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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB11NM60-1

Name: STB11NM60-1
Brand: STMicroelectronics
SKU: STB11NM60-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB11NM60-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB11NM60-1.pdf

Description:: MOSFET N-CH 650V 11A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STB11NM60-1 from STMicroelectronics is an N-channel 600 V, 11 A, 0.4 Ω R_DS(on) MDmesh™ Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers high dv/dt immunity (15 V/ns), 100% avalanche tested operation, and low gate charge (30 nC) for efficient hard-switching.

For engineers reviewing the STB11NM60-1 datasheet, STB11NM60-1 pinout, STB11NM60-1 application, or STB11NM60-1 equivalent, key selection criteria include its 600 V breakdown voltage, 0.4 Ω on-resistance at V_GS = 10 V, 150 °C max junction temperature, TO-220 thermal resistance (0.78 °C/W), and avalanche energy rating (350 mJ).

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining Multiple Drain process with PowerMESH™ horizontal layout-to achieve ultra-low R_DS(on) while maintaining robust high-voltage ruggedness. Its 15 V/ns dv/dt capability and unclamped inductive switching (UIS) performance enable reliable operation in fast-switching flyback and resonant converters.

The device integrates a fast-recovery body diode (t_rr = 390 ns @ 25 °C) with low Q_rr (3.8 µC), supporting ZVS/ZCS topologies. Gate threshold voltage (3–5 V) ensures compatibility with standard 10 V gate drivers, and input capacitance (C_iss = 1000 pF) supports predictable drive requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-derived DC bus voltages in 400 V AC input systems with margin.
R_DS(on)	0.4 Ω (typ) @ V_GS = 10 V - Enables <1.2 W conduction loss at 11 A, reducing heatsink size.
I_D (cont)	11 A @ T_C = 25 °C - Supports continuous output power up to ~1.3 kW in well-cooled TO-220 designs.
E_AS	350 mJ - Rated single-pulse avalanche energy allows safe operation under transient overloads without snubbers.
Q_g	30 nC - Low total gate charge reduces driver power loss and enables >100 kHz switching with standard gate drivers.
t_r/t_f	20 ns / 11 ns - Fast switching transitions minimize overlap losses in hard-switched topologies.
C_oss	230 pF - Low output capacitance improves efficiency in resonant LLC and QR flyback converters.

Pinout & Package

STB11NM60-1 uses the standard TO-220 package (3-pin, through-hole), with tab connected to drain for direct heatsinking. Thermal resistance R_th(j-c) = 0.78 °C/W enables high-power dissipation with minimal thermal interface layers.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance source terminal; referenced to ground in low-side switch configurations.
2 (Gate)	Control input for channel conduction	High-impedance MOS gate requiring <30 nC charge; sensitive to ESD and ringing without proper RC damping.
3 (Drain)	Main high-voltage power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology.

Key Features

Feature	Design Value
MDmesh™ technology	Combines low R_DS(on) (0.4 Ω) with high 600 V rating-enabling smaller die size and higher power density than planar MOSFETs.
100% avalanche tested	Guarantees UIS reliability up to 5.5 A repetitive avalanche current and 350 mJ single-pulse energy-reducing need for external protection.
High dv/dt immunity	15 V/ns rated slope prevents false turn-on during fast voltage transients in high-noise converter environments.
Low C_iss/C_oss	1000 pF / 230 pF values reduce gate drive loss and improve zero-voltage switching margin in resonant designs.
Fast body diode	t_rr = 390 ns and Q_rr = 3.8 µC support quasi-resonant operation with reduced diode recovery loss and EMI.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–500 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost PFC stage.

Use Value: 0.4 Ω R_DS(on) and 30 nC Q_g enable >98% PFC efficiency at full load while maintaining thermal headroom on TO-220 heatsink.

Use Scenario: 3 kW industrial motor drive front-end with active PFC and wide input voltage range (300–480 V AC).

IC Role / Device Role / Timing Role: High-side switch in interleaved two-phase boost converter.

Use Value: 600 V rating and 150 °C T_jmax ensure robust operation under brownouts and line surges without derating.

