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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB10NK60ZT4

Name: STB10NK60ZT4
Brand: STMicroelectronics
SKU: STB10NK60ZT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB10NK60ZT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB10NK60ZT4.pdf

Description:: MOSFET N-CH 600V 10A D2PAK

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Product details

Overview

STB10NK60ZT4 from STMicroelectronics is a Zener-protected N-channel 600 V, 10 A SuperMESH Power MOSFET in D²PAK (TO-263) package, featuring 0.75 Ω max R_DS(on), 100% avalanche tested operation, and 4.5 V/ns peak diode recovery dv/dt capability - deployed in high-reliability AC-DC PFC stages and industrial motor drive half-bridges.

For engineers reviewing the STB10NK60ZT4 datasheet, STB10NK60ZT4 pinout, STB10NK60ZT4 application, or STB10NK60ZT4 equivalent, key selection criteria include verified avalanche energy (300 mJ single-pulse), gate charge (48–70 nC), thermal resistance (R_thJC = 1.09 °C/W), and Zener-protected gate-source architecture for robust ESD immunity (4 kV HBM).

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - optimizing cell pitch and drift region doping to simultaneously reduce R_DS(on) and enhance dv/dt ruggedness. Its Zener-protected gate structure clamps transient overvoltage before oxide breakdown, enabling reliable operation in inductive switching environments.

The MOSFET supports unclamped inductive switching with I_AR = 10 A repetitive avalanche current and E_AS = 300 mJ at T_J = 25 °C. Its low C_iss (1370 pF) and C_rss (37 pF) minimize Miller effect, while Q_gd/Q_gs ratio of ~2.5 supports fast, controllable turn-off in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage in 400 VAC input systems without derating.
R_DS(on) max	0.75 Ω at V_GS = 10 V, I_D = 4.5 A - Enables <1.5 W conduction loss at 10 A DC, critical for thermally constrained PFC designs.
I_D continuous @ T_C = 25 °C	10 A - Sustains full-rated load current with heatsink; derates to 5.7 A at 100 °C case temperature.
E_AS	300 mJ - Absorbs energy from inductive kickback during fault conditions without failure, eliminating need for external snubbers in many applications.
dv/dt capability	4.5 V/ns - Resists false turn-on during high-slew-rate commutation, essential for bridge-leg operation in SMPS and inverters.
Q_g	48–70 nC - Low gate charge enables efficient driving with standard 1-A gate drivers and reduces switching losses at 100 kHz.
R_thJC	1.09 °C/W - Enables direct mounting to heatsink with minimal thermal interface resistance; junction-to-case path optimized for D²PAK footprint.

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-terminal layout with 2.54 mm lead pitch; compatible with automated reflow assembly and offers superior thermal performance vs. TO-220FP.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; Zener-clamped to source (±30 V rating); requires <70 nC charge for full enhancement.
2 (D)	Drain	Main power output terminal; electrically connected to exposed metal tab; must be isolated from heatsink unless referenced to same potential.
3 (S)	Source	Power return and reference node; ties gate Zener cathode; forms common return for gate driver supply and sense circuitry.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for 300 mJ single-pulse avalanche energy - guarantees robustness in unclamped inductive switching without screening omissions.
Zener-protected gate	Integrated gate-source Zener (±30 V) eliminates need for external TVS, reducing BOM count and PCB area in space-constrained power stages.
SuperMESH technology	Reduces R_DS(on) by >20% vs. prior PowerMESH generation while maintaining >4.5 V/ns dv/dt - improves efficiency and reliability trade-off.
Low Q_gd/Q_gs ratio	~2.5 (25 nC / 10 nC) - minimizes Miller plateau duration, enabling precise timing control and reduced shoot-through risk in synchronous rectifiers.
High ESD immunity	4 kV HBM rating - withstands handling and board-level transients without gate oxide damage, lowering field-failure rate in manufacturing and end-use.

Applications

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: Half-bridge switching in 3 kW HVAC inverter drives operating at 16 kHz with 400 VDC bus.

IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET hybrid bridge; handles 10 A RMS load with 50 ns turn-off delay and 30 ns fall time.

Use Value: Avalanche ruggedness prevents failure during motor stall events; 1.09 °C/W R_thJC enables compact heatsink design without forced air.

