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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB11N65M5

Name: STB11N65M5
Brand: STMicroelectronics
SKU: STB11N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB11N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB11N65M5.pdf

Description:: MOSFET N CH 650V 9A D2PAK

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Product details

Overview

STB11N65M5 from STMicroelectronics is an N-channel 650 V, 430 mΩ typ. (480 mΩ max.), 9 A MDmesh M5 Power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency switch-mode power supplies, PFC stages, and industrial motor drives requiring low conduction loss and robust avalanche capability.

For engineers reviewing the STB11N65M5 datasheet, STB11N65M5 pinout, STB11N65M5 application, or STB11N65M5 equivalent, key selection criteria include its 1.47 °C/W junction-to-case thermal resistance, 17 nC total gate charge, 644 pF input capacitance, and 100% avalanche-tested ruggedness under unclamped inductive switching.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high voltage blocking (650 V V_(BR)DSS) and fast switching dynamics. Its 2.5 kV isolation rating (TO-220FP variant) and 15 V/ns dv/dt immunity support reliable operation in noisy industrial environments.

The integrated body diode exhibits 232 ns reverse recovery time (T_j = 25 °C) and 2 μC Q_rr, enabling efficient hard-switched topologies. Gate threshold voltage is tightly specified at 3–5 V (V_GS(th)), ensuring stable turn-on with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Sustains full rated bus voltage in offline SMPS and solar inverters without breakdown.
R_DS(on) max	480 mΩ @ V_GS = 10 V, I_D = 4.5 A - Enables <1.5 W conduction loss at 9 A continuous drain current (T_C = 25 °C).
I_D cont	9 A @ T_C = 25 °C - Supports high-current output stages in 300–500 W AC/DC adapters and server PSUs.
Q_g	17 nC - Reduces gate drive power and enables >100 kHz switching with low-side driver ICs like STGAP2S.
R_thJC	1.47 °C/W - Allows 85 W power dissipation with modest heatsinking; critical for compact, thermally constrained designs.
E_AS	130 mJ - Withstands single-pulse inductive energy in relay driving and UPS hold-up circuits without failure.
C_iss	644 pF - Low input capacitance minimizes Miller effect and improves noise immunity during high-dv/dt transitions.

Pinout & Package

D²PAK (TO-263) package: Surface-mount, isolated tab (drain-connected), 3-terminal configuration with exposed copper pad for thermal enhancement and mechanical anchoring.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to metal tab; requires insulated mounting or direct heatsink attachment with thermal interface material.
G (Pin 1)	Gate	High-impedance control terminal; 5 Ω gate resistance limits ringing; sensitive to ESD-requires proper handling and PCB layout.
S (Pin 3)	Source	Power return path and reference node for gate drive; must be low-inductance connection to minimize switching overshoot.

Key Features

Feature	Design Value
MDmesh M5 process technology	Enables 430 mΩ typ. R_DS(on) at 650 V - delivers best-in-class conduction efficiency for 600 V-class MOSFETs.
100% avalanche tested	Guarantees single-pulse ruggedness up to 130 mJ - eliminates need for external snubbers in flyback and LLC resonant converters.
Low Q_gd/Q_g ratio	8.5 nC / 17 nC = 0.5 - reduces Miller-induced shoot-through risk and improves hard-switching reliability.
Enhanced diode softness (Q_rr = 2 μC)	Minimizes EMI generation during freewheeling in synchronous rectification and half-bridge configurations.
ECOPACK® compliant	Meets RoHS and REACH requirements with halogen-free molding compound - suitable for green industrial and consumer products.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 80 PLUS Titanium server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main high-side switching element handling 9 A peak primary current and 400 V DC bus.

Use Value: 480 mΩ R_DS(on) and 1.47 °C/W R_thJC enable >96% efficiency at full load while maintaining junction temperature below 125 °C.

Use Scenario: Three-phase active front-end rectifier in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM) PFC stage.

Use Value: 17 nC Q_g and 644 pF C_iss allow clean 65 kHz switching with minimal gate drive loss and reduced EMI filter size.