Offline Flyback Adapter

UPS Inverter Half-Bridge

Use Scenario: 65 W universal-input (90–264 V AC) flyback adapter with QR control and high peak efficiency target.

IC Role / Device Role / Timing Role: Primary-side switching element in discontinuous conduction mode (DCM) flyback.

Use Value: 350 mJ E_AS and 15 V/ns dv/dt rating eliminate need for clamping circuits in cost-sensitive consumer adapters.

Use Scenario: 1 kVA online UPS with 200 kHz half-bridge inverter stage converting 360 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in synchronous half-bridge configuration driving transformer primary.

Use Value: Fast t_r/t_f (20/11 ns) and low C_oss (230 pF) minimize switching loss and improve dead-time control stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11NM60	Identical electrical specs; same TO-220 package but non-isolated (no creepage/clearance enhancement)	Lacks reinforced insulation; unsuitable for double-insulated consumer adapters requiring isolation barrier	Select STP11NM60 only when creepage distance and isolation voltage are not safety-critical.
IPP60R190C6	Higher R_DS(on) (0.19 Ω), lower V_DSS (600 V same), 650 V avalanche rating, Superjunction CoolMOS™	Better E_AS (620 mJ) and lower C_oss (120 pF); optimized for >200 kHz ZVS designs	Choose IPP60R190C6 for higher-frequency resonant topologies where lower C_oss and higher avalanche margin outweigh R_DS(on) increase.

Compared with STP11NM60, STB11NM60-1 offers identical switching and conduction performance but adds enhanced creepage/clearance for reinforced insulation compliance; versus IPP60R190C6, it trades slightly higher C_oss for proven ruggedness in hard-switched industrial PFC and lower gate charge sensitivity.

Availability

STB11NM60-1 is available at Aetrix Electronics and suitable for offline SMPS, industrial PFC stages, UPS inverters, and server power supplies requiring stable component supply, long-term lifecycle support, and certified traceable sourcing.

Supply support for STB11NM60-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing and broad industrial qualification.

STB11NM60-1 belongs to the MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial, computing, and telecom power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STB11NM60-1 supports 7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package and ensures safe operation within the 150 °C maximum junction temperature under sustained load conditions.

Does STB11NM60-1 have an integrated gate resistor?

No, STB11NM60-1 does not include an integrated gate resistor. It is a discrete silicon MOSFET requiring external gate drive circuitry-including a series gate resistor (typically 5–22 Ω)-to control switching speed, suppress oscillation, and limit peak gate current during turn-on/turn-off transitions.

Is the TO-220 tab electrically isolated in STB11NM60-1?

Yes-the STB11NM60-1 variant features reinforced insulation between the drain-connected metal tab and mounting surface, providing 2500 V DC isolation rating (V_ISO). This distinguishes it from STP11NM60 and enables use in double-insulated applications without additional insulating hardware.

Can STB11NM60-1 replace STP11NM60FP in TO-220FP footprint designs?

No-STB11NM60-1 uses the standard TO-220 package (3-pin, full-body), whereas STP11NM60FP uses TO-220FP (3-pin, shortened body, different lead spacing and thermal pad). Mechanical incompatibility prevents direct substitution without PCB redesign and thermal reassessment.

STB11NM60-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB11NM60-1 FAQ

1.How can I place an order for STB11NM60-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB11NM60-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB11NM60-1 reliable?

The price and inventory of STB11NM60-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB11NM60-1 is usually 5 days.

3.What payment methods are accepted for STB11NM60-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB11NM60-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB11NM60-1?

STB11NM60-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB11NM60-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB11NM60-1?

For technical support, including STB11NM60-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB11NM60-1 requirements.

6.How does Aetrix verify that STB11NM60-1 is sourced from the original manufacturer or authorized distributors?

All STB11NM60-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB11NM60-1 meets industry standards.

7.What is the process for return or replacement of STB11NM60-1?

All STB11NM60-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB11NM60-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB11NM60-1 part is unused and in its original packaging.

Return procedure for STB11NM60-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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