Use Scenario: Boost PFC stage in 1U 2 kW server power supply with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching FET in continuous conduction mode (CCM) boost converter; switches at 100 kHz with 48 nC gate drive.

Use Value: 0.75 Ω R_DS(on) limits conduction loss to <0.75 W at full load; Zener protection avoids gate damage from line surge-induced transients.

Solar Microinverters

Induction Heating Systems

Use Scenario: Full-bridge DC-AC inversion in 300 W microinverter with 400 V PV input and 230 VAC output.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge; sustains 10 A pulsed current (I_DM = 36 A) during zero-crossing transitions.

Use Value: 570 ns reverse recovery time (t_rr) and 4.3 µC Q_rr minimize body-diode losses during dead-time commutation.

Use Scenario: Resonant half-bridge in 5 kW domestic induction cooker operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch subjected to high di/dt (>200 A/µs) and voltage overshoot during ZVS transition failures.

Use Value: 4.5 V/ns dv/dt rating prevents spurious turn-on; 15 A I_RRM peak recovery current tolerance avoids secondary breakdown during resonant collapse.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60Z	Same die, TO-220 package; R_thJC = 3.6 °C/W (vs. 1.09 °C/W); no tape-and-reel packaging.	Requires larger heatsink and manual through-hole assembly; unsuitable for high-density SMT production.	Select when legacy through-hole layout or lower-cost prototyping is prioritized over thermal performance and automation.
STW10NK60Z	Same die, TO-247 package; R_thJC = 0.8 °C/W; higher creepage/clearance; 3-pin isolated tab.	Better thermal performance than D²PAK but larger footprint; preferred in high-isolation industrial inverters.	Select when maximum power dissipation (>150 W) or reinforced insulation (2.5 kV RMS) is required beyond D²PAK capability.

Compared with STP10NK60Z and STW10NK60Z, STB10NK60ZT4 delivers optimal balance of SMT manufacturability, thermal efficiency (1.09 °C/W), and board-area savings - making it the preferred choice for high-volume, space-constrained 1–3 kW power converters where automated assembly and thermal headroom are critical.

Availability

STB10NK60ZT4 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, solar microinverters, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB10NK60ZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's SuperMESH Power MOSFET product line - engineered specifically for high-efficiency, high-reliability switching in 600 V industrial power conversion, emphasizing avalanche ruggedness, low gate charge, and Zener-protected gate integrity.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB10NK60ZT4 supports 5.7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS2635 Rev 12. This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries under sustained high-temperature conditions.

Does this MOSFET include integrated gate protection?

Yes - the STB10NK60ZT4 integrates a bidirectional gate-source Zener diode rated at ±30 V, providing inherent protection against electrostatic discharge and gate overvoltage transients without requiring external components.

Can STB10NK60ZT4 replace STP10NK60Z in existing TO-220 layouts?

No - STB10NK60ZT4 uses a D²PAK (TO-263) surface-mount package with different footprint, thermal pad layout, and pin assignment; mechanical redesign and PCB rework are required for substitution. It is not a drop-in replacement for through-hole TO-220 variants.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge is 4.3 µC, measured at I_SD = 8 A, di/dt = 100 A/µs, V_DD = 40 V, and T_J = 150 °C (Table 7). This value directly impacts commutation losses in synchronous rectification and half-bridge configurations.

STB10NK60ZT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB10NK60ZT4 FAQ

1.How can I place an order for STB10NK60ZT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB10NK60ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB10NK60ZT4 reliable?

The price and inventory of STB10NK60ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB10NK60ZT4 is usually 5 days.

3.What payment methods are accepted for STB10NK60ZT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB10NK60ZT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB10NK60ZT4?

STB10NK60ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB10NK60ZT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB10NK60ZT4?

For technical support, including STB10NK60ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB10NK60ZT4 requirements.

6.How does Aetrix verify that STB10NK60ZT4 is sourced from the original manufacturer or authorized distributors?

All STB10NK60ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB10NK60ZT4 meets industry standards.

7.What is the process for return or replacement of STB10NK60ZT4?

All STB10NK60ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB10NK60ZT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB10NK60ZT4 part is unused and in its original packaging.

Return procedure for STB10NK60ZT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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