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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB11NM60FDT4

Name: STB11NM60FDT4
Brand: STMicroelectronics
SKU: STB11NM60FDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB11NM60FDT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB11NM60FDT4.pdf

Description:: MOSFET N-CH 600V 11A D2PAK

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Product details

Overview

STB11NM60FDT4 from STMicroelectronics is an N-channel 600 V, 11 A SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.58 Ω R_DS(on) max at V_GS = 10 V, 100% avalanche-rated capability, and enhanced dv/dt ruggedness for offline SMPS applications including AC-DC adapters and LED drivers.

For engineers reviewing the STB11NM60FDT4 datasheet, STB11NM60FDT4 pinout, STB11NM60FDT4 application, or STB11NM60FDT4 equivalent, key selection criteria include breakdown voltage rating, conduction loss at 11 A, single-pulse avalanche energy (E_AS = 470 mJ), thermal resistance (R_thJC = 1.25 °C/W), and TO-220FP's insulated mounting capability.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between on-resistance and switching speed while maintaining high voltage robustness. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V or 10 V gate drivers.

The device supports hard-switched topologies up to 600 V DC bus, with specified unclamped inductive switching (UIS) performance and guaranteed ESD protection per HBM Class 1C (≥2 kV). Its reduced gate charge (Q_g = 29 nC typ.) lowers driver power requirements in high-frequency flyback and PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 600 V drain-source blocking voltage, suitable for universal-input (85–265 V_AC) offline converters.
I_D (continuous)	11 A - Maximum continuous drain current at T_C = 25 °C, derates to ~7 A at T_C = 100 °C.
R_DS(on) max	0.58 Ω @ V_GS = 10 V - Defines conduction loss of ≤70 W at 11 A, critical for thermal design in enclosed adapters.
E_AS	470 mJ - Single-pulse avalanche energy rating ensures reliability during transient overvoltage events without external snubbers.
Q_g	29 nC typ. - Total gate charge determines required driver peak current and switching loss in 65–130 kHz SMPS designs.
R_thJC	1.25 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting with predictable temperature rise under load.

Pinout & Package

TO-220FP package with full internal insulation: plastic body isolates drain tab from heatsink, eliminating need for insulating washers in compact power supplies.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side switch output node	Internally connected to metal tab; electrically isolated by molded plastic for safe heatsink mounting.
Source	Power return path	Low-impedance connection to ground or negative rail; defines reference for gate drive and current sensing.
Gate	Control input	High-impedance MOS control terminal requiring <29 nC charge for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees UIS robustness up to 470 mJ, reducing need for overvoltage clamping in cost-sensitive flyback designs.
Enhanced dv/dt Immunity	Rated for 4.5 V/ns at V_DD = 400 V, minimizing false triggering in noisy high-voltage environments.
SuperMESH™ III Technology	Delivers 0.58 Ω R_DS(on) at 600 V, improving efficiency over prior-generation 600 V MOSFETs by ~15% at 11 A.
TO-220FP Insulated Package	Enables direct heatsink attachment without isolation hardware, saving PCB space and assembly cost in slim AC-DC adapters.

Applications

LED Driver Power Stage

Offline Flyback Adapter

Use Scenario: Constant-current LED driver for commercial lighting operating from 230 V_AC mains with 30–60 W output.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback topology, switching at 65 kHz.

Use Value: 0.58 Ω R_DS(on) limits conduction loss to <1.5 W at 11 A peak, enabling thermally constrained enclosure designs.

Use Scenario: Universal-input (85–265 V_AC) 24 W USB-C PD adapter with integrated primary controller.

IC Role / Device Role / Timing Role: Main power switch in primary-side regulation flyback, driven by dedicated PWM IC.

Use Value: 470 mJ E_AS rating eliminates need for external RCD clamp, reducing BOM count and board area.

Industrial AC-DC PSU

Smart Home Power Supply

Use Scenario: 48 V/1 A industrial control module requiring long-term reliability under 24/7 operation.

IC Role / Device Role / Timing Role: High-voltage switch in active-clamp forward converter, operating at 100 kHz.

Use Value: 1.25 °C/W R_thJC allows stable junction temperature <125 °C with minimal heatsink, supporting extended MTBF.

