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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB10N65K3

Name: STB10N65K3
Brand: STMicroelectronics
SKU: STB10N65K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB10N65K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB10N65K3.pdf

Description:: MOSFET N-CH 650V 10A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STB10N65K3 from STMicroelectronics is an N-channel 650 V, 0.75 Ω typ., 10 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in SMPS, PFC stages, and industrial inverters. It features 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, 212 mJ single-pulse avalanche energy, and Zener-protected gate.

For engineers reviewing the STB10N65K3 datasheet, STB10N65K3 pinout, STB10N65K3 application, or STB10N65K3 equivalent, key selection criteria include R_DS(on) at 10 V (0.75 Ω typ.), C_iss (1180 pF), Q_g (42 nC), E_AS (212 mJ), and TO-220FP thermal resistance (R_thJC = 3.57 °C/W).

Technical Context

This MDmesh K3 device uses an optimized vertical structure to reduce R_DS(on) while maintaining high voltage blocking (650 V) and low intrinsic capacitance (C_oss = 125 pF, C_rss = 14 pF). Its improved diode reverse recovery (t_rr = 320 ns @ 25 °C, Q_rr = 2 µC) enables efficient hard-switching operation.

The MOSFET delivers stable gate threshold (V_GS(th) = 3.75 V typ.) across temperature and supports fast switching with t_d(on) = 14.5 ns and t_f = 35 ns under standard test conditions (V_DD = 310 V, R_G = 4.7 Ω). Avalanche robustness is validated at I_AR = 7.2 A and E_AS = 212 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400 V AC input PFC and 600 V bus applications without derating.
R_DS(on) max	1 Ω - Confirmed maximum on-resistance at T_C = 25 °C, V_GS = 10 V, ID = 3.6 A.
I_D cont	10 A @ T_C = 25 °C - Continuous drain current rating defining safe conduction capacity at case temperature.
E_AS	212 mJ - Single-pulse avalanche energy at V_DD = 50 V, enabling unclamped inductive load tolerance.
C_iss	1180 pF - Input capacitance at V_DS = 25 V, directly impacts gate drive power and switching loss.
Q_g	42 nC - Total gate charge required to switch from off to on, critical for gate driver sizing and timing control.
R_thJC	3.57 °C/W - Junction-to-case thermal resistance, determines heatsink interface requirements for thermal management.

Pinout & Package

Package: TO-220FP type B - Insulated plastic package with integral heat sink tab; creepage distance supports 2.5 kV RMS isolation between leads and external heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤ ±30 V gate-source voltage; Zener-protected against ESD (2.5 kV HBM).
2 (D)	Drain	Main high-side power terminal; connected to high-voltage rail; electrically tied to metal tab in TO-220FP.
3 (S)	Source	Power return and reference node; defines ground reference for gate drive; carries full load current (10 A continuous).

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 7.2 A repetitive avalanche current and 212 mJ single-pulse energy handling per unit.
Extremely high dv/dt capability	12 V/ns rated slope ensures immunity to false turn-on during fast voltage transients in bridge configurations.
Improved diode reverse recovery	t_rr = 320 ns and Q_rr = 2 µC at 25 °C reduce switching losses and EMI in synchronous rectification and freewheeling paths.
Zener-protected gate	Integrated gate-body Zener clamps transient overvoltage to ±20 V, eliminating need for external gate protection components.
Low C_oss and C_rss	C_oss = 125 pF and C_rss = 14 pF minimize Miller effect and improve hard-switching efficiency at high frequencies.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main high-side switching element in primary-side power conversion stage, handling 650 V DC bus and 10 A peak current.

Use Value: Low R_DS(on) (0.75 Ω typ.) and low Q_g (42 nC) reduce conduction and switching losses, improving full-load efficiency by ≥0.4% vs. prior-generation K2 devices.

Use Scenario: 3-phase 7.5 kW variable frequency drive for HVAC compressors and pumps, using 6-pack IGBT/MOSFET inverter module.

IC Role / Device Role / Timing Role: Upper-leg switching device in phase-leg configuration, operating with 12–15 kHz PWM and 600 V DC link.

Use Value: Robust 12 V/ns dv/dt immunity prevents spurious turn-on during cross-conduction events, reducing risk of shoot-through failure in motor control loops.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: 3 kW telecom rectifier with continuous conduction mode (CCM) boost PFC, operating at 65–100 kHz ambient up to 70 °C.

