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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB11N52K3

Name: STB11N52K3
Brand: STMicroelectronics
SKU: STB11N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB11N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB11N52K3.pdf

Description:: MOSFET N-CH 525V 10A D2PAK

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Product details

Overview

STB11N52K3 from STMicroelectronics is an N-channel SuperMESH3™ Power MOSFET in D²PAK package, rated for 525 V drain-source voltage, 0.41 Ω typical R_DS(on) at V_GS = 10 V and 5 A, 125 W power dissipation, and 100% avalanche tested - deployed in high-voltage AC-DC SMPS primary-side switching stages.

For engineers reviewing the STB11N52K3 datasheet, STB11N52K3 pinout, STB11N52K3 application, or STB11N52K3 equivalent, key selection criteria include its 12 V/ns dv/dt capability, Zener-protected gate, low 8 nC Q_gs, 32 nC Q_gd, and improved diode reverse recovery (t_rr = 270 ns @ 150 °C) for hard-switched PFC and resonant converters.

Technical Context

This device employs ST's proprietary SuperMESH3™ vertical structure, combining optimized cell pitch and charge balance to achieve ultra-low on-resistance while maintaining high breakdown voltage. Its gate threshold voltage (3–4.5 V) ensures robust turn-on margin under wide V_GS tolerance conditions.

The integrated back-to-back Zener diodes clamp gate-source transients up to ±30 V, eliminating external protection components. Dynamic performance is enhanced by minimized intrinsic capacitance (C_iss = 1400 pF, C_oss = 110 pF) and low gate resistance (R_g = 1–7 Ω), enabling fast, controlled switching with reduced EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	525 V - supports 400 VAC input rectified systems with 30% safety margin for surge handling
R_DS(on) max	0.51 Ω - limits conduction loss to ≤26 W at 10 A DC, critical for thermal management in enclosed enclosures
Q_g	51 nC - determines gate driver current requirement (≥10 mA avg for 5 µs turn-on)
E_AS	170 mJ - enables unclamped inductive switching without external snubbers in flyback or LLC designs
t_rr	270 ns (T_J = 25 °C) - reduces switching loss and voltage overshoot during diode commutation in bridge topologies
R_thj-case	1 °C/W - allows 125 W dissipation with ≤125 °C junction rise over heatsink at 25 °C ambient
dv/dt	12 V/ns - sustains noise immunity in high-dI/dt environments like motor drives without false triggering

Pinout & Package

STB11N52K3 is housed in a surface-mount D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads, 3.5 mm creepage, and RoHS-compliant ECOPACK®2 construction.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires <30 V absolute max rating; Zener-clamped to ±30 V
2 (D / TAB)	Drain / Exposed Pad	Main high-side current path; electrically and thermally connected to PCB copper pour
3 (S)	Source	Reference node for gate drive; connects to power ground or floating source in high-side configurations

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 170 mJ without derating - eliminates need for external clamping in cost-sensitive designs
Zener-protected gate	Integrated ±30 V gate-source Zener diodes replace discrete TVS, reducing BOM count and layout area
Extremely high dv/dt capability	12 V/ns rating prevents spurious turn-on during fast transient coupling in high-frequency SMPS
Improved diode reverse recovery	270 ns t_rr and 2700 nC Q_rr reduce switching losses and EMI in synchronous rectification and half-bridge operation
Low gate charge	51 nC total gate charge enables efficient driving with standard 1-A peak gate drivers at >100 kHz

Applications

Industrial AC-DC Adapters

Server PSU Primary Switch

Use Scenario: 300–500 W universal-input offline flyback converter operating at 65–130 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: 0.41 Ω R_DS(on) minimizes conduction loss at full load; 170 mJ E_AS absorbs leakage inductance spikes without snubber.

Use Scenario: 80 PLUS Titanium-certified 1.5 kW server power supply using active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching transistor in high-side position of dual-transistor forward stage.

Use Value: 12 V/ns dv/dt rating prevents false triggering during rapid bus voltage transitions; Zener gate protection withstands gate driver coupling noise.

LED Streetlight Driver

Telecom Rectifier Module

Use Scenario: 150 W isolated buck-boost LED driver for outdoor lighting with 90–305 VAC input range.

IC Role / Device Role / Timing Role: High-voltage switch in quasi-resonant (QR) controller-based PFC + DC-DC stage.

Use Value: Low C_oss (110 pF) enables zero-voltage switching across wide line range; 525 V rating covers 305 VAC + 50% surge.

Use Scenario: -48 V telecom rectifier module converting 277 VAC utility input to regulated DC output.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge configuration operating at 100 kHz.

Use Value: 270 ns t_rr reduces body-diode conduction loss during dead-time; 1 °C/W R_thj-case supports forced-air cooling at 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11N52K3	Same die, TO-220 package; R_thj-case = 1 °C/W but larger footprint and through-hole mounting	Better suited for prototyping or lower-volume industrial controls where manual assembly is preferred	Select when mechanical compatibility with legacy TO-220 heatsinks is required and board space permits
IPP60R190C7	650 V, 0.19 Ω, CoolMOS™ C7; higher voltage rating but 2× higher Q_g (105 nC) and no integrated Zener	Preferred in 600 V systems requiring tighter R_DS(on) but demands external gate protection and stronger driver	Choose only if system requires ≥600 V rating and can accommodate added gate protection circuitry

Compared with STP11N52K3, STB11N52K3 offers superior thermal performance per unit PCB area and automated assembly compatibility; versus IPP60R190C7, it trades voltage headroom for integrated gate protection and lower gate drive demand in 525 V-class designs.

Availability

STB11N52K3 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU primary switches, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STB11N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The SuperMESH3™ MOSFET product line targets high-efficiency, high-reliability offline power conversion - engineered specifically for ruggedized primary-side switching in SMPS, PFC, and lighting drivers where avalanche robustness and dv/dt immunity are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB11N52K3 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the D²PAK package under sustained high-temperature operation and must be validated against actual PCB copper area and airflow conditions.

Does STB11N52K3 require external gate protection?

No - the device integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage (BVGSO), eliminating the need for external TVS components. This protects against ESD events and gate transients up to ±2500 V HBM, simplifying layout and improving reliability.

Can STB11N52K3 be used in synchronous rectification?

No - STB11N52K3 is an N-channel high-side switch optimized for primary-side switching, not low-side synchronous rectification. Its body diode has relatively high V_SD (1.5 V) and t_rr (270 ns), making it unsuitable as a secondary-side rectifier where low forward drop and fast recovery are essential.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_C = 25 °C, the SOA is limited by R_DS(on) to approximately 10 A at 400 V (Figure 2). This defines the maximum simultaneous voltage-current stress the device can sustain without thermal runaway or avalanche failure during short-duration transients.

STB11N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 510mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB11N52K3 FAQ

1.How can I place an order for STB11N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB11N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB11N52K3 reliable?

The price and inventory of STB11N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB11N52K3 is usually 5 days.

3.What payment methods are accepted for STB11N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB11N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB11N52K3?

STB11N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB11N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB11N52K3?

For technical support, including STB11N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB11N52K3 requirements.

6.How does Aetrix verify that STB11N52K3 is sourced from the original manufacturer or authorized distributors?

All STB11N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB11N52K3 meets industry standards.

7.What is the process for return or replacement of STB11N52K3?

All STB11N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STB11N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB11N52K3 part is unused and in its original packaging.

Return procedure for STB11N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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