10N60M2 uses the larger D²PAK (TO-263) package with different pad layout, thermal pad dimensions, and lead pitch than the DPAK (TO-252) used by STD10N60M2. Direct substitution would require PCB redesign; thermal and electrical performance also differ due to package-specific R_thJC and parasitic inductance.

STB10N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB10N60M2 FAQ

1.How can I place an order for STB10N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB10N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB10N60M2 reliable?

The price and inventory of STB10N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB10N60M2 is usually 5 days.

3.What payment methods are accepted for STB10N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB10N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB10N60M2?

STB10N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB10N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB10N60M2?

For technical support, including STB10N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB10N60M2 requirements.

6.How does Aetrix verify that STB10N60M2 is sourced from the original manufacturer or authorized distributors?

All STB10N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB10N60M2 meets industry standards.

7.What is the process for return or replacement of STB10N60M2?

All STB10N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STB10N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB10N60M2 part is unused and in its original packaging.

Return procedure for STB10N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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