IC Role / Device Role / Timing Role: Boost switch in front-end PFC stage, subjected to high line voltage stress and thermal cycling.

Use Value: 100% avalanche testing ensures reliability under output short-circuit and overload fault conditions common in telecom infrastructure.

Use Scenario: Bidirectional OBC with dual active bridge (DAB) architecture, where MOSFETs operate in both buck and boost modes at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side switch in isolated DC/DC stage, requiring fast body diode recovery for zero-voltage switching (ZVS) transitions.

Use Value: Optimized t_rr (320 ns) and low Q_rr (2 µC) enable reliable ZVS across wide load range, reducing switching loss by up to 35% versus standard superjunction MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF10N65K3	Identical die and electrical specs; differs only in packaging (TO-220FP vs. TO-220); same marking "10N65K3" and R_DS(on), Q_g, E_AS.	Same thermal profile (R_thJC = 3.57 °C/W), but TO-220FP offers insulated mounting; TO-220 requires insulating washer.	Select STF10N65K3 when board-level insulation is required without additional hardware.
IPP65R190CFD7	Higher R_DS(on) (190 mΩ min), lower V_DS (650 V), higher Q_g (54 nC), and slower t_f (55 ns); no Zener gate protection.	Designed for consumer-grade SMPS; lacks 100% avalanche test and 2.5 kV isolation rating.	Choose only if cost sensitivity outweighs ruggedness requirements and isolation is not needed.

Compared with STF10N65K3, the identical-die alternative offers mechanical interchangeability with insulated mounting, while IPP65R190CFD7 trades ruggedness and integration for lower cost in non-critical applications-making STB10N65K3 optimal for industrial and telecom systems demanding guaranteed avalanche survival and gate protection.

Availability

STB10N65K3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB10N65K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh K3 product line targets high-efficiency, high-reliability power conversion systems-specifically engineered to replace older superjunction MOSFETs in 600 V+ SMPS, PFC, and inverter applications with superior R_DS(on) × Q_g figure-of-merit.

FAQ

Is STB10N65K3 pin-compatible with STF10N65K3?

Yes-both share identical TO-220FP package outline, pin assignment (G-D-S), and mechanical footprint. The STB10N65K3 and STF10N65K3 use the same die and electrical specifications; the only distinction is order code designation and minor internal documentation revision tracking per DS6285 Rev 5.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

For 100 kHz hard-switching with V_GS = 10 V drive, a gate resistor of ≤ 10 Ω is recommended to ensure t_f ≤ 35 ns and minimize switching loss. At 42 nC Q_g, a 10 Ω resistor yields ~420 ns rise time-so 4.7 Ω is typical for balanced speed and ringing suppression in 650 V applications.

Does STB10N65K3 require external gate protection?

No-STB10N65K3 integrates a Zener diode between gate and source, rated for ±20 V clamping and qualified to 2.5 kV HBM ESD. External gate resistors and TVS diodes are unnecessary unless system-level transients exceed 2.5 kV or layout introduces >100 V/ns coupling.

Can STB10N65K3 be used in synchronous rectification?

No-it is an N-channel high-side switch optimized for main power conversion, not low-side synchronous rectification. Its body diode has t_rr = 320 ns and V_SD = 1.5 V at 7 A, which is too slow and lossy for SR duty; dedicated low-V_F, fast-recovery MOSFETs like STP16NF06L are preferred for that role.

STB10N65K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB10N65K3 FAQ

1.How can I place an order for STB10N65K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB10N65K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB10N65K3 reliable?

The price and inventory of STB10N65K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB10N65K3 is usually 5 days.

3.What payment methods are accepted for STB10N65K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB10N65K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB10N65K3?

STB10N65K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB10N65K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB10N65K3?

For technical support, including STB10N65K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB10N65K3 requirements.

6.How does Aetrix verify that STB10N65K3 is sourced from the original manufacturer or authorized distributors?

All STB10N65K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB10N65K3 meets industry standards.

7.What is the process for return or replacement of STB10N65K3?

All STB10N65K3 units undergo pre-shipment inspection (PSI). If there is an issue with STB10N65K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB10N65K3 part is unused and in its original packaging.

Return procedure for STB10N65K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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