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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB10N95K5

Name: STB10N95K5
Brand: STMicroelectronics
SKU: STB10N95K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB10N95K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB10N95K5.pdf

Description:: MOSFET N-CH 950V 8A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STB10N95K5 from STMicroelectronics is an N-channel 950 V, 8 A high-voltage Power MOSFET using MDmesh K5 technology, featuring 650 mΩ typ. R_DS(on), 22 nC total gate charge, and 100% avalanche tested. It delivers ultra-low FoM for high-efficiency switching in offline SMPS, PFC stages, and industrial inverters operating up to 150 °C junction temperature.

For engineers reviewing the STB10N95K5 datasheet, STB10N95K5 pinout, STB10N95K5 application, or STB10N95K5 equivalent, key selection criteria include V_BRDSS = 950 V, R_DS(on) ≤ 800 mΩ at V_GS = 10 V, Q_g = 22 nC, dV/dt ruggedness of 50 V/ns, and TO-263 (D²PAK) package thermal resistance R_thJC = 0.96 °C/W.

Technical Context

This device implements a proprietary vertical MDmesh K5 structure enabling simultaneous reduction of on-resistance and gate charge-critical for high-frequency, high-voltage hard-switching topologies. Its Zener-protected gate ensures robustness against transient overvoltage during gate drive faults.

The integrated body diode exhibits 404 ns reverse recovery time (T_J = 25 °C) and 5.2 µC Q_rr, supporting quasi-resonant and LLC converter operation. Avalanche capability is validated at 2.5 A repetitive I_AR and 122 mJ E_AS under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	950 V - Withstands 950 V drain-source breakdown voltage, enabling direct connection to 600–800 V DC bus lines without derating.
R_DS(on) max	800 mΩ at V_GS = 10 V, I_D = 4 A - Limits conduction loss to ≤ 25.6 W at 8 A continuous current in TO-263 package.
Q_g	22 nC - Enables fast turn-on/turn-off with low gate driver power demand; supports >100 kHz switching in PFC designs.
dV/dt ruggedness	50 V/ns - Sustains high dv/dt transients common in high-side switching and transformer-coupled topologies without false triggering.
E_AS	122 mJ - Provides unclamped inductive switching margin for flyback and forward converters with energy recovery requirements.
R_thJC	0.96 °C/W - Enables 130 W power dissipation at T_C = 25 °C; critical for thermally constrained PCB-mount applications.
I_D cont @ T_C = 100 °C	5 A - Specifies usable current derating for sustained operation in enclosed industrial enclosures with heatsink-limited case temperature.

Pinout & Package

STB10N95K5 is housed in a D²PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection. The package features three terminals: Drain (Tab), Gate (Pin 1), Source (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-voltage current path output	Exposed copper tab serves as primary heat sink interface and high-current return path; must be soldered to ≥1 in² 2-oz copper area.
Gate (Pin 1)	Control input for channel conduction	Low-impedance gate terminal requiring <6.5 Ω series resistance to damp ringing; sensitive to ESD (±30 V rating).
Source (Pin 2)	Reference node for gate drive and current sensing	Provides Kelvin source connection point; layout must minimize inductance between source pin and gate driver ground to avoid shoot-through risk.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM by >40% vs. prior-generation 900 V MOSFETs, enabling higher power density in compact adapters.
Zener-protected gate	Integrated gate oxide protection clamps transients up to ±30 V, eliminating need for external gate Zener in cost-sensitive industrial controls.
100% avalanche tested	Every unit undergoes production-level unclamped inductive switching test at I_AR = 2.5 A, ensuring field reliability in overload conditions.
Ultra-low C_oss (50 pF)	Minimizes capacitive turn-off losses and improves zero-voltage switching (ZVS) margin in resonant half-bridge topologies.
High dV/dt immunity (50 V/ns)	Prevents spurious turn-on during high-speed switching in multi-kW motor drives where parasitic coupling is unavoidable.

Applications

Industrial AC-DC Power Supplies

Telecom Rectifier Modules

Use Scenario: Primary-side switch in 1–3 kW active clamp forward or LLC resonant converters feeding 48 V telecom distribution buses.

IC Role / Device Role / Timing Role: High-voltage power switch handling 700–800 V DC link with 100–300 kHz switching frequency and strict efficiency targets.