Use Scenario: Compact Wi-Fi smart plug with integrated metering and 5 V/2 A USB output.

IC Role / Device Role / Timing Role: Primary-side switch in low-profile flyback with integrated transformer.

Use Value: TO-220FP insulation permits direct chassis mounting, meeting creepage/clearance requirements without extra spacing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	600 V, 12 A, R_DS(on) = 0.65 Ω, Zener-protected gate, TO-220FP	Higher R_DS(on) increases conduction loss by ~12% at 11 A; gate Zener adds ESD margin but no performance gain in controlled environments	Prefer when gate robustness outweighs efficiency targets, e.g., high-humidity industrial settings
FDPF12N60NZ	600 V, 12 A, R_DS(on) = 0.62 Ω, TO-220FP, lower Q_g (23 nC)	Lower gate charge reduces driver losses but higher R_DS(on) raises conduction loss vs. STB11NM60FDT4	Choose for higher-frequency (>150 kHz) designs where switching loss dominates

Compared with STP12NK60ZFP and FDPF12N60NZ, STB11NM60FDT4 delivers the lowest R_DS(on) among these TO-220FP 600 V MOSFETs, making it optimal for thermally constrained, medium-frequency offline converters prioritizing conduction efficiency.

Availability

STB11NM60FDT4 is available at Aetrix Electronics and suitable for offline AC-DC adapters, LED lighting drivers, and industrial power supplies requiring stable component supply and long-lifecycle support.

Supply support for STB11NM60FDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STB11NM60FDT4 belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switch-mode power supplies operating up to 600 V.

FAQ

What is the maximum recommended gate-source voltage for STB11NM60FDT4?

The absolute maximum V_GS is ±25 V, but ST recommends limiting gate drive to 10 V–15 V for reliable operation. Exceeding 20 V risks gate oxide degradation over time, while voltages below 4.5 V may result in incomplete enhancement and increased R_DS(on). The device's V_GS(th) range (2.0–4.0 V) ensures compatibility with standard logic-level and 10 V gate drivers.

Does STB11NM60FDT4 require a gate resistor, and what value is typical?

Yes, a gate resistor is required to control switching speed and suppress ringing. A typical value is 10–47 Ω in series with the gate driver output. Lower values (≤10 Ω) increase dV/dt and EMI risk; higher values (≥100 Ω) slow switching and raise dynamic losses. The 29 nC total gate charge makes 22 Ω a common choice for 65–100 kHz flyback designs balancing loss and noise.

Can STB11NM60FDT4 be used in synchronous rectification topologies?

No - STB11NM60FDT4 is an N-channel high-side switch intended for primary-side switching in isolated topologies. It lacks the low R_DS(on) and fast body diode recovery needed for secondary-side synchronous rectification. For SR applications, ST recommends dedicated low-V_DS MOSFETs like STL10DN10LH or STP16NF06L.

Is the TO-220FP package of STB11NM60FDT4 electrically insulated, and what is its isolation voltage rating?

Yes - the TO-220FP package features full internal electrical insulation between the drain tab and the mounting surface. ST specifies a minimum isolation voltage of 2500 V_RMS for 1 minute per UL 60950-1, enabling direct heatsink mounting without insulating pads or shoulder washers in safety-critical AC-DC designs.

STB11NM60FDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB11NM60FDT4 FAQ

1.How can I place an order for STB11NM60FDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB11NM60FDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB11NM60FDT4 reliable?

The price and inventory of STB11NM60FDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB11NM60FDT4 is usually 5 days.

3.What payment methods are accepted for STB11NM60FDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB11NM60FDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB11NM60FDT4?

STB11NM60FDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB11NM60FDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB11NM60FDT4?

For technical support, including STB11NM60FDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB11NM60FDT4 requirements.

6.How does Aetrix verify that STB11NM60FDT4 is sourced from the original manufacturer or authorized distributors?

All STB11NM60FDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB11NM60FDT4 meets industry standards.

7.What is the process for return or replacement of STB11NM60FDT4?

All STB11NM60FDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB11NM60FDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB11NM60FDT4 part is unused and in its original packaging.

Return procedure for STB11NM60FDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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