Solar Microinverter DC-DC Stage

EV Onboard Charger HV Side

Use Scenario: Isolated DC-DC converter in residential solar microinverter interfacing 60–150 V PV string to 400 V DC link.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology.

Use Value: 15 V/ns dv/dt immunity and 232 ns trr ensure stable operation during zero-voltage switching transitions with minimal voltage stress.

Use Scenario: High-voltage DC-DC stage in 6.6 kW OBC converting 400 V battery to 12 V auxiliary rail.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in resonant LLC converter.

Use Value: Integrated source-drain diode with 1.5 V V_SD and 2 μC Q_rr reduces body diode conduction loss during dead-time, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11N65M5	TO-220 package; R_thJC = 1.47 °C/W same, but R_thJA = 62.5 °C/W vs. D²PAK's 30 °C/W.	Better suited for through-hole prototyping and lower-volume industrial controls where manual assembly is preferred.	Select when board space allows larger footprint and thermal management uses bolt-down heatsinks rather than planar copper pads.
IPP65R045C7	Infineon CoolMOS C7; 45 mΩ typ. R_DS(on) at 650 V, but higher Q_g (32 nC) and C_iss (1250 pF).	Superior conduction loss at partial load, but demands stronger gate driver and exhibits higher EMI in fast-switching designs.	Prefer for ultra-high-efficiency telecom PSUs >97%, but avoid in cost-sensitive or EMI-constrained applications like medical equipment.

Compared with STP11N65M5, STB11N65M5 offers superior thermal performance in surface-mount layouts and smaller PCB area; compared with IPP65R045C7, it trades 35 mΩ higher R_DS(on) for significantly lower gate charge and input capacitance-favoring designs prioritizing drive simplicity and EMI control over absolute conduction efficiency.

Availability

STB11N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STB11N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh M5 series targets high-efficiency power conversion systems demanding low R_DS(on), fast switching, and rugged avalanche performance-specifically engineered for next-generation SMPS, PFC, and renewable energy inverters.

FAQ

What is the maximum recommended gate-source voltage for STB11N65M5?

The absolute maximum V_GS is ±25 V, but ST recommends limiting gate drive to +10 V to +15 V for optimal R_DS(on) and reliability. Exceeding +15 V increases gate oxide stress and accelerates wear-out; operation below +5 V risks incomplete turn-on and excessive conduction loss due to elevated R_DS(on).

Can STB11N65M5 replace STB11N65M2 in existing designs?

No-STB11N65M2 has 650 V rating but uses older MDmesh M2 technology with 650 mΩ max. R_DS(on) and higher Q_g (24 nC). While pin-compatible and same package, STB11N65M5 delivers 26% lower conduction loss and faster switching, but requires gate drive strength verification due to different C_iss and Q_gd values.

Is the D²PAK tab electrically isolated in STB11N65M5?

No-the metal tab is internally connected to the drain terminal. It must be electrically isolated from the heatsink using insulating thermal pads or mica washers unless the heatsink is floating or referenced to drain potential. Failure to isolate may cause short-circuit or safety hazard in grounded-system applications.

Does STB11N65M5 require a negative gate voltage for turn-off in high-noise environments?

Not required, but recommended for robustness. The device turns off fully at V_GS = 0 V; however, applying –5 V during off-state suppresses dv/dt-induced false turn-on in high-frequency, high-dv/dt applications such as resonant LLC converters, especially when sharing a common source node with other switches.

STB11N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 480mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 644 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB11N65M5 FAQ

1.How can I place an order for STB11N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB11N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB11N65M5 reliable?

The price and inventory of STB11N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB11N65M5 is usually 5 days.

3.What payment methods are accepted for STB11N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB11N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB11N65M5?

STB11N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB11N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB11N65M5?

For technical support, including STB11N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB11N65M5 requirements.

6.How does Aetrix verify that STB11N65M5 is sourced from the original manufacturer or authorized distributors?

All STB11N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB11N65M5 meets industry standards.

7.What is the process for return or replacement of STB11N65M5?

All STB11N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB11N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB11N65M5 part is unused and in its original packaging.

Return procedure for STB11N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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