Use Value: 650 mΩ typ. R_DS(on) and 22 nC Q_g reduce total switching + conduction loss by ≥12% vs. legacy 900 V MOSFETs at full load.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating at universal AC input (90–264 VAC) with THD <5%.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing peak currents up to 32 A pulsed.

Use Value: 50 V/ns dV/dt ruggedness prevents false turn-on during line-voltage zero-crossing transitions in high-noise telecom environments.

EV Onboard Charger (OBC) PFC

Industrial Motor Drive Inverter Stages

Use Scenario: Front-end boost PFC in bi-directional OBC systems converting AC grid to 400–800 V DC battery bus.

IC Role / Device Role / Timing Role: High-reliability switch rated for 150 °C junction operation and repeated avalanche stress during regenerative braking events.

Use Value: 122 mJ E_AS and 100% production avalanche testing ensure safe operation during grid fault-induced overvoltage surges.

Use Scenario: High-side switch in 3-phase IGBT/MOSFET inverter driving 7.5–15 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage blocking element in 3-level NPC or active neutral-point-clamped topologies.

Use Value: 0.96 °C/W R_thJC enables direct mounting to aluminum heatsink without thermal interface pads, reducing system BOM count and thermal resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10N95K5	Same die, TO-220 through-hole package; R_thJC = 4.2 °C/W vs. 0.96 °C/W for STB10N95K5.	Preferred for prototyping, lower-volume industrial controls where manual assembly and heatsink bolt-down are acceptable.	Select when mechanical robustness and serviceability outweigh thermal performance and board space constraints.
IXTH10N90L2	900 V rating (vs. 950 V), 1.2 Ω R_DS(on), 35 nC Q_g; uses L2 planar process, not MDmesh K5.	Suitable for 400–600 V DC bus applications but lacks margin for 800 V systems and exhibits higher switching loss.	Choose only if 900 V rating suffices and gate drive capability permits higher Q_g burden; not drop-in for 950 V designs.

Compared with STP10N95K5, STB10N95K5 offers 4.4× better thermal resistance for surface-mount reliability in automated production, while IXTH10N90L2 trades 50 V voltage headroom and 39% higher FoM for legacy process compatibility-making STB10N95K5 optimal for new 800 V+ designs demanding efficiency and miniaturization.

Availability

STB10N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for STB10N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STB10N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications including server PSUs, telecom infrastructure, and industrial motor drives.

FAQ

What is the maximum continuous drain current for STB10N95K5 at 100 °C case temperature?

The maximum continuous drain current is 5 A at T_C = 100 °C, as specified in Table 1 of DS9774 Rev 4. This derating reflects thermal limits of the D²PAK package and ensures junction temperature remains ≤150 °C under steady-state conduction with proper PCB copper area and airflow.

Does STB10N95K5 include integrated gate protection?

Yes-STB10N95K5 integrates a Zener diode between gate and source to clamp gate voltage transients. The absolute maximum gate-source voltage is ±30 V, and this protection is implemented directly in the silicon die, eliminating the need for external gate Zener components in most designs.

Can STB10N95K5 be used in avalanche-mode operation?

Yes-every STB10N95K5 unit undergoes 100% production avalanche testing per IEC 61131-2. It supports repetitive avalanche current of 2.5 A and single-pulse energy of 122 mJ at T_J = 25 °C, making it suitable for unclamped inductive switching in flyback and forward converters.

What is the recommended PCB footprint for STB10N95K5's D²PAK package?

The recommended footprint matches the D²PAK (TO-263) type A outline in Figure 25 of DS9774 Rev 4: 9.35 mm × 10.40 mm pad for the drain tab, with 2.54 mm pitch for gate and source pins. A minimum 1 in² area of 2-oz copper is required beneath the tab to achieve the specified R_thJA = 30 °C/W.

STB10N95K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 630 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB10N95K5 FAQ

1.How can I place an order for STB10N95K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB10N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB10N95K5 reliable?

The price and inventory of STB10N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB10N95K5 is usually 5 days.

3.What payment methods are accepted for STB10N95K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB10N95K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB10N95K5?

STB10N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB10N95K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB10N95K5?

For technical support, including STB10N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB10N95K5 requirements.

6.How does Aetrix verify that STB10N95K5 is sourced from the original manufacturer or authorized distributors?

All STB10N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB10N95K5 meets industry standards.

7.What is the process for return or replacement of STB10N95K5?

All STB10N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STB10N95K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB10N95K5 part is unused and in its original packaging.

Return procedure for STB10N95K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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